Year |
Citation |
Score |
2020 |
Crawford CM, Ortiz BR, Gorai P, Stevanovic V, Toberer ES. Experimental and computational phase boundary mapping of CoSnTe. Journal of Materials Chemistry. A. 6: 24175-24185. PMID 32257213 DOI: 10.1039/C8Ta07539E |
0.341 |
|
2019 |
Gorai P, Toberer ES, Stevanović V. Effective n-type doping of Mg3Sb2 with group-3 elements Journal of Applied Physics. 125: 025105. DOI: 10.1063/1.5081833 |
0.332 |
|
2019 |
Gorai P, McKinney RW, Haegel NM, Zakutayev A, Stevanovic V. A computational survey of semiconductors for power electronics Energy and Environmental Science. 12: 3338-3347. DOI: 10.1039/C9Ee01529A |
0.35 |
|
2018 |
Miller SA, Witting I, Aydemir U, Peng L, Rettie AJ, Gorai P, Chung DY, Kanatzidis MG, Grayson M, Stevanović V, Toberer ES, Snyder GJ. Polycrystalline
ZrTe5
Parametrized as a Narrow-Band-Gap Semiconductor for Thermoelectric Performance Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.014025 |
0.307 |
|
2018 |
Kurchin RC, Gorai P, Buonassisi T, Stevanović V. Structural and Chemical Features Giving Rise to Defect Tolerance of Binary Semiconductors Chemistry of Materials. 30: 5583-5592. DOI: 10.1021/Acs.Chemmater.8B01505 |
0.396 |
|
2018 |
Ortiz BR, Peng W, Gomes LC, Gorai P, Zhu T, Smiadak DM, Snyder GJ, Stevanović V, Ertekin E, Zevalkink A, Toberer ES. Ultralow Thermal Conductivity in Diamond-Like Semiconductors: Selective Scattering of Phonons from Antisite Defects Chemistry of Materials. 30: 3395-3409. DOI: 10.1021/Acs.Chemmater.8B00890 |
0.326 |
|
2018 |
Ohno S, Imasato K, Anand S, Tamaki H, Kang SD, Gorai P, Sato HK, Toberer ES, Kanno T, Snyder GJ. Phase Boundary Mapping to Obtain n-type Mg3Sb2-Based Thermoelectrics Joule. 2: 141-154. DOI: 10.1016/J.Joule.2017.11.005 |
0.303 |
|
2017 |
Gorai P, Stevanović V, Toberer ES. Computationally guided discovery of thermoelectric materials Nature Reviews Materials. 2. DOI: 10.1038/Natrevmats.2017.53 |
0.308 |
|
2017 |
Melamed CL, Ortiz BR, Gorai P, Martinez AD, McMahon WE, Miller EM, Stevanović V, Tamboli AC, Norman AG, Toberer ES. Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi2Se3 Single Crystals Chemistry of Materials. 29: 8472-8477. DOI: 10.1021/Acs.Chemmater.7B03198 |
0.326 |
|
2017 |
Ortiz BR, Gorai P, Stevanović V, Toberer ES. Thermoelectric Performance and Defect Chemistry in n-Type Zintl KGaSb4 Chemistry of Materials. 29: 4523-4534. DOI: 10.1021/Acs.Chemmater.7B01217 |
0.363 |
|
2017 |
Brandt RE, Poindexter JR, Gorai P, Kurchin RC, Hoye RLZ, Nienhaus L, Wilson MWB, Polizzotti JA, Sereika R, Žaltauskas R, Lee LC, MacManus-Driscoll JL, Bawendi M, Stevanović V, Buonassisi T. Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening Chemistry of Materials. 29: 4667-4674. DOI: 10.1021/Acs.Chemmater.6B05496 |
0.342 |
|
2017 |
Gorai P, Seebauer EG. Electric field-driven point defect pile-up near ZnO polar surfaces Solid State Ionics. 301: 95-98. DOI: 10.1016/J.Ssi.2017.01.015 |
0.672 |
|
2017 |
Goyal A, Gorai P, Peng H, Lany S, Stevanović V. A computational framework for automation of point defect calculations Computational Materials Science. 130: 1-9. DOI: 10.1016/J.Commatsci.2016.12.040 |
