| Year |
Citation |
Score |
| 2019 |
Gudlavalleti RH, Saman B, Mays R, Lingalugari M, Heller E, Chandy J, Jain F. Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations International Journal of High Speed Electronics and Systems. 28: 1940026. DOI: 10.1142/S0129156419400263 |
0.436 |
|
| 2019 |
Salama H, Saman B, Gudlavalleti RH, Chan P, Mays R, Khan B, Heller E, Chandy J, Jain F. Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling International Journal of High Speed Electronics and Systems. 28: 1940025. DOI: 10.1142/S0129156419400251 |
0.422 |
|
| 2019 |
Jain F, Saman B, Gudlavalleti RH, Mays R, Chandy J, Heller E. Multi-Bit SRAMs, Registers, and Logic Using Quantum Well Channel SWS-FETs for Low-Power, High-Speed Computing International Journal of High Speed Electronics and Systems. 28: 1940024. DOI: 10.1142/S012915641940024X |
0.404 |
|
| 2019 |
Jain F, Gudlavalleti RH, Mays R, Saman B, Chan P, Chandy J, Lingalugari M, Heller E. Integration of Quantum Dot Gate (QDG) in SWS-FETs for Multi-Bit Logic and QD-NVRAMs for Distributed In-Memory Computing International Journal of High Speed Electronics and Systems. 28: 1940018. DOI: 10.1142/S0129156419400184 |
0.432 |
|
| 2019 |
Karmakar S, Gogna M, Jain F. Fabrication of QDNVM-based comparator Micro & Nano Letters. 14: 947-951. DOI: 10.1049/Mnl.2018.5450 |
0.754 |
|
| 2019 |
Karmakar S, Chandy JA, Jain FC. Eight-bit ADC using non-volatile flash memory Iet Circuits, Devices & Systems. 13: 98-102. DOI: 10.1049/Iet-Cds.2018.5198 |
0.571 |
|
| 2018 |
Salama H, Saman B, Heller E, Gudlavalleti RH, Mays R, Jain F. Twin Drain Quantum Well/Quantum Dot Channel Spatial Wave-Function Switched (SWS) FETs for Multi-Valued Logic and Compact DRAMs International Journal of High Speed Electronics and Systems. 27: 1840024. DOI: 10.1142/S0129156418400244 |
0.469 |
|
| 2018 |
Jain F, Saman B, Gudlavalleti RH, Chandy J, Heller E. Multi-State 2-Bit CMOS Logic Using n- and p- Quantum Well Channel Spatial Wavefunction Switched (SWS) FETs International Journal of High Speed Electronics and Systems. 27: 1840020. DOI: 10.1142/S0129156418400207 |
0.451 |
|
| 2018 |
Saman B, Heller E, Jain FC. A Novel One SWS-FET Transistor for AND/OR Logic Gate International Journal of High Speed Electronics and Systems. 27: 1840019. DOI: 10.1142/S0129156418400190 |
0.474 |
|
| 2018 |
Lingalugari M, Heller E, Parthasarathy B, Chandy J, Jain F. Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing International Journal of High Speed Electronics and Systems. 27: 1840006. DOI: 10.1142/S0129156418400062 |
0.482 |
|
| 2018 |
Kondo J, Mirdha P, Parthasarathy B, Chan P, Saman B, Jain F, Heller E. Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon International Journal of High Speed Electronics and Systems. 27: 1840005. DOI: 10.1142/S0129156418400050 |
0.496 |
|
| 2018 |
Saman B, Kondo J, Chandy J, Jain FC. Circuits and Simulation of Quaternary SRAM Using Quantum Dot Channel Field Effect Transistors (QDC-FETs) International Journal of High Speed Electronics and Systems. 27: 1840004. DOI: 10.1142/S0129156418400049 |
0.483 |
|
| 2018 |
Parthasarathy B, Mirdha P, Kondo J, Jain F. Dual Quantum Dot Superlattice International Journal of High Speed Electronics and Systems. 27: 1840003. DOI: 10.1142/S0129156418400037 |
0.462 |
|
| 2018 |
Khan JA, Heller E, Jain F. Characterization of Ge Quantum Dot Optical Waveguides for High Speed Optical Modulators International Journal of High Speed Electronics and Systems. 27: 1840001. DOI: 10.1142/S0129156418400013 |
0.371 |
|
| 2018 |
Lingalugari M, Chan P-, Heller EK, Chandy J, Jain FC. QD floating gate NVRAM using QD channel for faster erasing Electronics Letters. 54: 36-37. DOI: 10.1049/El.2017.2931 |
0.482 |
|
| 2017 |
Kondo J, Lingalugari M, Mirdha P, Chan P, Heller E, Jain F. Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs) International Journal of High Speed Electronics and Systems. 26: 1740015. DOI: 10.1142/S0129156417400158 |
0.48 |
|
| 2017 |
Lingalugari M, Chan P, Chandy J, Heller E, Jain F. Multi-Bit NVRAMs Using Quantum Dot Gate Access Channel International Journal of High Speed Electronics and Systems. 26: 1740014. DOI: 10.1142/S0129156417400146 |
