| Year |
Citation |
Score |
| 2020 |
Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. Acs Applied Materials & Interfaces. PMID 32189495 DOI: 10.1021/Acsami.9B21070 |
0.377 |
|
| 2019 |
Bao L, Zhu J, Yu Z, Jia R, Cai Q, Wang Z, Xu L, Wu Y, Yang Y, Cai Y, Huang R. Dual-Gated MoS2 Neuristor for Neuromorphic Computing. Acs Applied Materials & Interfaces. PMID 31597432 DOI: 10.1021/Acsami.9B10072 |
0.333 |
|
| 2019 |
Li S, Tian M, Gao Q, Wang M, Li T, Hu Q, Li X, Wu Y. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials. PMID 31406368 DOI: 10.1038/S41563-019-0455-8 |
0.371 |
|
| 2019 |
Li X, Yu Z, Xiong X, Li T, Gao T, Wang R, Huang R, Wu Y. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances. 5: eaau3194. PMID 31245534 DOI: 10.1126/Sciadv.Aau3194 |
0.423 |
|
| 2019 |
Li T, Li X, Tian M, Hu Q, Wang X, Li S, Wu Y. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures. Nanoscale. PMID 30830137 DOI: 10.1039/C8Nr09674K |
0.361 |
|
| 2019 |
Ye P, Xuan Y, Wu Y, Xu M. Inversion-Mode Inxga1-Xas Mosfets (X=0.53,0.65,0.75) with Atomic-Layerdeposited High-K Dielectrics Ecs Transactions. 19: 605-614. DOI: 10.1149/1.3122119 |
0.465 |
|
| 2019 |
Hu Q, Hu B, Gu C, Li T, Li S, Li S, Li X, Wu Y. Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering Ieee Transactions On Electron Devices. 66: 4591-4596. DOI: 10.1109/Ted.2019.2940749 |
0.363 |
|
| 2019 |
Wang M, Li X, Xiong X, Song J, Gu C, Zhan D, Hu Q, Li S, Wu Y. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition Ieee Electron Device Letters. 40: 419-422. DOI: 10.1109/Led.2019.2895864 |
0.338 |
|
| 2019 |
Tian M, Li X, Gao Q, Xiong X, Zhang Z, Wu Y. Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene Ieee Electron Device Letters. 40: 325-328. DOI: 10.1109/Led.2018.2889153 |
0.394 |
|
| 2019 |
Li S, Hu Q, Wang X, Li T, Li X, Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO
$_{{x}}$
as Gate Dielectric Ieee Electron Device Letters. 40: 295-298. DOI: 10.1109/Led.2018.2888486 |
0.375 |
|
| 2019 |
Tian M, Hu B, Yang H, Tang C, Wang M, Gao Q, Xiong X, Zhang Z, Li T, Li X, Gu C, Wu Y. Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors Advanced Electronic Materials. 5: 1800711. DOI: 10.1002/Aelm.201800711 |
0.317 |
|
| 2018 |
Li X, Wu J, Ye Y, Li S, Li T, Xiong X, Xu X, Gao T, Xie X, Wu Y. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering. Acs Applied Materials & Interfaces. PMID 30540166 DOI: 10.1021/Acsami.8B16507 |
0.425 |
|
| 2018 |
Gao Q, Zhang Z, Xu X, Song J, Li X, Wu Y. Scalable high performance radio frequency electronics based on large domain bilayer MoS. Nature Communications. 9: 4778. PMID 30429471 DOI: 10.1038/S41467-018-07135-8 |
0.359 |
|
| 2018 |
Zhang Y, Fan J, Huang Q, Zhu J, Zhao Y, Li M, Wu Y, Huang R. Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors. Scientific Reports. 8: 15194. PMID 30315203 DOI: 10.1038/S41598-018-33673-8 |
0.302 |
|
| 2018 |
Tian M, Li X, Li T, Gao Q, Xiong X, Hu Q, Wang M, Wang X, Wu Y. High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies. Acs Applied Materials & Interfaces. PMID 29847910 DOI: 10.1021/Acsami.8B04065 |
0.401 |
|
| 2018 |
Li X, Xiong X, Li T, Gao T, Wu Y. Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics Ieee Electron Device Letters. 39: 1952-1955. DOI: 10.1109/Led.2018.2875790 |
0.395 |
|
| 2018 |
