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Hubert C. George, Ph.D. - Publications

Affiliations: 
2011 University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 George HC, Mądzik MT, Henry EM, Wagner AJ, Islam MM, Borjans F, Connors EJ, Corrigan J, Curry M, Harper MK, Keith D, Lampert L, Luthi F, Mohiyaddin FA, Murcia S, et al. 12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line. Nano Letters. PMID 39721970 DOI: 10.1021/acs.nanolett.4c05205  0.326
2024 Neyens S, Zietz OK, Watson TF, Luthi F, Nethwewala A, George HC, Henry E, Islam M, Wagner AJ, Borjans F, Connors EJ, Corrigan J, Curry MJ, Keith D, Kotlyar R, et al. Probing single electrons across 300-mm spin qubit wafers. Nature. 629: 80-85. PMID 38693414 DOI: 10.1038/s41586-024-07275-6  0.441
2019 Sabbagh D, Thomas N, Torres J, Pillarisetty R, Amin P, George H, Singh K, Budrevich A, Robinson M, Merrill D, Ross L, Roberts J, Lampert L, Massa L, Amitonov S, et al. Quantum Transport Properties of Industrial Si28/SiO228 Physical Review Applied. 12. DOI: 10.1103/Physrevapplied.12.014013  0.355
2017 Karbasian G, McConnell M, George H, Schneider L, Filmer M, Orlov A, Nazarov A, Snider G. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition Applied Sciences. 7: 246. DOI: 10.3390/App7030246  0.674
2011 George HC, Orlova TA, Orlov AO, Snider GL. Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3640752  0.69
2010 George HC, Orlov AO, Snider GL. Platinum single-electron transistors with tunnel barriers made by atomic layer deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6L6-C6L8. DOI: 10.1116/1.3511432  0.664
2010 George HC, Pierre M, Jehl X, Orlov AO, Sanquer M, Snider GL. Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization Applied Physics Letters. 96. DOI: 10.1063/1.3298557  0.626
2009 George HC, Orlov AO, Joyce RA, Tang Y, Snider GL. Effects of visible light illumination on the conductance of Al/Al O x single-electron transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 3158-3163. DOI: 10.1116/1.3259956  0.661
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