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Ho-Young Cha, Ph.D. - Publications

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering
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107 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Jang CH, Atmaca G, Cha HY. Normally-off β-GaO MOSFET with an Epitaxial Drift Layer. Micromachines. 13. PMID 36014107 DOI: 10.3390/mi13081185  0.325
2021 Kim TH, Jang WH, Yim JH, Cha HY. Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode. Micromachines. 12. PMID 33802182 DOI: 10.3390/mi12030291  0.309
2020 Kim HS, Kang MJ, Kim JJ, Seo KS, Cha HY. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlON MIS Gate. Materials (Basel, Switzerland). 13. PMID 32230767 DOI: 10.3390/Ma13071538  0.513
2020 Choi JH, Vuong TA, Kim H, Cha HY. High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 20: 4404-4408. PMID 31968484 DOI: 10.1166/Jnn.2020.17786  0.383
2020 Park H, Na Y, Lee S, Suh S, Oh Y, Lee J, Kim SG, Han S, Cha H, Yoon J. Electrical Properties of Horizontal Array Capacitor Using Composite Organic Dielectric Layer of Impregnated Glass-Fiber Epoxy Advances in Polymer Technology. 2020: 1-8. DOI: 10.1155/2020/5601714  0.328
2020 Kim H, Kang M, Jang W, Seo K, Kim H, Cha H. PECVD SiNx Passivation for AlGaN/GaN HFETs with Ultra-Thin AlGaN Barrier Solid-State Electronics. 107876. DOI: 10.1016/J.Sse.2020.107876  0.472
2020 Ki R, Lee J, Cha H, Seo K. The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode Solid-State Electronics. 166: 107768. DOI: 10.1016/J.Sse.2020.107768  0.481
2020 Choi U, Kim H, Lee K, Jung D, Kwak T, Jang T, Nam Y, So B, Kang M, Seo K, Han M, Choi S, Lee S, Cha H, Nam O. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire Physica Status Solidi (a). 217: 1900695. DOI: 10.1002/Pssa.201900695  0.383
2019 Choi JH, Kim H, Sung HK, Cha HY. Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions. Sensors (Basel, Switzerland). 19. PMID 31888143 DOI: 10.3390/S19245549  0.374
2019 Cho G, Cha HY, Kim H. Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO Gate Insulator. Materials (Basel, Switzerland). 12. PMID 31795462 DOI: 10.3390/Ma12233968  0.376
2019 Choi U, Lee K, Kwak T, Jung D, Jang T, Nam Y, So B, Kim H, Cha H, Kang M, Seo K, Nam O. Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT Japanese Journal of Applied Physics. 58: 121003. DOI: 10.7567/1347-4065/Ab4Df3  0.437
2019 Jang W, Kim H, Kang M, Cho C, Cha H. Recessed AlGaN/GaN UV Phototransistor Journal of Semiconductor Technology and Science. 19: 184-189. DOI: 10.5573/Jsts.2019.19.2.184  0.413
2019 Seo SG, Han S, Cha H, Yang S, Jin SH. Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS 2 -Loads Ieee Electron Device Letters. 40: 107-110. DOI: 10.1109/Led.2018.2879908  0.36
2019 Eom S, Kong M, Cha H, Seo K. Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO x N y Gate Stack Ieee Journal of the Electron Devices Society. 7: 908-913. DOI: 10.1109/Jeds.2019.2934745  0.438
2019 Kang M, Eom S, Kim H, Lee C, Cha H, Seo K. Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator Semiconductor Science and Technology. 34: 55018. DOI: 10.1088/1361-6641/Ab10F1  0.517
2018 Kang JI, Kim H, Han CY, Yang H, Jeon SR, Park B, Cha HY. Enhanced UV absorption of GaN photodiodes with a ZnO quantum dot coating layer. Optics Express. 26: 8296-8300. PMID 29715798 DOI: 10.1364/Oe.26.008296  0.313
2018 Kim H, Jang W, Eom S, Han S, Kim H, Seo K, Cho C, Cha H. Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs Journal of Semiconductor Technology and Science. 18: 187-192. DOI: 10.5573/Jsts.2018.18.2.187  0.454