0.451 |
|
| 2017 |
Saman B, Gogna P, Hasaneen E, Chandy J, Heller E, Jain FC. Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation International Journal of High Speed Electronics and Systems. 26: 1740009. DOI: 10.1142/S0129156417400092 |
0.457 |
|
| 2017 |
Velampati RSR, Hasaneen E, Heller EK, Jain FC. Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 25: 1774-1781. DOI: 10.1109/Tvlsi.2016.2645795 |
0.5 |
|
| 2017 |
Mirdha P, Parthasarathy B, Kondo J, Chan P, Heller E, Jain FC. An Investigation of Quantum Dot Super Lattice Use
in Nonvolatile Memory and Transistors Journal of Electronic Materials. 47: 1371-1382. DOI: 10.1007/S11664-017-5951-5 |
0.456 |
|
| 2016 |
Kujofsa T, Cheruku S, Sidoti D, Xhurxhi S, Obst F, Correa JP, Bertoli B, Rago PB, Suarez EN, Jain FC, Ayers JE. Apparent critical layer thickness in ZnSe/GaAs (001) heterostructures and the role of finite experimental resolution Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959155 |
0.314 |
|
| 2016 |
Karmakar S, Jain FC. Design of Three bit ADC and DAC Using Spatial Wave-function Switched SWSFETs Silicon. 1-11. DOI: 10.1007/S12633-015-9371-Y |
0.593 |
|
| 2016 |
Karmakar S, Gogna M, Jain FC. Application of quantum dot gate nonvolatile memory (QDNVM) in image segmentation Signal, Image and Video Processing. 10: 551-558. DOI: 10.1007/S11760-015-0773-5 |
0.721 |
|
| 2016 |
Jain F, Lingalugari M, Kondo J, Mirdha P, Suarez E, Chandy J, Heller E. Quantum Dot Channel (QDC) FETs with Wraparound II–VI Gate Insulators: Numerical Simulations Journal of Electronic Materials. 45: 5663-5670. DOI: 10.1007/S11664-016-4812-Y |
0.51 |
|
| 2015 |
Croce RA, Vaddiraju S, Legassey A, Papadimitrakopoulos F, Jain FC. Mathematical Model and Fabrication of Multi-Layer Electrochemical Glucose Sensors International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500123 |
0.783 |
|
| 2015 |
Saman B, Mirdha P, Lingalugari M, Gogna P, Jain FC, Hasaneen ES, Heller E. Logic Gates Design and Simulation Using Spatial Wavefunction Switched (SWS) FETs International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500081 |
0.45 |
|
| 2015 |
Lingalugari M, Chan PY, Heller E, Jain F. Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500032 |
0.506 |
|
| 2015 |
Mirdha P, Lingalugari M, Heller EK, Chandy JA, Jain FC. Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415200116 |
0.429 |
|
| 2015 |
Croce RA, Vaddiraju S, Legassey A, Zhu K, Islam SK, Papadimitrakopoulos F, Jain FC. A highly miniaturized low-power CMOS-based pH monitoring platform Ieee Sensors Journal. 15: 895-901. DOI: 10.1109/Jsen.2014.2356851 |
0.748 |
|
| 2015 |
Karmakar S, Jain FC. Ternary static random access memory using quantum dot gate field-effect transistor Micro and Nano Letters. 10: 621-624. DOI: 10.1049/Mnl.2015.0200 |
0.616 |
|
| 2015 |
Karmakar S, Gogna M, Suarez E, Jain FC. Three-state quantum dot gate field-effect transistor in silicon-on-insulator Iet Circuits, Devices and Systems. 9: 111-118. DOI: 10.1049/Iet-Cds.2014.0202 |
0.764 |
|
| 2015 |
Karmakar S, Jain FC. Circuit Model of Different Quantum Dot Based Field Effect Transistors Silicon. 7: 15-26. DOI: 10.1007/S12633-014-9252-9 |
0.642 |
|
| 2015 |
Kondo J, Lingalugari M, Chan PY, Heller E, Jain F. Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells Journal of Electronic Materials. 44: 3188-3193. DOI: 10.1007/S11664-015-3895-1 |
0.499 |
|
| 2015 |
Jain F, Chan PY, Lingalugari M, Kondo J, Suarez E, Gogna P, Chandy J, Heller E. Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic Journal of Electronic Materials. 44: 3108-3115. DOI: 10.1007/S11664-015-3827-0 |
0.512 |
|
| 2015 |
Suarez E, Chan PY, Gogna M, Ayers JE, Heller E, Jain F. Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators Journal of Electronic Materials. 44: 3064-3068. DOI: 10.1007/S11664-015-3769-6 |
0.714 |
|
| 2014 |
Suarez E, Chan PY, Gogna M, Ayers JE, Heller E, Jain F. ZNS/ZNMGSETE/ZNS II-VI energy barrier for INGAAS substrates International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S012915641450013X |
0.721 |
|
| 2014 |
