| Year |
Citation |
Score |
| 2019 |
Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, et al. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale. PMID 30821309 DOI: 10.1039/C9Nr00713J |
0.341 |
|
| 2016 |
Lacroix C, Lambert-Milot S, Desjardins P, Masut RA, Ménard D. Surface induced magnetization reversal of MnP nanoclusters embedded in GaP Journal of Applied Physics. 119. DOI: 10.1063/1.4943365 |
0.772 |
|
| 2016 |
Pougoum F, Martinu L, Desjardins P, Klemberg-Sapieha J, Gaudet S, Savoie S, Schulz R. Effect of high-energy ball-milling on the characteristics of Fe3Al-based HVOF coatings containing boride and nitride phases Wear. 358: 97-108. DOI: 10.1016/J.Wear.2016.04.001 |
0.646 |
|
| 2015 |
Jacobberger RM, Kiraly B, Fortin-Deschenes M, Levesque PL, McElhinny KM, Brady GJ, Rojas Delgado R, Singha Roy S, Mannix A, Lagally MG, Evans PG, Desjardins P, Martel R, Hersam MC, Guisinger NP, et al. Direct oriented growth of armchair graphene nanoribbons on germanium. Nature Communications. 6: 8006. PMID 26258594 DOI: 10.1038/Ncomms9006 |
0.327 |
|
| 2015 |
Jacobberger RM, Levesque PL, Xu F, Wu MY, Choubak S, Desjardins P, Martel R, Arnold MS. Tailoring the growth rate and surface facet for synthesis of high-quality continuous graphene films from CH4 at 750 °c via chemical vapor deposition Journal of Physical Chemistry C. 119: 11516-11523. DOI: 10.1021/Jp5116355 |
0.342 |
|
| 2014 |
Beausoleil A, Desjardins P, Rochefort A. Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 89: 032406. PMID 24730851 DOI: 10.1103/Physreve.89.032406 |
0.752 |
|
| 2014 |
Choubak S, Levesque PL, Gaufres E, Biron M, Desjardins P, Martel R. Graphene CVD: Interplay between growth and etching on morphology and stacking by hydrogen and oxidizing impurities Journal of Physical Chemistry C. 118: 21532-21540. DOI: 10.1021/Jp5070215 |
0.327 |
|
| 2013 |
Turcotte-Tremblay P, Guihard M, Gaudet S, Chicoine M, Lavoie C, Desjardins P, Schiettekatte F. Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4821550 |
0.712 |
|
| 2013 |
Gaudet S, De Keyser K, Lambert-Milot S, Jordan-Sweet J, Detavernier C, Lavoie C, Desjardins P. Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4789984 |
0.758 |
|
| 2013 |
Lacroix C, Lambert-Milot S, Masut RA, Desjardins P, Ménard D. Ferromagnetic resonance measurements of GaP epilayers with embedded MnP nanoclusters grown on GaP(001) Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.024412 |
0.783 |
|
| 2013 |
Fournier-Lupien JH, Mukherjee S, Wirths S, Pippel E, Hayazawa N, Mussler G, Hartmann JM, Desjardins P, Buca D, Moutanabbir O. Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys Applied Physics Letters. 103. DOI: 10.1063/1.4855436 |
0.311 |
|
| 2013 |
Ghafoor N, Johnson LJS, Klenov DO, Demeulemeester J, Desjardins P, Petrov I, Hultman L, Odén M. Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases Apl Materials. 1. DOI: 10.1063/1.4818170 |
0.339 |
|
| 2012 |
Lambert-Milot S, Gaudet S, Lacroix C, Ménard D, Masut RA, Lavoie C, Desjardins P. MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4758132 |
0.787 |
|
| 2012 |
Turcotte S, Beaudry JN, Masut RA, Desjardins P, Bentoumi G, Leonelli R. Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.033304 |
0.319 |
|
| 2011 |
Lévesque A, Desjardins P, Leonelli R, Masut RA. Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.235304 |
0.337 |
|
| 2011 |
Gaudet S, Desjardins P, Lavoie C. The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation Journal of Applied Physics. 110. DOI: 10.1063/1.3662110 |
0.707 |
|
| 2011 |
