Dimitri A Antoniadis
Affiliations: | Electrical Engineering and Computer Science | Massachusetts Institute of Technology, Cambridge, MA, United States |
Website:
http://www.mit.edu/~ujwal/geneology.pdfGoogle:
"Dimitri Alexander Antoniadis" OR "Dimitri A Antoniadis"Bio:
https://www.amacad.org/person/dimitri-antoniadis
https://books.google.com/books?id=7lYFAAAAIAAJ
Parents
Sign in to add mentor| Aldo Vieira Da Rosa | grad student | 1976 | Stanford (E-Tree) | |
| (Determination of thermospheric quantities from ionospheric radio observations using numerical simulation) | ||||
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Publications
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| Rau M, Lin J, Antoniadis DA, et al. (2019) Investigation of Source Starvation in High-Transconductance III–V Quantum-Well MOSFETs Ieee Transactions On Electron Devices. 66: 4698-4705 |
| Radhakrishna U, Choi P, Antoniadis DA. (2019) Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model Ieee Transactions On Electron Devices. 66: 95-105 |
| Choi P, Antoniadis DA, Fitzgerald EA. (2019) Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices Past & Present |
| Kanhaiya PS, Hills G, Antoniadis DA, et al. (2018) DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors Ieee Electron Device Letters. 39: 1250-1253 |
| Sajjad RN, Radhakrishna U, Antoniadis DA. (2018) A tunnel FET compact model including non-idealities with verilog implementation Solid-State Electronics. 150: 16-22 |
| Kumar A, Lee SY, Yadav S, et al. (2017) Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express. 25: 31853-31862 |
| Kumar A, Lee SY, Yadav S, et al. (2017) Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Optics Express. 25: 5146-5155 |
| Schulte-Braucks C, Pandey R, Sajjad RN, et al. (2017) Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors Ieee Transactions On Electron Devices. 64: 4354-4362 |
| Khan AI, Radhakrishna U, Salahuddin S, et al. (2017) Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs Ieee Electron Device Letters. 38: 1335-1338 |
| Chowdhury N, Iannaccone G, Fiori G, et al. (2017) GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics Ieee Electron Device Letters. 38: 859-862 |