| Year |
Citation |
Score |
| 2019 |
Toyoda N, Tilakaratne B, Saleem I, Chu W. Cluster beams, nano-ripples, and bio applications Applied Physics Reviews. 6: 20901. DOI: 10.1063/1.5030500 |
0.307 |
|
| 2017 |
Tilakaratne BP, Chen QY, Chu WK. Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment. Materials (Basel, Switzerland). 10. PMID 28885577 DOI: 10.3390/Ma10091056 |
0.325 |
|
| 2017 |
Hsieh W, Wadekar PV, Liu H, Lee C, Chang C, Tu L, You S, Chen QY, Huang H, Ho N, Seo H, Chu W. Water-modulated oxidation in the growth of m-ZnO epitaxial thin film by atomic layer deposition Journal of Vacuum Science and Technology. 35: 21511. DOI: 10.1116/1.4975073 |
0.566 |
|
| 2016 |
Chang CF, Wadekar PV, Hsieh WC, Lin WY, Wang YS, Wang JH, Lin JJ, Huang HC, Chang CW, Tu LW, Liao CH, Liao HH, Ho NJ, Seo HW, Chen QY, ... Chu WK, et al. Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO - I - Si heterojunctions Aip Advances. 6. DOI: 10.1063/1.4960012 |
0.328 |
|
| 2016 |
Saleem I, Tilakaratne BP, Li Y, Bao J, Wijesundera DN, Chu WK. Cluster ion beam assisted fabrication of metallic nanostructures for plasmonic applications Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 380: 20-25. DOI: 10.1016/J.Nimb.2016.05.002 |
0.341 |
|
| 2016 |
Wang Q, Shao Y, Gao N, Chu W, Shen X, Lu X, Chen J, Zhu Y. Degradation kinetics and mechanism of 2,4-Di-tert-butylphenol with UV/persulfate Chemical Engineering Journal. 304: 201-208. DOI: 10.1016/j.cej.2016.06.092 |
0.397 |
|
| 2014 |
Adhikari AR, Tilakaratne BP, Wijesundera D, Chu W. A Study of Surface Modification of Poly(lactic-co-glycolic) Acid Using Argon Ion Irradiation Journal of Surface Engineered Materials and Advanced Technology. 4: 326-331. DOI: 10.4236/Jsemat.2014.46036 |
0.376 |
|
| 2014 |
Martin MS, Wijesundera D, Thompson PE, Wang X, Chu W, Shao L. Experimental and modeling study on increasing accuracy of strain measurement by ion beam analysis in SiGe strained layer thin films Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 332: 385-388. DOI: 10.1016/J.Nimb.2014.02.102 |
0.318 |
|
| 2013 |
Shao L, Chen D, Myers M, Wang J, Tilakaratne B, Wijesundera D, Chu W, Xie G, Zare A, Lucca DA. Smoothing metallic glasses without introducing crystallization by gas cluster ion beam Applied Physics Letters. 102: 101604. DOI: 10.1063/1.4794540 |
0.331 |
|
| 2013 |
Lozano O, Chen QY, Wadekar PV, Seo HW, Chinta PV, Chu LH, Tu LW, Lo I, Yeh SW, Ho NJ, Chuang FC, Jang DJ, Wijesundera D, Chu WK. Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films Solar Energy Materials and Solar Cells. 113: 171-178. DOI: 10.1016/J.Solmat.2013.02.006 |
0.348 |
|
| 2013 |
Wijesundera DN, Rajapaksa I, Wang X, Liu JR, Rusakova I, Chu WK. Ion beam engineered nano silver silicon substrates for surface enhanced Raman spectroscopy Journal of Raman Spectroscopy. 44: 1014-1017. DOI: 10.1002/Jrs.4326 |
0.36 |
|
| 2012 |
Martin MS, Chen D, Thompson PE, Wang X, Chu WK, Cagin T, Shao L. Cluster-ion bombardment studies to reveal the amorphization mode in strained Si 0.8Ge 0.2 Philosophical Magazine Letters. 92: 625-632. DOI: 10.1080/09500839.2012.705034 |
0.322 |
|
| 2012 |
Wijesundera DN, Ma KB, Wang X, Tilakaratne BP, Shao L, Chu W. The role of flux-focusing in the origin of shoulders in ion channeling angular scans Physics Letters A. 376: 1763-1766. DOI: 10.1016/J.Physleta.2012.04.013 |
