| Year |
Citation |
Score |
| 2021 |
Wang X, Fan H, Muneshwar T, Cadien K, Luo J. Balancing the corrosion resistance and through-plane electrical conductivity of Cr coating via oxygen plasma treatment Journal of Materials Science & Technology. 61: 75-84. DOI: 10.1016/J.Jmst.2020.06.012 |
0.314 |
|
| 2020 |
Rafie Borujeny E, Sendetskyi O, Fleischauer MD, Cadien KC. Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition. Acs Applied Materials & Interfaces. 12: 44225-44237. PMID 32865966 DOI: 10.1021/Acsami.0C08477 |
0.438 |
|
| 2019 |
Muneshwar T, Barlage D, Cadien K. Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization Journal of Vacuum Science and Technology. 37: 30601. DOI: 10.1116/1.5091944 |
0.435 |
|
| 2018 |
Wang XZ, Luo H, Muneshwar T, Fan HQ, Cadien K, Luo JL. ZrNO Coating-Improved Corrosion Resistance for the Anodic Dissolution Induced by Cathodic Transient Potential. Acs Applied Materials & Interfaces. PMID 30418733 DOI: 10.1021/Acsami.8B13149 |
0.329 |
|
| 2018 |
Shen M, Muneshwar TP, Cadien KC, Tsui YY, Barlage DW. ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature Ieee Transactions On Electron Devices. 65: 4513-4519. DOI: 10.1109/Ted.2018.2866598 |
0.416 |
|
| 2018 |
Muneshwar T, Cadien K. Surface reaction kinetics in atomic layer deposition: An analytical model and experiments Journal of Applied Physics. 124: 95302. DOI: 10.1063/1.5044456 |
0.387 |
|
| 2018 |
Liu J, Miao M, Jiang K, Khan F, Goswami A, McGee R, Li Z, Nguyen L, Hu Z, Lee J, Cadien K, Thundat T. Sustained electron tunneling at unbiased metal-insulator-semiconductor triboelectric contacts Nano Energy. 48: 320-326. DOI: 10.1016/J.Nanoen.2018.03.068 |
0.372 |
|
| 2018 |
Wang X, Muneshwar TP, Fan H, Cadien K, Luo J. Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition Journal of Power Sources. 397: 32-36. DOI: 10.1016/J.Jpowsour.2018.07.009 |
0.336 |
|
| 2018 |
Muneshwar T, Cadien K. Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation Applied Surface Science. 435: 367-376. DOI: 10.1016/J.Apsusc.2017.11.104 |
0.399 |
|
| 2018 |
Motamedi P, Bosnick K, Cadien K, Hogan JD. In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition Advanced Materials Interfaces. 5: 1800957. DOI: 10.1002/Admi.201800957 |
0.383 |
|
| 2017 |
Cao B, He X, Sorge J, Lalany A, Ahadi K, Afshar A, Olsen BC, Hauger TC, Mobarok MH, Li P, Cadien KC, Brett MJ, Luber EJ, Buriak JM. Understanding the Effects of a High Surface Area Nanostructured ITO Electrode on Organic Solar Cell Performance. Acs Applied Materials & Interfaces. PMID 29022714 DOI: 10.1021/Acsami.7B10610 |
0.364 |
|
| 2017 |
Motamedi P, Bosnick K, Cui K, Cadien KC, Hogan J. Growth and characterization of metastable hexagonal nickel thin films via plasma-enhanced atomic layer deposition. Acs Applied Materials & Interfaces. PMID 28671453 DOI: 10.1021/Acsami.7B05571 |
0.454 |
|
| 2017 |
Bosnick K, Motamedi P, Patrie T, Cadien K. Conformal Carbon Nanotube Coatings for Ceramic Composite Structures Mrs Advances. 2: 1499-1503. DOI: 10.1557/Adv.2017.51 |
0.388 |
|
| 2017 |
Shen M, Afshar A, Tsui YY, Cadien KC, Barlage DW. Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition Ieee Transactions On Nanotechnology. 16: 135-139. DOI: 10.1109/Tnano.2016.2638447 |
0.453 |
|