2018 Cho G, Cha H, Kim H. Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs Journal of Semiconductor Technology and Science. 18: 78-83. DOI: 10.5573/Jsts.2018.18.1.078  0.319
2018 Lee J, Kim D, Eom S, Roh S, Seo K, Kim H, Kim H, Cha H, Byun Y. Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing Journal of the Korean Physical Society. 72: 166-170. DOI: 10.3938/Jkps.72.166  0.394
2018 Kim T, Lim S, Park Y, Jung G, Song J, Cha H, Han S. Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation Journal of the Korean Physical Society. 72: 1332-1336. DOI: 10.3938/Jkps.72.1332  0.449
2018 Eom S, Kong M, Kang M, Lee J, Cha H, Seo K. Enhanced Interface Characteristics of PA-ALD HfO x N y /InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N 2 Plasma Ieee Electron Device Letters. 39: 1636-1639. DOI: 10.1109/Led.2018.2870176  0.308
2018 Kim D, Park H, Eom S, Jeong J, Cha H, Seo K. Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- ${k}$ Dual MIS Structure Ieee Electron Device Letters. 39: 995-998. DOI: 10.1109/Led.2018.2834223  0.439
2018 Chung G, Cha H, Kim H. Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer Electronics Letters. 54: 896-897. DOI: 10.1049/El.2018.1167  0.35
2018 Kim H, Eom S, Seo K, Kim H, Cha H. Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide Vacuum. 155: 428-433. DOI: 10.1016/J.Vacuum.2018.06.043  0.424
2018 Hwang I, Eom S, Choi G, Kang M, Lee J, Cha H, Seo K. High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON Physica Status Solidi (a). 215: 1700650. DOI: 10.1002/Pssa.201700650  0.486
2017 Ko K, Lee K, So B, Heo C, Lee K, Kwak T, Han S, Cha H, Nam O. Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate Japanese Journal of Applied Physics. 56: 15502. DOI: 10.7567/Jjap.56.015502  0.409
2017 Kim D, Jeong J, Eom S, Lee J, Seo K, Cha H. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer Journal of the Korean Physical Society. 71: 711-716. DOI: 10.3938/Jkps.71.697  0.475
2017 Roh S, Eom S, Choi G, Kang M, Kim D, Hwang I, Seo K, Lee J, Byun Y, Cha H. Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator Journal of the Korean Physical Society. 71: 185-190. DOI: 10.3938/Jkps.71.185  0.526
2017 Kim D, Eom S, Jeong J, Lee J, Seo K, Cha H. Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 60601. DOI: 10.1116/1.4998310  0.431
2017 Kim H, Han S, Jang W, Cho C, Seo K, Oh J, Cha H. Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric Ieee Electron Device Letters. 38: 1090-1093. DOI: 10.1109/Led.2017.2720719  0.475
2017 Choi J, Jo M, Han S, Kim H, Kim S, Jang S, Kim J, Cha H. Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption Electronics Letters. 53: 1200-1202. DOI: 10.1049/El.2017.2107  0.301
2017 Han S, Park S, Kim H, Jo M, Cha H. Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver Electronics Letters. 53: 198-199. DOI: 10.1049/El.2016.2813  0.432
2017 Han S, Jo M, Kim H, Cho C, Cha H. AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster Solid-State Electronics. 134: 30-38. DOI: 10.1016/J.Sse.2017.05.009  0.45
2017 Kang M, Lee M, Choi G, Hwang I, Cha H, Seo K. High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure Physica Status Solidi (a). 214: 1600726. DOI: 10.1002/Pssa.201600726  0.52
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51. PMID 27398439 DOI: 10.1166/Jnn.2016.12042  0.505
2016 Ki R, Hwang I, Cha H, Seo K. Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2016.Ps-6-08  0.453
