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Jianan Yang, Ph.D. - Publications

Affiliations: 
2001 Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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4 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Yang J, Denton J, Neudeck G. Ammonia nitrided isolation oxide for selective epitaxial growth technology to eliminate edge transistor effects of SOI and bulk N-channel MOSFETs Electronics Letters. 39: 1013. DOI: 10.1049/El:20030642  0.586
2002 Yang J, Neudeck GW, Denton JP. Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors Journal of Applied Physics. 91: 420. DOI: 10.1063/1.1417995  0.595
2001 Yang J, Denton JP, Neudeck GW. Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 19: 327-332. DOI: 10.1116/1.1358854  0.585
2000 Yang J, Neudeck GW, Denton JP. Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors Applied Physics Letters. 77: 4034-4036. DOI: 10.1063/1.1331641  0.595
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