Christopher J. Palmstrom - Publications

Affiliations: 
Material Science and Engineering University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Electricity and Magnetism Physics

23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Drachmann A, Suominen HJ, Kjaergaard M, Shojaei B, Palmstrom C, Marcus CM, Nichele F. Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum. Nano Letters. PMID 28072541 DOI: 10.1021/Acs.Nanolett.6B04964  0.361
2014 Patel SJ, Kawasaki JK, Logan J, Schultz BD, Adell J, Thiagarajan B, Mikkelsen A, Palmstrøm CJ. Surface and electronic structure of epitaxial PtLuSb (001) thin films Applied Physics Letters. 104. DOI: 10.1063/1.4879475  0.408
2014 Merritt TR, Meeker MA, Magill BA, Khodaparast GA, McGill S, Tischler JG, Choi SG, Palmstrøm CJ. Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers Journal of Applied Physics. 115. DOI: 10.1063/1.4876121  0.315
2013 Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ. Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4807715  0.302
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5  0.345
2011 Buschbeck J, Kawasaki JK, Kozhanov A, James RD, Palmstrøm CJ. Martensite transformation of epitaxial Ni-Ti films Applied Physics Letters. 98. DOI: 10.1063/1.3589361  0.383
2006 Farrell HH, Hilton JL, Schultz BD, Palmstrom CJ. Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2018-2023. DOI: 10.1116/1.2220573  0.528
2004 Dong JW, Xie JQ, Lu J, Adelmann C, Palmstrøm CJ, Cui J, Pan Q, Shield TW, James RD, McKernan S. Shape memory and ferromagnetic shape memory effects in single-crystal Ni 2MnGa thin films Journal of Applied Physics. 95: 2593-2600. DOI: 10.1063/1.1643199  0.345
2002 Engebretson DM, Berezovsky J, Park JP, Chen LC, Palmstrom CJ, Crowell PA. Time-domain ferromagnetic resonance in epitaxial thin films Journal of Applied Physics. 91: 8040-8042. DOI: 10.1063/1.1450817  0.352
2002 Pan Q, Dong JW, Palmstrom CJ, Cui J, James RD. Magnetic domain observations of freestanding single crystal patterned Ni 2MnGa films Journal of Applied Physics. 91: 7812-7814. DOI: 10.1063/1.1446114  0.314
2001 Dong JW, Lu J, Xie JQ, Chen LC, James RD, McKernan S, Palmstrom CJ. MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs Physica E: Low-Dimensional Systems and Nanostructures. 10: 428-432. DOI: 10.1016/S1386-9477(01)00131-X  0.412
2000 Dong JW, Chen LC, McKernan S, Xie JQ, Figus MT, James RD, Palmstrom CJ. Formation and characterization of single crystal Ni2MnGa thin films Materials Research Society Symposium - Proceedings. 604: 297-302.  0.347
1999 Dong JW, Chen LC, McKernan S, Xie JQ, Figus MT, James RD, Palmstrom CJ. Formation and characterization of single crystal Ni 2 MnGa thin films Mrs Proceedings. 604: 297-302. DOI: 10.1557/Proc-604-297  0.438
1999 Bhattacharya K, Desimone A, Hane KF, James RD, Palmstrom C. Tents and tunnels on martensitic films Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273: 685-689. DOI: 10.1016/S0921-5093(99)00397-4  0.359
1998 Kramer DE, Chen LC, Palmstrom CJ, Gerberich WW. Substrate effects on yield point phenomena in epitaxial thin films Materials Research Society Symposium - Proceedings. 522: 89-94. DOI: 10.1557/Proc-522-89  0.388
1990 Zhu JG, Carter CB, Palmstrom CJ. Misfit Dislocations at Mismatched Epitactic Heterojunctions Mrs Proceedings. 198. DOI: 10.1557/Proc-198-171  0.383
1986 Palmstrom CJ, Galvin GJ, Schwarz SA, De Cooman BC, Mayer JW. SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs Materials Research Society Symposia Proceedings. 56: 67-72. DOI: 10.1557/Proc-56-67  0.393
1985 Brat T, Eizenberg M, Fastow R, Palmstrom CJ, Mayer JW. Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon Journal of Applied Physics. 57: 264-269. DOI: 10.1063/1.334798  0.413
1984 Kavanagh KL, Chen SH, Palmstrom CJ, Carter CB, Mukherjee SD. RBS AND TEM ANALYSIS OF Ta SILICIDES ON GaAs Materials Research Society Symposia Proceedings. 25: 143-148. DOI: 10.1557/Proc-25-143  0.424
1983 Gyulai J, Fastow R, Kavanagh K, Thompson MO, Palmstrom CJ, Hewett CA, Mayer JW. CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY PULSED ION BEAM ANNEALING Materials Research Society Symposia Proceedings. 13: 455-460. DOI: 10.1557/Proc-13-455  0.373
1983 Fowler DE, Gyulai J, Palmstrom C. Electron inelastic mean free path (IMFP) in single crystal BeO by Rutherford backscattering (RBS) and Auger electron spectroscopy (AES) Journal of Vacuum Science and Technology. 1: 1021-1025. DOI: 10.1116/1.572330  0.305
1983 Palmström CJ, Gyulai J, Mayer JW. Phase separation in interactions of tantalum–chromium alloy on Si Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 1: 452-454. DOI: 10.1116/1.571945  0.337
1978 Palmström CJ, Morgan DV, Howes MJ. Contact degradation of GaAs transferred electron devices Nuclear Instruments and Methods. 150: 305-311. DOI: 10.1016/0029-554X(78)90380-4  0.306
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