| Year |
Citation |
Score |
| 2021 |
Hernandez-Mainet L, Chen G, Zangiabadi A, Shen A, Tamargo MC. Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications Journal of Vacuum Science & Technology A. 39: 033205. DOI: 10.1116/6.0000947 |
0.356 |
|
| 2019 |
Wang Y, Li L, Wang H, Su L, Chen H, Bian W, Ma J, Li B, Liu Z, Shen A. An ultrahigh responsivity self-powered solar-blind photodetector based on a centimeter-sized β-GaO/polyaniline heterojunction. Nanoscale. PMID 31872830 DOI: 10.1039/C9Nr09095A |
0.308 |
|
| 2018 |
Kaya Y, Ravikumar A, Chen G, Tamargo MC, Shen A, Gmachl C. Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector Aip Advances. 8: 075105. DOI: 10.1063/1.5013607 |
0.405 |
|
| 2018 |
Wang YF, Yu LD, Chen HY, Li BS, Wang XJ, Liu ZG, Sui Y, Shen A. Effects of Nitrogen Partial Pressure Ratio and Anneal Temperature on the Properties of Al–N Co-Doped ZnO Thin Films Journal of Electronic Materials. 47: 4351-4355. DOI: 10.1007/S11664-018-6294-6 |
0.362 |
|
| 2016 |
Zhang S, Zeylikovich I, Gayen TK, Das B, Alfano RR, Shen A, Tamargo MC. Interface-state-phonon-assisted energy relaxation of hot electrons in CdSe quantum dots Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4941138 |
0.409 |
|
| 2016 |
Chen G, Tamargo MC, Shen A. MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 μm Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/11/115111 |
0.392 |
|
| 2016 |
Song D, Li L, Li B, Sui Y, Shen A. Band gap engineering of N-alloyed Ga2O3 thin films Aip Advances. 6. DOI: 10.1063/1.4954720 |
0.382 |
|
| 2016 |
Chen G, Kaya Y, Ravikumar AP, Tamargo MC, Gmachl CF, Shen A. Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 13: 673-676. DOI: 10.1002/Pssc.201510257 |
0.508 |
|
| 2016 |
Wang YF, Song DY, Li L, Li BS, Shen A, Sui Y. Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn3N2:Al thin films Physica Status Solidi (C) Current Topics in Solid State Physics. 13: 585-589. DOI: 10.1002/Pssc.201510164 |
0.317 |
|
| 2015 |
Chen G, Tamargo MC, Shen A. Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region Journal of Applied Physics. 118: 165707. DOI: 10.1063/1.4934858 |
0.481 |
|
| 2015 |
Zhao K, Chen G, Hernandez J, Tamargo MC, Shen A. Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates Journal of Crystal Growth. 425: 221-224. DOI: 10.1016/J.Jcrysgro.2015.02.002 |
0.661 |
|
| 2015 |
Jesus JD, Chen G, Hernandez-Mainet LC, Shen A, Tamargo MC. Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices Journal of Crystal Growth. 425: 207-211. DOI: 10.1016/J.Jcrysgro.2014.12.021 |
0.53 |
|
| 2014 |
Chen G, Zhao K, Tamargo MC, Shen A. Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 02C105. DOI: 10.1116/1.4863496 |
0.673 |
|
| 2014 |
Chen G, Jesus JD, Tamargo MC, Shen A. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm Applied Physics Letters. 105: 232107. DOI: 10.1063/1.4903823 |
0.517 |
|
| 2014 |
Zhao K, Chen G, Li B, Shen A. Mid-infrared intersubband absorptions in ZnO/ZnMgO multiple quantum wells Applied Physics Letters. 104: 212104. DOI: 10.1063/1.4880816 |
0.672 |
|
| 2013 |
De Jesus J, Garcia TA, Dhomkar S, Ravikumar A, Gmachl C, Chen G, Shen A, Ferizovic D, Muñoz M, Tamargo MC. Characterization of the three-well active region of a quantum cascade laser using contactless electroreflectance Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4803838 |
0.407 |
|
| 2013 |