| 2017 |
Rafie Borujeny E, Miao M, Pirayesh H, Xu Z, Cadien K. An investigation of the deposition of ceria on silica by quartz crystal microbalance: Observations on the effect of many body interactions Colloids and Surfaces a: Physicochemical and Engineering Aspects. 522: 207-217. DOI: 10.1016/J.Colsurfa.2017.02.081 |
0.328 |
|
| 2017 |
Li Z, Ahadi K, Jiang K, Ahvazi B, Li P, Anyia AO, Cadien K, Thundat T. Freestanding hierarchical porous carbon film derived from hybrid nanocellulose for high-power supercapacitors Nano Research. 10: 1847-1860. DOI: 10.1007/S12274-017-1573-8 |
0.363 |
|
| 2016 |
Shoute G, Afshar A, Muneshwar T, Cadien K, Barlage D. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current. Nature Communications. 7: 10632. PMID 26842997 DOI: 10.1038/Ncomms10632 |
0.34 |
|
| 2016 |
Shen M, Muneshwar TP, Cadien K, Tsui YY, Barlage D. Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition Mrs Advances. 1: 3421-3427. DOI: 10.1557/Adv.2016.357 |
0.428 |
|
| 2016 |
Djokić SS, Antić Ž, Djokić NS, Cadien K, Thundat T. Galvanic Processes on Silicon Surfaces in Cu(II) Alkaline Fluoride-Free Solutions Journal of the Electrochemical Society. 163. DOI: 10.1149/2.0561613Jes |
0.335 |
|
| 2016 |
Muneshwar T, Shoute G, Barlage D, Cadien K. Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition Journal of Vacuum Science and Technology. 34: 50605. DOI: 10.1116/1.4961885 |
0.412 |
|
| 2016 |
Rezazadeh VG, Bothe KM, Afshar A, Cadien KC, Barlage DW. Defect Characterization of PEALD High-k ZrO 2 Films Fabricated on III–V Materials Ieee Transactions On Semiconductor Manufacturing. 29: 355-362. DOI: 10.1109/Tsm.2016.2601304 |
0.415 |
|
| 2016 |
Ma AM, Shen M, Afshar A, Tsui YY, Cadien KC, Barlage DW. Interfacial contact effects in top gated zinc oxide thin film transistors grown by atomic layer deposition Ieee Transactions On Electron Devices. 63: 3540-3546. DOI: 10.1109/Ted.2016.2586418 |
0.439 |
|
| 2016 |
Muneshwar T, Cadien K. AxBAxB… pulsed atomic layer deposition: Numerical growth model and experiments Journal of Applied Physics. 119: 85306. DOI: 10.1063/1.4942439 |
0.4 |
|
| 2016 |
Ahadi K, Cadien K. Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics Rsc Advances. 6: 16301-16307. DOI: 10.1039/C5Ra26860E |
0.413 |
|
| 2015 |
Djokić SS, Cadien K. Galvanic Deposition of Silver on Silicon Surfaces from Fluoride Free Aqueous Solutions Ecs Electrochemistry Letters. 4. DOI: 10.1149/2.0051506Eel |
0.406 |
|
| 2015 |
Muneshwar T, Cadien K. Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth Journal of Vacuum Science and Technology. 33: 60603. DOI: 10.1116/1.4926382 |
0.425 |
|
| 2015 |
Muneshwar T, Cadien K. Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma Journal of Vacuum Science and Technology. 33: 31502. DOI: 10.1116/1.4915122 |
0.443 |
|
| 2015 |
Motamedi P, Dalili N, Cadien K. A route to low temperature growth of single crystal GaN on sapphire Journal of Materials Chemistry C. 3: 7428-7436. DOI: 10.1039/C5Tc01556A |
0.413 |
|
| 2015 |
Motamedi P, Cadien K. Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition Rsc Advances. 5: 57865-57874. DOI: 10.1039/C5Ra07709E |
0.456 |
|
| 2015 |
Motamedi P, Cadien K. Structural and optical characterization of low-temperature ALD crystalline AlN Journal of Crystal Growth. 421: 45-52. DOI: 10.1016/J.Jcrysgro.2015.04.009 |