Croce RA, Vaddiraju S, Legassey A, Papadimitrakopoulos F, Jain FC. A low-power miniaturized microelectronic system for continuous glucose monitoring International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500104 |
0.782 |
|
| 2014 |
Karmakar S, Chandy JA, Jain FC. Implementation of membership function using spatial wave-function switched FETs International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500074 |
0.585 |
|
| 2014 |
Lingalugari M, Chandy J, Jain F, Hasaneen E, Heller E. Compact Low-Power Analog-to-Digital Converters using Multi-State Spatial Wavefunction-Switched (SWS) FETs International Journal of High Speed Electronics and Systems. 23: 1450005. DOI: 10.1142/S0129156414500050 |
0.47 |
|
| 2014 |
Gogna P, Lingalugari M, Chandy J, Heller E, Jain F. Fast Digital to Analog Convertor using Spatial Wave Switched FETs International Journal of High Speed Electronics and Systems. 23: 1450002. DOI: 10.1142/S0129156414500025 |
0.375 |
|
| 2014 |
Chan PY, Lingalugari M, Heller E, Jain F. An investigation on Quantum Dot Superlattice (QDSL) diode International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414200043 |
0.444 |
|
| 2014 |
Karmakar S, Chandy JA, Jain FC. Unipolar Logic Gates Based on Spatial Wave-Function Switched FETs Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. DOI: 10.1109/Tvlsi.2014.2320912 |
0.609 |
|
| 2014 |
Karmakar S, Chandy JA, Jain FC. Design of four-state inverter based on spatial wave-function switched FETs International Journal of Electronics Letters. 3: 225-236. DOI: 10.1080/00207217.2014.917718 |
0.559 |
|
| 2014 |
Karmakar S, Jain FC. Ternary universal logic gates using quantum dot gate field effect transistors Indian Journal of Physics. 88: 1275-1283. DOI: 10.1007/s12648-014-0583-6 |
0.604 |
|
| 2014 |
Karmakar S, Chandy JA, Jain FC. Implementation of six bit ADC and DAC using quantum dot gate non-volatile memory Journal of Signal Processing Systems. 75: 209-216. DOI: 10.1007/s11265-013-0789-4 |
0.348 |
|
| 2013 |
Croce RA, Vaddiraju S, Kondo J, Wang Y, Zuo L, Zhu K, Islam SK, Burgess DJ, Papadimitrakopoulos F, Jain FC. A miniaturized transcutaneous system for continuous glucose monitoring. Biomedical Microdevices. 15: 151-60. PMID 22992979 DOI: 10.1007/S10544-012-9708-X |
0.783 |
|
| 2013 |
Karmakar S, Chandy JA, Jain FC. Design of ternary logic combinational circuits based on quantum dot gate FETs Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 21: 793-806. DOI: 10.1109/Tvlsi.2012.2198248 |
0.609 |
|
| 2013 |
Croce RA, Vaddiraju S, Legassey A, Islam SK, Papadimitrakopoulos F, Jain FC. Low-power signal processing methodologies for implantable biosensing platforms 2013 Ieee Signal Processing in Medicine and Biology Symposium, Spmb 2013. DOI: 10.1109/SPMB.2013.6736771 |
0.775 |
|
| 2013 |
Croce RA, Vaddiraju S, Legassey A, Wang Y, Burgess D, Papadimitrakopoulos F, Jain FC. A low power miniaturized CMOS-based continuous glucose monitoring system 2013 Ieee International Conference On Body Sensor Networks, Bsn 2013. DOI: 10.1109/BSN.2013.6575469 |
0.787 |
|
| 2013 |
Kujofsa T, Antony A, Xhurxhi S, Obst F, Sidoti D, Bertoli B, Cheruku S, Correa JP, Rago PB, Suarez EN, Jain FC, Ayers JE. Design of S-graded buffer layers for metamorphic ZnSy Se 1-y /GaAs (001) semiconductor devices Journal of Electronic Materials. 42: 3408-3420. DOI: 10.1007/S11664-013-2771-0 |
0.349 |
|
| 2013 |
Gogna P, Suarez E, Lingalugari M, Chandy J, Heller E, Hasaneen ES, Jain FC. Ge-ZnSSe spatial wavefunction switched (SWS) FETs to implement multibit srams and novel quaternary logic Journal of Electronic Materials. 42: 3337-3343. DOI: 10.1007/S11664-013-2762-1 |
0.343 |
|
| 2013 |
Jain F, Chan P, Suarez E, Lingalugari M, Kondo J, Gogna P, Miller B, Chandy J, Heller E. Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers Journal of Electronic Materials. 42: 3191-3202. DOI: 10.1007/S11664-013-2758-X |
0.504 |
|
| 2013 |
Suarez E, Chan PY, Lingalugari M, Ayers JE, Heller E, Jain F. Quantum dot gate three-state and nonvolatile memory field-effect transistors using a ZnS/ZnMgS/ZnS heteroepitaxial stack as a tunnel insulator on silicon-on-insulator substrates Journal of Electronic Materials. 42: 3275-3282. DOI: 10.1007/S11664-013-2724-7 |
0.511 |
|