Axtmann Garcia T, Hong S, Tamargo M, De Jesus J, Deligiannakis V, Ravikumar A, Gmachl C, Shen A. Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4803837 |
0.507 |
|
| 2013 |
Shen A, Pawan Ravikumar A, Chen G, Zhao K, Alfaro-Martinez A, Garcia T, De Jesus J, Tamargo MC, Gmachl C. MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4794383 |
0.641 |
|
| 2013 |
Shen A, Chen G, Zhao K, Lai JT, Tamargo MC. Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4789478 |
0.663 |
|
| 2013 |
Ravikumar AP, Chen G, Zhao K, Tian Y, Prucnal P, Tamargo MC, Gmachl CF, Shen A. Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector Cleo: Science and Innovations, Cleo_si 2013. CTh4J.3. DOI: 10.1063/1.4802955 |
0.608 |
|
| 2013 |
Ravikumar AP, Chen G, Zhao K, Tian Y, Prucnal P, Tamargo MC, Gmachl CF, Shen A. Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector Cleo: Science and Innovations, Cleo_si 2013. CTh4J.3. DOI: 10.1063/1.4802955 |
0.358 |
|
| 2012 |
Ravikumar AP, Alfaro-Martinez A, Chen G, Zhao K, Tamargo MC, Gmachl CF, Shen A. ZnCdSe/ZnCdMgSe quantum well infrared photodetector. Optics Express. 20: 22391-7. PMID 23037387 DOI: 10.1364/Oe.20.022391 |
0.633 |
|
| 2012 |
Zhao K, Shen A. Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma-Assisted Molecular Beam Epitaxy World Journal of Condensed Matter Physics. 2: 160-164. DOI: 10.4236/Wjcmp.2012.23026 |
0.538 |
|
| 2012 |
Zhao K, Wang S, Shen A. ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam Epitaxy Journal of Electronic Materials. 41: 2151-2154. DOI: 10.1007/S11664-012-2137-Z |
0.576 |
|
| 2012 |
Moug RT, Sultana H, Yao Y, Alfaro-Martinez A, Peng L, Garcia T, Shen A, Gmachl C, Tamargo MC. Optimization of molecular beam epitaxy (MBE) growth for the development of mid-infrared (IR) II-VI quantum cascade lasers Journal of Electronic Materials. 41: 944-947. DOI: 10.1007/S11664-012-2082-X |
0.426 |
|
| 2012 |
Moug R, Alfaro-Martinez A, Peng L, Garcia T, Deligiannakis V, Shen A, Tamargo M. Selective etching of InGaAs/InP substrates from II-VI multilayer heterostructures Physica Status Solidi (C). 9: 1728-1731. DOI: 10.1002/Pssc.201100716 |
0.374 |
|
| 2012 |
Zhao K, Ye L, Tamargo MC, Shen A. Plasma-assisted MBE growth of ZnO on GaAs substrate with a ZnSe buffer layer Physica Status Solidi (C). 9: 1809-1812. DOI: 10.1002/Pssc.201100613 |
0.62 |
|
| 2011 |
Yao Y, Alfaro-Martinez A, Franz KJ, Charles WO, Shen A, Tamargo MC, Gmachl CF. Room temperature and narrow intersubband electroluminescence from ZnCdSe/ZnCdMgSe quantum cascade laser structures Applied Physics Letters. 99. DOI: 10.1063/1.3614561 |
0.44 |
|
| 2011 |
Zhang Q, Shen A, Kuskovsky IL, Tamargo MC. Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe Journal of Applied Physics. 110: 034302. DOI: 10.1063/1.3611418 |
0.46 |
|
| 2011 |
Wu JD, Huang YS, Lin DY, Charles WO, Shen A, Tamargo MC, Tiong KK. Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Zn x′Cdy′Mg1-x′-y′Se asymmetric coupled quantum well structure Journal of Alloys and Compounds. 509: 3751-3755. DOI: 10.1016/j.jallcom.2010.12.207 |
0.341 |
|
| 2011 |
Roy B, Shen A, Tamargo MC, Kuskovsky IL. Effects of varying MBE growth conditions on layered Zn-Se-Te structures Journal of Electronic Materials. 40: 1775-1780. DOI: 10.1007/S11664-011-1690-1 |
0.48 |
|
| 2010 |
Zhang Q, Li Y, Pagliero D, Charles W, Shen A, Meriles CA, Tamargo MC. Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3D1-C3D5. DOI: 10.1116/1.3336144 |
