Maria A. Albano, Ph.D.
Affiliations: | 2001 | New Jersey Institute of Technology, Newark, NJ, United States |
Area:
Materials Science EngineeringGoogle:
"Maria Albano"Parents
Sign in to add mentor| Marek Sosnowski | grad student | 2001 | NJIT | |
| (Low energy implantation of boron with decaborane ions.) | ||||
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Publications
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| Li C, Albano MA, Gladczuk L, et al. (2002) Characteristics of Ultra Shallow B Implantation with Decaborane Mrs Proceedings. 745 |
| Sosnowski M, Albano MA, Li C, et al. (2002) Transient Enhanced Diffusion of B in Si Implanted with Decaborane Cluster Ions Journal of the Electrochemical Society. 149 |
| Sosnowski M, Albano MA, Li C, et al. (2002) Sputtering of Si with decaborane cluster ions Applied Physics Letters. 80: 592-594 |
| Albano MA, Babaram V, Poate JM, et al. (2000) Low energy implantation of boron with decaborane ions Mrs Proceedings. 610 |
| Sosnowski M, Albano MA, Babaram V, et al. (2000) Ionization and Mass Spectrometry of Decaborane for Shallow Implantation of Boron into Silicon Journal of the Electrochemical Society. 147: 4329-4332 |