Dashen Shen
Affiliations: | The University of Alabama in Huntsville, Huntsville, AL, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Dashen Shen"
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Publications
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| Li J, Cheng X, Wang Q, et al. (2017) Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask Materials Science in Semiconductor Processing. 67: 104-109 |
| Cao D, Cheng X, Zheng L, et al. (2015) Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition Journal of Vacuum Science and Technology. 33 |
| Cao D, Cheng X, Zheng L, et al. (2015) Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33 |
| Cao D, Cheng X, Xie Y, et al. (2015) Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures Rsc Advances. 5: 37881-37886 |
| Zheng L, Cheng X, Cao D, et al. (2015) Direct growth of Sb2Te3 on graphene by atomic layer deposition Rsc Advances. 5: 40007-40011 |
| Zheng L, Cheng X, Wang Z, et al. (2015) Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism Journal of Physical Chemistry C. 119: 5995-6000 |
| Wang Q, Cheng X, Wang Z, et al. (2015) A novel partial SOI EDMOS (>800V) with a buried N-type layer on the double step buried oxide Superlattices and Microstructures. 79: 1-8 |
| Zheng L, Cheng X, Cao D, et al. (2014) Improvement of Al2O3 films on graphene grown by atomic layer deposition with pre-H2O treatment. Acs Applied Materials & Interfaces. 6: 7014-9 |
| Wan W, Cheng X, Cao D, et al. (2014) Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition Journal of Vacuum Science and Technology. 32 |
| Xia C, Cheng X, Wang Z, et al. (2014) Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate Ieee Transactions On Electron Devices. 61: 3477-3482 |