0.309 |
|
| 2012 |
Wijesundera D, Jayarathna S, Bellwied R, Chu WK. A simulation study of antimatter-helium ion planar channeling in silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 287: 15-18. DOI: 10.1016/J.Nimb.2012.05.032 |
0.328 |
|
| 2011 |
Diaz-Pinto C, Wang X, Lee S, Hadjiev VG, De D, Chu W, Peng H. Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation Physical Review B. 83. DOI: 10.1103/Physrevb.83.235410 |
0.333 |
|
| 2010 |
Hua W, Yao SD, Theodore ND, Wang XM, Chu WK, Martin M, Shao L. Ion-irradiation-induced athermal annealing of helium bubbles in SiC Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 268: 2325-2328. DOI: 10.1016/J.Nimb.2010.04.004 |
0.384 |
|
| 2009 |
Carter J, Fu EG, Martin M, Xie G, Zhang X, Wang YQ, Wijesundera D, Wang XM, Chu W, Shao L. Effects of Cu ion irradiation in Cu50Zr45Ti5 metallic glass Scripta Materialia. 61: 265-268. DOI: 10.1016/J.Scriptamat.2009.03.060 |
0.334 |
|
| 2009 |
Aitkaliyeva A, McCarthy MC, Martin M, Fu EG, Wijesundera D, Wang X, Chu WK, Jeong HK, Shao L. Defect formation and annealing kinetics in ion irradiated carbon nanotube buckypapers Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 3443-3446. DOI: 10.1016/J.Nimb.2009.08.007 |
0.342 |
|
| 2009 |
Carter J, Fu EG, Martin M, Xie G, Zhang X, Wang YQ, Wijesundera D, Wang XM, Chu W, McDeavitt SM, Shao L. Ion irradiation induced nanocrystal formation in amorphous Zr55Cu30Al10Ni5 alloy Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 267: 2827-2831. DOI: 10.1016/J.Nimb.2009.05.068 |
0.314 |
|
| 2009 |
Hua W, Yao SD, Wijesundera D, Wang XM, Chu WK, Martin M, Carter J, Hollander M, Shao L. Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 813-816. DOI: 10.1016/J.Nimb.2008.12.021 |
0.331 |
|
| 2008 |
Shao L, Thompson PE, Chen QY, Ma KB, Liu JR, Chu W. High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si Applied Physics Letters. 93: 41908. DOI: 10.1063/1.2963480 |
0.405 |
|
| 2007 |
Zhu L, Martin M, Hollander M, Wang YQ, Chen Q, Ma K, Yu XK, Liu JR, Chu W, Shao L. Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth Journal of Vacuum Science & Technology B. 25: 1276-1279. DOI: 10.1116/1.2749529 |
0.35 |
|
| 2007 |
Yu X, Ma KB, Chen QY, Wang X, Liu J, Chu W, Shao L, Thompson PE. Diffusion of antimony in silicon in the presence of point defects Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 261: 1146-1149. DOI: 10.1016/J.Nimb.2007.04.178 |
0.375 |
|
| 2006 |
Zhang Z, Chen Q, Lee HD, Xue YY, Sun YY, Chen H, Chen F, Chu W. Absence of ferromagnetism in Co-doped ZnO prepared by thermal diffusion of Co atoms Journal of Applied Physics. 100: 43909. DOI: 10.1063/1.2244480 |
0.31 |
|
| 2006 |
Yu X, Shao L, Chen QY, Trombetta L, Wang C, Dharmaiahgari B, Wang X, Chen H, Ma KB, Liu J, Chu W. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 249: 414-416. DOI: 10.1016/J.Nimb.2006.04.041 |
0.416 |
|
| 2006 |
Shao L, Nastasi M, Thompson PE, Rusakova I, Chen QY, Liu J, Chu W. The energy dependence of excessive vacancies created by high energy Si+ ion implantation in Si Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 242: 506-508. DOI: 10.1016/J.Nimb.2005.08.193 |
0.402 |
|
| 2006 |