0.42 |
|
| 2010 |
Zhang SK, Myint T, Wang WB, Das BB, Perez-Paz N, Lu H, Tamargo MC, Shen A, Alfano RR. Optical study of strongly coupled CdSe quantum dots Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C3D17-C3D19. DOI: 10.1116/1.3290748 |
0.501 |
|
| 2010 |
Charles WO, Yao Y, Franz KJ, Zhang Q, Shen A, Gmachl C, Tamargo MC. Growth of Znx, Cd(1-x′) Se/ Znx Cdy Mg(1-x-y) Se-InP quantum cascade structures for emission in the 3-5 μm range Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C3G24-C3G27. DOI: 10.1116/1.3276438 |
0.494 |
|
| 2010 |
Wu JD, Huang YS, Li BS, Shen A, Tamargo MC, Tiong KK. Photoluminescence and photoreflectance characterization of ZnxCd1−xSe/MgSe multiple quantum wells Journal of Applied Physics. 108: 123105. DOI: 10.1063/1.3520477 |
0.459 |
|
| 2010 |
Zhang Q, Li Y, Liu X, Pagliero D, Shen A, Meriles CA, Tamargo MC. Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates Physica Status Solidi (C). 7: 1665-1667. DOI: 10.1002/Pssc.200983266 |
0.359 |
|
| 2010 |
Wu JD, Huang CT, Huang YS, Charles WO, Shen A, Zhang Q, Tamargo MC. Optical characterization of intersubband transitions in Zn xCd1-xSe/Znx′Cdy′Mg 1-x′-y′Se asymmetric coupled quantum well structures by contactless electroreflectance Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1530-1532. DOI: 10.1002/pssc.200983159 |
0.355 |
|
| 2010 |
Yao Y, Charles WO, Franz KJ, Shen A, Tamargo MC, Gmachl CF. Improvement on the luminescence efficiency, electroluminescence linewidth and transport properties of ZnCdSe/ZnCdMgSe quantum cascade structures Optics Infobase Conference Papers. |
0.336 |
|
| 2009 |
Wu JD, Lin JW, Huang YS, Charles WO, Shen A, Zhang Q, Tamargo MC. Characterization of a ZnxCd1-xSe/Zn x′Cdy′Mg1-x′-y′Se multiple quantum well structure for mid-infrared device applications by contactless electroreflectance and Fourier transform infrared spectroscopy Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/16/165102 |
0.327 |
|
| 2009 |
Wu JD, Huang CT, Huang YS, Charles WO, Shen A, Tamargo MC. Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a Znx Cd1-x Se/ Zn x′ Cd y′ Mg1- x′ - Y′ Se asymmetric coupled quantum well structure for quantum cascade laser application Applied Physics Letters. 95. DOI: 10.1063/1.3263951 |
0.432 |
|
| 2009 |
Zhang Q, Charles W, Li B, Shen A, Meriles CA, Tamargo MC. Control of crystal orientation of CdTe epitaxial layers grown on (001) GaAs with ZnSe buffer layer by molecular beam epitaxy Journal of Crystal Growth. 311: 2603-2607. DOI: 10.1016/J.Jcrysgro.2009.02.045 |
0.444 |
|
| 2009 |
Li BS, Akimoto K, Shen A. Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer Journal of Crystal Growth. 311: 1102-1105. DOI: 10.1016/J.Jcrysgro.2008.11.038 |
0.309 |
|
| 2009 |
Li BS, Shen A, Charles WO, Zhang Q, Tamargo MC. Growth and properties of wide bandgap MgSe/ZnxCd1-xSe multiple quantum wells for intersubband devices operating at short wavelengths Journal of Crystal Growth. 311: 2113-2115. DOI: 10.1016/J.Jcrysgro.2008.11.020 |
0.513 |
|
| 2009 |
Shen A, Charles WO, Li BS, Franz KJ, Gmachl C, Zhang Q, Tamargo MC. Wide band gap II-VI selenides for short wavelength intersubband devices Journal of Crystal Growth. 311: 2109-2112. DOI: 10.1016/J.Jcrysgro.2008.10.102 |
0.455 |
|
| 2008 |
