| Year |
Citation |
Score |
| 2025 |
Makhdoom S, Ren N, Wang C, Wu Y, Xu H, Wang J, Sheng K. Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress. Micromachines. 16. PMID 39858757 DOI: 10.3390/mi16010102 |
0.392 |
|
| 2023 |
Wang B, Xu H, Ren N, Wang H, Huang K, Sheng K. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines. 14. PMID 38138381 DOI: 10.3390/mi14122212 |
0.321 |
|
| 2021 |
Xu H, Ren N, Wu J, Zhu Z, Guo Q, Sheng K. The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes. Materials (Basel, Switzerland). 14. PMID 33572683 DOI: 10.3390/ma14030663 |
0.34 |
|
| 2019 |
Zhang M, Ren N, Guo Q, Zhu X, Zhang J, Sheng K. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module. Micromachines. 11. PMID 31861314 DOI: 10.3390/mi11010005 |
0.31 |
|
| 2019 |
Li H, Wang J, Ren N, Xu H, Sheng K. Investigation of 1200 V SiC MOSFETs' Surge Reliability. Micromachines. 10. PMID 31323884 DOI: 10.3390/mi10070485 |
0.395 |
|
| 2019 |
Ren N, Hu H, Lyu X, Wu J, Xu H, Li R, Zuo Z, Wang K, Sheng K. Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT Solid-State Electronics. 152: 33-40. DOI: 10.1016/J.Sse.2018.11.010 |
0.329 |
|
| 2018 |
Wang H, Wang J, Liu L, Li Y, Wang B, Xu H, Yang S, Sheng K. Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices Ieee Electron Device Letters. 39: 1900-1903. DOI: 10.1109/LED.2018.2874471 |
0.406 |
|
| 2018 |
Han S, Yang S, Sheng K. High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination Ieee Electron Device Letters. 39: 572-575. DOI: 10.1109/LED.2018.2808684 |
0.308 |
|
| 2017 |
Sheng K, Yang S, Guo Q, Xu H. Recent Progress in SiC and GaN Power Devices Ecs Transactions. 80: 37-51. DOI: 10.1149/08007.0037ECST |
0.347 |
|
| 2016 |
Hong WC, Ku CJ, Li R, Abbaslou S, Reyes P, Wang SY, Li G, Lu M, Sheng K, Lu Y. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. Scientific Reports. 6: 34169. PMID 27721484 DOI: 10.1038/Srep34169 |
0.356 |
|
| 2016 |
Chen S, Liu A, He J, Bai S, Sheng K. Design and Application of High-Voltage SiC JFET and Its Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 4: 780-789. DOI: 10.1109/JESTPE.2016.2562112 |
0.441 |
|
| 2016 |
Zhong X, Wang B, Sheng K. Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 231-234. DOI: 10.1109/ISPSD.2016.7520820 |
0.401 |
|
| 2016 |
Wang Z, Zhang J, Wu X, Sheng K. Evaluation of reverse recovery characteristic of silicon carbide metal-oxide-semiconductor field-effect transistor intrinsic diode Iet Power Electronics. 9: 969-976. DOI: 10.1049/iet-pel.2014.0965 |
0.303 |
|
| 2015 |
Chen S, He J, Sheng K. High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 253-256. DOI: 10.1109/ISPSD.2015.7123437 |
0.389 |
|
| 2015 |
Tang C, Xie G, Sheng K. Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 233-236. DOI: 10.1109/ISPSD.2015.7123432 |
0.407 |
|
| 2015 |
Dong Z, Wu X, Sheng K, Zhang J. Impact of common source inductance on switching loss of SiC MOSFET 2015 Ieee 2nd International Future Energy Electronics Conference, Ifeec 2015. DOI: 10.1109/IFEEC.2015.7361607 |
0.373 |
|
| 2015 |
Tang C, Hou M, Li X, Xie G, Sheng K. CMOS-compatible ehancement-mode GaN-on-Si MOS-HEMT with high breakdown voltage (930V) using thermal oxidation and TMAH wet etching 2015 Ieee Energy Conversion Congress and Exposition, Ecce 2015. 396-399. DOI: 10.1109/ECCE.2015.7309715 |
0.348 |
|
| 2015 |
Chen S, He J, Wang H, Sheng K. Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2015: 2488-2491. DOI: 10.1109/APEC.2015.7104699 |
