| Year |
Citation |
Score |
| 2022 |
Tekcan B, van Kasteren B, Grayli SV, Shen D, Tam MC, Ban D, Wasilewski Z, Tsen AW, Reimer ME. Semiconductor nanowire metamaterial for broadband near-unity absorption. Scientific Reports. 12: 9663. PMID 35690650 DOI: 10.1038/s41598-022-13537-y |
0.319 |
|
| 2020 |
Deimert C, Goulain P, Manceau JM, Pasek W, Yoon T, Bousseksou A, Kim NY, Colombelli R, Wasilewski ZR. Realization of Harmonic Oscillator Arrays with Graded Semiconductor Quantum Wells. Physical Review Letters. 125: 097403. PMID 32915611 DOI: 10.1103/Physrevlett.125.097403 |
0.491 |
|
| 2020 |
Wen B, Deimert C, Wang S, Xu C, Rassel SS, Wasilewski Z, Ban D. Six-level hybrid extraction/injection scheme terahertz quantum cascade laser with suppressed thermally activated carrier leakage. Optics Express. 28: 26499-26508. PMID 32906922 DOI: 10.1364/Oe.400246 |
0.401 |
|
| 2020 |
Wang S, Xu C, Duan F, Wen B, Rassel SMS, Tam MC, Wasilewski Z, Wei L, Ban D. Thermal dynamic imaging of mid-infrared quantum cascade lasers with high temporal–spatial resolution Journal of Applied Physics. 128: 83106. DOI: 10.1063/5.0013344 |
0.369 |
|
| 2019 |
Brown SA, Young JF, Brum JA, Hawrylak P, Wasilewski Z. Evolution of the interband absorption threshold with the density of a two-dimensional electron gas. Physical Review. B, Condensed Matter. 54: R11082-R11085. PMID 9984991 DOI: 10.1103/Physrevb.54.R11082 |
0.392 |
|
| 2019 |
Sadeghi I, Tam MC, Wasilewski ZR. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 31210. DOI: 10.1116/1.5089919 |
0.726 |
|
| 2019 |
Hu Y, Tam MC, Wasilewski ZR. Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 32902. DOI: 10.1116/1.5088974 |
0.41 |
|
| 2019 |
Kim H, Ahn S, Wasilewski Z. Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 31209. DOI: 10.1116/1.5088967 |
0.403 |
|
| 2018 |
McRae CRH, Béjanin JH, Earnest CT, McConkey TG, Rinehart JR, Deimert C, Thomas JP, Wasilewski ZR, Mariantoni M. Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators Journal of Applied Physics. 123: 205304. DOI: 10.1063/1.5020514 |
0.4 |
|
| 2017 |
Shi Y, Gosselink D, Gharavi K, Baugh J, Wasilewski ZR. Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation Journal of Crystal Growth. 477: 7-11. DOI: 10.1016/J.Jcrysgro.2017.03.043 |
0.341 |
|
| 2015 |
Mason JD, Studenikin SA, Kam A, Wasilewski ZR, Sachrajda AS, Kycia JB. Role of metastable charge states in a quantum-dot spin-qubit readout Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.125434 |
0.417 |
|
| 2015 |
Zieliński M, Gołasa K, Molas MR, Goryca M, Kazimierczuk T, Smoleński T, Golnik A, Kossacki P, Nicolet AAL, Potemski M, Wasilewski ZR, Babiński A. Excitonic complexes in natural InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.085303 |
0.468 |
|
| 2014 |
Liang G, Dupont E, Fathololoumi S, Wasilewski ZR, Ban D, Liang HK, Zhang Y, Yu SF, Li LH, Davies AG, Linfield EH, Liu HC, Wang QJ. Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers. Scientific Reports. 4: 7083. PMID 25403796 DOI: 10.1038/Srep07083 |
0.411 |
|
| 2014 |
Skierbiszewski C, Turski H, Muziol G, Siekacz M, Sawicka M, Cywiński G, Wasilewski ZR, Porowski S. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy Journal of Physics D. 47: 73001. DOI: 10.1088/0022-3727/47/7/073001 |
0.43 |
|
| 2013 |
Xu C, Razavipour SG, Wasilewski Z, Ban D. An investigation on optimum ridge width and exposed side strips width of terahertz quantum cascade lasers with metal-metal waveguides. Optics Express. 21: 31951-9. PMID 24514790 DOI: 10.1364/Oe.21.031951 |
0.353 |
|
| 2013 |
Patimisco P, Scamarcio G, Santacroce MV, Spagnolo V, Vitiello MS, Dupont E, Laframboise SR, Fathololoumi S, Razavipour GS, Wasilewski Z. Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme. Optics Express. 21: 10172-81. PMID 23609722 DOI: 10.1364/Oe.21.010172 |
0.377 |
|
| 2013 |
