Year |
Citation |
Score |
2020 |
Hagmann JA, Wang X, Kashid R, Namboodiri P, Wyrick J, Schmucker SW, Stewart MD, Silver RM, Richter CA. Electron-electron interactions in low-dimensional Si:P delta layers Physical Review B. 101. DOI: 10.1103/Physrevb.101.245419 |
0.331 |
|
2020 |
Anderson EM, Campbell DM, Maurer LN, Baczewski AD, Marshall MT, Lu T, Lu P, Tracy LA, Schmucker SW, Ward DR, Misra S. Low thermal budget high-k/metal surface gate for buried donor-based devices Journal of Physics: Materials. 3: 035002. DOI: 10.1088/2515-7639/Ab953B |
0.394 |
|
2020 |
Wang X, Wyrick J, Kashid RV, Namboodiri P, Schmucker SW, Murphy A, Stewart MD, Silver RM. Atomic-scale control of tunneling in donor-based devices Communications Physics. 3. DOI: 10.1038/S42005-020-0343-1 |
0.379 |
|
2019 |
Schmucker SW, Namboodiri PN, Kashid R, Wang X, Hu B, Wyrick JE, Myers AF, Schumacher JD, Silver RM, Stewart MD. Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide. Physical Review Applied. 11. PMID 31579257 DOI: 10.1103/Physrevapplied.11.034071 |
0.367 |
|
2018 |
Wyrick J, Wang X, Namboodiri P, Schmucker SW, Kashid R, Silver R. Atom-by-atom construction of a cyclic artificial molecule in Silicon. Nano Letters. PMID 30428677 DOI: 10.1021/Acs.Nanolett.8B02919 |
0.371 |
|
2017 |
McMorrow JJ, Cress CD, Arnold HN, Sangwan VK, Jariwala D, Schmucker SW, Marks TJ, Hersam MC. Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors Applied Physics Letters. 110: 073102. DOI: 10.1063/1.4976023 |
0.496 |
|
2016 |
Cress CD, Schmucker SW, Friedman AL, Dev P, Culbertson JC, Lyding JW, Robinson JT. Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. Acs Nano. PMID 26910346 DOI: 10.1021/Acsnano.6B00252 |
0.615 |
|
2016 |
Arnold HN, Cress CD, McMorrow JJ, Schmucker SW, Sangwan VK, Jaber-Ansari L, Kumar R, Puntambekar KP, Luck KA, Marks TJ, Hersam MC. Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. Acs Applied Materials & Interfaces. PMID 26882215 DOI: 10.1021/Acsami.5B12259 |
0.523 |
|
2016 |
Friedman AL, Cress CD, Schmucker SW, Robinson JT, Van'T Erve OMJ. Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.161409 |
0.398 |
|
2016 |
Arnold HN, Sangwan VK, Schmucker SW, Cress CD, Luck KA, Friedman AL, Robinson JT, Marks TJ, Hersam MC. Reducing flicker noise in chemical vapor deposition graphene field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4942468 |
0.548 |
|
2016 |
Koepke JC, Wood JD, Chen Y, Schmucker SW, Liu X, Chang NN, Nienhaus L, Do JW, Carrion EA, Hewaparakrama J, Rangarajan A, Datye I, Mehta R, Haasch RT, Gruebele M, et al. Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane Chemistry of Materials. 28: 4169-4179. DOI: 10.1021/Acs.Chemmater.6B00396 |
0.674 |
|
2015 |
Schmucker SW, Cress CD, Culbertson JC, Beeman JW, Dubon OD, Robinson JT. Raman signature of defected twisted bilayer graphene Carbon. 93: 250-257. DOI: 10.1016/J.Carbon.2015.05.076 |
0.369 |
|
2015 |
Lock EH, Delongchamp DM, Schmucker SW, Simpkins B, Laskoski M, Mulvaney SP, Hines DR, Baraket M, Hernandez SC, Robinson JT, Sheehan PE, Jaye C, Fisher DA, Walton SG. Dry graphene transfer print to polystyrene and ultra-high molecular weight polyethylene - Detailed chemical, structural, morphological and electrical characterization Carbon. 86: 288-300. DOI: 10.1016/J.Carbon.2015.01.048 |
0.514 |
|
2014 |
Lock EH, Hernández SC, Anderson TJ, Schmucker SW, Laskoski M, Mulvaney SP, Bezares FJ, Caldwell JD, Sheehan PE, Robinson JT, Feygelson BN, Walton SG. Etch free graphene transfer to polymers Surface and Coatings Technology. 241: 118-122. DOI: 10.1016/J.Surfcoat.2013.10.080 |