Bratland KA, Spila T, Cahill DG, Greene JE, Desjardins P. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3556745 |
0.405 |
|
| 2010 |
Zhang Z, Yang B, Zhu Y, Gaudet S, Rossnagel S, Kellock AJ, Ozcan A, Murray C, Desjardins P, Zhang SL, Jordan-Sweet J, Lavoie C. Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films Applied Physics Letters. 97. DOI: 10.1063/1.3529459 |
0.7 |
|
| 2010 |
Gaudet S, Coia C, Desjardins P, Lavoie C. Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance Journal of Applied Physics. 107. DOI: 10.1063/1.3327451 |
0.713 |
|
| 2010 |
Anahory Y, Guihard M, Smeets D, Karmouch R, Schiettekatte F, Vasseur P, Desjardins P, Hu L, Allen LH, Leon-Gutierrez E, Rodriguez-Viejo J. Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors Thermochimica Acta. 510: 126-136. DOI: 10.1016/J.Tca.2010.07.006 |
0.346 |
|
| 2009 |
Lacroix C, Lambert-Milot S, Desjardins P, Masut RA, Ḿnard D. Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters Journal of Applied Physics. 105. DOI: 10.1063/1.3070646 |
0.787 |
|
| 2009 |
Guihard M, Turcotte-Tremblay P, Gaudet S, Coïa C, Roorda S, Desjardins P, Lavoie C, Schiettekatte F. Controlling nickel silicide phase formation by Si implantation damage Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1285-1289. DOI: 10.1016/J.Nimb.2009.01.149 |
0.366 |
|
| 2008 |
Beausoleil A, Desjardins P, Rochefort A. Effects of long jumps, reversible aggregation, and Meyer-Neldel rule on submonolayer epitaxial growth. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 78: 021604. PMID 18850843 DOI: 10.1103/Physreve.78.021604 |
0.756 |
|
| 2008 |
Dion C, Desjardins P, Shtinkov N, Robertson MD, Schiettekatte F, Poole PJ, Raymond S. Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.075338 |
0.356 |
|
| 2008 |
Turcotte S, Beaudry JN, Masut RA, Desjardins P, Bentoumi G, Leonelli R. Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001) Journal of Applied Physics. 104. DOI: 10.1063/1.3000451 |
0.312 |
|
| 2008 |
Lambert-Milot S, Lacroix C, Ḿnard D, Masut RA, Desjardins P, Garcia-Hernandez M, De Andres A. Metal-organic vapor phase epitaxy of crystallographically oriented MnP magnetic nanoclusters embedded in GaP(001) Journal of Applied Physics. 104. DOI: 10.1063/1.2992558 |
0.797 |
|
| 2008 |
Dion C, Desjardins P, Schiettekatte F, Chicoine M, Robertson MD, Shtinkov N, Poole PJ, Wu X, Raymond S. Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation Journal of Applied Physics. 104. DOI: 10.1063/1.2970093 |
0.31 |
|
| 2008 |
Dion C, Desjardins P, Shtinkov N, Schiettekatte F, Poole PJ, Raymond S. Effects of grown-in defects on interdiffusion dynamics in InAsInP (001) quantum dots subjected to rapid thermal annealing Journal of Applied Physics. 103. DOI: 10.1063/1.2905317 |
0.335 |
|
| 2008 |
Bentoumi G, Yaïche Z, Leonelli R, Beaudry JN, Desjardins P, Masut RA. Lowerature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 103. DOI: 10.1063/1.2901141 |
0.39 |
|
| 2008 |
Lacroix C, Lambert-Milot S, Desjardins P, Masut RA, Ḿnard D. Magnetic anisotropy in GaP(001) epilayers containing MnP nanoclusters observed by angle dependent ferromagnetic resonance measurements Journal of Applied Physics. 103. DOI: 10.1063/1.2837600 |
0.786 |
|
| 2008 |
Beaudry JN, Masut RA, Desjardins P. GaAs1-xNx on GaAs(0 0 1): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy Journal of Crystal Growth. 310: 1040-1048. DOI: 10.1016/J.Jcrysgro.2007.12.039 |
0.397 |
|
| 2007 |
Dion C, Desjardins P, Chicoine M, Schiettekatte F, Poole PJ, Raymond S. Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP(001) quantum dots Nanotechnology. 18. DOI: 10.1088/0957-4484/18/1/015404 |
