| Year |
Citation |
Score |
| 2023 |
Chen AH, Dempsey C, Pendharkar M, Sharma A, Zhang B, Tan S, Bellon L, Frolov SM, Palmstrøm CJ, Bellet-Amalric E, Hocevar M. Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates. Nanotechnology. PMID 37890472 DOI: 10.1088/1361-6528/ad079e |
0.328 |
|
| 2017 |
Drachmann A, Suominen HJ, Kjaergaard M, Shojaei B, Palmstrom C, Marcus CM, Nichele F. Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum. Nano Letters. PMID 28072541 DOI: 10.1021/Acs.Nanolett.6B04964 |
0.362 |
|
| 2014 |
Patel SJ, Kawasaki JK, Logan J, Schultz BD, Adell J, Thiagarajan B, Mikkelsen A, Palmstrøm CJ. Surface and electronic structure of epitaxial PtLuSb (001) thin films Applied Physics Letters. 104. DOI: 10.1063/1.4879475 |
0.408 |
|
| 2014 |
Merritt TR, Meeker MA, Magill BA, Khodaparast GA, McGill S, Tischler JG, Choi SG, Palmstrøm CJ. Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers Journal of Applied Physics. 115. DOI: 10.1063/1.4876121 |
0.315 |
|
| 2013 |
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ. Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4807715 |
0.302 |
|
| 2012 |
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5 |
0.346 |
|
| 2011 |
Buschbeck J, Kawasaki JK, Kozhanov A, James RD, Palmstrøm CJ. Martensite transformation of epitaxial Ni-Ti films Applied Physics Letters. 98. DOI: 10.1063/1.3589361 |
0.383 |
|
| 2006 |
Farrell HH, Hilton JL, Schultz BD, Palmstrom CJ. Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2018-2023. DOI: 10.1116/1.2220573 |
0.528 |
|
| 2004 |
Dong JW, Xie JQ, Lu J, Adelmann C, Palmstrøm CJ, Cui J, Pan Q, Shield TW, James RD, McKernan S. Shape memory and ferromagnetic shape memory effects in single-crystal Ni 2MnGa thin films Journal of Applied Physics. 95: 2593-2600. DOI: 10.1063/1.1643199 |
0.346 |
|
| 2002 |
Engebretson DM, Berezovsky J, Park JP, Chen LC, Palmstrom CJ, Crowell PA. Time-domain ferromagnetic resonance in epitaxial thin films Journal of Applied Physics. 91: 8040-8042. DOI: 10.1063/1.1450817 |
0.352 |
|
| 2002 |
Pan Q, Dong JW, Palmstrom CJ, Cui J, James RD. Magnetic domain observations of freestanding single crystal patterned Ni 2MnGa films Journal of Applied Physics. 91: 7812-7814. DOI: 10.1063/1.1446114 |
0.314 |
|
| 2001 |
Dong JW, Lu J, Xie JQ, Chen LC, James RD, McKernan S, Palmstrom CJ. MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs Physica E: Low-Dimensional Systems and Nanostructures. 10: 428-432. DOI: 10.1016/S1386-9477(01)00131-X |
0.412 |
|
| 2000 |
Dong JW, Chen LC, McKernan S, Xie JQ, Figus MT, James RD, Palmstrom CJ. Formation and characterization of single crystal Ni2MnGa thin films Materials Research Society Symposium - Proceedings. 604: 297-302. |
0.348 |
|
| 1999 |
Dong JW, Chen LC, McKernan S, Xie JQ, Figus MT, James RD, Palmstrom CJ. Formation and characterization of single crystal Ni 2 MnGa thin films Mrs Proceedings. 604: 297-302. DOI: 10.1557/Proc-604-297 |
0.438 |
|
| 1999 |
Bhattacharya K, Desimone A, Hane KF, James RD, Palmstrom C. Tents and tunnels on martensitic films Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273: 685-689. DOI: 10.1016/S0921-5093(99)00397-4 |
0.359 |
|
| 1998 |
Kramer DE, Chen LC, Palmstrom CJ, Gerberich WW. Substrate effects on yield point phenomena in epitaxial thin films Materials Research Society Symposium - Proceedings. 522: 89-94. DOI: 10.1557/Proc-522-89 |
0.389 |
|
| 1990 |
Zhu JG, Carter CB, Palmstrom CJ. Misfit Dislocations at Mismatched Epitactic Heterojunctions Mrs Proceedings. 198. DOI: 10.1557/Proc-198-171 |
0.384 |
|
| 1986 |
Palmstrom CJ, Galvin GJ, Schwarz SA, De Cooman BC, Mayer JW. SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs Materials Research Society Symposia Proceedings. 56: 67-72. DOI: 10.1557/Proc-56-67 |
0.393 |
|
| 1985 |
Brat T, Eizenberg M, Fastow R, Palmstrom CJ, Mayer JW. Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon Journal of Applied Physics. 57: 264-269. DOI: 10.1063/1.334798 |
0.413 |
|
| 1984 |
Kavanagh KL, Chen SH, Palmstrom CJ, Carter CB, Mukherjee SD. RBS AND TEM ANALYSIS OF Ta SILICIDES ON GaAs Materials Research Society Symposia Proceedings. 25: 143-148. DOI: 10.1557/Proc-25-143 |
0.424 |
|
| 1983 |
Gyulai J, Fastow R, Kavanagh K, Thompson MO, Palmstrom CJ, Hewett CA, Mayer JW. CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY PULSED ION BEAM ANNEALING Materials Research Society Symposia Proceedings. 13: 455-460. DOI: 10.1557/Proc-13-455 |
0.373 |
|
| 1983 |
Fowler DE, Gyulai J, Palmstrom C. Electron inelastic mean free path (IMFP) in single crystal BeO by Rutherford backscattering (RBS) and Auger electron spectroscopy (AES) Journal of Vacuum Science and Technology. 1: 1021-1025. DOI: 10.1116/1.572330 |
0.305 |
|
| 1983 |
Palmström CJ, Gyulai J, Mayer JW. Phase separation in interactions of tantalum–chromium alloy on Si Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 1: 452-454. DOI: 10.1116/1.571945 |
0.337 |
|
| 1978 |
Palmström CJ, Morgan DV, Howes MJ. Contact degradation of GaAs transferred electron devices Nuclear Instruments and Methods. 150: 305-311. DOI: 10.1016/0029-554X(78)90380-4 |
0.306 |
|
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