0.374 |
|
| 2015 |
Tang C, Xie G, Sheng K. Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT Microelectronics Reliability. 55: 347-351. DOI: 10.1016/j.microrel.2014.10.018 |
0.353 |
|
| 2014 |
Ren N, Sheng K. An analytical model with 2-d effects for 4H-SiC trenched junction barrier schottky diodes Ieee Transactions On Electron Devices. 61: 4158-4165. DOI: 10.1109/TED.2014.2365519 |
0.347 |
|
| 2014 |
Ren N, Wang J, Sheng K. Design and experimental study of 4H-Sic trenched junction barrier schottky diodes Ieee Transactions On Electron Devices. 61: 2459-2465. DOI: 10.1109/TED.2014.2320979 |
0.384 |
|
| 2013 |
Chen C, Xie G, Tang C, Sheng K. Investigation of gate degradation characteristics of ALGaN/GaN HEMTs under PWM stress Advanced Materials Research. 732: 1255-1260. DOI: 10.4028/www.scientific.net/AMR.732-733.1255 |
0.361 |
|
| 2013 |
Cai C, Zhou W, Sheng K. Characteristics and application of normally-off SiC-JFETs in converters without antiparallel diodes Ieee Transactions On Power Electronics. 28: 4850-4860. DOI: 10.1109/TPEL.2012.2237417 |
0.339 |
|
| 2013 |
Tang C, Sheng K, Xie G. Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si 2013 International Conference On Communications, Circuits and Systems, Icccas 2013. 2: 353-357. DOI: 10.1109/ICCCAS.2013.6765355 |
0.316 |
|
| 2013 |
Cheng S, Huang Y, Wu X, Sheng K. A 3600 V/80 a single external-driver series connected circuit with three Silicon Carbide MOSFETs 2013 Ieee Energy Conversion Congress and Exposition, Ecce 2013. 3217-3223. DOI: 10.1109/ECCE.2013.6647122 |
0.383 |
|
| 2013 |
Ren N, Sheng K, Zhang J, Peng F. Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes 2013 Ieee Energy Conversion Congress and Exposition, Ecce 2013. 2871-2876. DOI: 10.1109/ECCE.2013.6647074 |
0.34 |
|
| 2012 |
Sun X, Guan Y, Li F, Li X, Wang X, Guan Z, Sheng K, Yu L, Liu Z. Effects of rat cytomegalovirus on the nervous system of the early rat embryo. Virologica Sinica. 27: 234-40. PMID 22899431 DOI: 10.1007/s12250-012-3250-0 |
0.63 |
|
| 2010 |
Yu L, Cheung KP, Tilak V, Dunne G, Matocha K, Campbell J, Suehle JS, Sheng K. Wafer-level Hall measurement on SiC MOSFET Materials Science Forum. 645: 979-982. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.979 |
0.343 |
|
| 2010 |
Yu LC, Cheung KP, Dunne G, Matocha K, Suehle JS, Sheng K. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices Materials Science Forum. 805-808. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.805 |
0.373 |
|
| 2010 |
Yu LC, Dunne GT, Matocha KS, Cheung KP, Suehle JS, Sheng K. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments Ieee Transactions On Device and Materials Reliability. 10: 418-426. DOI: 10.1109/Tdmr.2010.2077295 |
0.377 |
|
| 2009 |
Yu LC, Cheung KP, Suehle JS, Campbell JP, Sheng K, Lelis AJ, Ryu SH. Channel Hot-Carrier Effect of 4H-SiC MOSFET Materials Science Forum. 813-816. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.813 |
0.477 |
|
| 2009 |
Sheng K, Zhang Y, Yu L, Su M, Zhao JH. High-Frequency Switching of SiC High-Voltage LJFET Ieee Transactions On Power Electronics. 24: 271-277. DOI: 10.1109/Tpel.2008.2005984 |
0.684 |
|
| 2009 |
Sheng K. Maximum junction temperatures of SiC power devices Ieee Transactions On Electron Devices. 56: 337-342. DOI: 10.1109/Ted.2008.2010605 |
0.442 |
|
| 2009 |
Pyo S, Sheng K. Junction temperature dynamics of power MOSFET and SiC diode 2009 Ieee 6th International Power Electronics and Motion Control Conference, Ipemc '09. 269-273. DOI: 10.1109/IPEMC.2009.5157397 |