0.367 |
|
2016 |
Gorai P, Seebauer EG, Ertekin E. Mechanism and energetics of O and O2 adsorption on polar and non-polar ZnO surfaces. The Journal of Chemical Physics. 144: 184708. PMID 27179501 DOI: 10.1063/1.4948939 |
0.561 |
|
2016 |
Gorai P, Ertekin E, Seebauer EG. Surface-assisted defect engineering of point defects in ZnO Applied Physics Letters. 108. DOI: 10.1063/1.4953878 |
0.679 |
|
2016 |
Martinez AD, Warren EL, Gorai P, Borup KA, Kuciauskas D, Dippo PC, Ortiz BR, Macaluso RT, Nguyen SD, Greenaway AL, Boettcher SW, Norman AG, Stevanović V, Toberer ES, Tamboli AC. Solar energy conversion properties and defect physics of ZnSiP2 Energy and Environmental Science. 9: 1031-1041. DOI: 10.1039/C5Ee02884A |
0.374 |
|
2015 |
Lee S, Damodaran AR, Gorai P, Oh N, Moyer JA, Kwon JH, Ferdous N, Shah A, Chen Z, Breckenfeld E, Mangalam RV, Braun PV, Schiffer P, Shim M, Zuo JM, et al. A novel, layered phase in Ti-rich SrTiO3 epitaxial thin films. Advanced Materials (Deerfield Beach, Fla.). 27: 861-8. PMID 25523179 DOI: 10.1002/Adma.201403602 |
0.302 |
|
2015 |
Pangan-Okimoto KM, Gorai P, Hollister AG, Seebauer EG. Model for oxygen interstitial injection from the rutile TiO<inf>2</inf>(110) surface into the bulk Journal of Physical Chemistry C. 119: 9955-9965. DOI: 10.1021/Acs.Jpcc.5B02009 |
0.771 |
|
2015 |
Gorai P, Parilla P, Toberer ES, Stevanović V. Computational Exploration of the Binary A1B1 Chemical Space for Thermoelectric Performance Chemistry of Materials. 27: 6213-6221. DOI: 10.1021/Acs.Chemmater.5B01179 |
0.318 |
|
2014 |
Gorai P, Seebauer EG. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4890472 |
0.651 |
|
2014 |
Gorai P, Hollister AG, Pangan-Okimoto K, Seebauer EG. Kinetics of oxygen interstitial injection and lattice exchange in rutile TiO2 Applied Physics Letters. 104. DOI: 10.1063/1.4876916 |
0.764 |
|
2013 |
Gorai P, Hollister AG, Seebauer EG. Electrostatic drift effects on near-surface defect distribution in TiO 2 Applied Physics Letters. 103. DOI: 10.1063/1.4824614 |
0.774 |
|
2013 |
Hollister AG, Gorai P, Seebauer EG. Surface-based manipulation of point defects in rutile TiO2 Applied Physics Letters. 102. DOI: 10.1063/1.4810073 |
0.772 |
|
2012 |
Gorai P, Hollister AG, Seebauer EG. Measurement of defect-mediated oxygen self-diffusion in metal oxides Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.011202Jss |
0.755 |
|
2012 |
Seebauer EG, Gorai P. Defect engineering at the nanoscale: Challenges and trends Ecs Transactions. 50: 291-302. DOI: 10.1149/05005.0291ecst |
0.595 |
|
2012 |
Gorai P, Kondratenko YV, Seebauer EG. Dependence of near-surface dopant pile-up on post-implant annealing conditions Aip Conference Proceedings. 1496: 253-256. DOI: 10.1063/1.4766536 |
0.612 |
|
2012 |
Gorai P, Kondratenko YV, Seebauer EG. Mechanism and kinetics of near-surface dopant pile-up during post-implant annealing Journal of Applied Physics. 111. DOI: 10.1063/1.4714556 |
0.701 |
|
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