Carlton M. Osburn
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringWebsite:
https://ece.ncsu.edu/people/osburn/Google:
"Carlton M. Osburn"Bio:
https://www.electrochem.org/osburn
https://www.proquest.com/openview/ea82ee606b979a5f23bcd903b0d10987/1
Parents
Sign in to add mentor| Robert Wilson Vest | grad student | 1970 | Purdue | |
| (The electrical properties of grain boundaries in nickel-oxide and magnesium-oxide) | ||||
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Publications
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| Kim I, Han SK, Osburn CM. (2004) Effect of Post Metallization Annealing for Alternative Gate Stack Devices Journal of the Electrochemical Society. 151 |
| Kim I, Han SK, Osburn CM. (2004) Stability of Advanced Gate Stack Devices Journal of the Electrochemical Society. 151 |
| Osburn CM, Kim I, Han SK, et al. (2002) Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? Ibm Journal of Research and Development. 46: 299-315 |
| Osburn CM, De I, Yee KF, et al. (2000) Design and integration considerations for end-of-the roadmap ultrashallow junctions Journal of Vacuum Science & Technology B. 18: 338-345 |
| Ahmed K, De I, Osburn C, et al. (2000) Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L/sub eff/ and R/sub sd/ of LDD MOSFETs Ieee Transactions On Electron Devices. 47: 891-893 |
| De I, Johri D, Srivastava A, et al. (2000) Impact of gate workfunction on device performance at the 50 nm technology node Solid-State Electronics. 44: 1077-1080 |
| De I, Osburn CM. (1999) Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices Ieee Transactions On Electron Devices. 46: 1711-1717 |
| Srivastava A, Heinisch HH, Vogel E, et al. (1998) Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 μm PMOSFETs Materials Research Society Symposium - Proceedings. 525: 163-170 |
| Yee KF, Osburn CM, Masnari NA, et al. (1998) Evaluation and comparison of 3.0 nm gate-stack dielectrics for tenth-micron technology NMOSFETs Materials Research Society Symposium - Proceedings. 525: 157-162 |
| Sun J, Bartholomew RF, Bellur K, et al. (1998) Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors Journal of the Electrochemical Society. 145: 2131-2137 |