0.374 |
|
| 2008 |
Zhang Y, Sheng K, Su M, Zhao JH, Alexandrov P, Fursin L. Development of High Temperature Lateral HV and LV JFETs in 4H-SiC Materials Science Forum. 1091-1094. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1091 |
0.472 |
|
| 2008 |
Zhang Y, Sheng K, Su M, Zhao JH, Alexandrov P, Li X, Fursin L, Weiner M. Development of 4H-SiC LJFET-Based Power IC Ieee Transactions On Electron Devices. 55: 1934-1945. DOI: 10.1109/Ted.2008.926676 |
0.442 |
|
| 2008 |
Yu L, Sheng K. Modeling and optimal device design for 4H-SiC super-junction devices Ieee Transactions On Electron Devices. 55: 1961-1969. DOI: 10.1109/Ted.2008.926648 |
0.677 |
|
| 2008 |
Zhao JH, Sheng K, Zhang Y, Su M. Current Status and Future Prospects of SiC Power JFETs and ICs Ieice Transactions On Electronics. 91: 1031-1041. DOI: 10.1093/Ietele/E91-C.7.1031 |
0.391 |
|
| 2008 |
Sheng K, Zhang Y, Su M, Zhao JH, Li X, Alexandrov P, Fursin L. Demonstration of the first SiC power integrated circuit Solid-State Electronics. 52: 1636-1646. DOI: 10.1016/J.Sse.2008.06.037 |
0.377 |
|
| 2008 |
Yu LC, Sheng K, Zhao JH. Modeling and design of a monolithically integrated power converter on SiC Solid-State Electronics. 52: 1625-1630. DOI: 10.1016/J.Sse.2008.06.020 |
0.49 |
|
| 2007 |
Zhang Y, Sheng K, Su M, Zhao JH, Alexandrov P, Fursin L. 1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications Ieee Electron Device Letters. 28: 404-407. DOI: 10.1109/Led.2007.895448 |
0.486 |
|
| 2006 |
Zhang JH, Wu J, Alexandrov P, Burke T, Sheng K, Zhao JH. 1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor Materials Science Forum. 1417-1420. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1417 |
0.417 |
|
| 2006 |
Zhao JH, Alexandrov P, Li YZ, Li LX, Sheng K, Lebron-Velilla R. Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs Materials Science Forum. 1191-1194. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1191 |
0.486 |
|
| 2006 |
Su M, Sheng K, Li Y, Zhang Y, Wu J, Zhao J, Zhang J, Li L. 430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET Ieee Electron Device Letters. 27: 834-836. DOI: 10.1109/Led.2006.883057 |
0.496 |
|
| 2005 |
Zhao JH, Sheng K, Lebron-Velilla RC. Silicon carbide schottky barrier diode International Journal of High Speed Electronics and Systems. 15: 821-866. DOI: 10.1142/S0129156405003430 |
0.391 |
|
| 2005 |
Sheng K, Hu S. Design criteria of high-voltage lateral RESURF JFETs on 4H-SiC Ieee Transactions On Electron Devices. 52: 2300-2308. DOI: 10.1109/Ted.2005.856177 |
0.521 |
|
| 2005 |
Yu LC, Sheng K. Breaking the theoretical limit of SiC unipolar power device - A simulation study 2005 International Semiconductor Device Research Symposium. 2005: 42-43. DOI: 10.1016/j.sse.2006.04.038 |
0.368 |
|
| 2005 |
Sannuti P, Li X, Yan F, Sheng K, Zhao J. Channel electron mobility in 4H–SiC lateral junction field effect transistors Solid-State Electronics. 49: 1900-1904. DOI: 10.1016/J.Sse.2005.10.027 |
0.327 |
|
| 2004 |
Udugampola U, McMahon R, Udrea F, Sheng K, Amaratunga G, Narayanan E, Hardikar S, De Souza M. Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits Iee Proceedings - Circuits, Devices and Systems. 151: 203. DOI: 10.1049/IP-CDS:20040447 |
0.328 |
|
| 2004 |
Hu S, Sheng K. A new edge termination technique for SiC power devices Solid-State Electronics. 48: 1861-1866. DOI: 10.1016/J.Sse.2004.05.027 |
0.442 |
|
| 2003 |