2016 Kim H, Heo S, Cha H. Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs Journal of Semiconductor Technology and Science. 16: 867-872. DOI: 10.5573/Jsts.2016.16.6.867  0.443
2016 Han SW, Park SH, Kim HS, Lim J, Cho CH, Cha HY. Normally-off operation of AlGaN/GaN heterojunction field-effect transistor with clamping diode Journal of Semiconductor Technology and Science. 16: 221-225. DOI: 10.5573/Jsts.2016.16.2.221  0.434
2016 Park S, Lee J, Cho C, Choi Y, Kim H, Cha H. Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor Jsts:Journal of Semiconductor Technology and Science. 16: 215-220. DOI: 10.5573/Jsts.2016.16.2.215  0.416
2016 Cho CH, Cha HY, Sung HK. Characterization of stiffness coefficients of silicon versus temperature using “Poisson’s ratio” measurements Journal of Semiconductor Technology and Science. 16: 153-158. DOI: 10.5573/Jsts.2016.16.2.153  0.314
2016 Kim DH, Eom SK, Kang MJ, Jeong JS, Seo KS, Cha HY. V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4947005  0.445
2016 Han S, Noh Y, Jo M, Kim S, Oh J, Seo K, Cha H. Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH 3 MBE Ieee Electron Device Letters. 37: 1613-1616. DOI: 10.1109/Led.2016.2621184  0.412
2016 Lee JG, Kim HS, Seo KS, Cho CH, Cha HY. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors Solid-State Electronics. 122: 32-36. DOI: 10.1016/J.Sse.2016.04.016  0.457
2015 Han S, Park S, Cha H. AlGaN/GaN heterojunction field-effect transistor with embedded clamping diode Applied Physics Express. 8: 81001. DOI: 10.7567/Apex.8.081001  0.465
2015 Choi S, Kang Y, Kim J, Kim J, Choi S, Kim DM, Cha H, Kim H, Kim DH. Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors Jsts:Journal of Semiconductor Technology and Science. 15: 497-503. DOI: 10.5573/Jsts.2015.15.5.497  0.452
2015 Lee J, Park B, Lee J, Lim J, Cha H. Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET Journal of Semiconductor Technology and Science. 15: 16-21. DOI: 10.5573/Jsts.2015.15.1.016  0.383
2015 Kang Y, Cha HY, Kim H, Choi S, Kim DH. Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs Journal of the Korean Physical Society. 66: 1291-1294. DOI: 10.3938/Jkps.66.1291  0.447
2015 Keum DM, Cha HY, Kim H. Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs Ieee Transactions On Nuclear Science. 62: 3362-3368. DOI: 10.1109/Tns.2015.2495209  0.449
2015 Han SW, Park SH, Lee JG, Lim J, Cha HY. AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor integrated with clamp circuit to enable normally-off operation Ieee Electron Device Letters. 36: 540-542. DOI: 10.1109/Led.2015.2427202  0.49
2015 Park B, Han S, Cha H. Diode Bridge Embedded AlGaN/GaN Bidirectional Switch Ieee Electron Device Letters. 36: 324-326. DOI: 10.1109/Led.2015.2398459  0.487
2015 Lee JG, Kim HS, Kim DH, Han SW, Seo KS, Cha HY. Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085005  0.498
2015 Lee JG, Kim HS, Lee JY, Seo KS, Cha HY. Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/115008  0.432
2014 Hwang J, Kim M, Cha HY, Spencer MG, Lee JW. Metal free growth of graphene on quartz substrate using chemical vapor deposition (CVD). Journal of Nanoscience and Nanotechnology. 14: 2979-83. PMID 24734720 DOI: 10.1166/Jnn.2014.8583  0.521
2014 Han S, Lee J, Cho C, Cha H. Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor Applied Physics Express. 7: 111002. DOI: 10.7567/Apex.7.111002  0.479