0.447 |
|
2014 |
Robinson ZR, Schmucker SW, McCreary KM, Cobas ED. Chemical Vapor Deposition of Two-Dimensional Crystals Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: 785-833. DOI: 10.1016/B978-0-444-63304-0.00019-6 |
0.328 |
|
2013 |
Robinson JT, Schmucker SW, Diaconescu CB, Long JP, Culbertson JC, Ohta T, Friedman AL, Beechem TE. Electronic hybridization of large-area stacked graphene films. Acs Nano. 7: 637-44. PMID 23240977 DOI: 10.1021/Nn304834P |
0.457 |
|
2012 |
Schmucker SW, Kumar N, Abelson JR, Daly SR, Girolami GS, Bischof MR, Jaeger DL, Reidy RF, Gorman BP, Alexander J, Ballard JB, Randall JN, Lyding JW. Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography. Nature Communications. 3: 935. PMID 22760634 DOI: 10.1038/Ncomms1907 |
0.56 |
|
2012 |
Wood JD, Schmucker SW, Haasch RT, Doidge GP, Nienhaus L, Damhorst GL, Lyons AS, Gruebele M, Bashir R, Pop E, Lyding JW. Improved graphene growth and fluorination on Cu with clean transfer to surfaces Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322101 |
0.703 |
|
2011 |
Wood JD, Schmucker SW, Lyons AS, Pop E, Lyding JW. Effects of polycrystalline cu substrate on graphene growth by chemical vapor deposition. Nano Letters. 11: 4547-54. PMID 21942318 DOI: 10.1021/Nl201566C |
0.701 |
|
2011 |
Xu Y, He KT, Schmucker SW, Guo Z, Koepke JC, Wood JD, Lyding JW, Aluru NR. Inducing electronic changes in graphene through silicon (100) substrate modification. Nano Letters. 11: 2735-42. PMID 21661740 DOI: 10.1021/Nl201022T |
0.724 |
|
2010 |
Randall JN, Ballard JB, Lyding JW, Schmucker S, Von Ehr JR, Saini R, Xu H, Ding Y. Atomic precision patterning on Si: An opportunity for a digitized process Microelectronic Engineering. 87: 955-958. DOI: 10.1016/J.Mee.2009.11.143 |
0.563 |
|
2009 |
Choi H, Huang M, Ballard JB, He KT, Schmucker SW, Lyding JW, Randall JN, Cho K. Theoretical and experimental study of tip electronic structures in scanning tunneling microscope Materials Research Society Symposium Proceedings. 1177: 19-24. DOI: 10.1557/Proc-1177-Z06-03 |
0.622 |
|
2009 |
Randall JN, Lyding JW, Schmucker S, Von Ehr JR, Ballard J, Saini R, Xu H, Ding Y. Atomic precision lithography on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2764-2768. DOI: 10.1116/1.3237096 |
0.595 |
|
Low-probability matches (unlikely to be authored by this person) |
2020 |
Lu P, Anderson E, Schmucker S, Pena F, Frederick E, Ivie J, Bussmann E, Lopez D, Tracy L, Lu T, Wang G, Ward D, Misra S. Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy Microscopy and Microanalysis. 1-3. DOI: 10.1017/S1431927620018371 |
0.292 |
|
2021 |
Owen JHG, Campbell Q, Santini R, Ivie JA, Baczewski A, Schmucker SW, Bussmann E, Misra S, Randall JN. Al-alkyls as acceptor dopant precursors for atomic-scale devices. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 34399418 DOI: 10.1088/1361-648X/ac1ddf |
0.256 |
|
2019 |
Wyrick J, Wang X, Kashid RV, Namboodiri P, Schmucker SW, Hagmann JA, Liu K, Stewart MD, Richter CA, Bryant GW, Silver RM. Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices Advanced Functional Materials. 29: 1903475. DOI: 10.1002/Adfm.201903475 |
0.235 |
|
2017 |
Rossi JE, Soule KJ, Cleveland E, Schmucker SW, Cress CD, Cox ND, Merrill A, Landi BJ. Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes. Journal of Colloid and Interface Science. 495: 140-148. PMID 28193512 DOI: 10.1016/J.Jcis.2017.01.117 |
0.233 |
|
Hide low-probability matches. |