Hu S, Sheng K. A new edge termination technique for SiC power devices 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 122-123. DOI: 10.1109/ISDRS.2003.1272024 |
0.326 |
|
| 2003 |
Sheng K. MOS-Controlled Diode (MCD) on Silicon-On-Insulator (SOI) Iecon Proceedings (Industrial Electronics Conference). 3: 2602-2606. DOI: 10.1109/IECON.2003.1280657 |
0.36 |
|
| 2003 |
Yokoyama Y, Li X, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K. A field effect transistor using highly nitrogen-doped CVD diamond for power device applications Applied Surface Science. 216: 483-489. DOI: 10.1016/S0169-4332(03)00402-1 |
0.497 |
|
| 2002 |
Udrea F, Udugampola UNK, Sheng K, McMahon RA, Amaratunga GAJ, Narayanan EMS, Souza MMD, Hardikar S. Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET) Ieee Electron Device Letters. 23: 725-727. DOI: 10.1109/Led.2002.805757 |
0.425 |
|
| 2001 |
He X, Sheng K, Williams BW, Qian Z, Finney SJ. A composite soft-switching inverter configuration with unipolar pulsewidth modulation control Ieee Transactions On Industrial Electronics. 48: 118-126. DOI: 10.1109/41.904571 |
0.419 |
|
| 2001 |
Huang S, Sheng K, Udrea F, Amaratunga G. A dynamic n-buffer insulated gate bipolar transistor Solid-State Electronics. 45: 173-182. DOI: 10.1016/S0038-1101(00)00239-2 |
0.493 |
|
| 2001 |
Huang S, Amaratunga G, Udrea F, Sheng K, Waind P, Coulbeck L, Taylor P. A dual-channel IEGT Microelectronics Journal. 32: 755-761. DOI: 10.1016/S0026-2692(01)00054-4 |
0.401 |
|
| 2001 |
Garner D, Udrea F, Lim H, Ensell G, Popescu A, Sheng K, Milne W. Silicon-on-insulator power integrated circuits Microelectronics Journal. 32: 517-526. DOI: 10.1016/S0026-2692(01)00024-6 |
0.458 |
|
| 2001 |
Xiangning H, Yuwen Y, Sheng K, Williams BW, Finney SJ. Composite soft switching configuration for inverters using bridge leg modules Journal of Electronics (China). 18: 61-69. DOI: 10.1007/S11767-001-0009-4 |
0.411 |
|
| 2000 |
Sheng K, Williams BW, Finney SJ. A review of IGBT models Ieee Transactions On Power Electronics. 15: 1250-1266. DOI: 10.1109/63.892840 |
0.315 |
|
| 2000 |
Sheng K, Finney SJ, Williams BW. Thermal stability of IGBT high-frequency operation Ieee Transactions On Industrial Electronics. 47: 9-16. DOI: 10.1109/41.824018 |
0.353 |
|
| 2000 |
He X, Sheng K, Finney SJ, Qian Z, Williams BW. New soft switching techniques for three phase voltage source inverters International Journal of Electronics. 87: 605-622. DOI: 10.1080/002072100132020 |
0.453 |
|
| 2000 |
Udrea F, Milne V, Lim H, Popescu A, Sheng K, Garner D. SOI power devices Electronics & Communication Engineering Journal. 12: 27-40. DOI: 10.1049/Ecej:20000104 |
0.511 |
|
| 2000 |
Sheng K, Udrea F, Amaratunga GAJ. Optimum carrier distribution of the IGBT Solid-State Electronics. 44: 1573-1583. DOI: 10.1016/S0038-1101(00)00103-9 |
0.359 |
|
| 1999 |
Sheng K, Finney SJ, Williams BW. A new analytical IGBT model with improved electrical characteristics Ieee Transactions On Power Electronics. 14: 98-107. DOI: 10.1109/63.737597 |
0.381 |
|
| 1998 |
McNeill N, Sheng K, Williams BW, Finney SJ. Assessment of off-state negative gate voltage requirements for IGBT's Ieee Transactions On Power Electronics. 13: 436-440. DOI: 10.1109/63.668104 |
0.353 |
|
| 1998 |
Sheng K, Williams B, Finney S. Maximum operating junction temperature of PT and NPT IGBTs Electronics Letters. 34: 2276. DOI: 10.1049/El:19981580 |
0.337 |
|
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