2014 Lee J, Han S, Park B, Cha H. Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain Applied Physics Express. 7: 14101. DOI: 10.7567/Apex.7.014101  0.486
2014 Keum D, Choi S, Kang Y, Lee J, Cha H, Kim H. Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors Jsts:Journal of Semiconductor Technology and Science. 14: 682-687. DOI: 10.5573/Jsts.2014.14.5.682  0.47
2014 Lee J, Cha H. Improved Characteristics in AlGaN/GaN-on-Si HFETs Using Sacrificial GaO x Process Journal of the Institute of Electronics Engineers of Korea. 51: 33-37. DOI: 10.5573/Ieie.2014.51.2.033  0.335
2014 Choi S, Lee J, Kang Y, Cha H, Kim H, Cho C. Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field-effect transistors Journal of the Korean Physical Society. 65: 526-531. DOI: 10.3938/Jkps.65.526  0.438
2014 Lee MS, Kim D, Eom S, Cha HY, Seo KS. A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz Ieee Electron Device Letters. 35: 995-997. DOI: 10.1109/Led.2014.2343233  0.348
2014 Choi W, Seok O, Ryu H, Cha HY, Seo KS. High-voltage and low-leakage-current gate recessed normally-Off GaN MIS-HEMTs with dual gate insulator employing PEALD-SiNx/RF-Sputtered- HfO2 Ieee Electron Device Letters. 35: 175-177. DOI: 10.1109/Led.2013.2293579  0.509
2014 Choi W, Ryu H, Jeon N, Lee M, Cha HY, Seo KS. Improvement of Vth instability in normally-off GaN MIS-HEMTs employing PEALD-SiNx as an interfacial layer Ieee Electron Device Letters. 35: 30-32. DOI: 10.1109/Led.2013.2291551  0.485
2014 Park Y, Kim JJ, Chang W, Jang HG, Na J, Lee H, Jun CH, Cha HY, Mun JK, Ko SC, Nam ES. Low onset voltage of GaN on Si Schottky barrier diode using various recess depths Electronics Letters. 50: 1164-1165. DOI: 10.1049/El.2014.1747  0.478
2014 Lee J, Park B, Kim H, Kim J, Cha H. AlGaN/GaN MOSHFET power switching transistor with embedded fast recovery diode Electronic Materials Letters. 10: 1115-1120. DOI: 10.1007/S13391-014-4128-0  0.412
2013 Kim D, Eom S, Han S, Cha H, Seo K. Suppress Current Collapse Effect by Optimizing 0.12um Gate Structure of AlGaN/GaN HEMTs on Si-substrate for Microwave Power Applications The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.Ps-6-5  0.422
2013 Park B, Lee J, Cha H. Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode Applied Physics Express. 6: 31001. DOI: 10.7567/Apex.6.031001  0.486
2013 Kim SY, Cha H. Study on Self-Heating Effects in AlGaN/GaN-on-Si Power Transistors Journal of the Institute of Electronics Engineers of Korea. 50: 91-97. DOI: 10.5573/Ieek.2013.50.2.091  0.452
2013 Choi S, Lee J, Cha H, Kim H. Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress Journal of the Korean Physical Society. 63: 1208-1212. DOI: 10.3938/Jkps.63.1208  0.454
2013 Choi S, Lee J, Cha H, Kim H. Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs Journal of the Korean Physical Society. 62: 954-958. DOI: 10.3938/Jkps.62.954  0.489
2013 Park BR, Lee JG, Choi W, Kim H, Seo KS, Cha HY. High-quality ICPCVD SiO2 for normally off AlGaN/GaN-on-Si recessed MOSHFETs Ieee Electron Device Letters. 34: 354-356. DOI: 10.1109/Led.2012.2236678  0.502
2013 Lee JG, Park BR, Cho CH, Seo KS, Cha HY. Low turn-on voltage AlGaN/GaN-on-si rectifier with gated ohmic anode Ieee Electron Device Letters. 34: 214-216. DOI: 10.1109/Led.2012.2235403  0.474
2013 Noh J, Ryoo Y, Jeon N, Cha HY, Seo KS. Structural effects on heat dissipation in InGaAs MHEMTs Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/4/045012  0.348
2013 Park BR, Lee JY, Lee JG, Lee DM, Kim MK, Cha HY. Schottky barrier diode embedded AlGaN/GaN switching transistor Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/12/125003  0.504
