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Yanqing Wu, Ph.D. - Publications

Affiliations: 
2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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53 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y. Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. Acs Applied Materials & Interfaces. PMID 32189495 DOI: 10.1021/Acsami.9B21070  0.375
2019 Bao L, Zhu J, Yu Z, Jia R, Cai Q, Wang Z, Xu L, Wu Y, Yang Y, Cai Y, Huang R. Dual-Gated MoS2 Neuristor for Neuromorphic Computing. Acs Applied Materials & Interfaces. PMID 31597432 DOI: 10.1021/Acsami.9B10072  0.331
2019 Li S, Tian M, Gao Q, Wang M, Li T, Hu Q, Li X, Wu Y. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials. PMID 31406368 DOI: 10.1038/S41563-019-0455-8  0.37
2019 Li X, Yu Z, Xiong X, Li T, Gao T, Wang R, Huang R, Wu Y. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances. 5: eaau3194. PMID 31245534 DOI: 10.1126/Sciadv.Aau3194  0.42
2019 Li T, Li X, Tian M, Hu Q, Wang X, Li S, Wu Y. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures. Nanoscale. PMID 30830137 DOI: 10.1039/C8Nr09674K  0.359
2019 Ye P, Xuan Y, Wu Y, Xu M. Inversion-Mode Inxga1-Xas Mosfets (X=0.53,0.65,0.75) with Atomic-Layerdeposited High-K Dielectrics Ecs Transactions. 19: 605-614. DOI: 10.1149/1.3122119  0.461
2019 Hu Q, Hu B, Gu C, Li T, Li S, Li S, Li X, Wu Y. Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering Ieee Transactions On Electron Devices. 66: 4591-4596. DOI: 10.1109/Ted.2019.2940749  0.361
2019 Wang M, Li X, Xiong X, Song J, Gu C, Zhan D, Hu Q, Li S, Wu Y. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition Ieee Electron Device Letters. 40: 419-422. DOI: 10.1109/Led.2019.2895864  0.337
2019 Tian M, Li X, Gao Q, Xiong X, Zhang Z, Wu Y. Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene Ieee Electron Device Letters. 40: 325-328. DOI: 10.1109/Led.2018.2889153  0.392
2019 Li S, Hu Q, Wang X, Li T, Li X, Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ as Gate Dielectric Ieee Electron Device Letters. 40: 295-298. DOI: 10.1109/Led.2018.2888486  0.374
2019 Tian M, Hu B, Yang H, Tang C, Wang M, Gao Q, Xiong X, Zhang Z, Li T, Li X, Gu C, Wu Y. Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors Advanced Electronic Materials. 5: 1800711. DOI: 10.1002/Aelm.201800711  0.316
2018 Li X, Wu J, Ye Y, Li S, Li T, Xiong X, Xu X, Gao T, Xie X, Wu Y. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering. Acs Applied Materials & Interfaces. PMID 30540166 DOI: 10.1021/Acsami.8B16507  0.422
2018 Gao Q, Zhang Z, Xu X, Song J, Li X, Wu Y. Scalable high performance radio frequency electronics based on large domain bilayer MoS. Nature Communications. 9: 4778. PMID 30429471 DOI: 10.1038/S41467-018-07135-8  0.357
2018 Tian M, Li X, Li T, Gao Q, Xiong X, Hu Q, Wang M, Wang X, Wu Y. High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies. Acs Applied Materials & Interfaces. PMID 29847910 DOI: 10.1021/Acsami.8B04065  0.399
2018 Li X, Xiong X, Li T, Gao T, Wu Y. Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics Ieee Electron Device Letters. 39: 1952-1955. DOI: 10.1109/Led.2018.2875790  0.393
2018 Hu Q, Li S, Li T, Wang X, Li X, Wu Y. Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric Ieee Electron Device Letters. 39: 1377-1380. DOI: 10.1109/Led.2018.2856934  0.343
2018 Gao T, Li X, Xiong X, Huang M, Li T, Wu Y. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors Ieee Electron Device Letters. 39: 769-772. DOI: 10.1109/Led.2018.2820841  0.372
2018 Xiong X, Li X, Huang M, Li T, Gao T, Wu Y. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric Ieee Electron Device Letters. 39: 127-130. DOI: 10.1109/Led.2017.2779877  0.41
2018 Li X, Li T, Zhang Z, Xiong X, Li S, Wu Y. Tunable Low-Frequency Noise in Dual-Gate MoS2Transistors Ieee Electron Device Letters. 39: 131-134. DOI: 10.1109/Led.2017.2771832  0.356
2018 Zhang Z, Xu X, Song J, Gao Q, Li S, Hu Q, Li X, Wu Y. High-performance transistors based on monolayer CVD MoS2 grown on molten glass Applied Physics Letters. 113: 202103. DOI: 10.1063/1.5051781  0.365
2018 Liang L, Li W, Li S, Li X, Wu Y. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric Aip Advances. 8: 125314. DOI: 10.1063/1.5051615  0.344
2017 Li X, Grassi R, Li S, Li T, Xiong X, Low T, Wu Y. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters. PMID 29207233 DOI: 10.1021/Acs.Nanolett.7B02278  0.368
2017 Li X, Xiong X, Li T, Li S, Zhang Z, Wu Y. Effect of Dielectric Interface on the Performance of MoS2 Transistors. Acs Applied Materials & Interfaces. 9: 44602-44608. PMID 29199423 DOI: 10.1021/Acsami.7B14031  0.432
2017 Huang M, Li S, Zhang Z, Xiong X, Li X, Wu Y. Multifunctional high-performance van der Waals heterostructures. Nature Nanotechnology. PMID 28991241 DOI: 10.1038/Nnano.2017.208  0.402
