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Shanthi Iyer - Publications

Affiliations: 
Electrical Engineering North Carolina Agricultural and Technical State University 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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59 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Devkota S, Kuchoor HR, Dawkins KD, Pokharel R, Parakh M, Li J, Iyer S. Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors. Nanotechnology. PMID 36893449 DOI: 10.1088/1361-6528/acc2c6  0.381
2022 Yuan L, Pokharel R, Devkota S, Kuchoor HR, Dawkins KD, Lee MC, Huang Y, Yarotski D, Iyer S, Prasankumar RP. Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization. Nanotechnology. PMID 35772308 DOI: 10.1088/1361-6528/ac7d61  0.34
2022 Parakh M, Ramaswamy P, Devkota S, Kuchoor H, Dawkins K, Iyer S. Passivation efficacy study of AlOdielectric on self-catalyzed molecular beam epitaxially grown GaAsSbnanowires. Nanotechnology. 33. PMID 35468592 DOI: 10.1088/1361-6528/ac69f8  0.38
2021 Ramaswamy P, Devkota S, Pokharel R, Nalamati S, Stevie F, Jones K, Reynolds L, Iyer S. A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM. Scientific Reports. 11: 8329. PMID 33859310 DOI: 10.1038/s41598-021-87825-4  0.379
2021 Johnson S, Pokharel R, Lowe M, Kuchoor H, Nalamati S, Davis K, Rathnayake H, Iyer S. Study of patterned GaAsSbN nanowires using sigmoidal model. Scientific Reports. 11: 4651. PMID 33633245 DOI: 10.1038/s41598-021-83973-9  0.32
2020 Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector. Nanotechnology. 31: 505203. PMID 33021209 DOI: 10.1088/1361-6528/Abb506  0.539
2020 Kumar R, Liu Y, Li J, Iyer S, Reynolds L. Doping Dependent Magnetic Behavior in MBE Grown GaAsSb Nanowires. Scientific Reports. 10: 8995. PMID 32488009 DOI: 10.1038/S41598-020-65805-4  0.444
2020 Parakh M, Johnson S, Pokharel R, Ramaswamy P, Nalamati S, Li J, Iyer S. Corrigendum: Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in-situ annealing in ultra-high vacuum (2020 Nanotechnology 31 025205). Nanotechnology. PMID 32187593 DOI: 10.1088/1361-6528/Ab80Fc  0.487
2020 Pokharel R, Ramaswamy P, Devkota S, Parakh M, Dawkins K, Penn A, Cabral M, Reynolds L, Iyer S. Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application Acs Applied Electronic Materials. 2: 2730-2738. DOI: 10.1021/acsaelm.0c00450  0.325
2019 Parakh M, Johnson S, Pokharel R, Ramaswamy P, Nalamati S, Li J, Iyer S. Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in-situ annealing in ultra-high vacuum. Nanotechnology. PMID 31553959 DOI: 10.1088/1361-6528/Ab47Aa  0.487
2019 Deshmukh P, Li J, Nalamati S, Sharma M, Iyer S. Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications. Nanotechnology. PMID 30865932 DOI: 10.1088/1361-6528/Ab0F7C  0.491
2018 Sharma M, Ahmad E, Dev D, Li J, Reynolds CL, Liu Y, Iyer S. Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in-situ annealing. Nanotechnology. PMID 30212376 DOI: 10.1088/1361-6528/Aae148  0.542
2018 Deshmukh P, Sharma M, Nalamati S, Reynolds CL, Liu Y, Iyer S. Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1–x Sb x (x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 μm Semiconductor Science and Technology. 33: 125007. DOI: 10.1088/1361-6641/Aae7B8  0.521
2017 Ahmad E, Karim MR, Hafiz SB, Reynolds CL, Liu Y, Iyer S. A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range. Scientific Reports. 7: 10111. PMID 28860507 DOI: 10.1038/S41598-017-09280-4  0.448
2017 Sharma M, Deshmukh P, Kasanaboina P, Reynolds CL, Liu Y, Iyer S. Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy Semiconductor Science and Technology. 32: 125003. DOI: 10.1088/1361-6641/Aa90B0  0.562
2017 Ahmad E, Ojha SK, Kasanaboina PK, Reynolds CL, Liu Y, Iyer S. Bandgap tuning in GaAs1−xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy Semiconductor Science and Technology. 32: 35002. DOI: 10.1088/1361-6641/32/3/035002  0.513
2017 Sharma M, Karim MR, Kasanaboina P, Li J, Iyer S. Pitch-Induced Bandgap Tuning in Self-Catalyzed Growth of Patterned GaAsSb Axial and GaAs/GaAsSb Core–Shell Nanowires Using Molecular Beam Epitaxy Crystal Growth & Design. 17: 730-737. DOI: 10.1021/Acs.Cgd.6B01577  0.466
2016 Kasanaboina P, Sharma M, Deshmukh P, Reynolds CL, Liu Y, Iyer S. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires. Nanoscale Research Letters. 11: 47. PMID 26831685 DOI: 10.1186/S11671-016-1265-4  0.542