| 2013 |
Khan J, Lingalugari M, Al-Amoody F, Jain F. Voltage-Dependent Charge Storage in Cladded Zn 0.56 Cd 0.44 Se Quantum Dot MOS Capacitors for Multibit Memory Applications Journal of Electronic Materials. 42: 3267-3274. DOI: 10.1007/S11664-013-2713-X |
0.422 |
|
| 2013 |
Lingalugari M, Baskar K, Chan PY, Dufilie P, Suarez E, Chandy J, Heller E, Jain FC. Novel multistate quantum dot gate FETs Using SiO2 and lattice-matched ZnS-ZnMgS-ZnS as gate insulators Journal of Electronic Materials. 42: 3156-3163. DOI: 10.1007/S11664-013-2696-7 |
0.468 |
|
| 2013 |
Kujofsa T, Cheruku S, Yu W, Outlaw B, Xhurxhi S, Obst F, Sidoti D, Bertoli B, Rago PB, Suarez EN, Jain FC, Ayers JE. Relaxation dynamics and threading dislocations in ZnSe and ZnS y Se1-y /GaAs (001) heterostructures Journal of Electronic Materials. 42: 2764-2770. DOI: 10.1007/S11664-013-2668-Y |
0.362 |
|
| 2013 |
Chan PY, Gogna M, Suarez E, Al-Amoody F, Karmakar S, Miller BI, Heller EK, Ayers JE, Jain FC. Fabrication and simulation of an indium gallium arsenide quantum-dot-gate field-effect transistor (QDG-FET) with ZnMgS as a tunnel gate insulator Journal of Electronic Materials. 42: 3259-3266. DOI: 10.1007/S11664-013-2651-7 |
0.764 |
|
| 2012 |
Croce RA, Vaddiraju S, Papadimitrakopoulos F, Jain FC. Theoretical analysis of the performance of glucose sensors with layer-by-layer assembled outer membranes. Sensors (Basel, Switzerland). 12: 13402-16. PMID 23202001 DOI: 10.3390/S121013402 |
0.766 |
|
| 2012 |
Karmakar S, Jain FC. Future Semiconductor Devices for Multi-Valued Logic Circuit Design Materials Sciences and Applications. 3: 807-814. DOI: 10.4236/Msa.2012.311117 |
0.652 |
|
| 2012 |
Karmakar S, Chandy JA, Jain FC. Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET) 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410970 |
0.307 |
|
| 2012 |
Gogna P, Lingalugari M, Chandy J, Jain FC, Heller E, Hasaneen ES. Efficient multi-bit SRAMs using spatial wavefunction switched (SWS)-FETs 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410969 |
0.322 |
|
| 2012 |
Karmakar S, Gogna M, Jain FC. Improved device structure of quantum dot gate FET to obtain more stable intermediate state Electronics Letters. 48: 1556-1557. DOI: 10.1049/El.2012.3726 |
0.757 |
|
| 2012 |
Karmakar S, Suarez E, Gogna M, Jain F. ZnS-ZnMgS-ZnS lattice-matched gate insulator as an alternative for silicon dioxide on silicon in quantum dot gate FETs (QDGFETs) Journal of Electronic Materials. 41: 2663-2670. DOI: 10.1007/S11664-012-2220-5 |
0.761 |
|
| 2012 |
Kujofsa T, Yu W, Cheruku S, Outlaw B, Xhurxhi S, Obst F, Sidoti D, Bertoli B, Rago PB, Suarez EN, Jain FC, Ayers JE. Plastic flow and dislocation compensation in ZnS ySe 1-y/GaAs (001) heterostructures Journal of Electronic Materials. 41: 2993-3000. DOI: 10.1007/S11664-012-2195-2 |
0.331 |
|
| 2012 |
Chan PY, Suarez E, Gogna M, Miller BI, Heller EK, Ayers JE, Jain FC. Indium gallium arsenide quantum dot gate field-effect transistor using II-VI tunnel insulators showing three-state behavior Journal of Electronic Materials. 41: 2810-2815. DOI: 10.1007/S11664-012-2176-5 |
0.718 |
|
| 2012 |
Jain F, Karmakar S, Chan PY, Suarez E, Gogna M, Chandy J, Heller E. Quantum dot channel (QDC) field-effect transistors (FETs) using II-VI barrier layers Journal of Electronic Materials. 41: 2775-2784. DOI: 10.1007/S11664-012-2161-Z |
0.76 |
|
| 2012 |
Karmakar S, Chandy JA, Gogna M, Jain FC. Fabrication and circuit modeling of NMOS inverter based on quantum dot gate field-effect transistors Journal of Electronic Materials. 41: 2184-2192. DOI: 10.1007/S11664-012-2116-4 |
0.774 |
|
| 2011 |
Vaddiraju S, Legassey A, Wang Y, Qiang L, Burgess DJ, Jain F, Papadimitrakopoulos F. Design and fabrication of a high-performance electrochemical glucose sensor. Journal of Diabetes Science and Technology. 5: 1044-51. PMID 22027296 DOI: 10.1177/193229681100500504 |
0.359 |
|
| 2011 |
Karmakar S, Chandy JA, Jain FC. Application of 25 nm quantum dot gate FETs to the design of ADC and DAC circuits International Journal of High Speed Electronics and Systems. 20: 653-668. DOI: 10.1142/S0129156411006945 |
0.653 |
|
| 2011 |