2017 Song H, Li T, Zhang J, Zhou Y, Luo J, Chen C, Yang B, Ge C, Wu Y, Tang J. Highly Anisotropic Sb2 Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure. Advanced Materials (Deerfield Beach, Fla.). PMID 28589700 DOI: 10.1002/Adma.201700441  0.318
2017 Gao Q, Li X, Tian M, Xiong X, Zhang Z, Wu Y. Short-Channel Graphene Mixer With High Linearity Ieee Electron Device Letters. 38: 1168-1171. DOI: 10.1109/Led.2017.2718732  0.357
2017 Grassi R, Wu Y, Koester SJ, Low T. Semianalytical model of the contact resistance in two-dimensional semiconductors Physical Review B. 96. DOI: 10.1103/Physrevb.96.165439  0.35
2017 Li X, Xiong X, Wu Y. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices Chinese Physics B. 26: 037307. DOI: 10.1088/1674-1056/26/3/037307  0.346
2017 Li T, Zhang Z, Li X, Huang M, Li S, Li S, Wu Y. High field transport of high performance black phosphorus transistors Applied Physics Letters. 110: 163507. DOI: 10.1063/1.4982033  0.434
2016 Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology. 27: 434002. PMID 27658938 DOI: 10.1088/0957-4484/27/43/434002  0.514
2016 Huang M, Wang M, Chen C, Ma Z, Li X, Han J, Wu Y. Broadband Black-Phosphorus Photodetectors with High Responsivity. Advanced Materials (Deerfield Beach, Fla.). PMID 26969832 DOI: 10.1002/Adma.201506352  0.364
2016 Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale. PMID 26806878 DOI: 10.1039/C5Nr06647F  0.575
2016 Li X, Gao T, Wu Y. Development of two-dimensional materials for electronic applications Science China Information Sciences. 1-14. DOI: 10.1007/S11432-016-5559-Z  0.358
2015 Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, tunable magnetoresistance in non-magnetic III-V nanowires. Nano Letters. PMID 26561728 DOI: 10.1021/Acs.Nanolett.5B03366  0.697
2015 Li X, Lu X, Li T, Yang W, Fang J, Zhang G, Wu Y. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride. Acs Nano. PMID 26435195 DOI: 10.1021/Acsnano.5B05283  0.374
2015 Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance potential and limit of MoS2 transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 1547-52. PMID 25586919 DOI: 10.1002/Adma.201405068  0.561
2014 Rakheja S, Wu Y, Wang H, Palacios T, Avouris P, Antoniadis DA. An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors Ieee Transactions On Nanotechnology. 13: 1005-1013. DOI: 10.1109/Tnano.2014.2344437  0.362
2013 Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X, Guinea F, Avouris P, Xia F. Damping pathways of mid-infrared plasmons in graphene nanostructures Nature Photonics. 7: 394-399. DOI: 10.1038/Nphoton.2013.57  0.338
2012 Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A  0.327
2012 Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/Nl300904K  0.378
2012 Yan H, Li X, Chandra B, Tulevski G, Wu Y, Freitag M, Zhu W, Avouris P, Xia F. Tunable infrared plasmonic devices using graphene/insulator stacks. Nature Nanotechnology. 7: 330-4. PMID 22522668 DOI: 10.1038/Nnano.2012.59  0.374
2012 Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/Nn205106Z  0.389
2012 Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P. Quantum behavior of graphene transistors near the scaling limit. Nano Letters. 12: 1417-23. PMID 22316333 DOI: 10.1021/Nl204088B  0.383
2012 Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325  0.317
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428  0.342
2011 Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/Nature09979  0.378
2011 Xia F, Perebeinos V, Lin YM, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology. 6: 179-84. PMID 21297624 DOI: 10.1038/Nnano.2011.6  0.347
2011 Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934  0.354
2010 Wu Y, Ye P, Mirza IO, Arce GR, Prather DW. Experimental demonstration of an optical-sectioning compressive sensing microscope (CSM). Optics Express. 18: 24565-78. PMID 21164803 DOI: 10.1364/Oe.18.024565  0.419
2010 Ye PD, Gu JJ, Wu YQ, Xu M, Xuan Y, Shen T, Neal AT. ALD high-k as a common gate stack solution for nano-electronics Ecs Transactions. 28: 51-68. DOI: 10.1149/1.3372563  0.549
2010 Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671  0.345
2010 Wang W, Deng J, Hwang JCM, Xuan Y, Wu Y, Ye PD. Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 96: 072102. DOI: 10.1063/1.3315870  0.524
2007 Ye P, Lu ZL, Du BM, Chen Z, Wu YF, Yu XH, Zhao YC. Effect of xuezhikang on cardiovascular events and mortality in elderly patients with a history of myocardial infarction: a subgroup analysis of elderly subjects from the China Coronary Secondary Prevention Study. Journal of the American Geriatrics Society. 55: 1015-22. PMID 17608873 DOI: 10.1111/j.1532-5415.2007.01230.x  0.404
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