2016 Ojha SK, Kasanaboina PK, Lewis Reynolds C, Rawdanowicz TA, Liu Y, White RM, Iyer S. Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4943600  0.483
2016 Ahmad E, Kasanaboina PK, Karim MR, Sharma M, Reynolds CL, Liu Y, Iyer S. Te incorporation in GaAs1−xSbx nanowires and p-i-n axial structure Semiconductor Science and Technology. 31: 125001. DOI: 10.1088/0268-1242/31/12/125001  0.541
2016 Kasanaboina PK, Ojha SK, Sami SU, Lewis Reynolds C, Liu Y, Iyer S. Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core–Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 μm Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-015-4316-1  0.559
2015 Kasanaboina PK, Ojha SK, Sami SU, Reynolds L, Liu Y, Iyer S. Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications Proceedings of Spie - the International Society For Optical Engineering. 9373. DOI: 10.1117/12.2080572  0.549
2015 Kasanaboina PK, Ojha SK, Sami SU, Reynolds CL, Liu Y, Iyer S. Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105036  0.511
2015 Nguyen N, McCall B, Alston R, Collis W, Iyer S. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105004  0.39
2015 Kasanaboina PK, Ahmad E, Li J, Reynolds CL, Liu Y, Iyer S. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4930887  0.534
2014 Alston R, Iyer S, Bradley T, Lewis J, Cunningham G, Forsythe E. Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications Proceedings of Spie - the International Society For Optical Engineering. 9005. DOI: 10.1117/12.2041028  0.45
2013 Bradley T, Iyer S, Alston R, Collis W, Lewis J, Cunningham G, Forsythe E. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2013277  0.396
2012 Patra NC, Bharatan S, Li J, Iyer S. Annealing studies of heteroepitaxial InSbN on GaAs grown by molecular beam epitaxy for long-wavelength infrared detectors Journal of Applied Physics. 112. DOI: 10.1063/1.4759321  0.701
2012 Patra NC, Bharatan S, Li J, Tilton M, Iyer S. Molecular beam epitaxial growth and characterization of InSb 1 - XN x on GaAs for long wavelength infrared applications Journal of Applied Physics. 111. DOI: 10.1063/1.3702453  0.7
2011 Bharatan S, Iyer S, Li J, Rawdanowicz TA, Reynolds L. Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555368  0.514
2011 Bowen A, Li J, Lewis J, Sivaramakrishnan K, Alford TL, Iyer S. The properties of radio frequency sputtered transparent and conducting ZnO:F films on polyethylene naphthalate substrate Thin Solid Films. 519: 1809-1816. DOI: 10.1016/J.Tsf.2010.10.019  0.366
2009 Wu L, Iyer S, Li J, Gibson K, Reppert J, Rao AM, Matney K, Lewis J. Study of low temperature growth of III-V alloys for transparent layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2375-2383. DOI: 10.1116/1.3253605  0.505
2009 Sivaramakrishnan K, Ngo AT, Iyer S, Alford TL. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide Journal of Applied Physics. 105. DOI: 10.1063/1.3100043  0.363
2008 Bhagat SK, Han H, Zoo Y, Lewis J, Grego S, Lee K, Iyer S, Alford TL. Effects of deposition parameters on the electrical and mechanical properties of indium tin oxide films on polyethylene napthalate substrates deposited by radio frequency magnetron sputtering Thin Solid Films. 516: 4064-4069. DOI: 10.1016/J.Tsf.2007.12.146  0.352
2007 Bhagat S, Zoo Y, Han H, Lewis J, Grego S, Lee K, Iyer S, Alford TL. Mechanical properties of indium tin oxide on polyethylene napthalate substrate Materials Research Society Symposium Proceedings. 1012: 401-406. DOI: 10.1557/Proc-1012-Y12-21  0.371
2007 Nunna K, Iyer S, Wu L, Bharatan S, Li J, Bajaj KK, Wei X, Senger RT. Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures Journal of Vacuum Science & Technology B. 25: 1113-1116. DOI: 10.1116/1.2720860  0.507
2007 Nunna K, Iyer S, Wu L, Li J, Bharatan S, Wei X, Senger RT, Bajaj KK. Nitrogen incorporation and optical studies of GaAsSbN/GaAs single quantum well heterostructures Journal of Applied Physics. 102: 53106. DOI: 10.1063/1.2777448  0.502
2007 Bharatan S, Iyer S, Nunna K, Collis WJ, Matney K, Reppert J, Rao AM, Kent PRC. The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbNGaAs grown by molecular beam epitaxy Journal of Applied Physics. 102. DOI: 10.1063/1.2753681  0.588
