| Year |
Citation |
Score |
| 2019 |
Sirikumara HI, Morshed M, Jameson C, Jayasekera T. Dopant-induced indirect-direct transition and semiconductor-semimetal transition of bilayer SnSe Journal of Applied Physics. 126: 224301. DOI: 10.1063/1.5128337 |
0.4 |
|
| 2017 |
Sirikumara HI, Jayasekera T. Tunable Indirect-Direct Transition of Few-Layer SnSe via Interface Engineering. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 28737499 DOI: 10.1088/1361-648X/Aa81A6 |
0.43 |
|
| 2016 |
Sirikumara HI, Putz E, Al-Abboodi M, Jayasekera T. Symmetry induced semimetal-semiconductor transition in doped graphene. Scientific Reports. 6: 19115. PMID 26781061 DOI: 10.1038/Srep19115 |
0.424 |
|
| 2016 |
Sirikumara HI, Jayasekera T. Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface Journal of Applied Physics. 119: 215305. DOI: 10.1063/1.4953217 |
0.425 |
|
| 2014 |
Sirikumara HI, Bohorquez-Ballen J, Jayasekera T. Ge cages at the SiC/graphene interface: A first principles calculation Journal of Crystal Growth. 393: 145-149. DOI: 10.1016/J.Jcrysgro.2013.11.051 |
0.423 |
|
| 2013 |
Muchharla B, Pathak A, Liu Z, Song L, Jayasekera T, Kar S, Vajtai R, Balicas L, Ajayan PM, Talapatra S, Ali N. Tunable electronics in large-area atomic layers of boron-nitrogen-carbon. Nano Letters. 13: 3476-81. PMID 23859076 DOI: 10.1021/Nl400721Y |
0.43 |
|
| 2013 |
Mao R, Kong BD, Gong C, Xu S, Jayasekera T, Cho K, Kim KW. First-principles calculation of thermal transport in metal/graphene systems Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165410 |
0.38 |
|
| 2012 |
Calzolari A, Jayasekera T, Kim KW, Nardelli MB. Ab initio thermal transport properties of nanostructures from density functional perturbation theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 492204. PMID 23164749 DOI: 10.1088/0953-8984/24/49/492204 |
0.447 |
|
| 2012 |
Jayasekera T, Kim KW, Buongiorno Nardelli M. Electronic and structural properties of turbostratic epitaxial graphene on the 6H-SiC (000-1) surface Materials Science Forum. 717: 595-600. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.595 |
0.43 |
|
| 2012 |
Sandin A, Jayasekera T, Rowe JE, Kim KW, Buongiorno Nardelli M, Dougherty DB. Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.125410 |
0.356 |
|
| 2012 |
Mao R, Kong BD, Kim KW, Jayasekera T, Calzolari A, Buongiorno Nardelli M. Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Applied Physics Letters. 101. DOI: 10.1063/1.4752437 |
0.392 |
|
| 2012 |
Sidorov AN, Gaskill K, Buongiorno Nardelli M, Tedesco JL, Myers-Ward RL, Eddy CR, Jayasekera T, Wook Kim K, Jayasingha R, Sherehiy A, Stallard R, Sumanasekera GU. Publisher’s Note: “Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC” [J. Appl. Phys. 111, 113706 (2012)] Journal of Applied Physics. 112: 029908. DOI: 10.1063/1.4742134 |
0.329 |
|
| 2012 |
Sidorov AN, Gaskill K, Buongiorno Nardelli M, Tedesco JL, Myers-Ward RL, Eddy CR, Jayasekera T, Kim KW, Jayasingha R, Sherehiy A, Stallard R, Sumanasekera GU. Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001̄) 6 H-SiC Journal of Applied Physics. 111. DOI: 10.1063/1.4725413 |
0.45 |
|
| 2011 |
Jayasekera T, Xu S, Kim KW, Nardelli MB. Electronic properties of the graphene/6H-SiC(0001̄) interface: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035442 |
0.459 |
|
| 2010 |
Chen Y, Jayasekera T, Calzolari A, Kim KW, Nardelli MB. Thermoelectric properties of graphene nanoribbons, junctions and superlattices. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 372202. PMID 21403189 DOI: 10.1088/0953-8984/22/37/372202 |
0.448 |
|
| 2010 |
Jayasekera T, Kong BD, Kim KW, Buongiorno Nardelli M. Band engineering and magnetic doping of epitaxial graphene on SiC (0001). Physical Review Letters. 104: 146801. PMID 20481952 DOI: 10.1103/Physrevlett.104.146801 |
0.421 |
|
| 2009 |
Li J, Jayasekera T, Meunier V, Mintmire JW. Electronic transport of silicon nanowires with surface defects International Journal of Quantum Chemistry. 109: 3705-3710. DOI: 10.1002/Qua.22342 |
0.412 |
|
| 2008 |
Jayasekera T, Pillalamarri PK, Mintmire JW, Meunier V. Effect of phase-breaking events on electron transport in mesoscopic and nanodevices International Journal of Quantum Chemistry. 108: 2896-2905. DOI: 10.1002/Qua.21834 |
0.43 |
|
| 2007 |
Jayasekera T, Mintmire JW. Transport in multiterminal graphene nanodevices. Nanotechnology. 18: 424033. PMID 21730465 DOI: 10.1088/0957-4484/18/42/424033 |
0.511 |
|
| 2007 |
Jayasekera T, Mullen K, Morrison MA. Cooling electrons in semiconductor devices: A model of evaporative emission Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.035316 |
0.638 |
|
| 2007 |
Jayasekera T, Monigold MS, Elizondo SL, Mintmire JW. First-principles properties of organic polymer photovoltaic materials International Journal of Quantum Chemistry. 107: 3120-3125. DOI: 10.1002/Qua.21443 |
0.404 |
|
| 2007 |
Jayasekera T, Mintmire JW. Lattice vacancy effects on electron transport in multiterminal graphene nanodevices International Journal of Quantum Chemistry. 107: 3071-3076. DOI: 10.1002/Qua.21437 |
0.518 |
|
| 2006 |
Jayasekera T, Morrison MA, Mullen K. R -matrix theory for magnetotransport properties in semiconductor devices Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.235308 |
0.639 |
|
| 2006 |
Jayasekera T, Goel N, Morrison MA, Mullen K. Theoretical calculation of magneto-transport properties in semiconductor devices and comparison to experimental data Physica E: Low-Dimensional Systems and Nanostructures. 34: 584-587. DOI: 10.1016/J.Physe.2006.03.156 |
0.641 |
|
| 2005 |
Jayasekera T, Mullen K, Morrison MA. Evaporative cooling of electrons in semiconductor devices Aip Conference Proceedings. 772: 1279-1280. DOI: 10.1063/1.1994578 |
0.643 |
|
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