☰

John F. Conley - Publications

Affiliations: 
Electrical Engineering Oregon State University, Corvallis, OR 
Area:
high dielectric materials, thin films
Website:
http://web.engr.oregonstate.edu/~jconley/people.html
Tree Info Similar researchers PubMed Report error

81 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Holden K, Dezelah CL, Conley JF. Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide using Ni(DAD) and Ozone. Acs Applied Materials & Interfaces. PMID 31345025 DOI: 10.1021/Acsami.9B08926  0.408
2019 Jenkins M, Austin DZ, Conley JF, Fan J, Groot CHd, Jiang L, Fan Y, Ali R, Ghosh G, Orlowski M, King SW. Review—Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0161910Jss  0.303
2019 Holden KEK, Conley JF. Characterization of atomic layer deposited semiconducting Co3O4 Journal of Vacuum Science and Technology. 37: 20903. DOI: 10.1116/1.5064469  0.379
2019 Jenkins MA, Austin DZ, Holden KEK, Allman D, Conley JF. Laminate Al 2 O 3 /Ta 2 O 5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications Ieee Transactions On Electron Devices. 66: 5260-5265. DOI: 10.1109/Ted.2019.2948140  0.336
2018 Septevani AA, Evans DAC, Hosseinmardi A, Martin DJ, Simonsen J, Conley JF, Annamalai PK. Atomic Layer Deposition of Metal Oxide on Nanocellulose for Enabling Microscopic Characterization of Polymer Nanocomposites. Small (Weinheim An Der Bergstrasse, Germany). e1803439. PMID 30328269 DOI: 10.1002/Smll.201803439  0.363
2018 Septevani AA, Evans DAC, Hosseinmardi A, Martin DJ, Simonsen J, Conley JF, Annamalai PK. Polymer Nanocomposites Characterization: Atomic Layer Deposition of Metal Oxide on Nanocellulose for Enabling Microscopic Characterization of Polymer Nanocomposites (Small 46/2018) Small. 14: 1870217. DOI: 10.1002/Smll.201870217  0.305
2016 Buesch C, Smith SW, Eschbach P, Conley JF, Simonsen J. The Microstructure of Cellulose Nanocrystal Aerogels as Revealed by Transmission Electron Microscope Tomography. Biomacromolecules. PMID 27500897 DOI: 10.1021/Acs.Biomac.6B00764  0.328
2016 Murari NM, Mansergh RH, Huang Y, Kast MG, Keszler DA, Conley JF. Aerosol jet fog (ajFOG) deposition of aluminum oxide phosphate thin films from an aqueous fog Journal of Materials Research. 31: 3303-3312. DOI: 10.1557/Jmr.2016.341  0.354
2016 Valdivia A, Tweet DJ, Conley JF. Atomic layer deposition of two dimensional MoS2 on 150 mm substrates Journal of Vacuum Science and Technology. 34: 21515. DOI: 10.1116/1.4941245  0.389
2015 Austin DZ, Allman D, Price D, Hose S, Conley JF. Plasma Enhanced Atomic Layer Deposition of Al 2 O 3 /SiO 2 MIM Capacitors Ieee Electron Device Letters. 36: 496-498. DOI: 10.1109/Led.2015.2412685  0.319
2015 Lampert LF, Barnum A, Smith SW, Conley JF, Jiao J. Phase transitions and in situ dynamics of crystal grain formation of alumina nanotubes templated by vertically aligned carbon nanotubes Rsc Advances. 5: 68251-68259. DOI: 10.1039/C5Ra12337B  0.304
2014 Smith SW, Buesch C, Matthews DJ, Simonsen J, Conley JF. Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4882239  0.35
2014 Smith SW, Wang W, Keszler DA, Conley JF. Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4874806  0.411
2014 Alimardani N, McGlone JM, Wager JF, Conley JF. Conduction processes in metal-insulator-metal diodes with Ta 2O5 and Nb2O5 insulators deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4843555  0.348
2014 Austin DZ, Allman D, Price D, Hose S, Saly M, Conley JF. Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 01A113. DOI: 10.1116/1.4840835  0.398
2014 Alimardani N, Conley JF. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling Applied Physics Letters. 105: 82902. DOI: 10.1063/1.4893735  0.373
2014 Alimardani N, King SW, French BL, Tan C, Lampert BP, Conley JF. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes Journal of Applied Physics. 116: 24508. DOI: 10.1063/1.4889798  0.382
2014 Lampert L, Smith S, Timonen B, Conley JF, Jiao J. Varying phases of alumina nanowires templated by vertically aligned carbon nanotubes grown via atomic layer deposition Microscopy and Microanalysis. 20: 1972-1973. DOI: 10.1017/S1431927614011593  0.311
