| Year |
Citation |
Score |
| 2020 |
Holloway JW, Dogiamis GC, Shin S, Han R. 220-to-330-GHz Manifold Triplexer With Wide Stopband Utilizing Ridged Substrate Integrated Waveguides Ieee Transactions On Microwave Theory and Techniques. 68: 3428-3438. DOI: 10.1109/Tmtt.2020.2997367 |
0.41 |
|
| 2020 |
Yi X, Wang C, Chen X, Wang J, Grajal J, Han R. A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture Ieee Journal of Solid-State Circuits. 1-1. DOI: 10.1109/Jssc.2020.3020291 |
0.454 |
|
| 2020 |
Khan MIW, Ibrahim MI, Juvekar CS, Jung W, Yazicigil RT, Chandrakasan AP, Han R. CMOS THz-ID: A 1.6-mm² Package-Less Identification Tag Using Asymmetric Cryptography and 260-GHz Far-Field Backscatter Communication Ieee Journal of Solid-State Circuits. 1-1. DOI: 10.1109/Jssc.2020.3015717 |
0.352 |
|
| 2019 |
Kim M, Wang C, Hu Z, Han R. Chip-Scale Terahertz Carbonyl Sulfide Clock: An Overview and Recent Studies on Long-Term Frequency Stability of OCS Transitions Ieee Transactions On Terahertz Science and Technology. 9: 349-363. DOI: 10.1109/Tthz.2019.2918436 |
0.414 |
|
| 2019 |
Naghavi SH, Taba MT, Han R, Aseeri MA, Cathelin A, Afshari E. Filling the Gap With Sand: When CMOS Reaches THz Ieee Solid-State Circuits Magazine. 11: 33-42. DOI: 10.1109/Mssc.2019.2922888 |
0.589 |
|
| 2019 |
Han R. IMS2019 Hackathon: Everyday Microwave Ieee Microwave Magazine. 20: 54-54. DOI: 10.1109/Mmm.2019.2891809 |
0.325 |
|
| 2019 |
Han R, Hu Z, Wang C, Holloway J, Yi X, Kim M, Mawdsley J. Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet Ieee Microwave Magazine. 20: 80-93. DOI: 10.1109/Mmm.2019.2891379 |
0.452 |
|
| 2019 |
K.O. K, Choi W, Zhong Q, Sharma N, Zhang Y, Han R, Ahmad Z, Kim D, Kshattry S, Medvedev IR, Lary DJ, Nam H, Raskin P, Kim I. Opening Terahertz for Everyday Applications Ieee Communications Magazine. 57: 70-76. DOI: 10.1109/Mcom.2019.1800909 |
0.504 |
|
| 2019 |
Hu Z, Wang C, Han R. A 32-Unit 240-GHz Heterodyne Receiver Array in 65-nm CMOS With Array-Wide Phase Locking Ieee Journal of Solid-State Circuits. 54: 1216-1227. DOI: 10.1109/Jssc.2019.2893231 |
0.49 |
|
| 2019 |
Wang C, Yi X, Mawdsley J, Kim M, Hu Z, Zhang Y, Perkins B, Han R. Chip-Scale Molecular Clock Ieee Journal of Solid-State Circuits. 54: 914-926. DOI: 10.1109/Jssc.2018.2880920 |
0.502 |
|
| 2018 |
Wang C, Perkins B, Wang Z, Han R. Molecular Detection for Unconcentrated Gas With ppm Sensitivity Using 220-to-320-GHz Dual-Frequency-Comb Spectrometer in CMOS. Ieee Transactions On Biomedical Circuits and Systems. 12: 709-721. PMID 29877833 DOI: 10.1109/Tbcas.2018.2812818 |
0.438 |
|
| 2018 |
Hu Z, Kaynak M, Han R. High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure Ieee Journal of Solid-State Circuits. 53: 1313-1327. DOI: 10.1109/Jssc.2017.2786682 |
0.503 |
|
| 2017 |
Holloway JW, Boglione L, Hancock TM, Han R. A Fully Integrated Broadband Sub-mmWave Chip-to-Chip Interconnect Ieee Transactions On Microwave Theory and Techniques. 65: 2373-2386. DOI: 10.1109/Tmtt.2017.2660491 |
0.429 |
|
| 2017 |
Wang C, Han R. Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity Ieee Journal of Solid-State Circuits. 52: 3361-3372. DOI: 10.1109/Jssc.2017.2755693 |
0.571 |
|
| 2016 |
Kim DY, Park S, Han R, O KK. Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging Ieee Transactions On Terahertz Science and Technology. DOI: 10.1109/Tthz.2015.2513061 |
0.526 |
|
| 2016 |
Jiang C, Mostajeran A, Han R, Emadi M, Sherry H, Cathelin A, Afshari E. A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS Ieee Journal of Solid-State Circuits. 51: 2596-2609. DOI: 10.1109/Jssc.2016.2599533 |
0.659 |
|
| 2015 |
Han R, Jiang C, Mostajeran A, Emadi M, Aghasi H, Sherry H, Cathelin A, Afshari E. A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2015.2471847 |
0.653 |
|
| 2013 |
Han R, Afshari E. A high-power broadband passive terahertz frequency doubler in CMOS Ieee Transactions On Microwave Theory and Techniques. 61: 1150-1160. DOI: 10.1109/Tmtt.2013.2243465 |
0.665 |
|
| 2013 |
Han R, Afshari E. A CMOS high-power broadband 260-GHz radiator array for spectroscopy Ieee Journal of Solid-State Circuits. 48: 3090-3104. DOI: 10.1109/Jssc.2013.2272864 |
0.669 |
|
| 2013 |
Han R, Zhang Y, Kim Y, Kim DY, Shichijo H, Afshari E, O KK. Active terahertz imaging using schottky diodes in CMOS: Array and 860-ghz pixel Ieee Journal of Solid-State Circuits. 48: 2296-2308. DOI: 10.1109/Jssc.2013.2269856 |
0.627 |
|
| 2012 |
Lee C, Choi W, Han R, Shichijo H, Kenneth KO. Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages Ieee Electron Device Letters. 33: 752-754. DOI: 10.1109/Led.2012.2190258 |
0.473 |
|
| 2011 |
Han R, Zhang Y, Coquillat D, Videlier H, Knap W, Brown E, O KK. A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS Ieee Journal of Solid-State Circuits. 46: 2602-2612. DOI: 10.1109/Jssc.2011.2165234 |
0.527 |
|
| 2010 |
Seok E, Shim D, Mao C, Han R, Sankaran S, Cao C, Knap W, Kenneth KO. Progress and Challenges Towards Terahertz CMOS Integrated Circuits Ieee Journal of Solid-State Circuits. 45: 1554-1564. DOI: 10.1109/Jssc.2010.2049793 |
0.54 |
|
| 2010 |
Wu H, Han R, Lerdsitsomboon W, Cao C, Kenneth KO. Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission Ieee Journal of Solid-State Circuits. 45: 1072-1079. DOI: 10.1109/Jssc.2010.2043879 |
0.459 |
|
| 2009 |
Sankaran S, Cao C, Seok E-, Shim D, Mao C, Han R. Millimeter Wave To Terahertz In Cmos International Journal of High Speed Electronics and Systems. 19: 55-67. DOI: 10.1142/S0129156409006084 |
0.539 |
|
| Show low-probability matches. |