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Kyu S. Min, Ph.D. - Publications

Affiliations: 
2000 California Institute of Technology, Pasadena, CA 
Area:
photovoltaics
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Yeh CC, Ma TP, Ramaswamy N, Rocklein N, Gealy D, Graettinger T, Min K. Frenkel-Poole trap energy extraction of atomic layer deposited Al 2O3 and HfxAlyO thin films Applied Physics Letters. 91. DOI: 10.1063/1.2786021  0.323
2003 Möck P, Lei Y, Topuria T, Browning ND, Ragan R, Min KS, Atwater HA. Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix Mrs Proceedings. 770. DOI: 10.1557/Proc-770-I1.7  0.603
2003 Lei Y, Möck P, Topuria T, Browning ND, Ragan R, Min KS, Atwater HA. Void-mediated formation of Sn quantum dots in a Si matrix Applied Physics Letters. 82: 4262-4264. DOI: 10.1063/1.1584073  0.583
2002 Kanemitsu Y, Masuda K, Tanaka H, Ando M, Kushida T, Min KS, Atwater HA. Enhanced Exciton–Phonon Coupling in Spherical GaAs Nanocrystals Studied by Selective Excitation Spectroscopy Physica Status Solidi (a). 190: 529-532. DOI: 10.1002/1521-396X(200204)190:2<529::Aid-Pssa529>3.0.Co;2-8  0.541
2001 Ragan R, Min KS, Atwater HA. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1 - x/Ge and SnxSi1 - x/Si alloy systems Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 204-213. DOI: 10.1016/S0921-5107(01)00732-2  0.589
2000 Kanemitsu Y, Tanaka H, Fukunishi Y, Kushida T, Min KS, Atwater HA. Visible light emission from GaAs nanocrystals inSiO2films fabricated by sequential ion implantation Physical Review B. 62: 5100-5108. DOI: 10.1103/Physrevb.62.5100  0.619
2000 Brongersma ML, Kik PG, Polman A, Min KS, Atwater HA. Size-dependent electron-hole exchange interaction in Si nanocrystals Applied Physics Letters. 76: 351-353. DOI: 10.1063/1.125751  0.685
2000 Kanemitsu Y, Tanaka H, Kushida T, Min KS, Atwater HA. Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation Journal of Luminescence. 87: 432-434. DOI: 10.1016/S0022-2313(99)00452-4  0.604
1999 Atwater HA, Ragan R, Min KS. Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems Mrs Proceedings. 583. DOI: 10.1557/Proc-583-349  0.624
1999 Kanemitsu Y, Tanaka H, Kushida T, Min KS, Atwater HA. A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation Journal of Applied Physics. 86: 1762-1764. DOI: 10.1063/1.370960  0.652
1999 Brongersma ML, Polman A, Min KS, Atwater HA. Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si Journal of Applied Physics. 86: 759-763. DOI: 10.1063/1.370800  0.725
1998 Kanemitsu Y, Tanaka H, Mimura S, Okamoto S, Kushida T, Min KS, Atwater HA. Efficient Luminescence from GaAs Nanocrystals in SiO2 Matrices Mrs Proceedings. 536. DOI: 10.1557/Proc-536-223  0.595
1998 Min KS, Atwater HA. Growth and Characterization of Epitaxially Stabilized Pseudomorphic α-Sn/Si Heterostructures Mrs Proceedings. 533: 355. DOI: 10.1557/Proc-533-355  0.544
1998 Okamoto S, Kanemitsu Y, Min KS, Atwater HA. Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices Applied Physics Letters. 73: 1829-1831. DOI: 10.1063/1.122296  0.629
1998 Brongersma ML, Polman A, Min KS, Boer E, Tambo T, Atwater HA. Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation Applied Physics Letters. 72: 2577-2579. DOI: 10.1063/1.121423  0.723
1998 Min KS, Atwater HA. Ultrathin pseudomorphic Sn/Si and SnxSi1−x/Si heterostructures Applied Physics Letters. 72: 1884-1886. DOI: 10.1063/1.121215  0.649
1997 Brongersma ML, MIN KS, Boer E, Tambo T, Polman A, Atwater HA. Tailoring the Optical Properties of Si Nanocrystals In SiO2: Materials Issues And Nanocrystal Laser Perspectives Mrs Proceedings. 486. DOI: 10.1557/Proc-486-213  0.731
1996 Min KS, Shcheglov KV, Yang CM, Atwater HA, Brongersma ML, Polman A. Defect‐related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2 Applied Physics Letters. 69: 2033-2035. DOI: 10.1063/1.116870  0.721
1996 Min KS, Shcheglov KV, Yang CM, Atwater HA, Brongersma ML, Polman A. The role of quantum‐confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals Applied Physics Letters. 68: 2511-2513. DOI: 10.1063/1.115838  0.724
1995 Min KS, Shcheglov KV, Yang CM, Camata RP, Atwater HA, Brongersma ML, Polman A. On the Origin of Visible Luminescence from SIO2 Films Containing Ge Nanocrystals Mrs Proceedings. 405. DOI: 10.1557/Proc-405-247  0.722
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