Year |
Citation |
Score |
2018 |
Li Z, Zhang L, Zhang Z, Ju T, Zhang X, Zhang B. Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers Crystal Research and Technology. 53: 1700234. DOI: 10.1002/Crat.201700234 |
0.331 |
|
2015 |
Wang H, Niu Y, Yang F, Cai Y, Zhang Z, Zeng Z, Wang M, Zeng C, Zhang B. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes* Journal of Semiconductors. 36: 104006. DOI: 10.1088/1674-4926/36/10/104006 |
0.364 |
|
2007 |
Zhang Z, Stahlbush RE, Pirouz P, Sudarshan TS. Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer Journal of Electronic Materials. 36: 539-542. DOI: 10.1007/S11664-007-0129-1 |
0.522 |
|
2006 |
Zhang Z, Moulton E, Sudarshan TS. Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate Applied Physics Letters. 89: 081910. DOI: 10.1063/1.2337874 |
0.52 |
|
2006 |
Zhang Z, Maximenko SI, Shrivastava A, Sadagopan P, Gao Y, Sudarshan TS. Propagation of stacking faults from surface damage in SiC PiN diodes Applied Physics Letters. 88: 62101. DOI: 10.1063/1.2172015 |
0.546 |
|
2005 |
Zhang Z, Sudarshan TS. Evolution of basal plane dislocations during 4H -silicon carbide homoepitaxy Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2108109 |
0.547 |
|
2005 |
Zhang Z, Sudarshan TS. Basal plane dislocation-free epitaxy of silicon carbide Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093931 |
0.561 |
|
2004 |
Li J, Gong Z, Chen C, Adivarahan V, Gaevski M, Kuokstis E, Shatalov M, Gao Y, Zhang Z, Arjunan A, Sudarshan TS, Maruska HP, Yang J, Asif M. Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a -plane SiC Substrates Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E2.9 |
0.476 |
|
2004 |
Gao Y, Zhang Z, Bondokov R, Soloviev S, Sudarshan T. The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.20 |
0.543 |
|
2004 |
Zhang Z, Gao Y, Sudarshan T. Delineating Structural Defects in Highly Doped n-Type 4H-SiC Substrates Using a Combination of Thermal Diffusion and Molten KOH Etching Electrochemical and Solid State Letters. 7. DOI: 10.1149/1.1805500 |
0.55 |
|
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