Jain FC, Chandy J, Miller B, Hasaneen ES, Heller E. Spatial Wavefunction-Switched (SWS)-FET: A novel device to process multiple bits simultaneously with sub-picosecond delays International Journal of High Speed Electronics and Systems. 20: 641-652. DOI: 10.1142/S0129156411006933 |
0.479 |
|
| 2011 |
Croce RA, Vaddiraju S, Chan PY, Seyta R, Jain FC. Label-free protein detection based on vertically aligned carbon nanotube gated field-effect transistors Sensors and Actuators, B: Chemical. 160: 154-160. DOI: 10.1016/J.Snb.2011.07.026 |
0.782 |
|
| 2011 |
Xhurxhi S, Obst F, Sidoti D, Bertoli B, Kujofsa T, Cheruku S, Correa JP, Rago PB, Suarez EN, Jain FC, Ayers JE. S-graded buffer layers for lattice-mismatched heteroepitaxial devices Journal of Electronic Materials. 40: 2348-2354. DOI: 10.1007/S11664-011-1781-Z |
0.347 |
|
| 2011 |
Gogna M, Suarez E, Chan PY, Al-Amoody F, Karmakar S, Jain F. Nonvolatile silicon memory using GeO x -cladded Ge quantum dots self-assembled on SiO 2 and lattice-matched II-VI tunnel insulator Journal of Electronic Materials. 40: 1769-1774. DOI: 10.1007/S11664-011-1685-Y |
0.766 |
|
| 2011 |
Karmakar S, Suarez E, Jain FC. Three-state quantum dot gate FETs using ZnS-ZnMgS lattice-matched gate insulator on silicon Journal of Electronic Materials. 40: 1749-1756. DOI: 10.1007/S11664-011-1676-Z |
0.61 |
|
| 2011 |
Jain FC, Miller B, Suarez E, Chan PY, Karmakar S, Al-Amoody F, Gogna M, Chandy J, Heller E. Spatial wavefunction-switched (SWS) InGaAs FETs with II-VI gate insulators Journal of Electronic Materials. 40: 1717-1726. DOI: 10.1007/S11664-011-1667-0 |
0.763 |
|
| 2011 |
Al-Amoody F, Suarez E, Rodriguez A, Heller E, Huang W, Jain F. Core–Shell ZnxCd1−xSe/ZnyCd1−ySe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications Journal of Electronic Materials. 40: 1699-1705. DOI: 10.1007/S11664-011-1663-4 |
0.498 |
|
| 2011 |
Chan PY, Gogna M, Suarez E, Karmakar S, Al-Amoody F, Miller BI, Jain FC. Nonvolatile memory effect in indium gallium arsenide-based metal-oxide-semiconductor devices using II-VI tunnel insulators Journal of Electronic Materials. 40: 1685-1688. DOI: 10.1007/S11664-011-1655-4 |
0.766 |
|
| 2010 |
Vaddiraju S, Burgess DJ, Tomazos I, Jain FC, Papadimitrakopoulos F. Technologies for continuous glucose monitoring: current problems and future promises. Journal of Diabetes Science and Technology. 4: 1540-62. PMID 21129353 DOI: 10.1177/193229681000400632 |
0.344 |
|
| 2010 |
Chan PY, Gogna M, Suarez E, Al-Amoody F, Karmakar S, Miller BI, Ayers JE, Jain FC. Indium gallium arsenide based non-volatile memory devices with site-specific self-assembled germanium quantum dot gate Materials Research Society Symposium Proceedings. 1250: 35-40. DOI: 10.1557/Proc-1250-G01-05 |
0.751 |
|
| 2010 |
Huang W, Jain FC. Temperature insensitivity of the threshold current density in exciton-dominated wide energy gap quantum wire lasers Optical Engineering. 49. DOI: 10.1117/1.3430578 |
0.396 |
|
| 2010 |
Bertoli B, Sidoti D, Xhurxhi S, Kujofsa T, Cheruku S, Correa JP, Rago PB, Suarez EN, Jain FC, Ayers JE. Equilibrium strain and dislocation density in exponentially graded Si 1-x Gex /Si (001) Journal of Applied Physics. 108. DOI: 10.1063/1.3514565 |
0.312 |
|
| 2010 |
Sidoti D, Xhurxhi S, Kujofsa T, Cheruku S, Reed J, Bertoli B, Rago PB, Suarez EN, Jain FC, Ayers JE. Critical layer thickness in exponentially graded heteroepitaxial layers Journal of Electronic Materials. 39: 1140-1145. DOI: 10.1007/S11664-010-1165-9 |
0.335 |
|
| 2010 |
Karmakar S, Chandy JA, Jain FC. 3-state quantum dot gate FETs in designing high sampling rate ADCs Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 17-20. |
0.369 |
|
| 2009 |
Vaddiraju S, Singh H, Burgess DJ, Jain FC, Papadimitrakopoulos F. Enhanced glucose sensor linearity using poly(vinyl alcohol) hydrogels. Journal of Diabetes Science and Technology. 3: 863-74. PMID 20144336 DOI: 10.1177/193229680900300434 |
0.327 |
|
| 2009 |
Vaddiraju S, Burgess DJ, Jain FC, Papadimitrakopoulos F. The role of H2O2 outer diffusion on the performance of implantable glucose sensors Biosensors and Bioelectronics. 24: 1557-1562. PMID 18823767 DOI: 10.1016/J.Bios.2008.08.015 |
0.319 |
|