0.312 |
|
| 2007 |
Beaudry JN, Shtinkov N, Masut RA, Desjardins P, Riobóo RJJ. Compositional dependence of the elastic constants of dilute GaAs1-x Nx alloys Journal of Applied Physics. 101. DOI: 10.1063/1.2736340 |
0.33 |
|
| 2006 |
Amassian A, Svec M, Desjardins P, Martinu L. Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 2061-2069. DOI: 10.1116/1.2348642 |
0.355 |
|
| 2006 |
Gaudet S, Detavernier C, Kellock AJ, Desjardins P, Lavoie C. Thin film reaction of transition metals with germanium Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 474-485. DOI: 10.1116/1.2191861 |
0.701 |
|
| 2006 |
Amassian A, Desjardins P, Martinu L. Ion-surface interactions on c-Si(001) at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 45-54. DOI: 10.1116/1.2134709 |
0.346 |
|
| 2006 |
Shtinkov N, Desjardins P, Masut RA, Côté M. Nitrogen incorporation and lattice constant of strained dilute Ga As1-x Nx layers on GaAs (001): An ab initio study Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.035211 |
0.314 |
|
| 2006 |
Dion C, Poole PJ, Raymond S, Desjardins P, Schiettekatte F. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing Applied Physics Letters. 89. DOI: 10.1063/1.2357162 |
0.361 |
|
| 2006 |
Amassian A, Svec M, Desjardins P, Martinu L. Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study Journal of Applied Physics. 100. DOI: 10.1063/1.2337260 |
0.319 |
|
| 2006 |
Gaudet S, Detavernier C, Lavoie C, Desjardins P. Reaction of thin Ni films with Ge: Phase formation and texture Journal of Applied Physics. 100. DOI: 10.1063/1.2219080 |
0.726 |
|
| 2005 |
Lavoie C, Coia C, D'Heurle FM, Detavernier C, Cabrai C, Desjardins P, Kellock AJ. Reactive diffusion in the Ni-Si system: Phase sequence and formation of metal-rich phases Defect and Diffusion Forum. 237: 825-836. DOI: 10.4028/Www.Scientific.Net/Ddf.237-240.825 |
0.441 |
|
| 2005 |
Chicoine M, Beaudoin C, Roorda S, Masut RA, Desjardins P. III-V compliant substrates implemented by nanocavities introduced by ion implantation Journal of Applied Physics. 97: 64309. DOI: 10.1063/1.1863457 |
0.376 |
|
| 2005 |
Bratland KA, Foo YL, Spila T, Seo H, Haasch RT, Desjardins P, Greene JE. Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness Journal of Applied Physics. 97: 044904. DOI: 10.1063/1.1848188 |
0.407 |
|
| 2005 |
Girard-Lauriault PL, Mwale F, Iordanova M, Demers C, Desjardins P, Wertheimer MR. Atmospheric pressure deposition of micropatterned nitrogen-rich plasma-polymer films for tissue engineering Plasma Processes and Polymers. 2: 263-270. DOI: 10.1002/Ppap.200400092 |
0.321 |
|
| 2004 |
Shtinkov N, Turcotte S, Beaudry J, Desjardins P, Masut RA. Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1606-1609. DOI: 10.1116/1.1764814 |
0.302 |
|
| 2004 |
Beaudry J, Masut RA, Desjardins P, Wei P, Chicoine M, Bentoumi G, Leonelli R, Schiettekatte F, Guillon S. Organometallic vapor phase epitaxy of GaAs[sub 1−x]N[sub x] alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 771. DOI: 10.1116/1.1689296 |
0.391 |
|
| 2004 |
Wei P, Chicoine M, Gujrathi S, Schiettekatte F, Beaudry J, Masut RA, Desjardins P. Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 908. DOI: 10.1116/1.1648671 |
0.346 |
|
| 2004 |
Girard JF, Dion C, Desjardins P, Allen CN, Poole PJ, Raymond S. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing Applied Physics Letters. 84: 3382-3384. DOI: 10.1063/1.1715141 |
0.364 |
|
| 2004 |
Amassian A, Vernhes R, Klemberg-Sapieha JE, Desjardins P, Martinu L. Interface engineering during plasma-enhanced chemical vapor deposition of porous/dense SiN1.3 optical multilayers Thin Solid Films. 469: 47-53. DOI: 10.1016/J.Tsf.2004.07.072 |