Charles WO, Shen A, Franz K, Gmachl C, Zhang Q, Gong Y, Neumark GF, Tamargo MC. Growth and characterization of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se asymmetric coupled quantum well structures for quantum cascade laser applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1171-1173. DOI: 10.1116/1.2912085 |
0.463 |
|
| 2008 |
Franz KJ, Charles WO, Shen A, Hoffman AJ, Tamargo MC, Gmachl C. Intersubband electroluminescence from a ZnCdSe/ZnCdMgSe quantum cascade structure 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551818 |
0.319 |
|
| 2008 |
Li BS, Shen A, Charles WO, Zhang Q, Tamargo MC. Midinfrared intersubband absorption in wide band gap II-VI Znx Cd1-x Se multiple quantum wells with metastable zincblende MgSe barriers Applied Physics Letters. 92. DOI: 10.1063/1.2943660 |
0.461 |
|
| 2008 |
Franz KJ, Charles WO, Shen A, Hoffman AJ, Tamargo MC, Gmachl C. ZnCdSe/ZnCdMgSe quantum cascade electroluminescence Applied Physics Letters. 92. DOI: 10.1063/1.2903135 |
0.465 |
|
| 2008 |
Li BS, Akimoto R, Shen A. Thermal annealing effects on intersubband transitions in (CdS∕ZnSe)∕BeTe quantum wells Applied Physics Letters. 92: 21123. DOI: 10.1063/1.2835050 |
0.481 |
|
| 2008 |
Charles WO, Franz KJ, Shen A, Zhang Q, Gong Y, Li B, Gmachl C, Tamargo MC. Molecular beam epitaxy growth of ZnxCd(1-x)Se/Znx′Cdy′Mg(1-x′-y′)Se-InP quantum cascade structures Journal of Crystal Growth. 310: 5380-5384. DOI: 10.1016/J.Jcrysgro.2008.08.056 |
0.463 |
|
| 2007 |
Lu H, Shen A, Tamargo MC, Charles W, Yokomizo I, Mũoz M, Gong Y, Neumark GF, Franz KJ, Gmachl C, Song CY, Liu HC. Study of intersubband transitions of Znx Cd1-x Se Zn x′ Cd y′ Mg1- x′ - Y′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1103-1107. DOI: 10.1116/1.2723761 |
0.518 |
|
| 2007 |
Shen A, Lu H, Tamargo MC, Charles W, Yokomizo I, Song CY, Liu HC, Zhang SK, Zhou X, Alfano RR, Franz KJ, Gmachl C. Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 995-998. DOI: 10.1116/1.2720859 |
0.493 |
|
| 2007 |
Shen A, Lu H, Charles W, Yokomizo I, Tamargo MC, Franz KJ, Gmachl C, Zhang SK, Zhou X, Alfano RR, Liu HC. Intersubband absorption in CdSe/ZnxCdyMg 1-x-ySe self-assembled quantum dot multilayers Applied Physics Letters. 90. DOI: 10.1063/1.2679783 |
0.495 |
|
| 2006 |
Zhang S, Zhou X, Shen A, Wang W, Alfano R, Lu H, Charles W, Yokomizo I, Tamargo M, Franz K, Gmachl C. Optical Properties of Heavily Doped n-type CdSe Quantum Dots for Intersubband Device Applications Mrs Proceedings. 959. DOI: 10.1557/Proc-0959-M06-05 |
0.518 |
|
| 2006 |
Zhou X, Zhang S, Lu H, Shen A, Wang W, Song C, Liu H, Das BB, Okoye N, Tamargo MC, Alfano RR. Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications Mrs Proceedings. 952. DOI: 10.1557/Proc-0952-F10-16 |
0.461 |
|
| 2006 |
Perez-Paz MN, Lu H, Shen A, Tamargo MC. Formation and optical properties of stacked CdSe self-assembled quantum dots on Zn xCd yMg 1-x-ySe barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1649-1655. DOI: 10.1116/1.2200383 |
0.44 |
|
| 2006 |
Lu H, Shen A, Charles W, Yokomizo I, Tamargo MC, Franz KJ, Gmachl C, Mũoz M. Optical characterization of intersubband transitions in Zn xCd 1-xSe/Zn x′Cd y′Mg 1- x′- y′Se multiple quantum well structures by contactless electroreflectance Applied Physics Letters. 89. DOI: 10.1063/1.2405385 |
0.451 |
|
| 2006 |
Lu H, Shen A, Tamargo MC, Song CY, Liu HC, Zhang SK, Alfano RR, Muñoz M. Midinfrared intersubband absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures Applied Physics Letters. 89: 131903. DOI: 10.1063/1.2354578 |