Shao L, Lee JK, Höchbauer T, Nastasi M, Thompson PE, Rusakova I, Seo HW, Chen QY, Liu JR, Chu W. Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 242: 509-511. DOI: 10.1016/J.Nimb.2005.08.192 |
0.393 |
|
| 2006 |
Shao L, Nastasi M, Thompson PE, Chen QY, Liu J, Chu W. Application of high energy ion beam for the control of boron diffusion Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 242: 670-672. DOI: 10.1016/J.Nimb.2005.08.191 |
0.385 |
|
| 2006 |
Yu XK, Shao L, Rusakova I, Wang XM, Ma KB, Chen H, Liu J, Chu W. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 242: 434-436. DOI: 10.1016/J.Nimb.2005.08.139 |
0.383 |
|
| 2006 |
Seo HW, Chen QY, Tu LW, Chen M, Wang XM, Hsiao CL, Tu YJ, Shao L, Lozano O, Chu WK. GaN nanorod assemblies on self-implanted (1 1 1) Si substrates Microelectronic Engineering. 83: 1714-1717. DOI: 10.1016/J.Mee.2006.01.258 |
0.355 |
|
| 2006 |
Chu W, Liu J, Zhang Z, Ma KB. High Energy Ion Beam Analysis Techniques Materials Science and Technology. DOI: 10.1002/9783527603978.Mst0026 |
0.319 |
|
| 2005 |
Hoover BG, McMichael CK, Wood LT, Zhang Z, Liu JR, Chu WK. Laser-array generators produced by patterned ion irradiation of acrylic films Proceedings of Spie - the International Society For Optical Engineering. 5897: 1-10. DOI: 10.1117/12.619144 |
0.346 |
|
| 2005 |
Liu J, Wang X, Lin S, Chen H, Chu W. Small B-cluster ions induced damage in silicon Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 241: 636-640. DOI: 10.1016/J.Nimb.2005.07.106 |
0.303 |
|
| 2005 |
Chen J, Shao L, Lin T, Liu J, Chu W. The effects of energy non-monochromaticity of 11B ion beams on 11B diffusion Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 237: 155-159. DOI: 10.1016/J.Nimb.2005.04.091 |
0.377 |
|
| 2004 |
Shao L, Thompson PE, Heide PAWvd, Patel S, Chen QY, Wang X, Chen H, Liu J, Chu W. Ultrashallow junction formation by point defect engineering Journal of Vacuum Science & Technology B. 22: 302-305. DOI: 10.1116/1.1621887 |
0.364 |
|
| 2004 |
Shao L, Chen J, Zhang J, Tang D, Patel S, Liu J, Wang X, Chu W. Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation Journal of Applied Physics. 96: 919-921. DOI: 10.1063/1.1756685 |
0.369 |
|
| 2004 |
Shao L, Zhang J, Chen J, Tang D, Thompson PE, Patel S, Wang X, Chen H, Liu J, Chu W. Enhancement of boron solid solubility in Si by point-defect engineering Applied Physics Letters. 84: 3325-3327. DOI: 10.1063/1.1711179 |
0.37 |
|
| 2004 |
Shao L, Wang X, Rusakova I, Chen H, Liu J, Thompson PE, Heide PAWvd, Chu W. Study on interfacial dislocations of Si substrate/epitaxial layer by defect trapping Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 219: 938-941. DOI: 10.1016/J.Nimb.2004.01.192 |
0.345 |
|
| 2004 |
Shao L, Liu J, Wang C, Ma KB, Zhang J, Chen J, Tang D, Patel S, Chu W. Response function during oxygen sputter profiling for deconvolution of boron spatial distribution Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 219: 303-306. DOI: 10.1016/J.Nimb.2004.01.073 |
0.339 |
|
| 2003 |
Chu W, Shao L, Liu J. Application of High Energy Ion Beam on the Control of Boron Diffusion Mrs Proceedings. 792. DOI: 10.1557/Proc-792-R7.1 |
0.363 |
|
| 2003 |