Hu Q, Li S, Li T, Wang X, Li X, Wu Y. Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric Ieee Electron Device Letters. 39: 1377-1380. DOI: 10.1109/Led.2018.2856934 |
0.344 |
|
| 2018 |
Gao T, Li X, Xiong X, Huang M, Li T, Wu Y. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors Ieee Electron Device Letters. 39: 769-772. DOI: 10.1109/Led.2018.2820841 |
0.374 |
|
| 2018 |
Xiong X, Li X, Huang M, Li T, Gao T, Wu Y. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric Ieee Electron Device Letters. 39: 127-130. DOI: 10.1109/Led.2017.2779877 |
0.412 |
|
| 2018 |
Li X, Li T, Zhang Z, Xiong X, Li S, Wu Y. Tunable Low-Frequency Noise in Dual-Gate MoS2Transistors Ieee Electron Device Letters. 39: 131-134. DOI: 10.1109/Led.2017.2771832 |
0.358 |
|
| 2018 |
Zhang Z, Xu X, Song J, Gao Q, Li S, Hu Q, Li X, Wu Y. High-performance transistors based on monolayer CVD MoS2 grown on molten glass Applied Physics Letters. 113: 202103. DOI: 10.1063/1.5051781 |
0.367 |
|
| 2018 |
Liang L, Li W, Li S, Li X, Wu Y. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric Aip Advances. 8: 125314. DOI: 10.1063/1.5051615 |
0.346 |
|
| 2017 |
Li X, Grassi R, Li S, Li T, Xiong X, Low T, Wu Y. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters. PMID 29207233 DOI: 10.1021/Acs.Nanolett.7B02278 |
0.37 |
|
| 2017 |
Li X, Xiong X, Li T, Li S, Zhang Z, Wu Y. Effect of Dielectric Interface on the Performance of MoS2 Transistors. Acs Applied Materials & Interfaces. 9: 44602-44608. PMID 29199423 DOI: 10.1021/Acsami.7B14031 |
0.435 |
|
| 2017 |
Huang M, Li S, Zhang Z, Xiong X, Li X, Wu Y. Multifunctional high-performance van der Waals heterostructures. Nature Nanotechnology. PMID 28991241 DOI: 10.1038/Nnano.2017.208 |
0.404 |
|
| 2017 |
Song H, Li T, Zhang J, Zhou Y, Luo J, Chen C, Yang B, Ge C, Wu Y, Tang J. Highly Anisotropic Sb2 Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure. Advanced Materials (Deerfield Beach, Fla.). PMID 28589700 DOI: 10.1002/Adma.201700441 |
0.319 |
|
| 2017 |
Gao Q, Li X, Tian M, Xiong X, Zhang Z, Wu Y. Short-Channel Graphene Mixer With High Linearity Ieee Electron Device Letters. 38: 1168-1171. DOI: 10.1109/Led.2017.2718732 |
0.359 |
|
| 2017 |
Grassi R, Wu Y, Koester SJ, Low T. Semianalytical model of the contact resistance in two-dimensional semiconductors Physical Review B. 96. DOI: 10.1103/Physrevb.96.165439 |
0.351 |
|
| 2017 |
Li X, Xiong X, Wu Y. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices Chinese Physics B. 26: 037307. DOI: 10.1088/1674-1056/26/3/037307 |
0.348 |
|
| 2017 |
Li T, Zhang Z, Li X, Huang M, Li S, Li S, Wu Y. High field transport of high performance black phosphorus transistors Applied Physics Letters. 110: 163507. DOI: 10.1063/1.4982033 |
0.436 |
|
| 2016 |
Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology. 27: 434002. PMID 27658938 DOI: 10.1088/0957-4484/27/43/434002 |
0.517 |
|
| 2016 |
Huang M, Wang M, Chen C, Ma Z, Li X, Han J, Wu Y. Broadband Black-Phosphorus Photodetectors with High Responsivity. Advanced Materials (Deerfield Beach, Fla.). PMID 26969832 DOI: 10.1002/Adma.201506352 |
0.367 |
|
| 2016 |
Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale. PMID 26806878 DOI: 10.1039/C5Nr06647F |
0.579 |
|
| 2016 |
