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Agis Iliadis - Publications

Affiliations: 
Electrical and Computer Engineering University of Maryland, College Park, College Park, MD 
Website:
https://ece.umd.edu/clark/faculty/412/Agis-Iliadis
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44 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Khan MR, Smith JR, Tompkins RP, Kelley S, Litz M, Russo J, Leathersich J, Shahedipour-Sandvik F(, Jones KA, Iliadis A. Design and characterization of GaN p-i-n diodes for betavoltaic devices Solid-State Electronics. 136: 24-29. DOI: 10.1016/J.Sse.2017.06.010  0.342
2015 Sardari SE, Berkovich A, Iliadis AA. Fabrication of Si/ZnO vertical n–n+ and p–p+ isotype junction devices by pulsed laser deposition Thin Solid Films. 595: 181-185. DOI: 10.1016/J.Tsf.2015.10.074  0.44
2014 Vasilopoulou M, Konofaos N, Davazoglou D, Argitis P, Stathopoulos NA, Savaidis SP, Iliadis AA. Organic photovoltaic performance improvement using atomic layer deposited ZnO electron-collecting layers Solid-State Electronics. 101: 50-56. DOI: 10.1016/j.sse.2014.06.034  0.334
2013 Kostis I, Vourdas N, Vasilopoulou M, Douvas A, Papadimitropoulos G, Konofaos N, Iliadis A, Davazoglou D. Formation of stoichiometric, sub-stoichiometric undoped and hydrogen doped tungsten oxide films, enabled by pulsed introduction of O2 or H 2 during hot-wire vapor deposition Thin Solid Films. 537: 124-130. DOI: 10.1016/j.tsf.2013.04.021  0.312
2013 Stamataki M, Tsamakis D, Xanthakis JP, Ali HA, Esmaili-Sardari S, Iliadis AA. Electrical characterization of Cr Schottky contacts on undoped and Ni-doped p-ZnO films grown by pulsed laser deposition on Si (1 0 0) substrates Microelectronic Engineering. 104: 95-99. DOI: 10.1016/J.Mee.2012.11.021  0.669
2012 Esmaili-Sardari S, Berkovich A, Iliadis AA. Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates Applied Physics Letters. 100. DOI: 10.1063/1.3682080  0.416
2011 Sardari SE, Berkovich A, Iliadis AA. Study of conductivity type of undoped ZnO films grown on n and p-type (100) Si substrates by pulsed laser deposition 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135233  0.392
2010 Sardari SE, Iliadis AA, Stamataki M, Tsamakis D, Konofaos N. Crystal quality and conductivity type of (0 0 2) ZnO films on (1 0 0) Si substrates for device applications Solid-State Electronics. 54: 1150-1154. DOI: 10.1016/j.sse.2010.05.025  0.412
2009 Sardari SE, Iliadis AA, Stamataki M, Tsamakis D, Konofaos N. Crystal quality and conductivity type of epitaxial (002) ZnO films on (100) Si substrates for device applications 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378112  0.368
2009 Stamataki M, Tsamakis D, Ali HA, Esmaili-Sardari S, Iliadis AA. Electrical characterization of Cr / p-ZnO Schottky contacts grown by pulsed laser deposition (PLD) on Si substrate 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378075  0.355
2008 Krishnamoorthy S, Iliadis AA, Bei T, Chrousos GP. An interleukin-6 ZnO/SiO(2)/Si surface acoustic wave biosensor. Biosensors & Bioelectronics. 24: 313-8. PMID 18502114 DOI: 10.1016/J.Bios.2008.04.011  0.479
2008 Brilis ., Tsamakis D, Ali H, Krishnamoorthy S, Iliadis AA. Electrical conduction effects at low temperatures in undoped ZnO thin films grown by Pulsed Laser Deposition on Si substrates Thin Solid Films. 516: 4226-4231. DOI: 10.1016/J.Tsf.2007.12.137  0.671
2008 Krishnamoorthy S, Iliadis AA. Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(1 0 0) Si substrates Solid-State Electronics. 52: 1710-1716. DOI: 10.1016/J.Sse.2008.06.039  0.587
2007 Pandis C, Brilis N, Bourithis E, Tsamakis D, Ali H, Krishnamoorthy S, Iliadis AA, Kompitsas M. Low–Temperature Hydrogen Sensors Based on Au Nanoclusters and Schottky Contacts on ZnO Films Deposited by Pulsed Laser Deposition on Si and ${\hbox{SiO}}_{2}$ Substrates Ieee Sensors Journal. 7: 448-454. DOI: 10.1109/Jsen.2007.891944  0.686