| 2009 |
Wang S, Dai J, Hasaneen E, Wang L, Jain F. Utilizing quantum dot transistors with programmable threshold voltages for low-power mobile computing Acm Journal On Emerging Technologies in Computing Systems. 5: 1-19. DOI: 10.1145/1568485.1568489 |
0.434 |
|
| 2009 |
Wang S, Wang L, Jain F. Towards achieving reliable and high-performance nanocomputing via dynamic redundancy allocation Acm Journal On Emerging Technologies in Computing Systems. 5: 1-21. DOI: 10.1145/1482613.1482615 |
0.302 |
|
| 2009 |
Karmakar S, Suresh AP, Chandy JA, Jain FC. Design of ADCs and DACs using 3-state quantum DOT gate FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378203 |
0.364 |
|
| 2009 |
Jain F, Karmakar S, Alamoody F, Suarez E, Gogna M, Chan PY, Chandy J, Miller B, Heller E. 3-State behavior in quantum dot gate FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378013 |
0.677 |
|
| 2009 |
Jain FC, Suarez E, Gogna M, Alamoody F, Butkiewicus D, Hohner R, Liaskas T, Karmakar S, Chan PY, Miller B, Chandy J, Heller E. Novel quantum dot gate FETs and nonvolatile memories using lattice-matched ii-vi gate insulators Journal of Electronic Materials. 38: 1574-1578. DOI: 10.1007/S11664-009-0755-X |
0.766 |
|
| 2008 |
Jain FC, Gogna M, Alamoody F, Karmakar S, Suarez E, Chandy J, Heller E. Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A05-04 |
0.763 |
|
| 2008 |
Chandy JA, Jain FC. Multiple valued logic using 3-state quantum dot gate FETs Proceedings of the International Symposium On Multiple-Valued Logic. 186-190. DOI: 10.1109/ISMVL.2008.34 |
0.336 |
|
| 2008 |
Ocampo JF, Suarez E, Jain FC, Ayers JE. Overshoot graded layers for mismatched heteroepitaxial devices Journal of Electronic Materials. 37: 1035-1043. DOI: 10.1007/S11664-008-0476-6 |
0.325 |
|
| 2007 |
Tipnis R, Vaddiraju S, Jain F, Burgess DJ, Papadimitrakopoulos F. Layer-by-layer assembled semipermeable membrane for amperometric glucose sensors. Journal of Diabetes Science and Technology. 1: 193-200. PMID 19888406 DOI: 10.1177/193229680700100209 |
0.344 |
|
| 2007 |
Jain FC, Heller E, Karmakar S, Chandy J. Device and circuit modeling using novel 3-state quantum dot gate FETs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422254 |
0.389 |
|
| 2007 |
Velampati RS, Jain FC. A novel nonvolatile memory using SiOx-cladded Si quantum dots 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 1: 160-161. |
0.335 |
|
| 2006 |
Rodriguez A, Li R, Vitti L, Yarlagadda P, Papadimitrakopoulos F, Huang W, Ayers J, Jain F. ZnCdSe-ZnSe Cladded Quantum Dots Using Photoassisted Microwave Plasma Enhanced Metalorganic Chemical Vapor Deposition for Lasers and Electroluminescent Phosphors Nanophotonics. DOI: 10.1364/Nano.2006.Nthc3 |
0.406 |
|
| 2005 |
Li P, Rodriguez A, Yarlagadda B, Velampati R, Ayers JE, Jain FC. Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices Solid-State Electronics. 49: 2002-2005. DOI: 10.1016/J.Sse.2005.09.009 |
0.302 |
|
| 2004 |
Huang W, Jain FC. Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications Optical Engineering. 43: 667-672. DOI: 10.1117/1.1645845 |
0.401 |
|
| 2004 |
Hasaneen ES, Jain FC. Modeling of nonvolatile quantum dot gate structures operating at millimeter wave frequencies for memory applications International Journal of Infrared and Millimeter Waves. 25: 89-106. DOI: 10.1023/B:Ijim.0000012765.25378.Cb |
0.457 |
|
| 2004 |
Hasaneen E, Heller E, Bansal R, Huang W, Jain F. Modeling of nonvolatile floating gate quantum dot memory Solid-State Electronics. 48: 2055-2059. DOI: 10.1016/J.Sse.2004.05.073 |
0.474 |
|
| 2002 |
Zhang XG, Rodriguez A, Li P, Jain FC, Ayers JE. Patterned heteroepitaxial processing applied to ZnSe and ZnS 0.02Se 0.98 on GaAs (001) Journal of Applied Physics. 91: 3912-3917. DOI: 10.1063/1.1446227 |
0.306 |
|
| 2001 |
Xu M, Huang W, Jain F. InGaAs-InP Quantum Wire Stark Effect Modulators: Effect of Wire Width in the Optimization of Changes in Excitonic Absorption and Index of Refraction Mrs Proceedings. 667. DOI: 10.1557/Proc-667-G6.9 |
0.413 |
|
| 2001 |
Islam SK, Srinivasan V, Jain FC. An analytical three-region two-dimensional model for SiGe MOSFETs operating at millimeter wave frequencies International Journal of Infrared and Millimeter Waves. 22: 1813-1824. DOI: 10.1023/A:1015027701819 |
