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Ronald A. Arif, P.D. - Publications

Affiliations: 
2008 Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Optics Physics
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61 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Lu J, Su J, Arif R, Papasouliotis GD, Paranjpe A. Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor Mrs Advances. 2: 329-334. DOI: 10.1557/Adv.2017.174  0.336
2016 Berkman EA, Lee SM, Ramos F, Tucker E, Arif RA, Armour EA, Papasouliotis GD. Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth Proceedings of Spie - the International Society For Optical Engineering. 9748. DOI: 10.1117/12.2213309  0.361
2016 Su J, Posthuma N, Wellekens D, Saripalli YN, Decoutere S, Arif R, Papasouliotis GD. Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates Journal of Electronic Materials. 45: 6346-6354. DOI: 10.1007/S11664-016-5029-9  0.33
2016 Su J, Armour E, Lee SM, Arif R, Papasouliotis GD. Uniform growth of III-nitrides on 200mm silicon substrates using a single wafer rotating disk MOCVD reactor Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532708  0.345
2014 Aleksiejunas R, Gelžinyte K, Nargelas S, Jarašiunas K, Vengris M, Armour EA, Byrnes DP, Arif RA, Lee SM, Papasouliotis GD. Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures Applied Physics Letters. 104. DOI: 10.1063/1.4862026  0.466
2013 Armour EA, Byrnes D, Arif RA, Lee SM, Berkman EA, Papasouliotis GD, Li C, Stokes EB, Hefti R, Moyer P. Effect of growth pressure and gas-phase chemistry on the optical quality of InGaN/GaN multi-quantum wells Materials Research Society Symposium Proceedings. 1538: 341-351. DOI: 10.1557/Opl.2013.505  0.317
2013 Li C, Stokes EB, Hefti R, Moyer P, Armour EA, Arif R, Byrnes D, Lee SM, Papasouliotisd GD. PL spatial variation in InGaN/GaN MQWs studied by confocal microscopy and TRPL spectroscopy Ecs Journal of Solid State Science and Technology. 2: R262-R266. DOI: 10.1149/2.003312Jss  0.324
2013 Li C, Stokes EB, Hefti R, Moyer P, Arif R, Byrnes D, Lee SM, Armour E. Confocal microscopy and TRPL spectroscopy study on spatial variation of PL in blue-emitting InGaN/GaN MQWs Ecs Transactions. 53: 43-51. DOI: 10.1149/05302.0043ecst  0.34
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252  0.784
2010 Zhao H, Liu G, Arif RA, Tansu N. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Solid-State Electronics. 54: 1119-1124. DOI: 10.1016/j.sse.2010.05.019  0.728
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express. 17: 13747-57. PMID 19654782 DOI: 10.1364/Oe.17.013747  0.825
2009 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808600  0.801
2009 Zhao H, Arif RA, Tansu N. Staggered InGaN quantum well diode lasers emitting at 500 nm Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.808561  0.755
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  0.853
2009 Zhao H, Arif RA, Tansu N. Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm Ieee Journal On Selected Topics in Quantum Electronics. 15: 1104-1114. DOI: 10.1109/Jstqe.2009.2016576  0.772
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Zhao H, Gilchrist JF, Tansu N. Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses Ieee Journal On Selected Topics in Quantum Electronics. 15: 1218-1225. DOI: 10.1109/Jstqe.2009.2015580  0.821
2009 Zhao H, Arif RA, Ee YK, Tansu N. Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes Ieee Journal of Quantum Electronics. 45: 66-78. DOI: 10.1109/Jqe.2008.2004000  0.839
2009 Zhao H, Liu G, Arif RA, Tansu N. Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378014  0.754
2009 Zhao HP, Liu GY, Li XH, Arif RA, Huang GS, Poplawsky JD, Tafon Penn S, Dierolf V, Tansu N. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime Iet Optoelectronics. 3: 283-295. DOI: 10.1049/Iet-Opt.2009.0050  0.799
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.814
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.835
2008 Tansu N, Arif RA, Zhao H, Huang GS, Ee YK. Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7058. DOI: 10.1117/12.802482  0.866
2008 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763973  0.808
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.763804  0.808
2008 Arif RA, Zhao H, Ee YK, Tansu N. Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763362  0.844
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Nonlinear power dependence for efficient THz generation from InGaN/GaN multiple quantum wells Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 788-789. DOI: 10.1109/LEOS.2008.4688857  0.6
2008 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers Ieee Journal of Quantum Electronics. 44: 732-739. DOI: 10.1109/Jqe.2008.924242  0.752
2008 Arif RA, Zhao H, Ee YK, Tansu N. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 44: 573-580. DOI: 10.1109/Jqe.2008.918309  0.855
2008 Tansu N, Zhao H, Arif RA, Ee YK, Liu G, Li X, Huang GS. Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781335  0.842
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Optimization and fabrication of III-nitride light emitting diodes with self-assembled colloidal-based convex microlens arrays 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781319  0.786
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Observation of enhanced THz emission from InGaN/GaN multiple quantum wells Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551802  0.666