0.504 |
|
| 2006 |
Noemi Perez-Paz M, Lu H, Shen A, Jean Mary F, Akins D, Tamargo MC. Magnesium effects on CdSe self-assembled quantum dot formation on ZnxCdyMg1-x-ySe layers Journal of Crystal Growth. 294: 296-303. DOI: 10.1016/J.Jcrysgro.2006.06.048 |
0.449 |
|
| 2006 |
Lu H, Shen A, Muñoz M, Perez-Paz MN, Sohel M, Zhang SK, Alfano RR, Tamargo MC. ZnxCd1-x/Se/Znx′Cd y′Mg1-x′-y′ Se multi-quantum well structures for intersubband devices grown by MBE Physica Status Solidi (B) Basic Research. 243: 868-872. DOI: 10.1002/Pssb.200564722 |
0.504 |
|
| 2001 |
Liu HC, Dudek R, Shen A, Dupont E, Song C, Wasilewski ZR, Buchanan M. QWIPs beyond FPAs: high-speed room-temperature detectors Proceedings of Spie. 4369: 489-497. DOI: 10.1117/12.445339 |
0.352 |
|
| 2001 |
Liu HC, Dudek R, Shen A, Dupont E, Song CY, Wasilewski ZR, Buchanan M. High absorption (>90%) quantum-well infrared photodetectors Applied Physics Letters. 79: 4237-4239. DOI: 10.1063/1.1425066 |
0.454 |
|
| 2001 |
Perera AGU, Matsik SG, Yaldiz B, Liu HC, Shen A, Gao M, Wasilewski ZR, Buchanan M. Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm Applied Physics Letters. 78: 2241-2243. DOI: 10.1063/1.1361283 |
0.364 |
|
| 2001 |
Ofuchi H, Kubo T, Tabuchi M, Takeda Y, Matsukura F, Guo SP, Shen A, Ohno H. Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots Journal of Applied Physics. 89: 66-70. DOI: 10.1063/1.1330761 |
0.339 |
|
| 2001 |
Omiya T, Matsukura F, Shen A, Ohno Y, Ohno H. Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates Physica E-Low-Dimensional Systems & Nanostructures. 10: 206-209. DOI: 10.1016/S1386-9477(01)00083-2 |
0.417 |
|
| 2001 |
Liu HC, Song CY, Shen A, Gao M, Dupont E, Poole PJ, Wasilewski ZR, Buchanan M, Wilson PH, Robinson BJ, Thompson DA, Ohno Y, Ohno H. Dual-band photodetectors based on interband and intersubband transitions Infrared Physics & Technology. 42: 163-170. DOI: 10.1016/S1350-4495(01)00072-X |
0.353 |
|
| 2001 |
Sim SK, Liu H, Shen A, Gao M, Lee KF, Buchanan M, Ohno Y, Ohno H, Li E. Effect of barrier width on the performance of quantum well infrared photodetector Infrared Physics & Technology. 42: 115-121. DOI: 10.1016/S1350-4495(01)00067-6 |
0.317 |
|
| 2000 |
Dupont E, Gao M, Liu HC, Wasilewski ZR, Shen A, Załużny M, Schmidt SR, Seilmeier A. Grazing-angle intersubband absorption in n-doped GaAs multiple quantum wells Physical Review B. 61: 13050-13054. DOI: 10.1103/Physrevb.61.13050 |
0.328 |
|
| 2000 |
Liu HC, Song CY, Shen A, Gao M, Wasilewski ZR, Buchanan M. GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection Applied Physics Letters. 77: 2437-2439. DOI: 10.1063/1.1318232 |
0.463 |
|
| 2000 |
Shen A, Liu HC, Gao M, Dupont E, Buchanan M, Ehret J, Brown GJ, Szmulowicz F. Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors Applied Physics Letters. 77: 2400-2402. DOI: 10.1063/1.1317548 |
0.435 |
|
| 2000 |
Guo SP, Shen A, Yasuda H, Ohno Y, Matsukura F, Ohno H. Surfactant effect of Mn on the formation of self-organized InAs nanostructures Journal of Crystal Growth. 208: 799-803. DOI: 10.1016/S0022-0248(99)00465-0 |
0.465 |
|
| 1999 |
Matsukura F, Akiba N, Shen A, Ohno Y, Oiwa A, Katsumoto S, Iye Y, Ohno H. Magnetotransport Properties of (Ga,Mn)As/GaAs/(Ga,Mn)As Trilayer Structures Journal of the Magnetics Society of Japan. 23: 99-101. DOI: 10.3379/Jmsjmag.23.99 |