2013 Rajachidambaram JS, Murali S, Conley JF, Golledge SL, Herman GS. Bipolar resistive switching in an amorphous zinc tin oxide memristive device Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4767124  0.3
2013 Murali S, Rajachidambaram JS, Han SY, Chang CH, Herman GS, Conley JF. Resistive switching in zinc-tin-oxide Solid-State Electronics. 79: 248-252. DOI: 10.1016/J.Sse.2012.06.016  0.337
2012 Smith SW, Chan H, Buesch C, Simonsen J, Conley JF. Improved temperature stability of atomic layer deposition coated cellulose nanocrystal aerogels Materials Research Society Symposium Proceedings. 1465: 44-49. DOI: 10.1557/Opl.2012.1073  0.351
2012 Alimardani N, Cowell EW, Wager JF, Conley JF, Evans DR, Chin M, Kilpatrick SJ, Dubey M. Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al 2O 3 tunnel barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3658380  0.318
2011 Waggoner T, Triska J, Hoshino K, Wager JF, Conley JF. Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3609254  0.425
2011 Herman GS, Rajachidambaram JS, Rajachidambaram MS, Han SY, Chang CH, Murali S, Conley JF. Transparent oxide semiconductors: Recent material developments and new applications Ieee Photonic Society 24th Annual Meeting, Pho 2011. 555-556. DOI: 10.1109/Pho.2011.6110668  0.374
2010 Huang CC, Pelatt BD, Conley JF. Directed integration of ZnO nanobridge sensors using photolithographically patterned carbonized photoresist. Nanotechnology. 21: 195307. PMID 20407146 DOI: 10.1088/0957-4484/21/19/195307  0.304
2010 Triska J, Conley JF, Presley R, Wager JF. Bias stress stability of zinc-tin-oxide thin-film transistors with Al 2O3 gate dielectrics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3455494  0.426
2010 Conley JF. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors Ieee Transactions On Device and Materials Reliability. 10: 460-475. DOI: 10.1109/Tdmr.2010.2069561  0.433
2009 Conley J, Mason AD, Waggoner TJ, Smith SW, Gibbons B, Price D, Allman D. Hydrothermal Synthesis of Zinc Oxide Nanowires on Kevlar using ALD and Sputtered ZnO Seed Layers Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa06-38  0.312
2009 Lenahan PM, Ryan JT, Cochrane CJ, Conley JF. Defects in HfO2 based dielectric gate stacks Materials Research Society Symposium Proceedings. 1155: 3-13. DOI: 10.1557/Proc-1155-C12-01  0.609
2009 Triska J, Conley JF, Presley R, Wager JF. Bias stability of zinc-tin-oxide thin film transistors with Al 2O3 gate dielectrics Ieee International Integrated Reliability Workshop Final Report. 86-89. DOI: 10.1109/IRWS.2009.5383025  0.303
2008 Lenahan PM, Knowlton B, Conley JF, Tonti B, Suehle J, Grasser T. Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop Ieee Transactions On Device and Materials Reliability. 8: 490-490. DOI: 10.1109/Tdmr.2008.2006011  0.474
2006 Green JM, Dong L, Gutu T, Jiao J, Conley JF, Ono Y. ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties Journal of Applied Physics. 99: 94308. DOI: 10.1063/1.2194112  0.302
2006 Goncher G, Solanki R, Carruthers JR, Conley J, Ono Y. p-n junctions in silicon nanowires Journal of Electronic Materials. 35: 1509-1512. DOI: 10.1007/S11664-006-0140-Y  0.346
2005 Dong L, Bush J, Chirayos V, Solanki R, Jiao J, Ono Y, Conley JF, Ulrich BD. Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects. Nano Letters. 5: 2112-5. PMID 16218748 DOI: 10.1021/Nl051650+  0.306
2005 Ryan JT, Lenahan PM, Kang AY, Conley JF, Bersuker G, Lysaght P. Identification of the atomic scale defects involved in radiation damage in HfO 2 based MOS devices Ieee Transactions On Nuclear Science. 52: 2272-2275. DOI: 10.1109/Tns.2005.860665  0.435
2005 Conley JF, Bersuker G, Lenahan PM. Introduction to the special issue on high-k dielectric reliability Ieee Transactions On Device and Materials Reliability. 5: 3-4. DOI: 10.1109/TDMR.2005.847999  0.423