0.303 |
|
| 2001 |
Huang W, Xu M, Jain F. 1.55 μm InGaAs-InP Quantum Wire Optical Modulators: Optimization of Wire Width to Maximize Absorption and Index of Refraction Changes Due to Excitonic Transitions International Journal of Infrared and Millimeter Waves. 22: 1009-1018. DOI: 10.1023/A:1014948004045 |
0.413 |
|
| 2001 |
Heller E, Jain F. Performance of 30 nm Gate Length InAlAs-InGaAs MODFETs: Comparison of Conventional and Asymmetric Coupled-Well Transport Channel Configurations International Journal of Infrared and Millimeter Waves. 22: 853-861. DOI: 10.1023/A:1014910229814 |
0.438 |
|
| 2001 |
Islam SK, Jain FC. Design and analysis of InGaN-GaN Modulation-Doped Field-Effect Transistors (MODFETs) for 90 GHZ operations International Journal of Infrared and Millimeter Waves. 22: 1495-1501. |
0.345 |
|
| 2000 |
Huang W, Jain F. Enhanced optical gain in InGaN–AlGaN quantum wire and quantum dot lasers due to excitonic transitions Journal of Applied Physics. 87: 7354-7359. DOI: 10.1063/1.372993 |
0.415 |
|
| 2000 |
Zhang XG, Rodriguez A, Wang X, Li P, Jain FC, Ayers JE. Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing Applied Physics Letters. 77: 2524-2526. DOI: 10.1063/1.1319178 |
0.301 |
|
| 2000 |
Islam SK, Jain FC. Self-aligned SiGe MOS-gate FET with modulation-doped quantum wire channel for millimeter wave application International Journal of Infrared and Millimeter Waves. 21: 1169-1179. DOI: 10.1023/A:1026487714262 |
0.485 |
|
| 2000 |
Jain F, Cheung S, Huang W. Acceptance of Wider Oblique Angle of Incidence in Fabry-Perot Optical Filter/Modulator Structures via Index Compensation in InGaAs-GaAs (980 nm) and InGaAsP-InP (1.55 μm) Multiple Quantum Well Cavities International Journal of Infrared and Millimeter Waves. 21: 759-769. DOI: 10.1023/A:1026416811341 |
0.408 |
|
| 2000 |
Wang H, Huang W, Jain F. Surface Acoustic Wave Induced Birefringence in In0.21Ga0.79As-GaAs Multiple Quantum Wells for Optical Modulation ≈1000 nm under Normal Incidence International Journal of Infrared and Millimeter Waves. 21: 527-546. DOI: 10.1023/A:1006675502255 |
0.357 |
|
| 2000 |
Heller EK, Jain FC. Simulation of one-dimensional ring quantum interference transistors using the time-dependent finite-difference beam propagation method Journal of Applied Physics. 87: 8080-8087. |
0.338 |
|
| 1999 |
Jain F, Huang W. Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe–ZnMgSSe and InGaN–AlGaN pseudomorphic quantum dots Journal of Applied Physics. 85: 2706-2712. DOI: 10.1063/1.369588 |
0.4 |
|
| 1999 |
Heller EK, Islam SK, Zhao G, Jain FC. Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels Solid-State Electronics. 43: 901-914. DOI: 10.1016/S0038-1101(99)00003-9 |
0.43 |
|
| 1998 |
Heller EK, Islam SK, Zhao G, Jain FC. Analysis of quantum-wire MODFETs employing coupled well channels Proceedings of Spie - the International Society For Optical Engineering. 3384: 90-102. DOI: 10.1117/12.317669 |
0.452 |
|
| 1998 |
Heller EK, Islam SK, Zhao G, Jain FC. High performance (fT∼500GHz) In0.52Al0.48As/ In0.53Ga0.47As/InP quantum wire modfets employing asymmetric coupled-well channels International Journal of Infrared and Millimeter Waves. 19: 1047-1058. DOI: 10.1023/A:1022639129427 |
0.416 |
|
| 1998 |
Islam SK, Jain FC. 10 Tera Hertz operation in one-dimensional quantum interference transistor (1-D QUIT) devices International Journal of Infrared and Millimeter Waves. 19: 1649-1659. DOI: 10.1023/A:1021763126173 |
0.434 |
|
| 1998 |
Islam SK, Jain FC, Zhao G, Heller E. Design and analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for over 60 GHz operation International Journal of Infrared and Millimeter Waves. 19: 1633-1647. DOI: 10.1023/A:1021711009335 |
0.44 |
|
| 1997 |
Jain F, Srinivasan S, Heller E, LaComb R, Gokhale M, Huang W. Monolithic integration of red, blue, and green lasers for smart projection displays Journal of the Society For Information Display. 5: 241. DOI: 10.1889/1.1985158 |
0.34 |
|
| 1997 |