0.384 |
|
| 1999 |
Shen A, Liu HC, Szmulowicz F, Buchanan M, Gao M, Brown GJ, Ehret J. Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors Journal of Applied Physics. 86: 5232-5236. DOI: 10.1063/1.371504 |
0.433 |
|
| 1999 |
Iye Y, Oiwa A, Endo A, Katsumoto S, Matsukura F, Shen A, Ohno H, Munekata H. Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors Materials Science and Engineering B-Advanced Functional Solid-State Materials. 63: 88-95. DOI: 10.1016/S0921-5107(99)00057-4 |
0.373 |
|
| 1999 |
Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC. Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As Journal of Crystal Growth. 201202: 679-683. DOI: 10.1016/S0022-0248(98)01447-X |
0.42 |
|
| 1999 |
Guo SP, Shen A, Matsukura F, Ohno Y, Ohno H. InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates Journal of Crystal Growth. 201202: 684-688. DOI: 10.1016/S0022-0248(98)01442-0 |
0.425 |
|
| 1998 |
Guo S, Ohno H, Shen A, Ohno Y, Matsukura F. Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B Japanese Journal of Applied Physics. 37: 1527-1531. DOI: 10.1143/Jjap.37.1527 |
0.487 |
|
| 1998 |
Matsukura F, Ohno H, Shen A, Sugawara Y. Transport properties and origin of ferromagnetism in (Ga,Mn)As Physical Review B. 57. DOI: 10.1103/Physrevb.57.R2037 |
0.357 |
|
| 1998 |
Akiba N, Matsukura F, Shen A, Ohno Y, Ohno H, Oiwa A, Katsumoto S, Iye Y. Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures Applied Physics Letters. 73: 2122-2124. DOI: 10.1063/1.122398 |
0.341 |
|
| 1998 |
Ohno H, Akiba N, Matsukura F, Shen A, Ohtani K, Ohno Y. Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy Applied Physics Letters. 73: 363-365. DOI: 10.1063/1.121835 |
0.376 |
|
| 1998 |
Kuroiwa T, Yasuda T, Matsukura F, Shen A, Ohno Y, Segawa Y, Ohno H. Faraday rotation of ferromagnetic (Ga,Mn)As Electronics Letters. 34: 190-192. DOI: 10.1049/El:19980128 |
0.352 |
|
| 1998 |
Ohno H, Matsukura F, Shen A, Sugawara Y, Akiba N, Kuroiwa T. Ferromagnetic (Ga, Mn)As and its heterostructures Physica E-Low-Dimensional Systems & Nanostructures. 2: 904-908. DOI: 10.1016/S1386-9477(98)00184-2 |
0.365 |
|
| 1998 |
Guo SP, Shen A, Ohno Y, Ohno H. InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates Physica E-Low-Dimensional Systems & Nanostructures. 2: 672-677. DOI: 10.1016/S1386-9477(98)00137-4 |
0.458 |
|
| 1998 |
Matsukura F, Akiba N, Shen A, Ohno Y, Oiwa A, Katsumoto S, Iye Y, Ohno H. Magnetotransport properties of all semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As tri-layer structures Physica B-Condensed Matter. 256: 573-576. DOI: 10.1016/S0921-4526(98)00495-5 |
0.361 |
|
| 1998 |
Akiba N, Matsukura F, Ohno Y, Shen A, Ohtani K, Sakon T, Motokawa M, Ohno H. Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As Physica B-Condensed Matter. 256: 561-564. DOI: 10.1016/S0921-4526(98)00490-6 |
0.376 |
|
| 1998 |
Shen A, Ohno H, Matsukura F, Liu HC, Akiba N, Sugawara Y, Kuroiwa T, Ohno Y. Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As Physica B-Condensed Matter. 249: 809-813. DOI: 10.1016/S0921-4526(98)00319-6 |
0.378 |
|
| 1998 |
Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Matsukura F, Shen A, Sugawara Y, Ohno H. Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs Physica B-Condensed Matter. 249: 775-779. DOI: 10.1016/S0921-4526(98)00312-3 |
0.381 |
|
| 1998 |