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Size effects and light extraction efficiency optimization of III-nitride light emitting diodes with SiO2 / polystyrene microlens arrays 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551237  0.832
2008 Arif RA, Zhao H, Tansu N. InGaN-GaNAs type-II 'W' quantum well lasers for emission at 450-nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551201  0.743
2008 Zhao H, Arif RA, Huang GS, Ee YK, Tansu N. Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551199  0.818
2008 Arif RA, Zhao H, Ee YK, Penn ST, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551108  0.852
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Jamil M, Arif RA, Tansu N. Resonant Raman scattering of coherent picosecond pulses by one and two longitudinal-optical phonons in GaN film grown on silicon (111) substrate Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551067  0.505
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Jamil M, Arif RA, Tansu N, Khurgin JB. Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate Applied Physics Letters. 93. DOI: 10.1063/1.3030883  0.679
2008 Zhao H, Arif RA, Tansu N. Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers Journal of Applied Physics. 104. DOI: 10.1063/1.2970107  0.74
2008 Arif RA, Zhao H, Tansu N. Type-II InGaN-GaNAs quantum wells for lasers applications Applied Physics Letters. 92. DOI: 10.1063/1.2829600  0.732
2008 Ee YK, Zhao H, Arif RA, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 310: 2320-2325. DOI: 10.1016/J.Jcrysgro.2007.12.022  0.845
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm Optical and Quantum Electronics. 40: 301-306. DOI: 10.1007/S11082-007-9177-2  0.824
2008 Arif RA, Ee YK, Tansu N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm Physica Status Solidi (a) Applications and Materials Science. 205: 96-100. DOI: 10.1002/Pssa.200777478  0.849
2008 Jamil M, Arif RA, Ee YK, Tong H, Higgins JB, Tansu N. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates Physica Status Solidi (a) Applications and Materials Science. 205: 1619-1624. DOI: 10.1002/Pssa.200723591  0.772
2008 Arif RA, Zhao H, Ee YK, Tafon Penn S, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered ingan quantum wells light emitting diodes Optics Infobase Conference Papers.  0.834
2008 Mu X, Ding YJ, Arif RA, Jamil M, Tansu N. Observation of enhanced THz emission from InGaN/GaN multiple quantum wells Optics Infobase Conference Papers.  0.474
2007 Ee YK, Gupta YP, Arif RA, Tansu N. Quantum 3-D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum dots nanostructures Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700775  0.771
2007 Arif RA, Tummidi RS, Yik KE, Tansu N. Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the mid-IR regime Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700767  0.622
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm 2007 International Conference On Numerical Simulation of Semiconductor Optoelectronic Devices - Nusod'07. 69-70. DOI: 10.1109/NUSOD.2007.4349028  0.828
2007 Ee YK, Arif RA, Tansu N, Li H, Chan HM, Vinci RP, Capek P, Jha NK, Dierolf V. Improved photoluminescence of InGaN quantum wells grown on nano-patterned AGOG sapphire substrate by metalorganie vapor phase epitaxy Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 902-903. DOI: 10.1109/LEOS.2007.4382701  0.784
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 376-377. DOI: 10.1109/LEOS.2007.4382435  0.837
2007 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Radiative efficiency of InGaAs/InGaAsP/GaAs quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 313-314. DOI: 10.1109/LEOS.2007.4382403  0.737
2007 Ee YK, Kumnorkaew P, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells LEDs using SiO2 microspheres Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453005  0.832
2007 Arif RA, Ee YK, Tansu N. Enhancement of radiative efficiency of nitride-based LEDs via staggered InGaN quantum wells emitting at 420-500 nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452515  0.829
2007 Ee YK, Arif RA, Jamil M, Tansu N. MOCVD epitaxy and optical properties of self-assembled InGaN quantum dots via Stranski-Kastranow growth mode emitting at 520-nm Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452499  0.794
2007 Ee YK, Arif RA, Tansu N, Kumnorkaew P, Gilchrist JF. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays Applied Physics Letters. 91. DOI: 10.1063/1.2816891  0.821
2007 Arif RA, Ee YK, Tansu N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2775334  0.848
2006 Arif RA, Tansu N. Interdiffused SbN-based quantum well on GaAs for 1300-1550 nm diode lasers Materials Research Society Symposium Proceedings. 891: 559-564. DOI: 10.1557/Proc-0891-Ee11-09  0.692
2006 Arif RA, Kim NH, Mawst LJ, Tansu N. Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition Materials Research Society Symposium Proceedings. 891: 65-70. DOI: 10.1557/Proc-0891-Ee02-05  0.752
2006 Arif RA, Ee YK, Tansu N. Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.646174  0.807
2006 Arif RA, Ee YK, Tansu N. Polarization field engineering with type-II InGaN-GaNAs quantum well for improved nitride gain media at 420-550 nm Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628309  0.829
2005 Arif RA, Tansu N. Interdiffused InGaAsSbN quantum wells on GaAs for 1300-1550 nm lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 171-182. DOI: 10.1117/12.591023  0.645
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