Shao L, Wang X, Chen H, Liu J, Bennett J, Larsen L, Chu W. Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing Problem and Solution Electrochemical and Solid State Letters. 6. DOI: 10.1149/1.1570631 |
0.351 |
|
| 2003 |
Shao L, Liu J, Wang C, Ma KB, Zhang J, Chen J, Tang D, Patel S, Chu W. Response function during oxygen sputter profiling and its application to deconvolution of ultrashallow B depth profiles in Si Applied Physics Letters. 83: 5467-5469. DOI: 10.1063/1.1636269 |
0.337 |
|
| 2003 |
Shao L, Thompson PE, Bennett J, Dharmaiahgari BP, Trombetta L, Wang X, Chen H, Seo H, Chen QY, Liu J, Chu W. Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth Applied Physics Letters. 83: 2823-2825. DOI: 10.1063/1.1615685 |
0.608 |
|
| 2003 |
Shao L, Wang X, Rusakova I, Chen H, Liu J, Thompson PE, Chu W. Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique Applied Physics Letters. 83: 934-936. DOI: 10.1063/1.1596385 |
0.362 |
|
| 2003 |
Shao L, Liu J, Wang X, Chen H, Thompson PE, Chu W. Reduction of boride-enhanced diffusion by point defect engineering and its application for shallow junction formation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 206: 413-416. DOI: 10.1016/S0168-583X(03)00777-8 |
0.379 |
|
| 2003 |
Shao L, Liu J, Chen QY, Chu W. Boron diffusion in silicon: the anomalies and control by point defect engineering Materials Science & Engineering R-Reports. 42: 65-114. DOI: 10.1016/J.Mser.2003.08.002 |
0.377 |
|
| 2002 |
Shao L, Liu JR, Thompson PE, Wang XM, Rusakova I, Chen H, Chu W. Point Defect Engineering and Its Application in Shallow Junction Formation Electrochemical and Solid State Letters. 5. DOI: 10.1149/1.1504903 |
0.395 |
|
| 2002 |
Lu X, Shao L, Wang X, Liu J, Chu W, Bennett J, Larson L, Ling P. Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon Journal of Vacuum Science & Technology B. 20: 992-994. DOI: 10.1116/1.1479361 |
0.377 |
|
| 2002 |
Shao L, Lu X, Wang X, Rusakova I, Liu J, Chu W. Defect engineering: An approach on ultrashallow junction in silicon Journal of Vacuum Science & Technology B. 20: 419-421. DOI: 10.1116/1.1424283 |
0.396 |
|
| 2002 |
Shao L, Thompson PE, Bleiler RJ, Baumann S, Wang X, Chen H, Liu J, Chu W. Reduction of boride enhanced diffusion in MeV-implanted silicon Journal of Applied Physics. 92: 5793-5797. DOI: 10.1063/1.1513207 |
0.391 |
|
| 2002 |
Shao L, Wang X, Liu J, Bennett J, Larsen L, Chu W. Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation Journal of Applied Physics. 92: 4307-4311. DOI: 10.1063/1.1505672 |
0.357 |
|
| 2002 |
Liu J, Wang X, Shao L, Lu X, Chu W. Non-linear effect on radiation damage of silicon by cluster ion bombardment Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 190: 787-791. DOI: 10.1016/S0168-583X(01)01305-2 |
0.326 |
|
| 2001 |
Seo H, Chen QY, Wang C, Chu W, Chuang TM, Lee S, Liou Y. PLANAR JOSEPHSON JUNCTIONS FABRICATED BY FOCUSED-ION BEAM International Journal of Modern Physics B. 15: 3359-3360. DOI: 10.1142/S0217979201007774 |
0.583 |
|
| 2001 |
Shao L, Lu X, Wang X, Rusakova I, Liu J, Chu W. Retardation of boron diffusion in silicon by defect engineering Applied Physics Letters. 78: 2321-2323. DOI: 10.1063/1.1361280 |
0.381 |
|
| 2000 |
Zhai H, Chen QY, Liu J, Chu W. Nanofabrication of Planar High Temperature Superconducting Josephson Junctions Using Focused Ion Beam Technology Mrs Proceedings. 636. DOI: 10.1557/Proc-636-D5.8.1 |
