Year |
Citation |
Score |
2015 |
Shao S, Lien WC, Maralani A, Cheng JC, Dorsey KL, Pisano AP. 4H-silicon carbide p-n diode for high temperature (600 °C) environment applications Materials Science Forum. 821: 636-639. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.636 |
0.629 |
|
2014 |
Maralani A, Lien WC, Zhang N, Pisano AP. Silicon carbide transistors for IC design applications up to 600 °C Materials Science Forum. 778: 1126-1129. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.1126 |
0.508 |
|
2014 |
Shao S, Lien WC, Maralani A, Pisano AP. Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment European Solid-State Device Research Conference. 138-141. DOI: 10.1109/ESSDERC.2014.6948777 |
0.52 |
|
2013 |
Tsai DS, Lien WC, Lien DH, Chen KM, Tsai ML, Senesky DG, Yu YC, Pisano AP, He JH. Solar-blind photodetectors for harsh electronics. Scientific Reports. 3: 2628. PMID 24022208 DOI: 10.1038/Srep02628 |
0.652 |
|
2013 |
Tsai DS, Lien WC, Lien DH, Chen KM, Tsai ML, Senesky DG, Yu YC, Pisano AP, He JH. High-endurance solar-blind photodetectors using AlN on Si substrates for extreme harsh environment applications Device Research Conference - Conference Digest, Drc. 65-66. DOI: 10.1109/DRC.2013.6633795 |
0.554 |
|
2013 |
Lin CM, Chen YY, Felmetsger VV, Lien WC, Riekkinen T, Senesky DG, Pisano AP. Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures Journal of Micromechanics and Microengineering. 23. DOI: 10.1088/0960-1317/23/2/025019 |
0.655 |
|
2012 |
Lin CA, Lai KY, Lien WC, He JH. An efficient broadband and omnidirectional light-harvesting scheme employing a hierarchical structure based on a ZnO nanorod/Si3N4-coated Si microgroove on 5-inch single crystalline Si solar cells. Nanoscale. 4: 6520-6. PMID 22965451 DOI: 10.1039/C2Nr32358C |
0.395 |
|
2012 |
Lien WC, Tsai DS, Lien DH, Senesky DG, He JH, Pisano AP. 4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c Ieee Electron Device Letters. 33: 1586-1588. DOI: 10.1109/Led.2012.2214759 |
0.649 |
|
2012 |
Lien WC, Pisano AP, Tsai DS, He JH, Senesky DG. Extreme temperature 4H-SiC metal-semiconductor-metal ultraviolet photodetectors European Solid-State Device Research Conference. 234-237. DOI: 10.1109/ESSDERC.2012.6343376 |
0.516 |
|
2011 |
Tsai DS, Lin CA, Lien WC, Chang HC, Wang YL, He JH. Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal Schottky photodetectors improved by ZnO nanorod arrays. Acs Nano. 5: 7748-53. PMID 21942706 DOI: 10.1021/Nn203357E |
0.499 |
|
2011 |
Lo JW, Lien WC, Lin CA, He JH. Er-doped ZnO nanorod arrays with enhanced 1540 nm emission by employing Ag island films and high-temperature annealing. Acs Applied Materials & Interfaces. 3: 1009-14. PMID 21456526 DOI: 10.1021/Am101031F |
0.328 |
|
2011 |
Lien WC, Tsai DS, Chiu SH, Senesky DG, Maboudian R, Pisano AP, He JH. Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, Transducers'11. 1875-1878. DOI: 10.1109/TRANSDUCERS.2011.5969795 |
0.528 |
|
2011 |
Lien WC, Tsai DS, Chiu SH, Senesky DG, Maboudian R, Pisano AP, He JH. Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection Ieee Electron Device Letters. 32: 1564-1566. DOI: 10.1109/Led.2011.2164570 |
0.661 |
|
2010 |
Lien WC, Cheng KB, Senesky DG, Carraro C, Pisano AP, Maboudian R. Growth of 3C-SiC thin film on AlN/Si(100) with atomically abrupt interface via tailored precursor feeding procedure Electrochemical and Solid-State Letters. 13: D53-D56. DOI: 10.1149/1.3418619 |
0.635 |
|
2010 |
Lin CM, Chen YY, Felmetsger VV, Yen TT, Lien WC, Senesky DG, Pisano AP. Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure Proceedings - Ieee Ultrasonics Symposium. 1696-1699. DOI: 10.1109/ULTSYM.2010.5935478 |
0.661 |
|
2010 |
Lin CM, Lien WC, Felmetsger VV, Hopcroft MA, Senesky DG, Pisano AP. AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices Applied Physics Letters. 97. DOI: 10.1063/1.3495782 |
0.672 |
|
2010 |
Lien WC, Ferralis N, Carraro C, Maboudian R. Growth of epitaxial 3C-SiC films on Si(100) via low temperature SiC buffer layer Crystal Growth and Design. 10: 36-39. DOI: 10.1021/Cg901189K |
0.497 |
|
2009 |
Lien WC, Ferralis N, Pisano AP, Carraro C, Maboudian R. Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3224895 |
0.624 |
|
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