Pramod Kumar Tiwari

Affiliations: 
School of Studies in Zoology, Jiwaji Univ, Gwalior, India, Gwalior, Madhya Pradesh, India 
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"Pramod Tiwari"
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Publications

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Gola D, Singh B, Srinivas PSTN, et al. (2020) Thermal Noise Models for Trigate Junctionless Transistors Including Substrate Bias Effects Ieee Transactions On Electron Devices. 67: 263-269
Kumar S, Singh Y, Singh B, et al. (2020) Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET Based Biosensor Ieee Sensors Journal. 1-1
Srinivas PSTN, Kumar A, Jit S, et al. (2020) Self-heating effects and hot carrier degradation in In 0.53 Ga 0.47 As Gate-All-Around (GAA) MOSFETs Semiconductor Science and Technology. 35: 65008
Moparthi S, Adarsh KP, Tiwari PK, et al. (2020) Analog and RF performance evaluation of negative capacitance SOI junctionless transistor Aeu-International Journal of Electronics and Communications. 122: 153243
Duksh YS, Singh B, Gola D, et al. (2020) Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs Silicon
Srinivas PSTN, Kumar A, Tiwari PK. (2020) Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs) Silicon. 1-11
Purwar V, Gupta R, Kumar N, et al. (2020) Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs Applied Physics A. 126: 1-8
Kumar A, Srinivas PSTN, Bhushan S, et al. (2019) Threshold Voltage Modeling of Double Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors (DGAA MOSFETs) Including the Fringing Field Effects Journal of Nanoelectronics and Optoelectronics. 14: 1555-1564
Gola D, Singh B, Tiwari PK. (2019) Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFET s Using Substrate Bias Induced Effects Ieee Transactions On Nanotechnology. 18: 329-335
Gola D, Singh B, Singh J, et al. (2019) Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor With Substrate Bias-Induced Effects Ieee Transactions On Electron Devices. 66: 2876-2883
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