Year |
Citation |
Score |
2012 |
Wang P, Li H, Lu T. Orientation Modulated Epitaxy of Cu Nanorods on Si(1 0 0) Substrate Ieee Transactions On Nanotechnology. 11: 542-545. DOI: 10.1109/Tnano.2012.2182778 |
0.427 |
|
2012 |
Wang P, Frey MD, Washington M, Nayak S, Lu T. Resistivity of sub-50 nm copper lines epitaxially grown on Si(100) substrate Thin Solid Films. 520: 6106-6108. DOI: 10.1016/J.Tsf.2012.05.070 |
0.327 |
|
2011 |
He M, Li H, Wang P, Lu T. Bias-temperature stress of Al on porous low-k dielectrics Microelectronics Reliability. 51: 1342-1345. DOI: 10.1016/J.Microrel.2011.03.004 |
0.369 |
|
2011 |
Wang P, Bult J, Ghoshal R, Ghoshal R, Lu T. Rapid ultraviolet-curing of epoxy siloxane films Materials Chemistry and Physics. 129: 678-682. DOI: 10.1016/J.Matchemphys.2011.05.007 |
0.336 |
|
2010 |
Li H, Snow P, He M, Wang PI, Wang GC, Lu TM. Biaxially textured Al film growth on CaF2 nanostructures toward a method of preparing single-crystalline Si film on glass substrates. Acs Nano. 4: 5627-32. PMID 20839785 DOI: 10.1021/Nn1011978 |
0.368 |
|
2010 |
He M, Ou Y, Wang P, Lu T. Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress Applied Physics Letters. 96: 222901. DOI: 10.1063/1.3442485 |
0.314 |
|
2009 |
Wang PI, Parker TC, Karabacak T, Wang GC, Lu TM. Size control of Cu nanorods through oxygen-mediated growth and low temperature sintering. Nanotechnology. 20: 085605. PMID 19417453 DOI: 10.1088/0957-4484/20/8/085605 |
0.445 |
|
2009 |
Wang PI, Lee SH, Parker TC, Frey MD, Karabacak T, Lu JQ, Lu TM. Low temperature wafer bonding by copper nanorod array Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3075900 |
0.414 |
|
2008 |
Cansizoglu MF, Watanabe F, Wang PI, Karabacak T. Evolution of crystal orientation in obliquely deposited magnesium nanostructures for hydrogen storage applications Materials Research Society Symposium Proceedings. 1042: 53-58. DOI: 10.1557/Proc-1042-S04-06 |
0.314 |
|
2008 |
Ou Y, Wang P, He M, Lu T-, Leung P, Spooner TA. Conduction Mechanisms of Ta/Porous SiCOH Films under Electrical Bias Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2992125 |
0.376 |
|
2008 |
Ou Y, Wang PI, Vanamurthy LH, Bakhru H, Lu TM, Spencer G. Thermal stability study of pore sealing using parylene N Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2967719 |
0.349 |
|
2008 |
Wang PI, Juneja JS, Ou Y, Lu TM, Spencer GS. Instability of metal barrier with porous methyl silsesquioxane films Journal of the Electrochemical Society. 155: H53-H58. DOI: 10.1149/1.2806030 |
0.416 |
|
2008 |
Wang P, Nalamasu O, Ghoshal R, Ghoshal R, Schaper CD, Li A, Lu T. Novel photocurable epoxy siloxane polymers for photolithography and imprint lithography applications Journal of Vacuum Science & Technology B. 26: 244-248. DOI: 10.1116/1.2834559 |
0.302 |
|
2007 |
Wang PI, Karabacak T, Yu J, Li HF, Pethuraja GG, Lee SH, Liu MZ, Lu JQ, Lu TM. Low temperature copper-nanorod bonding for 3D integration Materials Research Society Symposium Proceedings. 970: 225-230. DOI: 10.1557/Proc-0970-Y04-07 |
0.364 |
|
2007 |
Pimanpang S, Wang PI, Ye D, Juneja JS, Wang GC, Lu TM. Enhancement of Cu (hfac)2 chemisorption on the parylene surface by N2 plasma surface modification Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2766606 |
0.408 |
|
2007 |
Senkevich JJ, Woods BW, McMahon JJ, Wang PI. Thermomechanical properties of parylene X, A room-temperature chemical vapor depositable crosslinkable polymer Chemical Vapor Deposition. 13: 55-59. DOI: 10.1002/Cvde.200606541 |
0.371 |
|
2006 |