2006 Krishnamoorthy S, Bei T, Zoumakis E, Chrousos GP, Iliadis AA. Morphological and binding properties of interleukin-6 on thin ZnO films grown on (100) silicon substrates for biosensor applications. Biosensors & Bioelectronics. 22: 707-14. PMID 16581242 DOI: 10.1016/J.Bios.2006.02.020  0.546
2006 Krishnamoorthy S, Iliadis AA. Development of high frequency ZnO/SiO2/Si Love mode surface acoustic wave devices Solid-State Electronics. 50: 1113-1118. DOI: 10.1016/j.sse.2006.04.033  0.591
2006 Pandis C, Brilis N, Tsamakis D, Ali HA, Krishnamoorthy S, Iliadis AA. Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates Solid-State Electronics. 50: 1119-1123. DOI: 10.1016/j.sse.2006.04.025  0.598
2006 Krishnamoorthy S, Iliadis AA. Development of ZnO/SiO 2/Si love mode surface acoustic wave devices with high sensitivity for biosensor applications Proceedings of the 2006 Ieee Sensors Applications Symposium. 14-17.  0.536
2005 Krishnamoorthy S, Iliadis AA. Development of high frequency love mode surface acoustic wave ZnO/SiO 2/Si devices 2005 International Semiconductor Device Research Symposium. 2005: 189-190.  0.526
2003 Chryssis AN, Krishnamoorthy S, Iliadis AA, Lee U. Study of ZnO thin films grown by PLD on (100) Si for surface acoustic wave devices 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 114-115. DOI: 10.1109/ISDRS.2003.1272021  0.629
2002 Iliadis AA, Krishnamoorthy S, Yang W, Choopun S, Vispute RD, Venkatesan T. Structural, optical and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applications Proceedings of Spie - the International Society For Optical Engineering. 4650: 67-74. DOI: 10.1117/12.467677  0.558
2002 Inumpudi A, Iliadis AA, Krishnamoorthy S, Choopun S, Vispute RD, Venkatesan T. Pt-Ga Ohmic contacts to n-ZnO using focused ion beams Solid-State Electronics. 46: 1665-1668. DOI: 10.1016/S0038-1101(02)00176-4  0.544
2002 Krishnamoorthy S, Iliadis AA, Inumpudi A, Choopun S, Vispute RD, Venkatesan T. Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices Solid-State Electronics. 46: 1633-1637. DOI: 10.1016/S0038-1101(02)00117-X  0.574
2001 Inumpudi A, Iliadis AA, Choopun S, Vispute RD, Venkatesan T. Room temperature ZnO/Zn0.8Mg0.2O resonant tunneling devices for microwave applications Materials Research Society Symposium Proceedings. 656: 13-18. DOI: 10.1557/Proc-656-Dd1.4  0.385
2001 Krishnamoorthy S, Iliadis AA, Inumqudi A, Choopun S, Vispute RD, Venkatesan T. Resonant tunneling action in ZnO/Zn0.8Mg0.2O double barrier devices 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 450-453. DOI: 10.1109/ISDRS.2001.984542  0.569
1999 Choopun S, Vispute RD, Noch W, Balsamo A, Sharma RP, Venkatesan T, Iliadis A, Look DC. Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire Applied Physics Letters. 75: 3947-3949. DOI: 10.1063/1.125503  0.452
1999 Vispute RD, Choopun S, Enck R, Patel A, Talyansky V, Sharma RP, Venkatesan T, Sarney WL, Salamancariba L, Andronescu SN, Iliadis AA, Jones KA. Pulsed laser deposition and processing of wide band gap semiconductors and related materials Journal of Electronic Materials. 28: 275-286. DOI: 10.1007/S11664-999-0027-9  0.407
1999 Vispute RD, Choopun S, Enck R, Patel A, Talyansky V, Sharma RP, Venkatesan T, Sarney WL, Salamancariba L, Andronescu SN, Iliadis AA, Jones KA. Pulsed laser deposition and processing of wide band gap semiconductors and related materials Journal of Electronic Materials. 28: 275-286.  0.413
1998 Vispute RD, Talyansky V, Choopun S, Sharma RP, Venkatesan T, He M, Tang X, Halpern JB, Spencer MG, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices Applied Physics Letters. 73: 348-350. DOI: 10.1063/1.121830  0.396