2007 Iyer S, Wu L, Li J, Potoczny S, Matney K, Kent PRC. Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells Journal of Applied Physics. 101: 113508. DOI: 10.1063/1.2734081  0.524
2005 Wu L, Iyer S, Nunna K, Bharatan S, Li J, Collis WJ. Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs Mrs Proceedings. 872. DOI: 10.1557/Proc-872-J18.34  0.544
2005 Bharatan S, Iyer S, Matney K, Collis WJ, Nunna K, Li J, Wu L, McGuire K, McNeil LE. Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee10-36  0.538
2005 Li J, Iyer S, Bharatan S, Wu L, Nunna K, Collis W, Bajaj KK, Matney K. Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells Journal of Applied Physics. 98: 13703. DOI: 10.1063/1.1931032  0.513
2005 Wu L, Iyer S, Nunna K, Li J, Bharatan S, Collis W, Matney K. MBE growth and properties of GaAsSbN/GaAs single quantum wells Journal of Crystal Growth. 279: 293-302. DOI: 10.1016/J.Jcrysgro.2005.02.033  0.532
2003 Wu L, Iyer S, Nunna K, Li J, Bharatan S, Collis W, Matney K. MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells Mrs Proceedings. 799. DOI: 10.1557/Proc-799-Z1.9  0.325
2002 Rawdanowicz TA, Iyer S, Mitchel WC, Saxler A, Elhamri S. Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy Journal of Applied Physics. 92: 296-301. DOI: 10.1063/1.1476086  0.532
2000 Iyer S, Mulugeta S, Collis W, Venkatraman S, Bajaj KK, Coli G. Photoreflectance studies of Te-doped GaSb at the E0+Δ0 transition Journal of Applied Physics. 87: 2336-2339. DOI: 10.1063/1.372184  0.405
1997 Iyer S, Mulugeta S, Li J, Mangalam B, Venkatraman S, Bajaj KK. Photoreflectance Study of MBE Grown Te-doped GaSb at the E 0 +Δ 0 Transition Mrs Proceedings. 484: 57. DOI: 10.1557/Proc-484-57  0.361
1997 Iyer S, Li J, Chowdhury-Nagle S, Bajaj KK. InAsSb/InTlSb superlattice: a proposed heterostructure for long wavelength infrared detectors Journal of Electronic Materials. 26: 347-349. DOI: 10.1007/S11664-997-0099-3  0.391
1996 Iyer S, Chowdhury-Nagle S, Li J, Bajaj KK. Theoretical Study of InAsSb/InTlSB Superlattice for the Far Infrared Detector Mrs Proceedings. 421: 395. DOI: 10.1557/Proc-421-395  0.406
1996 Iyer S, Small L, Hegde SM, Bajaj KK, Abul‐Fadl A. Erratum: ‘‘Low temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy’’ [J. Appl. Phys. 77, 5902 (1995)] Journal of Applied Physics. 79: 1185-1185. DOI: 10.1063/1.362713  0.333
1996 Iyer S, Parakkat R, Mangalam B, Patnaik B, Falvo M, Parikh N. A study of the ion implantation damage and annealing behavior in GaSb Journal of Electronic Materials. 25: 119-124. DOI: 10.1007/Bf02666184  0.32
1995 Iyer S, Small L, Hegde SM, Bajaj KK, Abul-Fadl A. Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy Journal of Applied Physics. 77: 5902-5909. DOI: 10.1063/1.359170  0.417
1994 Iyer S, Hegde S, Bajaj KK, Abul-Fadl A, Mitchel W. Low Temperature Pl Characterization of Lpee Grown GaSb and GaInAsSb Epilayers Mrs Proceedings. 299. DOI: 10.1557/Proc-299-41  0.443
1993 Iyer S, Hegde S, Abul-Fadl A, Bajaj KK, Mitchel W. Erratum: Growth and photoluminescence of GaSb and Ga 1-x In x As y Sb 1-y grown on GaSb substrates by liquid-phase electroepitaxy [Phys. Rev. B 47, 1329 (1993)] Physical Review B. 48: 8521. PMID 10021592 DOI: 10.1103/Physrevb.48.8521.2  0.345
1993 Iyer S, Hegde S, Abul-Fadl A, Bajaj KK, Mitchel W. Growth and photoluminescence of GaSb and Ga1-xInxAsySb1-y grown on GaSb substrates by liquid-phase electroepitaxy Physical Review B. 47: 1329-1339. PMID 10006143 DOI: 10.1103/Physrevb.47.1329  0.476
1993 Iyer S, Hegde S, Bajaj KK, Abul‐Fadl A, Mitchel W. Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100)GaSb Journal of Applied Physics. 73: 3958-3961. DOI: 10.1063/1.352859  0.405
1989 Chyi JI, Biswas D, Iyer SV, Kumar NS, Morkoç H, Bean R, Zanio K, Lee HY, Chen H. Molecular beam epitaxial growth and characterization of InSb on Si Applied Physics Letters. 54: 1016-1018. DOI: 10.1063/1.100784  0.44
1984 Iyer S, Stefanakos EK, Abul-Fadl A, Collis WJ. Current controlled liquid phase epitaxial growth and characterization of InGaAsP Journal of Crystal Growth. 70: 162-168. DOI: 10.1016/0022-0248(84)90263-X  0.453
1984 Iyer S, Stefanakos EK, Abul-Fadl A, Collis WJ. Diffusion coefficient and differential mobility of As in In for LPE and current controlled LPE Journal of Crystal Growth. 67: 337-342. DOI: 10.1016/0022-0248(84)90193-3  0.393
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