0.332 |
|
| 2000 |
Jina J, Rusakova I, Li Q, Liu J, Chu W. Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B5.6 |
0.302 |
|
| 2000 |
Lu X, Shao L, Jin J, Li Q, Rusakova I, Chen QY, Liu J, Chu W, Ling P. Ultra-shallow Junction Formation via GeB- ion Implantation of Si Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B4.5 |
0.372 |
|
| 2000 |
Jin J, Liu J, Heide PAWvd, Chu W. Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation Applied Physics Letters. 76: 574-576. DOI: 10.1063/1.125821 |
0.363 |
|
| 1999 |
Wilson JF, Liu JR, Romero-Borja F, Chu W. Study Of Hydrogen Annealing Of Ultrahigh Molecular Weight Polyethylene Irradiated With High-Energy Protons Journal of Materials Research. 14: 4431-4436. DOI: 10.1557/Jmr.1999.0600 |
0.332 |
|
| 1999 |
Zhang Z, Rusakova IA, Chu W. Preservation of Original Single Domain Phase in the Implanted LiTaO3 Single Crystal by Using Hot Implantation Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L740 |
0.316 |
|
| 1999 |
Chen X, Wu N, Ignatiev A, Zhang Z, Chu W. Structure and conducting properties of La0.5Sr0.5CoO3−δ films on YSZ Thin Solid Films. 350: 130-137. DOI: 10.1016/S0040-6090(99)00225-4 |
0.316 |
|
| 1999 |
Suh S, Zhang Z, Chu WK, Hoffman DM. Atmospheric-pressure chemical vapor deposition of fluorine-doped tin oxide thin films Thin Solid Films. 345: 240-243. DOI: 10.1016/S0040-6090(98)01421-7 |
0.329 |
|
| 1997 |
Suh S, Hoffman DM, Atagi LM, Smith DC, Liu J, Chu W. Precursor oxidation state control of film stoichiometry in the metal-organic chemical vapor deposition of tin oxide thin films Chemistry of Materials. 9: 730-735. DOI: 10.1021/Cm960423T |
0.311 |
|
| 1996 |
Hoffman DM, Rangarajan SP, Athavale SD, Economou DJ, Liu J, Zheng Z, Chu W. Chemical Vapor Deposition Of Aluminum And Gallium Nitride Thin Films From Metalorganic Precursors Journal of Vacuum Science and Technology. 14: 306-311. DOI: 10.1116/1.579893 |
0.32 |
|
| 1996 |
Senapati L, Sharma RP, Venkatesan T, Zhang Z, Chu W. Ion channeling studies of regrowth kinetics in crystalline metal oxides used with high temperature superconductors Applied Physics Letters. 68: 123-125. DOI: 10.1063/1.116776 |
0.362 |
|
| 1996 |
Liu J, Zheng Z, Chu W. Stopping cross sections of C, Al, and Si for 7Li ions Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 118: 24-28. DOI: 10.1016/0168-583X(95)01122-6 |
0.376 |
|
| 1996 |
Miller JH, Zou Z, Cho HM, Liu J, Zheng ZS, Chu WK. Phase sensitive measurements of the pairing state symmetries of cuprate superconductors using tricrystal microbridges Journal of Low Temperature Physics. 105: 527-532. DOI: 10.1007/Bf00768439 |
0.306 |
|
| 1995 |
Hoffman DM, Prakash Rangarajan S, Athavale SD, Economou DJ, Liu J, Zheng Z, Chu W. Plasma‐enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 820-825. DOI: 10.1116/1.579834 |
0.336 |
|
| 1994 |
Wu JZ, Chu WK. Anisotropy of the transport critical current in (110)-, (113)-, and a-axis-oriented YBa2Cu3O7- delta thin films. Physical Review. B, Condensed Matter. 49: 1381-1386. PMID 10010449 |
0.421 |
|
| 1994 |
Hoffman DM, Atagi LM, Chu W, Liu J, Zheng Z, Rubiano RR, Springer RW, Smith DC. Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films Mrs Proceedings. 343: 523. DOI: 10.1557/Proc-343-523 |