0.388 |
|
| 2004 |
Amassian A, Desjardins P, Martinu L. Study of TiO2 film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry Thin Solid Films. 447: 40-45. DOI: 10.1016/J.Tsf.2003.09.019 |
0.387 |
|
| 2003 |
Coia C, Desjardins P, Lavoie C, Detavernier C. D043 PHASE IDENTIFICATION AND SEQUENCE CHARACTERIZATION IN Ni-Si THIN FILMS AT LOW TEMPERATURE Powder Diffraction. 18: 175. DOI: 10.1154/1.1706960 |
0.382 |
|
| 2003 |
Bratland KA, Foo YL, Soares JANT, Spila T, Desjardins P, Greene JE. Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy Physical Review B. 67. DOI: 10.1103/Physrevb.67.125322 |
0.381 |
|
| 2003 |
Chicoine M, Roorda S, Masut RA, Desjardins P. Nanocavities in He implanted InP Journal of Applied Physics. 94: 6116-6121. DOI: 10.1063/1.1618354 |
0.332 |
|
| 2003 |
Malikova L, Pollak FH, Masut RA, Desjardins P, Mourokh LG. Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure Journal of Applied Physics. 94: 4995-4998. DOI: 10.1063/1.1609651 |
0.304 |
|
| 2003 |
Bratland KA, Foo YL, Desjardins P, Greene JE. Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)] Applied Physics Letters. 83: 1056-1056. DOI: 10.1063/1.1597894 |
0.311 |
|
| 2003 |
Bratland KA, Foo YL, Desjardins P, Greene JE. Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy Applied Physics Letters. 82: 4247-4249. DOI: 10.1063/1.1578712 |
0.384 |
|
| 2003 |
Foo YL, Bratland KA, Cho B, Desjardins P, Greene JE. Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics Journal of Applied Physics. 93: 3944-3950. DOI: 10.1063/1.1555704 |
0.411 |
|
| 2003 |
Spila T, Desjardins P, D’Arcy-Gall J, Twesten RD, Greene JE. Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors Journal of Applied Physics. 93: 1918-1925. DOI: 10.1063/1.1533833 |
0.412 |
|
| 2003 |
Shtinkov N, Desjardins P, Masut R. Lateral confinement of carriers in ultrathin semiconductor quantum wells Microelectronics Journal. 34: 459-462. DOI: 10.1016/S0026-2692(03)00073-9 |
0.308 |
|
| 2002 |
Shtinkov N, Desjardins P, Masut RA. Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing Physical Review B. 66. DOI: 10.1103/Physrevb.66.195303 |
0.332 |
|
| 2002 |
Park SY, D’Arcy-Gall J, Gall D, Soares JANT, Kim Y, Kim H, Desjardins P, Greene JE, Bishop SG. Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy Journal of Applied Physics. 91: 5716-5727. DOI: 10.1063/1.1465122 |
0.387 |
|
| 2002 |
Spila T, Desjardins P, Vailionis A, Kim H, Taylor N, Cahill DG, Greene JE, Guillon S, Masut RA. Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001) Journal of Applied Physics. 91: 3579-3588. DOI: 10.1063/1.1448680 |
0.42 |
|
| 2002 |
Park SY, D’Arcy-Gall J, Gall D, Kim Y, Desjardins P, Greene JE. C lattice site distributions in metastable Ge1−yCy alloys grown on Ge(001) by molecular-beam epitaxy Journal of Applied Physics. 91: 3644-3652. DOI: 10.1063/1.1448677 |
0.339 |
|
| 2002 |
Foo Y, Bratland K, Cho B, Soares J, Desjardins P, Greene J. C incorporation and segregation during Si1−yCy/Si() gas-source molecular beam epitaxy from Si2H6 and CH3SiH3 Surface Science. 513: 475-484. DOI: 10.1016/S0039-6028(02)01821-6 |
0.341 |
|
| 2001 |
Chun J, Desjardins P, Lavoie C, Petrov I, Cabral C, Greene JE. Interfacial reaction pathways and kinetics during annealing of 111-textured Al/TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 2207-2216. DOI: 10.1116/1.1379800 |
0.403 |
|
| 2001 |
