| Year |
Citation |
Score |
| 2020 |
King C, Schoenfield JS, Calderón MJ, Koiller B, Saraiva A, Hu X, Jiang H, Friesen M, Coppersmith SN. Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices Physical Review B. 101. DOI: 10.1103/Physrevb.101.155411 |
0.308 |
|
| 2019 |
Dusko A, Koiller B, Lewenkopf C. Disordered Si:P nanostructures as switches and wires for nanodevices Physical Review B. 99. DOI: 10.1103/Physrevb.99.205422 |
0.364 |
|
| 2018 |
Abadillo-Uriel JC, Koiller B, Calderón MJ. Two-dimensional semiconductors pave the way towards dopant-based quantum computing. Beilstein Journal of Nanotechnology. 9: 2668-2673. PMID 30416918 DOI: 10.3762/Bjnano.9.249 |
0.336 |
|
| 2018 |
Dusko A, Delgado A, Saraiva A, Koiller B. Adequacy of Si:P chains as Fermi–Hubbard simulators Npj Quantum Information. 4: 1-5. DOI: 10.1038/S41534-017-0051-1 |
0.357 |
|
| 2017 |
Saraiva A, Júnior FSA, de Melo E Souza R, Pena AP, Monken CH, Santos MF, Koiller B, Jorio A. Photonic Counterparts of Cooper Pairs. Physical Review Letters. 119: 193603. PMID 29219533 DOI: 10.1103/Physrevlett.119.193603 |
0.308 |
|
| 2016 |
Baena A, Saraiva AL, Menezes MG, Koiller B. Donors in Ge as qubits —Establishing physical attributes Epl. 116: 20002. DOI: 10.1209/0295-5075/116/20002 |
0.372 |
|
| 2016 |
Dusko A, Saraiva AL, Koiller B. Mitigating valley-driven localization in atomically thin dopant chains in Si Physical Review B. 94: 115425. DOI: 10.1103/Physrevb.94.115425 |
0.327 |
|
| 2016 |
Saraiva AL, Salfi J, Bocquel J, Voisin B, Rogge S, Capaz RB, Calderón MJ, Koiller B. Donor wave functions in Si gauged by STM images Physical Review B. 93: 45303. DOI: 10.1103/Physrevb.93.045303 |
0.302 |
|
| 2015 |
Saraiva AL, Baena A, Calderón MJ, Koiller B. Theory of one and two donors in silicon. Journal of Physics: Condensed Matter. 27: 154208-154208. PMID 25783857 DOI: 10.1088/0953-8984/27/15/154208 |
0.324 |
|
| 2014 |
Gonzalez-Zalba MF, Saraiva A, Calderón MJ, Heiss D, Koiller B, Ferguson AJ. An exchange-coupled donor molecule in silicon. Nano Letters. 14: 5672-5676. PMID 25230333 DOI: 10.1021/Nl5023942 |
0.323 |
|
| 2014 |
Dusko A, Saraiva AL, Koiller B. Splitting valleys in Si/SiO 2 : Identification and control of interface states Physical Review B. 89: 205307. DOI: 10.1103/Physrevb.89.205307 |
0.372 |
|
| 2013 |
Stinchcombe RB, de Queiroz SL, Cunha MA, Koiller B. Driven flow with exclusion and transport in graphenelike structures. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 042133. PMID 24229141 DOI: 10.1103/Physreve.88.042133 |
0.309 |
|
| 2013 |
Zhang L, Luo JW, Saraiva A, Koiller B, Zunger A. Genetic design of enhanced valley splitting towards a spin qubit in silicon. Nature Communications. 4: 2396. PMID 24013452 DOI: 10.1038/Ncomms3396 |
0.336 |
|
| 2013 |
Saraiva A, Baena A, 'on MC, Koiller B. Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO$_2$ interface Bulletin of the American Physical Society. 2013. DOI: 10.13039/501100002322 |
0.303 |
|
| 2012 |
Culcer D, Saraiva AL, Koiller B, Hu X, Das Sarma S. Valley-based noise-resistant quantum computation using Si quantum dots. Physical Review Letters. 108: 126804. PMID 22540611 DOI: 10.1103/Physrevlett.108.126804 |
0.307 |
|
| 2012 |
Baena A, Saraiva AL, Koiller B, Calderón MJ. Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO2interface Physical Review B. 86. DOI: 10.1103/Physrevb.86.035317 |
0.349 |
|
| 2011 |
