Jayhoon Chung, Ph.D.
Affiliations: | 2006 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Materials Science EngineeringGoogle:
"Jayhoon Chung"Parents
Sign in to add mentorLlewellyn Rabenberg | grad student | 2006 | UT Austin | |
(Local electrostatic potential and strain characterization of semiconductor nanostructures.) |
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Publications
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Xie S, Chung J, Purcell B, et al. (2012) Electron Tomography of Stacked Contact/Via Structures Microscopy and Microanalysis. 18: 1798-1799 |
Diercks D, Lian G, Chung J, et al. (2011) Comparison of convergent beam electron diffraction and geometric phase analysis for strain measurement in a strained silicon device Journal of Microscopy. 241: 195-199 |
Choi YS, Lian G, Vartuli C, et al. (2010) Layout Variation Effects in Advanced MOSFETs: STI-Induced Embedded SiGe Strain Relaxation and Dual-Stress-Liner Boundary Proximity Effect Ieee Transactions On Electron Devices. 57: 2886-2891 |
Chung J, Lian G, Rabenberg L. (2010) Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy Ieee Electron Device Letters. 31: 854-856 |
Diercks D, Lian G, Chung J, et al. (2010) Direct Comparison of Convergent Beam Electron Diffraction and Geometric Phase Analysis for Local Strain Measurement Microscopy and Microanalysis. 16: 742-743 |
Chung J, Lian G, Rabenberg L. (2010) Local Lattice Strain Measurement using Geometric Phase Analysis of Annular Dark Field Images from Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 16: 1476-1477 |
Vartuli C, Lian G, Choi Y, et al. (2010) Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe Microscopy and Microanalysis. 16: 1924-1925 |
Chung J, Rabenberg L. (2008) Effects of strain gradients on strain measurements using geometrical phase analysis in the transmission electron microscope. Ultramicroscopy. 108: 1595-602 |
Chung J, Lian G, Rabenberg L. (2008) Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope Applied Physics Letters. 93: 081909 |
Lian G, Vartuli C, Chung J. (2008) Challenging analysis for the gate stack and strained channel of the advanced CMOS Microscopy and Microanalysis. 14: 384-385 |