2012 Jeon N, Choi W, Min I, Cha H, Seo K. Power Schottky Barrier Diodes with Improved Schottky Contacts on AlGaN/GaN Heterostructures The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.Ps-6-15  0.386
2012 Choi S, Lee J, Yoon H, Cha H, Kim H. Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Heterostructure FETs The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.F-9-1  0.442
2012 Choi W, Ahn H, Jeon N, Min I, Cha H, Seo K. Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.F-5-3  0.336
2012 Lee JG, Park BR, Lee HJ, Lee M, Seo KS, Cha HY. State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates Applied Physics Express. 5. DOI: 10.1143/Apex.5.066502  0.456
2011 Lee JG, Lee HJ, Cha HY, Lee M, Ryoo Y, Seo KS, Mun JK. Field plated AlGaN/GaN-on-Si HEMTs for high voltage switching applications Journal of the Korean Physical Society. 59: 2297-2300. DOI: 10.3938/Jkps.59.2297  0.494
2011 Lee J, Cho C, Cha H. Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors Ieice Transactions On Electronics. 94: 842-845. DOI: 10.1587/Transele.E94.C.842  0.426
2010 Cha HY. Structural optimization of silicon carbide PIN avalanche photodiodes for UV detection Journal of the Korean Physical Society. 56: 672-676. DOI: 10.3938/Jkps.56.672  0.461
2010 Cha H, Kim H, Lim J. DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures Journal of the Korean Physical Society. 56: 1523-1526. DOI: 10.3938/Jkps.56.1523  0.385
2010 Cha HY, Sung HK, Kim H, Cho CH, Sandvik PM. 4H-SiC avalanche photodiodes for 280nm UV detection Ieice Transactions On Electronics. 648-650. DOI: 10.1587/Transele.E93.C.648  0.345
2010 Her J, Cho H, Yoo C, Cha H, Oh J, Seo K. SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition Japanese Journal of Applied Physics. 49: 41002. DOI: 10.1143/Jjap.49.041002  0.477
2008 Cha H, Sandvik PM. Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes Japanese Journal of Applied Physics. 47: 5423-5425. DOI: 10.1143/Jjap.47.5423  0.31
2008 Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM, David JPR. Impact ionization coefficients in 4H-SiC Ieee Transactions On Electron Devices. 55: 1984-1990. DOI: 10.1109/Ted.2008.926679  0.367
2008 Cha H, Soloviev S, Zelakiewicz S, Waldrab P, Sandvik PM. Temperature Dependent Characteristics of Nonreach-Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection Ieee Sensors Journal. 8: 233-237. DOI: 10.1109/Jsen.2007.913033  0.398
2008 Schaff WJ, Chen X, Hao D, Matthews K, Richards T, Eastman LF, Lu H, Cho CJH, Cha HY. Electrical properties of InGaN grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 245: 868-872. DOI: 10.1002/Pssb.200778710  0.489
2007 Aslan B, Eastman LF, Schaff WJ, Chen X, Spencer MG, Cha HOY, Dyson A, Ridley BK. Ballistic electron acceleration negative-differantial-conductivity devices International Journal of High Speed Electronics and Systems. 17: 173-176. DOI: 10.1142/S012915640600376X  0.641
2007 Koley G, Lakshmanan L, Wu H, Cha HY. Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics Physica Status Solidi (a) Applications and Materials Science. 204: 1123-1129. DOI: 10.1002/Pssa.200622516  0.722
2006 Choi YC, Pophristic M, Cha HY, Peres B, Spencer MG, Eastman LF. The effect of an Fe-doped GaN buffer on OFF-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate Ieee Transactions On Electron Devices. 53: 2926-2931. DOI: 10.1109/Ted.2006.885679  0.659