Saraiva AL, Calderón MJ, Capaz RB, Hu X, Das Sarma S, Koiller B. Intervalley coupling for interface-bound electrons in silicon: An effective mass study Physical Review B. 84. DOI: 10.1103/Physrevb.84.155320 |
0.386 |
|
| 2011 |
Assali LVC, Petrilli HM, Capaz RB, Koiller B, Hu X, Das Sarma S. Hyperfine interactions in silicon quantum dots Physical Review B. 83. DOI: 10.1103/Physrevb.83.165301 |
0.366 |
|
| 2010 |
Saraiva AL, Koiller B, Friesen M. Extended interface states enhance valley splitting in Si/ SiO2 Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.245314 |
0.358 |
|
| 2010 |
Calderón MJ, Verduijn J, Lansbergen GP, Tettamanzi GC, Rogge S, Koiller B. Heterointerface effects on the charging energy of the shallow D? ground state in silicon : Role of dielectric mismatch Physical Review B. 82: 75317. DOI: 10.1103/Physrevb.82.075317 |
0.325 |
|
| 2010 |
Koiller B, Robbins MO. Growth and morphology transitions in anisotropic disordered media Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.064202 |
0.536 |
|
| 2009 |
Saraiva AL, Calderón MJ, Hu X, Das Sarma S, Koiller B. Physical mechanisms of interface-mediated intervalley coupling in Si Physical Review B. 80. DOI: 10.1103/Physrevb.80.081305 |
0.357 |
|
| 2009 |
Calderón MJ, Saraiva A, Koiller B, Sarma SD. Quantum control and manipulation of donor electrons in Si-based quantum computing Journal of Applied Physics. 105. DOI: 10.1063/1.3124084 |
0.355 |
|
| 2008 |
Calderón MJ, Koiller B, Sarma SD. Model of valley interference effects on a donor electron close to a Si/SiO 2 interface Physical Review B. 77: 155302. DOI: 10.1103/Physrevb.77.155302 |
0.348 |
|
| 2008 |
Koiller B. Quantum electronics: Hybrid electron control Nature Physics. 4: 590-591. DOI: 10.1038/Nphys1045 |
0.327 |
|
| 2007 |
Saraiva AL, Calderon MJ, Koiller B. Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures Physical Review B. 76: 233302. DOI: 10.1103/Physrevb.76.233302 |
0.328 |
|
| 2007 |
Calderón MJ, Koiller B, Sarma SD. Proposal for electron spin relaxation measurements using double-donor excited states in Si quantum computer architectures Physical Review B. 75: 161304. DOI: 10.1103/Physrevb.75.161304 |
0.354 |
|
| 2007 |
Calderón MJ, Koiller B, Sarma SD. External field control of donor electron exchange at the Si/Si O2 interface Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.125311 |
0.369 |
|
| 2007 |
Santoprete R, Kratzer P, Scheffler M, Capaz RB, Koiller B. Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study Journal of Applied Physics. 102: 23711. DOI: 10.1063/1.2757205 |
0.355 |
|
| 2006 |
Calderón MJ, Koiller B, Hu X, Das Sarma S. Quantum control of donor electrons at the Si-SiO2 interface. Physical Review Letters. 96: 096802. PMID 16606294 DOI: 10.1103/Physrevlett.96.096802 |
0.36 |
|
| 2006 |
Calderón MJ, Koiller B, Sarma SD. Magnetic-field-assisted manipulation and entanglement of Si spin qubits Physical Review B. 74: 81302. DOI: 10.1103/Physrevb.74.081302 |
0.349 |
|
| 2006 |
Calderón MJ, Koiller B, Sarma SD. Exchange coupling in semiconductor nanostructures : Validity and limitations of the Heitler-London approach Physical Review B. 74: 45310. DOI: 10.1103/Physrevb.74.045310 |
0.359 |
|
| 2006 |
Chaves CM, Paiva T, d’Albuquerque e Castro J, Hébert F, Scalettar RT, Batrouni GG, Koiller B. Magnetic susceptibility of exchange-disordered antiferromagnetic finite chains Physical Review B. 73. DOI: 10.1103/Physrevb.73.104410 |
0.316 |
|
| 2006 |
Koiller B, Hu X, Das Sarma S. Electric-field driven donor-based charge qubits in semiconductors Physical Review B. 73. DOI: 10.1103/Physrevb.73.045319 |
