Deji Akinwande, Ph.D.
Affiliations: | 2009 | Stanford University, Palo Alto, CA | |
2010- | Electrical and Computer Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Website:
https://sites.utexas.edu/nano/Google:
"Deji Akinwande"Bio:
Children
Sign in to add traineeRicardo Ramirez | grad student | 2023- | UT Austin |
Maruthi Yogeesh | grad student | 2017 | UT Austin |
Joon-Seok (Jason) Kim | grad student | 2018 | UT Austin |
Myungsoo Kim | grad student | 2016-2020 | UT Austin |
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Publications
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Ghomi S, Martella C, Lee Y, et al. (2024) Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2406703 |
Han S, Liu J, Pérez-Jiménez AI, et al. (2024) Visualizing and Controlling of Photogenerated Electron-Hole Pair Separation in Monolayer WS Nanobubbles under Piezoelectric Field. Acs Applied Materials & Interfaces |
Yang SJ, Liang L, Lee Y, et al. (2024) Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer. Acs Nano |
Li X, Zhou P, Hu X, et al. (2023) Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe Thin Film Transistors. Acs Nano |
Fatima S, Gu Y, Yang SJ, et al. (2023) Comparative Study between Sulfurized MoS from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications. Acs Applied Materials & Interfaces |
Yang SJ, Dahan MM, Levit O, et al. (2023) Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications. Nano Letters |
Kim JS, Maity N, Kim M, et al. (2022) Strain-Modulated Interlayer Charge and Energy Transfers in MoS/WS Heterobilayer. Acs Applied Materials & Interfaces. 14: 46841-46849 |
Alam MH, Chowdhury S, Roy A, et al. (2022) Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide. Acs Nano |
Hus SM, Ge R, Chen PA, et al. (2020) Observation of single-defect memristor in an MoS atomic sheet. Nature Nanotechnology |
Wu X, Ge R, Akinwande D, et al. (2020) Understanding of Multiple Resistance States by Current Sweeping in MoS2-based Non-volatile Memory Devices. Nanotechnology |