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Dong-Soo Shin, Ph.D. - Publications

Affiliations: 
2001 University of California, San Diego, La Jolla, CA 
Area:
Optics Physics, Electronics and Electrical Engineering
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54 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Shin Y, Park J, Bak BU, Min S, Shin DS, Park JB, Jeong T, Kim J. Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes. Optics Express. 30: 21065-21074. PMID 36224835 DOI: 10.1364/OE.459877  0.351
2020 Islam ABMH, Shim J, Shin D. Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra Japanese Journal of Applied Physics. 59: 38001. DOI: 10.35848/1347-4065/Ab7356  0.329
2020 Shim J, Shin D, Oh C, Jung H. Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes Ecs Journal of Solid State Science and Technology. 9: 15013. DOI: 10.1149/2.0312001Jss  0.362
2019 Oh C, Shim J, Shin D. Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab09Db  0.404
2019 Oh C, Shim J, Shin D. Current─voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters Japanese Journal of Applied Physics. 58: 12005. DOI: 10.7567/1347-4065/Aae92F  0.372
2019 Oh C, Shin D, Shim J. Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs Ieee Photonics Technology Letters. 31: 1441-1444. DOI: 10.1109/Lpt.2019.2930756  0.384
2019 Islam ABMH, Shim J, Shin D. Measurement of the Piezoelectric Field in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes by Electroreflectance Spectroscopy Ieee Journal of Quantum Electronics. 55: 1-7. DOI: 10.1109/Jqe.2019.2928370  0.377
2019 Han D, Shin D, Shim J, Kamiyama S, Takeuchi T, Iwaya M, Akasaki I. Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2917180  0.384
2018 Islam ABMH, Shim JI, Shin DS. Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation. Materials (Basel, Switzerland). 11. PMID 29735933 DOI: 10.3390/Ma11050743  0.416
2018 Shim J, Shin D. Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization Nanophotonics. 7: 1601-1615. DOI: 10.1515/Nanoph-2018-0094  0.356
2018 Lee GW, Kim H, Park J, Shim J, Shin D. Investigation of Luminance Degradation in Organic Light-Emitting Diodes by Impedance Spectroscopy Ieee Photonics Technology Letters. 30: 1183-1185. DOI: 10.1109/Lpt.2018.2838099  0.371
2018 Shim J, Han D, Oh C, Jung H, Shin D. Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature Ieee Journal of Quantum Electronics. 54: 1-6. DOI: 10.1109/Jqe.2018.2795044  0.424
2018 Han D, Shim J, Shin D. Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2790440  0.418
2017 Han D, Shim J, Shin D. Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes Applied Physics Express. 10: 122101. DOI: 10.7567/Apex.10.122101  0.423
2017 Han D, Shim J, Shin D. Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement Applied Physics Express. 10: 52101. DOI: 10.7567/Apex.10.052101  0.414
2017 Islam ABMH, Shin D, Shim J. Interactive Study of Electroreflectance and Photocurrent Spectra in InGaN/GaN-Based Blue LEDs Ieee Journal of Quantum Electronics. 53: 1-6. DOI: 10.1109/Jqe.2017.2740425  0.358
2016 Han DP, Shim JI, Shin DS, Kim KS. Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.081002  0.418
2016 Han D, Kim Y, Shim J, Shin D. Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes Ieee Photonics Technology Letters. 28: 2407-2410. DOI: 10.1109/Lpt.2016.2597158  0.336
2016 Shim JI, Han DP, Shin DS. Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes Ieee Journal of Quantum Electronics. 52. DOI: 10.1109/Jqe.2016.2608798  0.313
2016 Shim JI, Shin DS. Influences of the p-GaN growth temperature on the optoelectronic performances of GaN-based blue light-emitting diodes Ieee Journal of Quantum Electronics. 52. DOI: 10.1109/Jqe.2016.2538730  0.415
2016 Lee GW, Shim JI, Shin DS. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes Applied Physics Letters. 109. DOI: 10.1063/1.4959081  0.405
2016 Woo HJ, Gandhi S, Cho KM, Shin DS, Yi SS, Jeong JH, Jang K. Facile preparation of silicate phosphor activated with low concentration of Eu2+ ions for highly efficient warm white light production Ceramics International. DOI: 10.1016/J.Ceramint.2016.04.158  0.371
2015 Han D, Oh C, Zheng D, Kim H, Shim J, Kim K, Shin D. Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.02Ba01  0.366
2015 Choi H, Zheng D, Kim H, Shim J, Shin D. Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes Journal of the Korean Physical Society. 66: 1554-1558. DOI: 10.3938/Jkps.66.1554  0.394
2015 Shin D, Han D, Zheng D, Oh C, Kim H, Kim K, Shim J. Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques Proceedings of Spie. 9363. DOI: 10.1117/12.2078970  0.421
2015 Han D, Oh C, Kim H, Shim J, Kim K, Shin D. Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes Ieee Transactions On Electron Devices. 62: 587-592. DOI: 10.1109/Ted.2014.2381218  0.401
2014 Usman M, Kim H, Shim J, Shin D. Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy Japanese Journal of Applied Physics. 53: 98002. DOI: 10.7567/Jjap.53.098002  0.37