0.337 |
|
| 1994 |
Hoffman DM, Rangarajan SP, Athavale SD, Deshmukh SC, Economou DJ, Liu JR, Zheng Z, Chu WK. Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor Journal of Materials Research. 9: 3019-3021. DOI: 10.1557/Jmr.1994.3019 |
0.346 |
|
| 1994 |
Atagi LM, Hoffman DM, Liu J, Zheng Z, Chu W, Rubiano RR, Springer RW, Smith DC. Homoleptic Tin and Silicon Amido Compounds as Precursors for Low-Temperature Atmospheric Pressure Chemical Vapor Deposition of Tin and Silicon Oxide Thin Films Chemistry of Materials. 6: 360-361. DOI: 10.1021/Cm00040A005 |
0.331 |
|
| 1993 |
Wu JZ, Yu N, Chu WK. Anisotropy of the ion-beam radiation effect in YBa2Cu3O7- delta (110) thin films. Physical Review. B, Condensed Matter. 48: 9929-9931. PMID 10007262 |
0.485 |
|
| 1993 |
Hoffman DM, Rangarajan SP, Athavale SD, Economou DJ, Liu J, Zheng Z, Chu W. Plasma Enhanced Metal-Organic Chemical Vapor Deposition of Germanium Nitride Thin Films Mrs Proceedings. 335. DOI: 10.1557/Proc-335-3 |
0.318 |
|
| 1992 |
Wu JZ, Yao XX, Ting CS, Chu WK. Proximity effect in superconducting layered structures. Physical Review. B, Condensed Matter. 46: 14059-14068. PMID 10003475 DOI: 10.1103/Physrevb.46.14059 |
0.404 |
|
| 1991 |
Wu JZ, Hsieh PY, McGuire AV, Schmidt DL, Wood LT, Shen Y, Chu WK. Anisotropic properties of the high-quality epitaxial YBa2Cu3O7- delta (110) thin film. Physical Review. B, Condensed Matter. 44: 12643-12646. PMID 9999439 |
0.433 |
|
| 1991 |
Wu JZ, Ting CS, Chu WK, Yao XX. Proximity effect on the superconducting transition temperature of YBa2Cu3O7-x/PrBa2Cu3O7-x superlattices. Physical Review. B, Condensed Matter. 44: 411-414. PMID 9998264 |
0.384 |
|
| 1990 |
Zhang Z, Liu J, Ma KB, Wu J, Yu N, Zhao Y, Lam WA, Hsieh PY, Chu W. Effect of Ion Implantation on YBCO Superconductor Thin Film Mrs Proceedings. 201: 331. DOI: 10.1557/Proc-201-331 |
0.549 |
|
| 1990 |
Reeber RR, Kusy RP, Yu N, Chu W. Formation of a solid lubricant in boron carbide by nitrogen ion implantation and laser annealing Applied Physics Letters. 56: 1075-1077. DOI: 10.1063/1.102570 |
0.368 |
|
| 1989 |
Chu W. Sub-100-nm x-ray mask technology using focused-ion-beam lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7: 1583. DOI: 10.1116/1.584493 |
0.32 |
|
| 1989 |
Zhang J, Lin S, Chu W, Kusy R, Whitley J. The diffusion of metal in polymer films Vacuum. 39: 143-145. DOI: 10.1016/0042-207X(89)90182-6 |
0.358 |
|
| 1986 |
Chu W, Allen WR, Picraux ST, Ellison JA. Ion Beam Channeling in Superlattices Mrs Proceedings. 69: 69. DOI: 10.1557/Proc-69-69 |
0.311 |
|
| 1981 |
Mader S, Chu W. Defect Analysis of Silicon Irradiated by Pulsed Ion Beams Mrs Proceedings. 4. DOI: 10.1557/Proc-4-395 |
0.341 |
|
| 1980 |
Chu WK. Stability study of laser irradiation of silicon diffused with arsenic Applied Physics Letters. 36: 273-275. DOI: 10.1063/1.91450 |
0.3 |
|
| 1980 |
Chu WK. 2. Energy Loss of High-Velocity Ions in Matter Methods in Experimental Physics. 17: 25-72. DOI: 10.1016/S0076-695X(08)60297-5 |
0.329 |
|
| 1978 |
Lurio A, Keller J, Chu W. Channeling dips for Si K and L X-ray yield Nuclear Instruments and Methods. 149: 387-391. DOI: 10.1016/0029-554X(78)90893-5 |
0.318 |
|
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