0.389 |
|
| 2015 |
Dawkins K, Rudyk B, Xu Z, Cadien K. The pH-dependant attachment of ceria nanoparticles to silica using surface analytical techniques Applied Surface Science. 345: 249-255. DOI: 10.1016/J.Apsusc.2015.03.170 |
0.326 |
|
| 2015 |
Muneshwar T, Cadien K. Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry Applied Surface Science. 328: 344-348. DOI: 10.1016/J.Apsusc.2014.12.044 |
0.429 |
|
| 2014 |
Shen M, Afshar A, Gupta M, Shoute G, Cadien K, Tsui YY, Barlage D. Electrical characteristics of TiW/ZnO schottky contact with ALD and PLD Prehospital and Disaster Medicine. 1635. DOI: 10.1557/Opl.2014.49 |
0.437 |
|
| 2014 |
Voon KJ, Bothe KM, Motamedi P, Cadien KC, Barlage DW. Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/34/345104 |
0.373 |
|
| 2014 |
Motamedi P, Cadien K. XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition Applied Surface Science. 315: 104-109. DOI: 10.1016/J.Apsusc.2014.07.105 |
0.456 |
|
| 2014 |
Benlamri M, Bothe KM, Ma AM, Shoute G, Afshar A, Sharma H, Mohammadpour A, Gupta M, Cadien KC, Tsui YY, Shankar K, Barlage DW. High-mobility solution-processed zinc oxide thin films on silicon nitride Physica Status Solidi - Rapid Research Letters. 8: 871-875. DOI: 10.1002/Pssr.201409155 |
0.385 |
|
| 2013 |
Jim SR, Foroughi-Abari A, Krause KM, Li P, Kupsta M, Taschuk MT, Cadien KC, Brett MJ. Ultrathin-layer chromatography nanostructures modified by atomic layer deposition. Journal of Chromatography. A. 1299: 118-25. PMID 23768654 DOI: 10.1016/J.Chroma.2013.05.050 |
0.468 |
|
| 2013 |
Djokic SS, Nolan L, Cadien K, Thundat T. Electroless deposition of copper and silver on niobium surfaces Ecs Electrochemistry Letters. 2: D16-D18. DOI: 10.1149/2.007303Eel |
0.702 |
|
| 2013 |
Bothe KM, Von Hauff PA, Afshar A, Foroughi-Abari A, Cadien KC, Barlage DW. Electrical comparison of hfO2 and zrO2 gate dielectrics on gaN Ieee Transactions On Electron Devices. 60: 4119-4124. DOI: 10.1109/Ted.2013.2283802 |
0.417 |
|
| 2013 |
Afshar A, Cadien KC. Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach Applied Physics Letters. 103. DOI: 10.1063/1.4852655 |
0.384 |
|
| 2013 |
Ma AM, Gupta M, Afshar A, Shoute G, Tsui YY, Cadien KC, Barlage DW. Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition Applied Physics Letters. 103. DOI: 10.1063/1.4836955 |
0.406 |
|
| 2013 |
Von Hauff P, Afshar A, Foroughi-Abari A, Bothe K, Cadien K, Barlage D. ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition Applied Physics Letters. 102. DOI: 10.1063/1.4812475 |
0.364 |
|
| 2013 |
Nolan LM, Cadien KC. Chemically enhanced synergistic wear: A copper chemical mechanical polishing case study Wear. 307: 155-163. DOI: 10.1016/J.Wear.2013.08.001 |
0.696 |
|
| 2012 |
Foroughi-Abari A, Cadien KC. In situ spectroscopic ellipsometry study of plasma-enhanced ALD of Al 2O 3 on chromium substrates Journal of the Electrochemical Society. 159. DOI: 10.1149/2.035202Jes |
0.433 |
|
| 2012 |
Foroughi-Abari A, Xu C, Cadien KC. The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films Thin Solid Films. 520: 1762-1767. DOI: 10.1016/J.Tsf.2011.08.063 |
0.399 |
|
| 2011 |