Ee YC, Juneja JS, Wang PI, Lu TM, Bakhru H, Chan L, Law SB, Yong C, Chen Z, Xu S. Bias-temperature stability of Ti-Si-N-O films Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2184070 |
0.383 |
|
2006 |
Wang PI, Juneja JS, Murarka SP, Lu TM, Jezewski C, Ghoshal R, Bakhru H. Stability of Cu on epoxy siloxane polymer under bias temperature stress Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2172569 |
0.59 |
|
2006 |
Wang PI, Wu Z, Lu TM, Interrante LV. A novel polycarbosilane-based low- k dielectric material Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2167932 |
0.482 |
|
2006 |
Pimanpang S, Wang PI, Juneja JS, Wang GC, Lu TM. Interfacial interaction of in situ Cu growth on tetrasulfide self-assembled monolayer on plasma treated parylene surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1884-1891. DOI: 10.1116/1.2333574 |
0.397 |
|
2006 |
Karabacak T, Deluca JS, Wang PI, Ten Eyck GA, Ye D, Wang GC, Lu TM. Low temperature melting of copper nanorod arrays Journal of Applied Physics. 99. DOI: 10.1063/1.2180437 |
0.448 |
|
2006 |
Juneja JS, Wang PI, Karabacak T, Lu TM. Dielectric barriers, pore sealing, and metallization Thin Solid Films. 504: 239-242. DOI: 10.1016/J.Tsf.2005.09.164 |
0.366 |
|
2005 |
Jezewski C, Lanford WA, Wiegand CJ, Singh JP, Wang PI, Senkevich JJ, Lu TM. Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1850340 |
0.429 |
|
2005 |
Karabacak T, Wang PI, Wang GC, Lu TM. Phase transformation of single crystal β-tungsten nanorods at elevated temperatures Thin Solid Films. 493: 293-296. DOI: 10.1016/J.Tsf.2005.06.059 |
0.329 |
|
2004 |
Wang PI, Juneja JS, Murarka S, Lu TM, Ghoshal R. Novel epoxy siloxane polymer as low-k dielectric Materials Research Society Symposium Proceedings. 812: 31-36. DOI: 10.1557/Proc-812-F4.4 |
0.539 |
|
2004 |
Wang P, Zhao Y, Wang G, Lu T. Novel growth mechanism of single crystalline Cu nanorods by electron beam irradiation Nanotechnology. 15: 218-222. DOI: 10.1088/0957-4484/15/1/039 |
0.406 |
|
2004 |
Senkevich JJ, Wang PI, Wiegand CJ, Lu TM. Bias-temperature stability of ultrathin parylene-capped dielectrics: Influence of surface oxygen on copper ion diffusion Applied Physics Letters. 84: 2617-2619. DOI: 10.1063/1.1691488 |
0.457 |
|
2002 |
Zhao Y-, Ye D-, Wang P, Wang G-, Lu T-. FABRICATION OF Si NANOCOLUMNS AND Si SQUARE SPIRALS ON SELF-ASSEMBLED MONOLAYER COLLOID SUBSTRATES International Journal of Nanoscience. 1: 87-97. DOI: 10.1142/S0219581X02000073 |
0.321 |
|
2001 |
Wang PI, Murarka SP, Kaminski DA, Bedell S, Lanford WA. Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1387239 |
0.584 |
|
2001 |
Wang PI, Murarka SP, Yang GR, Lu TM. Evolution of the Cu-Al Alloy/SiO2 Interfaces during Bias Temperature Stressing Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1341247 |
0.58 |
|
2000 |
Wang P, Murarka SP, Yang G-, Barnat E, Lu T-, Chen Y-, Li X, Rajan K. Characterization of Cu-Al alloy/SiO 2 interface microstructure Mrs Proceedings. 615. DOI: 10.1557/Proc-615-G7.5.1 |
0.597 |
|
1999 |
Wang PI, Yang GR, Murarka SP, Lu TM. X-ray photoelectron spectroscopic studies of Cu-Al alloy/SiO2 interfaces Materials Research Society Symposium - Proceedings. 564: 347-352. DOI: 10.1557/Proc-564-347 |
0.627 |
|
1998 |
Wang PI, Murarka SP, Bedell S, Lanford WA. Homogenization of the bilayers of Cu-Al alloy and pure copper to produce Cu-0.3 at.% Al alloy films Materials Research Society Symposium - Proceedings. 514: 281-286. DOI: 10.1557/Proc-514-281 |
0.611 |
|
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