1998 Vispute RD, Talyansky V, Sharma RP, Choopun S, Downes M, Venkatesan T, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA, McGarrity J. Advances in pulsed laser deposition of nitrides and their integration with oxides Applied Surface Science. 127: 431-439. DOI: 10.1016/S0169-4332(97)00668-5  0.389
1998 Talyansky V, Vispute R, Ramesh R, Sharma R, Venkatesan T, Li Y, Salamanca-Riba L, Wood M, Lareau R, Jones K, Iliadis A. Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire Thin Solid Films. 323: 37-41. DOI: 10.1016/S0040-6090(97)00902-4  0.381
1998 Talyansky V, Vispute RD, Ramesh R, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Wood MC, Lareau RT, Jones KA, Iliadis AA. Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire Thin Solid Films. 323: 37-41.  0.379
1997 Talyansky V, Vispute RD, Andronescu SN, Iliadis AA, Jones KA, Choopun S, Downes MJ, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Wood MC, Lareau RA. PLD epitaxial TiN contacts to 6H-SiC and GaN Materials Research Society Symposium - Proceedings. 483: 235-239. DOI: 10.1557/Proc-483-235  0.349
1997 Vispute RD, Talyansky V, Chupoon S, Enck R, Dahmas T, Ogale SB, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Iliadis AA, He M, Tang X, Halpern JB, Spencer MG, et al. Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire Mrs Proceedings. 482. DOI: 10.1557/Proc-482-343  0.381
1997 Talyansky V, Vispute RD, Sharma RP, Choopun S, Downes MJ, Venkatesan T, Iliadis AA, Wood MC, Lareau RT, Jones KA. Study of electrical transport across interfaces between wide gap semiconductor and metal oxides Materials Research Society Symposium - Proceedings. 477: 119-124. DOI: 10.1557/Proc-474-119  0.362
1997 Vispute RD, Talyansky V, Sharma RP, Choopun S, Downes M, Venkatesan T, Jones KA, Iliadis AA, Asif Khan M, Yang JW. Growth of epitaxial GaN films by pulsed laser deposition Applied Physics Letters. 71: 102-104. DOI: 10.1063/1.119441  0.41
1997 Vispute RD, Talyansky V, Trajanovic Z, Choopun S, Downes M, Sharma RP, Venkatesan T, Woods MC, Lareau RT, Jones KA, Iliadis AA. High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides Applied Physics Letters. 70: 2735-2737. DOI: 10.1063/1.119006  0.431
1997 Vispute RD, Talyansky V, Chupoon S, Enck R, Dahmas T, Ogale SB, Sharma RP, Venkatesan T, Li YX, Salamanca-Riba LG, Iliadis AA, He M, Tang X, Halpern JB, Spencer MG. Pulsed laser deposition of highly crystalline GaN films on sapphire Materials Research Society Symposium - Proceedings. 482: 343-348.  0.41
1996 Davazoglou D, Iliadis AA. Silicon (oxy)nitride thin films deposited by LPCVD from SiCl2H2-NH3-N2O mixtures of variable composition Materials Research Society Symposium - Proceedings. 417: 187-192.  0.307
1987 Iliadis A. Barrier height reduction in Au–Ge Schottky contacts to n‐type GaAs Journal of Vacuum Science & Technology B. 5: 1340-1345. DOI: 10.1116/1.583612  0.371
1986 Iliadis A, Prior KA, Stanley CR, Martin T, Davies GJ. Influence of growth conditions on undoped and sulfur‐doped InP grown by molecular‐beam epitaxy Journal of Applied Physics. 60: 213-218. DOI: 10.1063/1.337684  0.401
1985 Martin T, Stanley CR, Iliadis A, Whitehouse CR, Sykes DE. Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy Applied Physics Letters. 46: 994-996. DOI: 10.1063/1.95792  0.311
1984 Iliadis A, Singer K. Metallurgical behaviour of Ni/AuGe ohmic contacts to GaAs Solid State Communications. 49: 99-101. DOI: 10.1016/0038-1098(84)90571-4  0.289
1983 Iliadis A, Singer K. The role of germanium in evaporated AuGe ohmic contacts to GaAs Solid-State Electronics. 26: 7-14. DOI: 10.1016/0038-1101(83)90154-5  0.336
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