2005 Conley JF, Stecker L, Ono Y. Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer Nanotechnology. 16: 292-296. DOI: 10.1088/0957-4484/16/2/020  0.361
2004 Senzaki Y, Park S, Tweet D, Conley JF, Ono Y. Ozone-Based Atomic Layer Deposition of HfO 2 and Hf x Si 1-x O 2 and Film Characterization Mrs Proceedings. 811. DOI: 10.1557/Proc-811-D7.4  0.354
2004 Gao W, Conley JF, Ono Y. NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 84: 4666-4668. DOI: 10.1063/1.1759780  0.362
2004 Conley JF, Ono Y, Tweet DJ. Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing Applied Physics Letters. 84: 1913-1915. DOI: 10.1063/1.1667619  0.358
2004 Conley JF, Ono Y, Tweet DJ, Solanki R. Pulsed deposition of metal–oxide thin films using dual metal precursors Applied Physics Letters. 84: 398-400. DOI: 10.1063/1.1643545  0.412
2003 Conley JF, Ono Y, Solanki R, Tweet DJ. Thin HfO 2 Films Deposited via Alternating Pulses of Hf(NO 3 ) 4 and HfCl 4 Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D3.7  0.307
2003 Gao W, Conley JF, Sharp YO. Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D1.4  0.329
2003 Kang AY, Lenahan PM, Conley JF. Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si Applied Physics Letters. 83: 3407-3409. DOI: 10.1063/1.1621078  0.622
2003 He W, Solanki R, Conley JF, Ono Y. Pulsed deposition of silicate films Journal of Applied Physics. 94: 3657-3659. DOI: 10.1063/1.1599976  0.409
2003 Conley JF, Ono Y, Solanki R, Stecker G, Zhuang W. Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O Applied Physics Letters. 82: 3508-3510. DOI: 10.1063/1.1575934  0.442
2003 Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic layer deposition of thin hafnium oxide films using a carbon free precursor Journal of Applied Physics. 93: 712-718. DOI: 10.1063/1.1528306  0.391
2003 Vandooren A, Cristoloveanu S, Conley JF, Mojarradi M, Kolawa E. A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs Solid-State Electronics. 47: 1419-1427. DOI: 10.1016/S0038-1101(03)00101-1  0.331
2002 Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.2  0.386
2002 Conley JF, Ono Y, Zhuang W, Tweet DJ, Gao W, Mohammed SK, Solanki R. Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate Electrochemical and Solid State Letters. 5. DOI: 10.1149/1.1462875  0.414
2002 Kang AY, Lenahan PM, Conley JF. The radiation response of the high dielectric-constant hafnium oxide/silicon system Ieee Transactions On Nuclear Science. 49: 2636-2642. DOI: 10.1109/Tns.2002.805334  0.602
2002 Kang AY, Lenahan PM, Conley JF. Reliability concerns for HfO2/Si devices: Interface and dielectric traps Ieee International Integrated Reliability Workshop Final Report. 2002: 102-107. DOI: 10.1109/IRWS.2002.1194243  0.612
2002 Kang AY, Lenahan PM, Conley JF, Solanki R. Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si Applied Physics Letters. 81: 1128-1130. DOI: 10.1063/1.1494123  0.641
2002 Suehle JS, Vogel EM, Roitman P, Conley JF, Johnston AH, Wang B, Bernstein JB, Weintraub CE. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation Applied Physics Letters. 80: 1282-1284. DOI: 10.1063/1.1448859  0.341
2001 Conley J, Suehle J, Johnston A, Wang B, Miyahara T, Vogel E, Bernstein J. Heavy-ion-induced soft breakdown of thin gate oxides Ieee Transactions On Nuclear Science. 48: 1913-1916. DOI: 10.1109/23.983150  0.323
1999 Lenahan PM, Mele JJ, Conley JF, Lowry RK, Woodbury D. Predicting radiation response from process parameters: Verification of a physically based predictive model Ieee Transactions On Nuclear Science. 46: 1534-1543. DOI: 10.1109/23.819118  0.334
1998 Lenahan PM, Conley JF. What can electron paramagnetic resonance tell us about the Si/SiO2 system? Journal of Vacuum Science & Technology B. 16: 2134-2153. DOI: 10.1116/1.590301  0.351
1998 Conley JF, Lenahan PM, McArthur WF. Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films Applied Physics Letters. 73: 2188-2190. DOI: 10.1063/1.122418  0.577
1997 Conley J, Lenahan P, Wallace B, Cole P. Quantitative model of radiation induced charge trapping in SiO/sub 2/ Ieee Transactions On Nuclear Science. 44: 1804-1809. DOI: 10.1109/23.658946  0.571