Chun J, Carlsson J, Desjardins P, Bergstrom D, Petrov I, Greene J, Lavoie C, Cabral C, Hultman L. Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers Journal of Vacuum Science and Technology. 19: 182-191. DOI: 10.1116/1.1322648 |
0.411 |
|
| 2001 |
Gall D, Städele M, Järrendahl K, Petrov I, Desjardins P, Haasch RT, Lee T, Greene JE. Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations Physical Review B. 63. DOI: 10.1103/Physrevb.63.125119 |
0.325 |
|
| 2001 |
Kim H, Glass G, Soares JANT, Foo YL, Desjardins P, Greene JE. Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation Applied Physics Letters. 79: 3263-3265. DOI: 10.1063/1.1415420 |
0.424 |
|
| 2001 |
D’Arcy-Gall J, Gall D, Petrov I, Desjardins P, Greene JE. Quantitative C lattice site distributions in epitaxial Ge1−yCy/Ge(001) layers Journal of Applied Physics. 90: 3910-3918. DOI: 10.1063/1.1402137 |
0.314 |
|
| 2001 |
Shin C-, Gall D, Kim Y-, Desjardins P, Petrov I, Greene JE, Odén M, Hultman L. Epitaxial NaCl structure d-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio Journal of Applied Physics. 90: 2879-2885. DOI: 10.1063/1.1391214 |
0.363 |
|
| 2001 |
Chun J, Desjardins P, Lavoie C, Shin C, Cabral C, Petrov I, Greene JE. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer Journal of Applied Physics. 89: 7841-7845. DOI: 10.1063/1.1372162 |
0.401 |
|
| 2001 |
Kim H, Glass G, Desjardins P, Greene JE. Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics Journal of Applied Physics. 89: 194-205. DOI: 10.1063/1.1330244 |
0.37 |
|
| 2001 |
Kodambaka S, Petrova V, Vailionis A, Desjardins P, Cahill D, Petrov I, Greene J. TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies Thin Solid Films. 392: 164-168. DOI: 10.1016/S0040-6090(01)01022-7 |
0.317 |
|
| 2001 |
Chun J, Desjardins P, Petrov I, Greene J, Lavoie C, Cabral C. Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems Thin Solid Films. 391: 69-80. DOI: 10.1016/S0040-6090(01)00938-5 |
0.367 |
|
| 2001 |
Veres T, Cai M, Cochrane R, Rouabhi M, Roorda S, Desjardins P. MeV Si+ irradiation of Ni/Fe multilayers: structural, transport and magnetic properties Thin Solid Films. 382: 172-182. DOI: 10.1016/S0040-6090(00)01700-4 |
0.371 |
|
| 2001 |
Veres T, Desjardins P, Cochrane R, Cai M, Rouabhi M, Cheng L, Abdouche R, Sutton M. MeV Si+ irradiation of Fe/Ni bilayers: influence of microstructural and interfacial changes on magnetic properties Thin Solid Films. 382: 164-171. DOI: 10.1016/S0040-6090(00)01693-X |
0.377 |
|
| 2000 |
Vailionis A, Cho B, Glass G, Desjardins P, Cahill DG, Greene JE. Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001) Physical Review Letters. 85: 3672-5. PMID 11030978 DOI: 10.1103/Physrevlett.85.3672 |
0.346 |
|
| 2000 |
D’Arcy-Gall J, Gall D, Desjardins P, Petrov I, Greene JE. Role of fast sputtered particles during sputter deposition: Growth of epitaxialGe0.99C0.01/Ge(001) Physical Review B. 62: 11203-11208. DOI: 10.1103/Physrevb.62.11203 |
0.354 |
|
| 2000 |
D’Arcy-Gall J, Desjardins P, Petrov I, Greene JE, Paultre J, Masut RA, Gujrathi SC, Roorda S. Epitaxial metastable Ge1−yCy (y⩽0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites Journal of Applied Physics. 88: 96-104. DOI: 10.1063/1.373629 |
0.388 |
|
| 2000 |
Beaudoin M, Desjardins P, Aı̈t-Ouali A, Brebner JL, Yip RY, Marchand H, Isnard L, Masut RA. Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1−x/GayIn1−yP multilayers on InP(001) Journal of Applied Physics. 87: 2320-2326. DOI: 10.1063/1.372181 |
0.305 |
|
| 2000 |
Kim H, Glass G, Soares JANT, Desjardins P, Greene JE. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics Journal of Applied Physics. 88: 7067-7078. DOI: 10.1063/1.1324701 |