Huang W, Jain F. Reduced threshold current density due to excitonic optical gain in the presence of dislocations and surface states in tensile strained ZnCdSe quantum wire lasers Journal of Applied Physics. 81: 6781-6785. DOI: 10.1063/1.365221 |
0.35 |
|
| 1997 |
Cheung SK, Wang H, Huang W, Jain F. Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators Journal of Applied Physics. 81: 497-501. DOI: 10.1063/1.364125 |
0.349 |
|
| 1997 |
Zhang XG, Kalisetty S, Robinson J, Zhao G, Parent DW, Ayers JE, Jain FC. Structural properties of ZnSySe1 - Y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy Journal of Crystal Growth. 174: 726-732. DOI: 10.1016/S0022-0248(97)00065-1 |
0.311 |
|
| 1997 |
Zhang XG, Kalisetty S, Robinson J, Zhao G, Parent DW, Ayers JE, Jain FC. Structural properties of ZnSySe1-y/ZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy Journal of Electronic Materials. 26: 697-704. DOI: 10.1007/S11664-997-0218-1 |
0.3 |
|
| 1996 |
Lacomb R, Jain F. A self-consistent model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors Solid-State Electronics. 39: 1621-1627. DOI: 10.1016/0038-1101(96)00084-6 |
0.367 |
|
| 1996 |
Islam SK, Jain FC. Analysis of quantum wire high electron mobility transistor (HEMT) structure Solid-State Electronics. 39: 615-620. DOI: 10.1016/0038-1101(95)00178-6 |
0.451 |
|
| 1995 |
Huang W, Jain FC. Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue-green lasers: Prediction of low threshold under tensile strain Applied Physics Letters. 1596. DOI: 10.1063/1.113863 |
0.358 |
|
| 1995 |
Islam SK, Jain FC. Terahertz quantum interference transistors (QUIT) using one-dimensional MODFET-type electron waveguides Superlattices and Microstructures. 17: 221-224. DOI: 10.1006/spmi.1995.1040 |
0.325 |
|
| 1994 |
Jain F, Huang W, LaComb R, Chung C, Drake G. Optical modulators using quantum confined Stark effect in ZnSe based multiple quantum well structures Journal of Crystal Growth. 138: 703-708. DOI: 10.1016/0022-0248(94)90894-X |
0.41 |
|
| 1993 |
Jain F, Gokhale M, Islam S, Chung C. Analysis of self-aligned MOSFETs with modulation-doped SiGe channels Solid-State Electronics. 36: 1613-1618. DOI: 10.1016/0038-1101(93)90034-N |
0.406 |
|
| 1993 |
Jain F, Chung C, LaComb R, Gokhale M. Resonant tunneling transistor lasers: A new approach to obtain multi-state switching and bistable operation International Journal of Infrared and Millimeter Waves. 14: 1311-1322. DOI: 10.1007/Bf02146259 |
0.312 |
|
| 1993 |
Islam SK, Jain FC. Modeling of parabolic quantum well wire channels for modulation-doped field-effect transistors Superlattices and Microstructures. 14: 15. DOI: 10.1006/spmi.1993.1097 |
0.301 |
|
| 1992 |
Chung C, Jain F, Drake G. Prospects of fabricating blue/green lasers using ZnSe based metal-insulator-semiconductor (MIS) heterostructures Journal of Crystal Growth. 117: 1062-1067. DOI: 10.1016/0022-0248(92)90914-5 |
0.404 |
|
| 1991 |
Jain FC, Drake GW, Chung C, Bhattacharjee KK, Cheung SK. Two-dimensional spatial light modulators using polarization-sensitive multiple-quantum-well light valve Proceedings of Spie. 1564: 714-722. DOI: 10.1117/12.49756 |
0.374 |
|
| 1990 |
Kalonia KS, Jain FC. An analytical two-dimensional model for CMOS devices at room and cryogenic temperatures Solid State Electronics. 33: 947-951. DOI: 10.1016/0038-1101(90)90077-R |
0.345 |
|
| 1990 |
Donkor E, Jain FC. A perturbation technique to model InGaAs/InP and GaAs FETs for millimeter-wave integrated circuits International Journal of Infrared and Millimeter Waves. 11: 869-877. DOI: 10.1007/Bf01010139 |
0.326 |
|
| 1990 |
Bhattacharjee KK, Jain FC. Multiple quantum well acousto-optic and electro-optic modulators Ultrasonics Symposium Proceedings. 2: 621-624. |
0.301 |
|
| 1986 |
Jain FC, Rosato JJ, Kalonia KS, Agarwala VS. FORMATION OF AN ACTIVE ELECTRONIC BARRIER AT Al/SEMICONDUCTOR INTERFACES: A NOVEL APPROACH IN CORROSION PREVENTION Corrosion. 42: 700-707. DOI: 10.5006/1.3583044 |
0.304 |
|
| 1986 |
Kazi K, Jain FC. Modal analysis of IncGaAsP-InP, GaAs/AlGaAs-GaAs, and InGaAsP/AlGaAs-GaAs MIS heterostructure lasers International Journal of Infrared and Millimeter Waves. 7: 891-907. DOI: 10.1007/Bf01013035 |
0.313 |
|
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