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Yik K. Ee, Ph.D. - Publications

Affiliations: 
2010 Electrical Engineering Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering
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49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541  0.83
2011 Li XH, Ee YK, Song R, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875980  0.836
2011 Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901  0.85
2011 Li XH, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios Ieee Photonics Journal. 3: 489-499. DOI: 10.1109/Jphot.2011.2150745  0.832
2011 Cao W, Biser JM, Ee YK, Li XH, Tansu N, Chan HM, Vinci RP. Dislocation structure of GaN films grown on planar and nano-patterned sapphire Journal of Applied Physics. 110. DOI: 10.1063/1.3631823  0.677
2011 Li XH, Ee YK, Song R, Tansu N. Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes 2011 Conference On Lasers and Electro-Optics: Laser Science to Photonic Applications, Cleo 2011.  0.655
2010 Zhao H, Liu G, Ee YK, Li XH, Tong H, Zhang J, Huang GS, Tansu N. Novel device concepts for high-efficiency InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842869  0.823
2010 Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7617. DOI: 10.1117/12.841503  0.611
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887  0.8
2010 Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Journal of Crystal Growth. 312: 1311-1315. DOI: 10.1016/J.Jcrysgro.2009.10.029  0.736
2010 Zhao H, Liu G, Li XH, Ee YK, HuaTong, Zhang J, Huang GS, Tansu N. Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.719
2010 Ee YK, Li XH, Biser JM, Cao W, Chan HM, Vinci RP, Tansu N. Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.45
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express. 17: 13747-57. PMID 19654782 DOI: 10.1364/Oe.17.013747  0.836
2009 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808600  0.813
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  0.848
2009 Ee YK, Biser JM, Cao W, Chan HM, Vinci RP, Tansu N. Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode Ieee Journal On Selected Topics in Quantum Electronics. 15: 1066-1072. DOI: 10.1109/Jstqe.2009.2017208  0.685
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Zhao H, Gilchrist JF, Tansu N. Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses Ieee Journal On Selected Topics in Quantum Electronics. 15: 1218-1225. DOI: 10.1109/Jstqe.2009.2015580  0.837
2009 Zhao H, Arif RA, Ee YK, Tansu N. Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes Ieee Journal of Quantum Electronics. 45: 66-78. DOI: 10.1109/Jqe.2008.2004000  0.825
2009 Ee YK, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode Optics Infobase Conference Papers.  0.646
2009 Ee YK, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode Optics Infobase Conference Papers.  0.442
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.823
2009 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes Optics Infobase Conference Papers.  0.844
2008 Kumnorkaew P, Ee YK, Tansu N, Gilchrist JF. Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 12150-7. PMID 18533633 DOI: 10.1021/La801100G  0.612
2008 Tansu N, Arif RA, Zhao H, Huang GS, Ee YK. Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7058. DOI: 10.1117/12.802482  0.857
2008 Ee YK, Kumnorkaew P, Tong H, Arif RA, Gilchrist JF, Tansu N. Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763973  0.812
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.763804  0.786
2008 Arif RA, Zhao H, Ee YK, Tansu N. Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm Proceedings of Spie - the International Society For Optical Engineering. 6910. DOI: 10.1117/12.763362  0.832
2008 Arif RA, Zhao H, Ee YK, Tansu N. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes Ieee Journal of Quantum Electronics. 44: 573-580. DOI: 10.1109/Jqe.2008.918309  0.846
2008 Tansu N, Zhao H, Arif RA, Ee YK, Liu G, Li X, Huang GS. Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781335  0.836
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Optimization and fabrication of III-nitride light emitting diodes with self-assembled colloidal-based convex microlens arrays 2008 Ieee Photonicsglobal At Singapore, Ipgc 2008. DOI: 10.1109/IPGC.2008.4781319  0.799
2008 Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N. Size effects and light extraction efficiency optimization of III-nitride light emitting diodes with SiO2 / polystyrene microlens arrays 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551237  0.841
2008 Zhao H, Arif RA, Huang GS, Ee YK, Tansu N. Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551199  0.799
2008 Arif RA, Zhao H, Ee YK, Penn ST, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551108  0.845
2008 Ee YK, Zhao H, Arif RA, Jamil M, Tansu N. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy Journal of Crystal Growth. 310: 2320-2325. DOI: 10.1016/J.Jcrysgro.2007.12.022  0.838
2008 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm Optical and Quantum Electronics. 40: 301-306. DOI: 10.1007/S11082-007-9177-2  0.804
2008 Arif RA, Ee YK, Tansu N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm Physica Status Solidi (a) Applications and Materials Science. 205: 96-100. DOI: 10.1002/Pssa.200777478  0.846
2008 Jamil M, Arif RA, Ee YK, Tong H, Higgins JB, Tansu N. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates Physica Status Solidi (a) Applications and Materials Science. 205: 1619-1624. DOI: 10.1002/Pssa.200723591  0.775
2008 Arif RA, Zhao H, Ee YK, Tafon Penn S, Dierolf V, Tansu N. Spontaneous recombination rate and luminescence efficiency of staggered ingan quantum wells light emitting diodes Optics Infobase Conference Papers.  0.825
2007 Ee YK, Gupta YP, Arif RA, Tansu N. Quantum 3-D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum dots nanostructures Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.700775  0.749
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of strain compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm 2007 International Conference On Numerical Simulation of Semiconductor Optoelectronic Devices - Nusod'07. 69-70. DOI: 10.1109/NUSOD.2007.4349028  0.81
2007 Ee YK, Arif RA, Tansu N, Li H, Chan HM, Vinci RP, Capek P, Jha NK, Dierolf V. Improved photoluminescence of InGaN quantum wells grown on nano-patterned AGOG sapphire substrate by metalorganie vapor phase epitaxy Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 902-903. DOI: 10.1109/LEOS.2007.4382701  0.772
2007 Zhao H, Arif RA, Ee YK, Tansu N. Optical gain analysis of staggered InGaN quantum well active regions for lasers emitting at 420-500 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 376-377. DOI: 10.1109/LEOS.2007.4382435  0.819
2007 Ee YK, Kumnorkaew P, Arif RA, Gilchrist JF, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells LEDs using SiO2 microspheres Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453005  0.837
2007 Arif RA, Ee YK, Tansu N. Enhancement of radiative efficiency of nitride-based LEDs via staggered InGaN quantum wells emitting at 420-500 nm Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452515  0.813
2007 Ee YK, Arif RA, Jamil M, Tansu N. MOCVD epitaxy and optical properties of self-assembled InGaN quantum dots via Stranski-Kastranow growth mode emitting at 520-nm Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452499  0.776
2007 Ee YK, Arif RA, Tansu N, Kumnorkaew P, Gilchrist JF. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays Applied Physics Letters. 91. DOI: 10.1063/1.2816891  0.821
2007 Arif RA, Ee YK, Tansu N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2775334  0.842
2006 Arif RA, Ee YK, Tansu N. Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.646174  0.792
2006 Arif RA, Ee YK, Tansu N. Polarization field engineering with type-II InGaN-GaNAs quantum well for improved nitride gain media at 420-550 nm Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628309  0.816
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