0.414 |
|
| 2000 |
Taylor N, Kim H, Desjardins P, Foo YL, Greene JE. Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics Applied Physics Letters. 76: 2853-2855. DOI: 10.1063/1.126495 |
0.405 |
|
| 2000 |
Kodambaka S, Petrova V, Vailionis A, Desjardins P, Cahill DG, Petrov I, Greene JE. In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001) Surface Review and Letters. 7: 589-593. DOI: 10.1016/S0218-625X(00)00081-6 |
0.335 |
|
| 1999 |
Vailionis A, Glass G, Desjardins P, Cahill DG, Greene JE. Electrically active and inactive B lattice sites in ultrahighly B doped Si(000): An X-ray near-edge absorption fine-structure and high-resolution diffraction study Physical Review Letters. 82: 4464-4467. DOI: 10.1103/Physrevlett.82.4464 |
0.318 |
|
| 1999 |
Desjardins P, Spila T, Gürdal O, Taylor N, Greene JE. Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastableGe1−xSnxalloys onGe(001)2×1 Physical Review B. 60: 15993-15998. DOI: 10.1103/Physrevb.60.15993 |
0.389 |
|
| 1999 |
Gall D, Petrov I, Desjardins P, Greene JE. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition Journal of Applied Physics. 86: 5524-5529. DOI: 10.1063/1.371555 |
0.418 |
|
| 1999 |
Taylor N, Kim H, Spila T, Eades JA, Glass G, Desjardins P, Greene JE. Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions Journal of Applied Physics. 85: 501-511. DOI: 10.1063/1.369481 |
0.424 |
|
| 1999 |
Shin C, Gall D, Desjardins P, Vailionis A, Kim H, Petrov I, Greene JE, Odén M. Growth and physical properties of epitaxial metastable cubic TaN(001) Applied Physics Letters. 75: 3808-3810. DOI: 10.1063/1.125463 |
0.401 |
|
| 1999 |
Soares JANT, Kim H, Glass G, Desjardins P, Greene JE. Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties Applied Physics Letters. 74: 1290-1292. DOI: 10.1063/1.123527 |
0.398 |
|
| 1998 |
Guillon S, Yip RY, Desjardins P, Chicoine M, Bougrioua Z, Beaudoin M, Aı̈t-Ouali A, Masut RA. Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 781-785. DOI: 10.1116/1.581521 |
0.411 |
|
| 1998 |
Yip RY-, Desjardins P, Isnard L, Aı̈t-Ouali A, Bensaada A, Marchand H, Brebner JL, Currie JF, Masut RA. Band alignment and barrier height considerations for the quantum-confined Stark effect Journal of Vacuum Science and Technology. 16: 801-804. DOI: 10.1116/1.581061 |
0.337 |
|
| 1998 |
Desjardins P, Isnard L, Marchand H, Masut RA. Competing strain relaxation mechanisms in organometallic vapor-phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 776-780. DOI: 10.1116/1.581058 |
0.334 |
|
| 1998 |
Kim H, Desjardins P, Abelson JR, Greene JE. Pathways for hydrogen desorption fromSi1−xGex(001)during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition Physical Review B. 58: 4803-4808. DOI: 10.1103/Physrevb.58.4803 |
0.394 |
|
| 1998 |
Rojas-López M, Navarro-Contreras H, Desjardins P, Gurdal O, Taylor N, Carlsson JRA, Greene JE. Raman scattering from fully strained Ge1−xSnx(x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy Journal of Applied Physics. 84: 2219-2223. DOI: 10.1063/1.368286 |
0.361 |
|
| 1998 |
Gurdal O, Desjardins P, Carlsson JRA, Taylor N, Radamson HH, Sundgren J-, Greene JE. Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 Journal of Applied Physics. 83: 162-170. DOI: 10.1063/1.366690 |
0.444 |
|
| 1998 |
Gujrathi SC, Roorda S, D'Arcy JG, Pflueger RJ, Desjardins P, Petrov I, Greene JE. Quantitative compositional depth profiling of Si1−x−yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 654-660. DOI: 10.1016/S0168-583X(97)00881-1 |
0.383 |
|
| 1997 |