2014 Shim J, Kim H, Han D, Shin D, Kim KS. Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes Proceedings of Spie. 8986. DOI: 10.1117/12.2037986  0.415
2014 Han D, Kim H, Shim J, Shin D, Kim K. Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes Applied Physics Letters. 105: 191114. DOI: 10.1063/1.4902023  0.4
2014 Han D, Zheng D, Oh C, Kim H, Shim J, Shin D, Kim K. Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements Applied Physics Letters. 104: 151108. DOI: 10.1063/1.4871870  0.44
2013 Shin D, Han D, Shim J, Han D, Moon Y, Park JS. Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jl11  0.415
2013 Choi I, Han D, Yun J, Kim KS, Shin D, Shim J. Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes Applied Physics Express. 6: 52105. DOI: 10.7567/Apex.6.052105  0.401
2013 Yun J, Yeom H, Shim J, Shin D. Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes Journal of the Korean Physical Society. 63: 1218-1221. DOI: 10.3938/Jkps.63.1218  0.424
2013 Park S, Jang D, Shim J, Shin D. Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy Journal of the Korean Physical Society. 62: 1291-1294. DOI: 10.3938/Jkps.62.1291  0.373
2013 Shin D, Lee J, Shim J. Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes Ieee Journal of Quantum Electronics. 49: 1062-1065. DOI: 10.1109/Jqe.2013.2287100  0.41
2013 Han D, Kang M, Oh C, Kim H, Kim K, Shin D, Shim J. Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage Physica Status Solidi (a). 210: 2204-2208. DOI: 10.1002/Pssa.201329187  0.429
2012 Kim H, Han D, Oh J, Shim J, Shin D, Ryu H. Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence Journal of the Korean Physical Society. 60: 1934-1938. DOI: 10.3938/Jkps.60.1934  0.372
2012 Kim S, Yun J, Shin D, Shim J. Optical and Electrical Characteristics of GaN-based Blue LEDs after Low-current Stress Korean Journal of Optics and Photonics. 23: 64-70. DOI: 10.3807/Kjop.2012.23.2.064  0.402
2012 Yun J, Han D, Shim J, Shin D. Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes Ieee Transactions On Electron Devices. 59: 1799-1802. DOI: 10.1109/Ted.2012.2189571  0.351
2012 Park S, Lee J, Jang D, Kim H, Shin D, Ryu H, Shim J. Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes Ieee Journal of Quantum Electronics. 48: 500-506. DOI: 10.1109/Jqe.2012.2186610  0.357
2012 Shin D, Han D, Oh J, Shim J. Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Applied Physics Letters. 100: 153506. DOI: 10.1063/1.3703313  0.387
2012 Ryu H, Shin D, Shim J. Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material Applied Physics Letters. 100: 131109. DOI: 10.1063/1.3698113  0.405
2012 Shim J, Han D, Kim H, Shin D, Lin G, Meyaard DS, Shan Q, Cho J, Schubert EF, Shim H, Sone C. Efficiency droop in AlGaInP and GaInN light-emitting diodes Applied Physics Letters. 100: 111106. DOI: 10.1063/1.3694044  0.387
2011 Shim J, Kim H, Shin D, Yoo H. Erratum: An Explanation of Efficiency Droop in InGaN-based Light Emitting Journal of the Korean Physical Society. 58: 859-859. DOI: 10.3938/Jkps.58.859  0.369
2011 Shim J, Kim H, Shin D, Yoo H. An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas Journal of the Korean Physical Society. 58: 503-508. DOI: 10.3938/Jkps.58.503  0.36
2011 Shim J, Kim H, Shin D, Ryu H. An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes Proceedings of Spie. 7939. DOI: 10.1117/12.874304  0.393
2010 Kim H, Shin D, Ryu H, Shim J. Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation Japanese Journal of Applied Physics. 49: 112402. DOI: 10.1143/Jjap.49.112402  0.371
2010 Han D, Shim J, Shin D, Nam E, Park H. Effect of temperature distribution and current crowding on the performance of lateral GaN‐based light‐emitting diodes Physica Status Solidi (C). 7: 2133-2135. DOI: 10.1002/Pssc.200983439  0.386
2009 Jang D, Shim J, Shin D. Enhancement of Light Extraction Efficiency Using Lozenge-Shaped GaN-Based Light-Emitting Diodes Ieee Photonics Technology Letters. 21: 760-762. DOI: 10.1109/Lpt.2009.2017504  0.401
2008 Kim K, Shin D. Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators Japanese Journal of Applied Physics. 47: 6361-6363. DOI: 10.1143/Jjap.47.6361  0.321
2007 Kim K, Shin D. Comparison of Quantum Wells based on InGaAs(P)/InP and InGa(Al)As/InAlAs Material Systems in View of Carrier Escape Times for High-Saturation-Optical-Power Electroabsorption Modulators Journal of the Optical Society of Korea. 11: 133-137. DOI: 10.3807/Josk.2007.11.3.133  0.359
2006 Shin DS. Reduction in escape times of photogenerated charge carriers with asymmetric intrastep quantum wells and subsequent improvement in saturation optical intensity Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 9063-9065. DOI: 10.1143/Jjap.45.9063  0.368
2005 Shin D, Jeong H. Chirp Parameter of Electroabsorption Modulators with InGaAsP Intrastep Quantum Wells Japanese Journal of Applied Physics. 44. DOI: 10.1143/Jjap.44.L590  0.36
2001 Shin D, Yu PKL, Pappert SA. High-power electroabsorption modulator using intra-step-barrier quantum wells Journal of Applied Physics. 89: 1515-1517. DOI: 10.1063/1.1333719  0.357
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