0.346 |
|
| 2005 |
Koiller B, Hu X, Capaz RB, Martins AS, Das Sarma S. Silicon-based spin and charge quantum computation Anais Da Academia Brasileira De CiêNcias. 77: 201-222. DOI: 10.1590/S0001-37652005000200002 |
0.359 |
|
| 2005 |
Hu X, Koiller B, Sarma SD. Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235332 |
0.351 |
|
| 2005 |
Sarma SD, Sousa RD, Hu X, Koiller B. Spin quantum computation in silicon nanostructures Solid State Communications. 133: 737-746. DOI: 10.1016/J.Ssc.2004.12.037 |
0.344 |
|
| 2004 |
Koiller B, Capaz RB, Hu X, Das Sarma S. Shallow-donor wave functions and donor-pair exchange in silicon:Ab initiotheory and floating-phase Heitler-London approach Physical Review B. 70. DOI: 10.1103/Physrevb.70.115207 |
0.377 |
|
| 2004 |
Martins AS, Capaz RB, Koiller B. Electric-field control and adiabatic evolution of shallow donor impurities in silicon Physical Review B. 69: 85320. DOI: 10.1103/Physrevb.69.085320 |
0.334 |
|
| 2003 |
Koiller B, Hu X, Drew HD, Sarma SD. Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture. Physical Review Letters. 90: 067401. PMID 12633326 DOI: 10.1103/Physrevlett.90.067401 |
0.326 |
|
| 2003 |
Santoprete R, Koiller B, Capaz RB, Kratzer P, Liu QKK, Scheffler M. Tight-binding study of the influence of the strain on the electronic properties of InAs 'GaAs quantum dots Physical Review B. 68. DOI: 10.1103/Physrevb.68.235311 |
0.342 |
|
| 2002 |
Koiller B, Hu X, Das Sarma S. Exchange in silicon-based quantum computer architecture. Physical Review Letters. 88: 027903. PMID 11801039 DOI: 10.1103/Physrevlett.88.027903 |
0.361 |
|
| 2002 |
Ribeiro FJ, Capaz RB, Koiller B. Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells Brazilian Journal of Physics. 32: 318-320. DOI: 10.1590/S0103-97332002000200018 |
0.344 |
|
| 2002 |
Koiller B, Hu X, Das Sarma S. Strain effects on silicon donor exchange: Quantum computer architecture considerations Physical Review B. 66. DOI: 10.1103/Physrevb.66.115201 |
0.328 |
|
| 2002 |
Martins AS, Menchero JG, Capaz RB, Koiller B. Atomistic description of shallow levels in semiconductors Physical Review B. 65: 245205. DOI: 10.1103/Physrevb.65.245205 |
0.304 |
|
| 2002 |
Ribeiro FJ, Capaz RB, Koiller B. Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells Physica Status Solidi (B) Basic Research. 232: 148-151. DOI: 10.1002/1521-3951(200207)232:1<148::Aid-Pssb148>3.0.Co;2-I |
0.345 |
|
| 2001 |
Dargam TG, Capaz RB, Koiller B. Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures Physical Review B. 64. DOI: 10.1103/Physrevb.64.245327 |
0.322 |
|
| 2000 |
Koiller B, Robbins MO. Morphology transitions in three-dimensional domain growth with Gaussian random fields Physical Review B - Condensed Matter and Materials Physics. 62: 5771-5778. DOI: 10.1103/Physrevb.62.5771 |
0.523 |
|
| 2000 |
Menchero JG, Dargam TG, Koiller B. Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices Physical Review B. 61: 13021-13025. DOI: 10.1103/Physrevb.61.13021 |
0.307 |
|
| 2000 |
de Aguiar M, Brandi H, Koiller B, Mucciolo E. Chaos in one-dimensional lattices under intense laser fields The European Physical Journal B. 14: 329-335. DOI: 10.1007/S100510050137 |
0.33 |
|
| 1999 |
Dargam TG, Capaz RB, Koiller B. Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase Brazilian Journal of Physics. 29: 834-838. DOI: 10.1590/S0103-97331999000400048 |
0.328 |
|
| 1999 |