Ababou Y, Desjardins P, Chennouf A, Masut RA, Yelon A, Beaudoin M, Bensaada A, Leonelli R, L'Espérance G. Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy Semiconductor Science and Technology. 12: 550-554. DOI: 10.1088/0268-1242/12/5/006 |
0.33 |
|
| 1997 |
Yip RY, Aït-Ouali A, Bensaada A, Desjardins P, Beaudoin M, Isnard L, Brebner JL, Currie JF, Masut RA. Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy Journal of Applied Physics. 81: 1905-1915. DOI: 10.1063/1.365549 |
0.348 |
|
| 1997 |
Marchand H, Desjardins P, Guillon S, Paultre J, Bougrioua Z, Yip RY, Masut RA. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001) Applied Physics Letters. 71: 527-529. DOI: 10.1063/1.119609 |
0.393 |
|
| 1997 |
Karr BW, Petrov I, Desjardins P, Cahill DG, Greene JE. In situ scanning tunneling microscopy studies of the evolution of surface morphology and microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering Surface and Coatings Technology. 94: 403-408. DOI: 10.1016/S0257-8972(97)00444-1 |
0.44 |
|
| 1997 |
Marchand H, Desjardins P, Guillon S, Paultre J-, Bougrioua Z, Yip RY-, Masut RA. Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001) Journal of Electronic Materials. 26: 1205-1213. DOI: 10.1007/S11664-997-0021-Z |
0.407 |
|
| 1996 |
Beaudoin M, Bensaada A, Leonelli R, Desjardins P, Masut RA, Isnard L, Chennouf A, L'Espérance G. Self-consistent determination of the band offsets in InAsxP1-x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1-x. Physical Review B. 53: 1990-1996. PMID 9983661 DOI: 10.1103/Physrevb.53.1990 |
0.355 |
|
| 1996 |
Ababou Y, Desjardins P, Masut RA, Yelon A, L'Espérance G. Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111) Canadian Journal of Physics. 74: 108-111. DOI: 10.1139/P96-843 |
0.409 |
|
| 1996 |
Ababou Y, Desjardins P, Chennouf A, Leonelli R, Hetherington D, Yelon A, L’Espérance G, Masut RA. Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth Journal of Applied Physics. 80: 4997-5005. DOI: 10.1063/1.363544 |
0.395 |
|
| 1996 |
Desjardins P, Beaudoin M, Leonelli R, L’Espérance G, Masut RA. Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine Journal of Applied Physics. 80: 846-852. DOI: 10.1063/1.362921 |
0.354 |
|
| 1996 |
Desjardins P, Greene JE. Step‐flow epitaxial growth on two‐domain surfaces Journal of Applied Physics. 79: 1423-1434. DOI: 10.1063/1.360980 |
0.334 |
|
| 1995 |
Meunier M, Desjardins P, Tabbal M, Elyaagoubi N, Izquierdo R, Yelon A. Laser processing of tungsten from WF6 and SiH4 Applied Surface Science. 86: 475-483. DOI: 10.1016/0169-4332(94)00455-2 |
0.319 |
|
| 1993 |
Desjardins P, Izquierdo R, Meunier M. Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4 Journal of Applied Physics. 73: 5216-5221. DOI: 10.1063/1.353749 |
0.36 |
|
| 1992 |
Izquierdo R, Desjardins P, Elyaagoubi N, Meunier M. Laser-Assisted Low Temperature Deposition of WSix from WF6 and SiH4 Mrs Proceedings. 282. DOI: 10.1557/Proc-282-209 |
0.317 |
|
| 1992 |
Meunier M, Lavoie C, Boivin S, Izquierdo R, Desjardins P. Modeling KrF excimer laser induced deposition of titanium from titanium tetrachloride Applied Surface Science. 54: 52-55. DOI: 10.1016/0169-4332(92)90016-Q |
0.34 |
|
| 1991 |
Desjardins P, Izquierdo R, Meunier M. Diode Laser Induced Chemical Vapor Deposition of WSIx from WF6 and SiH4 Mrs Proceedings. 236. DOI: 10.1557/Proc-236-127 |
0.342 |
|
| 1991 |
Lavoie C, Meunier M, Izquierdo R, Boivin S, Desjardins P. Large area excimer laser induced deposition of titanium from titanium tetrachloride Applied Physics a Solids and Surfaces. 53: 339-342. DOI: 10.1007/Bf00357198 |
0.366 |
|
| Show low-probability matches. |