1997 Lenahan PM, Conley JF, Wallace BD. A model of hole trapping in SiO2 films on silicon Journal of Applied Physics. 81: 6822-6824. DOI: 10.1063/1.365438  0.427
1997 Lenahan PM, Conley JF. A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2 Applied Physics Letters. 71: 3126-3128. DOI: 10.1063/1.120284  0.404
1997 Lenahan PM, Conley JF, Wallace BD. A model of hole trapping in SiO2 films on silicon Journal of Applied Physics. 81: 6822-6824.  0.547
1996 Conley JF. Application of Electron Spin Resonance as a Tool for Building In Reliability (BIR) Mrs Proceedings. 428. DOI: 10.1557/Proc-428-293  0.334
1996 Conley JF, Lenahan PM, Wallace BD. Electron spin resonance characterization of trapping centers in Unibond buried oxides Ieee Transactions On Nuclear Science. 43: 2635-2638. DOI: 10.1109/23.556846  0.445
1996 Conley JF, Lenahan PM, Wallace BD. Electron spin resonance characterization of trapping centers in unibond® buried oxides Ieee Transactions On Nuclear Science. 43: 2635-2638.  0.553
1995 Conley JF, Lenahan PM. Electron spin resonance evidence for a localized EP (E′δ-like) defect structure Materials Research Society Symposium - Proceedings. 378: 377-380. DOI: 10.1557/Proc-378-377  0.567
1995 Conley JF, Lenahan PM, Lelis AJ, Oldham TR. Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps Ieee Transactions On Nuclear Science. 42: 1744-1749. DOI: 10.1109/23.488774  0.622
1995 Conley JF, Lenahan PM. Electron Spin Resonance Analysis of EP Center Interactions With H2: Evidence for a Localized EP Center Structure Ieee Transactions On Nuclear Science. 42: 1740-1743. DOI: 10.1109/23.488773  0.556
1995 Conley JF, Lenahan PM, Lelis AJ, Oldham TR. Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2 Applied Physics Letters. 67: 2179-2181. DOI: 10.1063/1.115095  0.455
1995 Conley JF, Lenahan PM. Hydrogen complexed EP (E′δ) centers and EP H2 interactions: Implications for EP structure Microelectronic Engineering. 28: 35-38. DOI: 10.1016/0167-9317(95)00010-6  0.532
1994 Conley JF, Lenahan P, Evans H, Lowry R, Morthorst T. The Roles of Several E′ Variants in Thermal Gate Oxide Reliability Mrs Proceedings. 338. DOI: 10.1557/Proc-338-37  0.637
1994 Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Observation and electronic characterization of "new" E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping Journal of Applied Physics. 76: 2872-2880. DOI: 10.1063/1.358428  0.601
1994 Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Journal of Applied Physics. 76: 8186-8188. DOI: 10.1063/1.357871  0.627
1994 Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si Applied Physics Letters. 65: 2281-2283. DOI: 10.1063/1.112718  0.62
1993 Conley JF, Lenahan PM. Molecular Hydrogen, E’ Center Hole Traps, and Radiation Induced Interface Traps in MOS Devices Ieee Transactions On Nuclear Science. 40: 1335-1340. DOI: 10.1109/23.273534  0.628
1993 Conley JF, Lenahan PM. Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon Applied Physics Letters. 62: 40-42. DOI: 10.1063/1.108812  0.604
1993 Conley JF, Lenahan PM. Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si Microelectronic Engineering. 22: 215-218. DOI: 10.1016/0167-9317(93)90160-7  0.608
1992 Conley JF, Lenahan PM. Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon Ieee Transactions On Nuclear Science. 39: 2186-2191. DOI: 10.1109/23.211420  0.605
1992 Conley JF, Lenahan PM, Roitman P. Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides Ieee Transactions On Nuclear Science. 39: 2114-2120. DOI: 10.1109/23.211410  0.591
1992 Conley JF, Lenahan PM, Roitman P. Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap Applied Physics Letters. 60: 2889-2891. DOI: 10.1063/1.106809  0.589
1991 Conley JF, Roitman P, Lenahan PM. Electron spin resonance study of E′ trapping centers in SIMOX buried oxides Ieee Transactions On Nuclear Science. 38: 1247-1252. DOI: 10.1109/23.124100  0.607
Show low-probability matches.