Li X, Gao T, Wu Y. Development of two-dimensional materials for electronic applications Science China Information Sciences. 1-14. DOI: 10.1007/S11432-016-5559-Z |
0.359 |
|
| 2015 |
Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/Acs.Nanolett.5B03366 |
0.699 |
|
| 2015 |
Li X, Lu X, Li T, Yang W, Fang J, Zhang G, Wu Y. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. Acs Nano. PMID 26435195 DOI: 10.1021/Acsnano.5B05283 |
0.375 |
|
| 2015 |
Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance potential and limit of MoS2 transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 1547-52. PMID 25586919 DOI: 10.1002/Adma.201405068 |
0.565 |
|
| 2014 |
Rakheja S, Wu Y, Wang H, Palacios T, Avouris P, Antoniadis DA. An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors Ieee Transactions On Nanotechnology. 13: 1005-1013. DOI: 10.1109/Tnano.2014.2344437 |
0.363 |
|
| 2013 |
Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X, Guinea F, Avouris P, Xia F. Damping pathways of mid-infrared plasmons in graphene nanostructures Nature Photonics. 7: 394-399. DOI: 10.1038/Nphoton.2013.57 |
0.339 |
|
| 2012 |
Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A |
0.328 |
|
| 2012 |
Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/Nl300904K |
0.38 |
|
| 2012 |
Yan H, Li X, Chandra B, Tulevski G, Wu Y, Freitag M, Zhu W, Avouris P, Xia F. Tunable infrared plasmonic devices using graphene/insulator stacks. Nature Nanotechnology. 7: 330-4. PMID 22522668 DOI: 10.1038/Nnano.2012.59 |
0.375 |
|
| 2012 |
Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/Nn205106Z |
0.392 |
|
| 2012 |
Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P. Quantum behavior of graphene transistors near the scaling limit. Nano Letters. 12: 1417-23. PMID 22316333 DOI: 10.1021/Nl204088B |
0.384 |
|
| 2012 |
Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325 |
0.319 |
|
| 2011 |
Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428 |
0.343 |
|
| 2011 |
Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/Nature09979 |
0.38 |
|
| 2011 |
Xia F, Perebeinos V, Lin YM, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology. 6: 179-84. PMID 21297624 DOI: 10.1038/Nnano.2011.6 |
0.349 |
|
| 2011 |
Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934 |
0.355 |
|
| 2010 |
Wu Y, Ye P, Mirza IO, Arce GR, Prather DW. Experimental demonstration of an optical-sectioning compressive sensing microscope (CSM). Optics Express. 18: 24565-78. PMID 21164803 DOI: 10.1364/Oe.18.024565 |
0.423 |
|
| 2010 |
Ye PD, Gu JJ, Wu YQ, Xu M, Xuan Y, Shen T, Neal AT. ALD high-k as a common gate stack solution for nano-electronics Ecs Transactions. 28: 51-68. DOI: 10.1149/1.3372563 |
0.554 |
|
| 2010 |
Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671 |
0.347 |
|
| 2010 |
Wang W, Deng J, Hwang JCM, Xuan Y, Wu Y, Ye PD. Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 96: 072102. DOI: 10.1063/1.3315870 |
0.527 |
|
| 2007 |
Ye P, Lu ZL, Du BM, Chen Z, Wu YF, Yu XH, Zhao YC. Effect of xuezhikang on cardiovascular events and mortality in elderly patients with a history of myocardial infarction: a subgroup analysis of elderly subjects from the China Coronary Secondary Prevention Study. Journal of the American Geriatrics Society. 55: 1015-22. PMID 17608873 DOI: 10.1111/j.1532-5415.2007.01230.x |
0.407 |
|
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