Maraghechi P, Cadien K, Elezzabi AY. A novel nanofabrication damascene lift-off technique Ieee Transactions On Nanotechnology. 10: 822-826. DOI: 10.1109/Tnano.2010.2081374 |
0.351 |
|
| 2011 |
Foroughi-Abari A, Cadien KC. Growth, structure and properties of sputtered niobium oxide thin films Thin Solid Films. 519: 3068-3073. DOI: 10.1016/J.Tsf.2010.12.036 |
0.376 |
|
| 2005 |
Akonko SB, Li DY, Ziomek-Moroz M, Hawk JA, Miller A, Cadien K. Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical–mechanical planarization application Wear. 259: 1299-1307. DOI: 10.1016/J.Wear.2005.02.018 |
0.399 |
|
| 2003 |
Ziomek-Moroz M, Miller A, Hawk JA, Cadien K, Li D. An overview of corrosion–wear interaction for planarizing metallic thin films Wear. 255: 869-874. DOI: 10.1016/S0043-1648(03)00225-4 |
0.387 |
|
| 1986 |
Sugiura J, Lu WJ, Cadien KC, Steckl AJ. REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 349-354. DOI: 10.1116/1.583329 |
0.397 |
|
| 1986 |
Cadien KC, Sivaram S, Reintsema CD. Dry etching of TiSi2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 739-743. DOI: 10.1116/1.573822 |
0.379 |
|
| 1984 |
Cadien KC, Losee DL. METHOD FOR ELIMINATING HILLOCKS IN INTEGRATED-CIRCUIT METALLIZATIONS Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 82-83. DOI: 10.1116/1.582921 |
0.314 |
|
| 1984 |
Cadien KC, Muddle BC, Greene JE. Phase transformations in ion-mixed metastable (GaSb)1-x(Ge2)x semiconducting alloys Journal of Applied Physics. 55: 4177-4186. DOI: 10.1063/1.333036 |
0.32 |
|
| 1983 |
Cadien KC, Greene JE. Crystal growth and controlled doping of epitaxial Ge films on (100)GaAs by sputter deposition Journal of Crystal Growth. 61: 15-22. DOI: 10.1016/0022-0248(83)90274-9 |
0.414 |
|
| 1982 |
Cadien KC, Ray MA, Shin SM, Rigsbee JM, Barnett SA, Greene JE. Summary Abstract: Ion mixing during film deposition: Growth of metastable semiconducting and metallic alloys Journal of Vacuum Science and Technology. 20: 370-371. DOI: 10.1116/1.571468 |
0.399 |
|
| 1982 |
Bajor G, Cadien KC, Ray MA, Greene JE, Vijayakumar PS. Growth of high quality epitaxial Ge films on (100)Si by sputter deposition Applied Physics Letters. 40: 696-698. DOI: 10.1063/1.93239 |
0.447 |
|
| 1982 |
Greene JE, Barnett SA, Cadien KC, Ray MA. Growth of single crystal GaAs and metastable (GaSb)1-xGexAlloys by sputter deposition: Ion-surface interaction effects Journal of Crystal Growth. 56: 389-401. DOI: 10.1016/0022-0248(82)90458-4 |
0.449 |
|
| 1981 |
Cadien K, Ray M, Shin S, Rigsbee J, Barnett S, Greene J. Ion Mixing During Film Deposition: Growth of Metastable Semiconducting and Metallic Alloys Mrs Proceedings. 7. DOI: 10.1557/Proc-7-93 |
0.45 |
|
| 1981 |
Cadien KC, Eltoukhy AH, Greene JE. Growth of single-crystal metastable semiconducting (GaSb)1-xGex films Applied Physics Letters. 38: 773-775. DOI: 10.1063/1.92158 |
0.414 |
|
| 1981 |
Cadien K, Eltoukhy A, Greene J. Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films Vacuum. 31: 253-258. DOI: 10.1016/S0042-207X(81)80177-7 |
0.388 |
|
| 1979 |
Cadien KC, Zilko JL, Eltoukhy AH, Greene JE. GROWTH OF SINGLE-CRYSTAL METASTABLE InSb//1// minus //xBi//x AND (GaSb)//1// minus //xGe//x SEMICONDUCTING FILMS Journal of Vacuum Science &Amp; Technology. 17: 441-444. DOI: 10.1116/1.570477 |
0.329 |
|
| Show low-probability matches. |