Andreas R. Stonas, Ph.D.
Affiliations: | 2003 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Mechanical EngineeringGoogle:
"Andreas Stonas"Parents
Sign in to add mentor| Evelyn L. Hu | grad student | 2003 | UC Santa Barbara | |
| (Gallium nitride-based micro-opto-electro-mechanical systems.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Haberer ED, Meier C, Sharma R, et al. (2005) Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching Physica Status Solidi C: Conferences. 2: 2845-2848 |
| Hansen PJ, Shen L, Wu Y, et al. (2004) AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2479-2485 |
| Haberer ED, Sharma R, Meier C, et al. (2004) Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching Applied Physics Letters. 85: 5179-5181 |
| Haberer ED, Sharma R, Stonas AR, et al. (2004) Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching Applied Physics Letters. 85: 762-764 |
| Estrada S, Champlain J, Wang C, et al. (2003) Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback Mrs Proceedings. 798 |
| Estrada S, Huntington A, Stonas A, et al. (2003) n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562 |
| Estrada S, Xing H, Stonas A, et al. (2003) Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822 |
| Gao Y, Stonas AR, Ben-Yaacov I, et al. (2003) AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149 |
| Estrada S, Stonas A, Huntington A, et al. (2002) The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor Mrs Proceedings. 743 |
| Stonas AR, MacDonald NC, Turner KL, et al. (2001) Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2838-2841 |