2006 Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018  0.79
2006 Cha H, Wu H, Chae S, Spencer MG. Gallium nitride nanowire nonvolatile memory device Journal of Applied Physics. 100: 024307. DOI: 10.1063/1.2216488  0.717
2006 Cha HOY, Chen X, Wu H, Schaff WJ, Spencer MG, Eastman LF. Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410. DOI: 10.1007/Bf02690526  0.679
2005 Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L1348  0.714
2005 Choi YC, Cha HY, Eastman LF, Spencer MG. A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: Source inserted double-gate structure with a supplementary highly doped region Ieee Transactions On Electron Devices. 52: 1940-1948. DOI: 10.1109/Ted.2005.854278  0.659
2005 Choi YC, Cha HY, Eastman LF, Spencer MG. Design optimization of 600 V SiC SITs for high power and high frequency operation Semiconductor Science and Technology. 20: 193-201. DOI: 10.1088/0268-1242/20/2/017  0.641
2005 Cha HOY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O. Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 34: 330-335. DOI: 10.1007/S11664-005-0105-6  0.661
2004 Choi YC, Cha HY, Eastman LF, Spencer MG. Influence of the N-diffusion layer on the channel current and the breakdown voltage in 4H-SiC SIT International Journal of High Speed Electronics and Systems. 14: 909-914. DOI: 10.1142/S0129156404003034  0.513
2004 Cha HOY, Choi YC, Eastman LF, Spencer MG. Simulation study on breakdown behavior of field-plate SiC MESFETs International Journal of High Speed Electronics and Systems. 14: 884-889. DOI: 10.1142/S0129156404002995  0.535
2004 Koley G, Cha HY, Hwang J, Schaff WJ, Eastman LF, Spencer MG. Perturbation of charges in AIGaN/GaN heterostructures by ultraviolet laser illumination Journal of Applied Physics. 96: 4253-4262. DOI: 10.1063/1.1794892  0.711
2004 Hwang J, Schaff WJ, Green BM, Cha H, Eastman LF. Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Solid-State Electronics. 48: 363-366. DOI: 10.1016/S0038-1101(03)00324-1  0.582
2004 Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG. Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs Solid-State Electronics. 48: 1233-1237. DOI: 10.1016/J.Sse.2004.01.005  0.653
2004 Cha HY, Choi YC, Thompson RM, Kaper V, Shealy JR, Eastman LF, Spencer MG. Influence of Si 3N 4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors Journal of Electronic Materials. 33: 908-911. DOI: 10.1007/S11664-004-0219-2  0.701
2003 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs Ieee Transactions On Electron Devices. 50: 1569-1574. DOI: 10.1109/Ted.2003.814982  0.8
2003 Cha HY, Thomas CI, Choi YC, Eastman LF, Spencer MG. Gate field emission induced breakdown in power SiC MESFETs Ieee Electron Device Letters. 24: 571-573. DOI: 10.1109/Led.2003.815422  0.757
2002 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. The effect of channel recess and passivation on 4H-SiC MESFETs Materials Research Society Symposium - Proceedings. 742: 283-288. DOI: 10.1557/Proc-742-K5.19  0.731
2002 Koley G, Cha HY, Thomas CI, Spencer MG. Laser-induced surface potential transients observed in III-nitride heterostructures Applied Physics Letters. 81: 2282-2284. DOI: 10.1063/1.1506416  0.751
2002 Koley G, Cha HY, Tilak V, Eastman LF, Spencer MG. Modulation of surface barrier in AlGaN/GaN heterostructures Physica Status Solidi (B) Basic Research. 234: 734-737. DOI: 10.1002/1521-3951(200212)234:3<734::Aid-Pssb734>3.0.Co;2-C  0.747
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