Koiller B, Capaz RB, Chacham H. Segregation, interface morphology, and the optical properties of GaAs / AlAs quantum wells: A theoretical study Physical Review B. 60: 1787-1791. DOI: 10.1103/Physrevb.60.1787 |
0.302 |
|
| 1999 |
Capaz RB, Dargam TG, Martins AS, Chacham H, Koiller B. Semiconductor Hetrostructures with Non‐Ideal Interfaces: Electronic Structure and Optical Properties Physica Status Solidi (a). 173: 235-246. DOI: 10.1002/(Sici)1521-396X(199905)173:1<235::Aid-Pssa235>3.0.Co;2-W |
0.35 |
|
| 1998 |
Dargam TG, Koiller B. Interface roughness and the optical properties of quantum wells Solid State Communications. 105: 211-214. DOI: 10.1016/S0038-1098(97)10126-0 |
0.361 |
|
| 1994 |
Chacham H, Falicov LM, Koiller B. Orientational disorder and the band gap of solid molecular hydrogen under pressure. Physical Review. B, Condensed Matter. 50: 7195-7198. PMID 9974687 DOI: 10.1103/Physrevb.50.7195 |
0.506 |
|
| 1994 |
Nolle CS, Koiller B, Martys N, Robbins MO. Effect of quenched disorder on moving interfaces in two dimensions Physica a: Statistical Mechanics and Its Applications. 205: 342-354. DOI: 10.1016/0378-4371(94)90512-6 |
0.466 |
|
| 1993 |
Nolle CS, Koiller B, Martys N, Robbins MO. Morphology and dynamics of interfaces in random two-dimensional media. Physical Review Letters. 71: 2074-2077. PMID 10054576 DOI: 10.1103/Physrevlett.71.2074 |
0.517 |
|
| 1993 |
Capaz RB, Koiller B. Partial-ordering effects in InxGa1-xP. Physical Review B. 47: 4044-4047. PMID 10006528 DOI: 10.1103/Physrevb.47.4044 |
0.315 |
|
| 1992 |
Koiller B, Ji H, Robbins MO. Effect of disorder and lattice type on domain-wall motion in two dimensions. Physical Review. B, Condensed Matter. 46: 5258-5265. PMID 10004302 DOI: 10.1103/Physrevb.46.5258 |
0.539 |
|
| 1992 |
Koiller B, Ji H, Robbins MO. Fluid wetting properties and the invasion of square networks. Physical Review. B, Condensed Matter. 45: 7762-7767. PMID 10000584 DOI: 10.1103/Physrevb.45.7762 |
0.457 |
|
| 1992 |
Capaz RB, Weid JPvd, Koiller B. Physical criteria for the direct‐to‐indirect gap crossover in AlxGa1−xAs alloys Applied Physics Letters. 60: 704-706. DOI: 10.1063/1.106543 |
0.318 |
|
| 1991 |
Koiller B, Osório R, Falicov LM. Gap properties of AlnGa8-nAs8 ordered compounds. Physical Review. B, Condensed Matter. 43: 4170-4173. PMID 9997766 DOI: 10.1103/Physrevb.43.4170 |
0.493 |
|
| 1991 |
Koiller B, Osrio R, Falicov LM. Gap properties of AlnGa8-nAs8 ordered compounds Physical Review B. 43: 4170-4173. DOI: 10.1103/PhysRevB.43.4170 |
0.42 |
|
| 1991 |
Ochi CLC, Koiller B. Alloy Broadening of Semiconductor Impurity Lines Second-Neighbor Effects Physica Status Solidi B-Basic Solid State Physics. 166: 151-159. DOI: 10.1002/Pssb.2221660116 |
0.314 |
|
| 1990 |
Koiller B, Davidovich MA, Falicov LM. Erratum: Small-crystal approach to ordered semiconductor compounds Physical Review. B, Condensed Matter. 42: 3194. PMID 9995823 DOI: 10.1103/Physrevb.42.3194.2 |
0.474 |
|
| 1990 |
Koiller B, Davidovich MA, Falicov LM. Small-crystal approach to ordered semiconductor compounds. Physical Review. B, Condensed Matter. 41: 3670-3677. PMID 9994167 DOI: 10.1103/Physrevb.41.3670 |
0.486 |
|
| 1989 |
Koiller B, Robbins MO. Elastic energies and order in epitaxial Si-Ge alloys. Physical Review. B, Condensed Matter. 40: 12554-12557. PMID 9991901 DOI: 10.1103/Physrevb.40.12554 |
0.516 |
|
| 1988 |
Davidovich MA, Koiller B, Osório R, Robbins MO. Electronic theory of ordering in (GaAs)1-xGe Physical Review. B, Condensed Matter. 38: 10524-10532. PMID 9945907 DOI: 10.1103/Physrevb.38.10524 |
0.558 |
|