Guo SP, Ohno H, Shen A, Matsukura F, Ohno Y. Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates Applied Surface Science. 130: 797-802. DOI: 10.1016/S0169-4332(98)00157-3 |
0.463 |
|
| 1998 |
Shen A, Ohno H, Horikoshi Y, Guo SP, Ohno Y, Matsukura F. Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study Applied Surface Science. 130: 382-386. DOI: 10.1016/S0169-4332(98)00087-7 |
0.396 |
|
| 1998 |
Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y. Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal–Insulator Transition Physica Status Solidi B-Basic Solid State Physics. 205: 167-171. DOI: 10.1002/(Sici)1521-3951(199801)205:1<167::Aid-Pssb167>3.0.Co;2-O |
0.35 |
|
| 1998 |
Katsumoto S, Oiwa A, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y. Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs Physica Status Solidi B-Basic Solid State Physics. 205: 115-118. DOI: 10.1002/(Sici)1521-3951(199801)205:1<115::Aid-Pssb115>3.0.Co;2-F |
0.326 |
|
| 1997 |
Kuroiwa T, Yasuda T, Matsukura F, Shen A, Sugawara Y, Ohno Y, Segawa Y, Ohno H. Interband Faraday Rotation in Ferromagnetic Semiconductor (Ga, Mn)As The Japan Society of Applied Physics. 1997: 248-249. DOI: 10.7567/Ssdm.1997.D-5-9 |
0.321 |
|
| 1997 |
Guo S, Ohno H, Shen A, Ohno Y, Matsukura F. Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs (211)B The Japan Society of Applied Physics. 1997: 332-333. DOI: 10.7567/Ssdm.1997.B-11-1 |
0.438 |
|
| 1997 |
Shen A, Ohno H, Matsukura F, Sugawara Y, Ohno Y, Akiba N, Kuroiwa T. (Ga,Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L73 |
0.462 |
|
| 1997 |
Shen A, Horikoshi Y, Ohno H, Guo SP. Reflection High-Energy Electron Diffraction Oscillations During Growth Of Gaas At Low Temperatures Under High As Overpressure Applied Physics Letters. 71: 1540-1542. DOI: 10.1063/1.119973 |
0.36 |
|
| 1997 |
Guo SP, Ohno H, Shen A, Matsukura F, Ohno Y. InAs self-organized quantum dashes grown on GaAs (211)B Applied Physics Letters. 70: 2738-2740. DOI: 10.1063/1.119007 |
0.482 |
|
| 1997 |
Shen A, Matsukura F, Sugawara Y, Kuroiwa T, Ohno H, Oiwa A, Endo A, Katsumoto S, Iye Y. Epitaxy and properties of diluted magnetic III–V semiconductor heterostructures Applied Surface Science. 113114: 183-188. DOI: 10.1016/S0169-4332(96)00865-3 |
0.377 |
|
| 1997 |
Matsukura F, Oiwa A, Shen A, Sugawara Y, Akiba N, Kuroiwa T, Ohno H, Endo A, Katsumoto S, Iye Y. Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor Applied Surface Science. 113114: 178-182. DOI: 10.1016/S0169-4332(96)00790-8 |
0.404 |
|
| 1997 |
Oiwa A, Katsumoto S, Endo A, Hirasawa M, Iye Y, Ohno H, Matsukura F, Shen A, Sugawara Y. Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs Solid State Communications. 103: 209-213. DOI: 10.1016/S0038-1098(97)00178-6 |
0.376 |
|
| 1997 |
Shen A, Ohno H, Matsukura F, Sugawara Y, Akiba N, Kuroiwa T, Oiwa A, Endo A, Katsumoto S, Iye Y. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs Journal of Crystal Growth. 175: 1069-1074. DOI: 10.1016/S0022-0248(96)00967-0 |
0.445 |
|
| 1996 |
Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs Applied Physics Letters. 69: 363-365. DOI: 10.1063/1.118061 |
0.395 |
|
| 1992 |
Wang H, Cui J, Shen A, Xu L, Chen Y, Shen Y. MBE Growth and Properties of Wide Band-Gap II-VI Strained-Layer Superlattice Mrs Proceedings. 242. DOI: 10.1557/PROC-242-227 |
0.321 |
|
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