| 1987 |
Melo CARS, Brandi HS, Koiller B. Random soliton distribution in trans-polyacetylene Solid State Communications. 61: 171-176. DOI: 10.1016/0038-1098(87)90024-X |
0.324 |
|
| 1986 |
Jalbert G, Koiller B, Brandi HS, Zagury N. Dressed bands approach for multi-photon transitions in solids Journal of Physics C: Solid State Physics. 19: 5745-5756. DOI: 10.1088/0022-3719/19/28/024 |
0.341 |
|
| 1985 |
Robbins MO, Koiller B. Localization properties of random and partially ordered one-dimensional systems. Physical Review. B, Condensed Matter. 32: 4576-4583. PMID 9937639 DOI: 10.1103/Physrevb.32.4576 |
0.509 |
|
| 1985 |
Koiller B, Davidovich MA, Osório R. Correlation effects in metastable (Ga As)1−x Ge2x alloys Solid State Communications. 55: 861-864. DOI: 10.1016/0038-1098(85)90194-2 |
0.339 |
|
| 1983 |
Robbins MO, Koiller B. Renormalization-group methods for the spectra of disordered chains Physical Review B. 27: 7703-7715. DOI: 10.1103/Physrevb.27.7703 |
0.484 |
|
| 1983 |
Koiller B, Falicov LM. Theory of inelastic electron scattering from antiferromagnetic NiO: Surface and bulk effects Physical Review B. 27: 346-353. DOI: 10.1103/Physrevb.27.346 |
0.486 |
|
| 1983 |
Koiller B, Falicov LM. Theory of electron scattering from a Heisenberg antiferromagnet: Surface and bulk effects Journal of Magnetism and Magnetic Materials. 31: 907-908. DOI: 10.1016/0304-8853(83)90734-5 |
0.497 |
|
| 1983 |
Chaves CM, Koiller B. Renormalization group treatment for spin waves in the randomly disordered Heisenberg chain Journal of Magnetism and Magnetic Materials. 38: 183-186. DOI: 10.1016/0304-8853(83)90043-4 |
0.331 |
|
| 1983 |
Koiller B, Robbins MO, Davidovich MA, Gonçalves da Silva CET. Renormalization group treatment for the electronic spectrum of partially ordered one-dimensional alloys Solid State Communications. 45: 955-959. DOI: 10.1016/0038-1098(83)90964-X |
0.557 |
|
| 1982 |
Brandi HS, Koiller B, Barros HGPLd, Miranda LCM, Castro JJ. Erratum: Theory of electron-hydrogen-atom collisions in the presence of a laser field Physical Review A. 25: 1808-1808. DOI: 10.1103/Physreva.17.1900 |
0.303 |
|
| 1982 |
Pinto MJ, Koiller B. Optical properties of crystals with impurities Journal of Physics C: Solid State Physics. 15: 7229-7244. DOI: 10.1088/0022-3719/15/35/020 |
0.313 |
|
| 1981 |
Silva CETGd, Koiller B. Local density of states in a disordered chain: A renormalization group approach Solid State Communications. 40: 215-219. DOI: 10.1016/0038-1098(81)90743-2 |
0.332 |
|
| 1980 |
Silva CETGd, Koiller B. Dynamic response of a disordered ferromagnetic chain: Alloy transfer matrix approximation Solid State Communications. 36: 313-316. DOI: 10.1016/0038-1098(80)90061-7 |
0.309 |
|
| 1976 |
Koiller B, Falicov LM. Vacancy states in rock-salt ionic compounds Physical Review B. 13: 5511-5517. DOI: 10.1103/Physrevb.13.5511 |
0.465 |
|
| 1976 |
Weid JPVD, Carmo LCSD, Santos RRD, Koiller B, Ribeiro SC, Chaves AS. Electron Paramagnetic Resonance Studies Of Phase Transitions In Kcn Le Journal De Physique Colloques. 37. DOI: 10.1051/Jphyscol:1976759 |
0.308 |
|
| 1975 |
Koiller B, Falicov LM. Magnetic properties of the transition-metal monoxides: NiO Journal of Physics C: Solid State Physics. 8: 695-707. DOI: 10.1088/0022-3719/8/5/015 |
0.412 |
|
| 1975 |
Falicov LM, Koiller B. Low temperature conductivity of transition-metal oxides Journal of Solid State Chemistry. 12: 349-354. DOI: 10.1016/0022-4596(75)90339-4 |
0.309 |
|
| Show low-probability matches. |