Busl M, Granger G, Gaudreau L, Sánchez R, Kam A, Pioro-Ladrière M, Studenikin SA, Zawadzki P, Wasilewski ZR, Sachrajda AS, Platero G. Bipolar spin blockade and coherent state superpositions in a triple quantum dot. Nature Nanotechnology. 8: 261-5. PMID 23416792 DOI: 10.1038/Nnano.2013.7 |
0.44 |
|
| 2013 |
Razavipour SG, Dupont E, Fathololoumi S, Chan CWI, Lindskog M, Wasilewski ZR, Aers G, Laframboise SR, Wacker A, Hu Q, Ban D, Liu HC. An indirectly pumped terahertz quantum cascade laser with low injection coupling strength operating above 150 K Journal of Applied Physics. 113: 203107. DOI: 10.1063/1.4807580 |
0.423 |
|
| 2013 |
Fathololoumi S, Dupont E, Wasilewski ZR, Chan CWI, Razavipour SG, Laframboise SR, Huang S, Hu Q, Ban D, Liu HC. Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers Journal of Applied Physics. 113: 113109. DOI: 10.1063/1.4795614 |
0.404 |
|
| 2013 |
Skierbiszewski C, Siekacz M, Turski H, Muziol G, Sawicka M, Perlin P, Wasilewski ZR, Porowski S. MBE fabrication of III-N-based laser diodes and its development to industrial system Journal of Crystal Growth. 378: 278-282. DOI: 10.1016/J.Jcrysgro.2012.12.116 |
0.378 |
|
| 2013 |
Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C. Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers Journal of Crystal Growth. 367: 115-121. DOI: 10.1016/J.Jcrysgro.2012.12.026 |
0.304 |
|
| 2013 |
Studenikin S, Aers G, Granger G, Gaudreau L, Kam A, Zawadzki P, Wasilewski ZR, Sachrajda A. Coherent manipulation of three-spin states in a GaAs/AlGaAs triple dot device Physica Status Solidi (C). 10: 752-755. DOI: 10.1002/Pssc.201200655 |
0.4 |
|
| 2012 |
Studenikin SA, Aers GC, Granger G, Gaudreau L, Kam A, Zawadzki P, Wasilewski ZR, Sachrajda AS. Quantum interference between three two-spin states in a double quantum dot. Physical Review Letters. 108: 226802. PMID 23003637 DOI: 10.1103/Physrevlett.108.226802 |
0.428 |
|
| 2012 |
Fathololoumi S, Dupont E, Chan CW, Wasilewski ZR, Laframboise SR, Ban D, Mátyás A, Jirauschek C, Hu Q, Liu HC. Terahertz quantum cascade lasers operating up to ∼ 200 K with optimized oscillator strength and improved injection tunneling. Optics Express. 20: 3866-76. PMID 22418143 DOI: 10.1364/Oe.20.003866 |
0.425 |
|
| 2012 |
Skierbiszewski C, Siekacz M, Turski H, Muziol G, Sawicka M, Wolny P, Cywiński G, Marona L, Perlin P, Wiśniewski P, Albrecht M, Wasilewski ZR, Porowski S. True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 5: 112103. DOI: 10.1143/Apex.5.112103 |
0.398 |
|
| 2012 |
Skierbiszewski C, Siekacz M, Turski H, Muzioł G, Sawicka M, Feduniewicz-Żmuda A, Cywiński G, Cheze C, Grzanka S, Perlin P, Wiśniewski P, Wasilewski ZR, Porowski S. AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy Applied Physics Express. 5: 22104. DOI: 10.1143/Apex.5.022104 |
0.351 |
|
| 2012 |
Smith MJ, Usher A, Williams CDH, Shytov A, Sachrajda AS, Kam A, Wasilewski ZR. Induced currents in the quantum Hall regime: Energy storage, persistence, and I-V characteristics Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.195314 |
0.39 |
|
| 2012 |
Studenikin SA, Granger G, Kam A, Sachrajda AS, Wasilewski ZR, Poole PJ. Nonlinear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs Physical Review B. 86: 115309. DOI: 10.1103/Physrevb.86.115309 |
0.315 |
|
| 2012 |
Aers GC, Studenikin SA, Granger G, Kam A, Zawadzki P, Wasilewski ZR, Sachrajda AS. Coherent exchange and double beam splitter oscillations in a triple quantum dot Physical Review B. 86. DOI: 10.1103/Physrevb.86.045316 |
0.446 |
|
| 2012 |
Studenikin SA, Thorgrimson J, Aers GC, Kam A, Zawadzki P, Wasilewski ZR, Bogan A, Sachrajda AS. Enhanced charge detection of spin qubit readout via an intermediate state Applied Physics Letters. 101. DOI: 10.1063/1.4749281 |
0.364 |
|
| 2012 |
Pitigala PKDDP, Matsik SG, Perera AGU, Khanna SP, Li LH, Linfield EH, Wasilewski ZR, Buchanan M, Liu HC. Photovoltaic infrared detection with p-type graded barrier heterostructures Journal of Applied Physics. 111: 084505. DOI: 10.1063/1.4704695 |
0.338 |
|
| 2012 |
Dupont E, Fathololoumi S, Wasilewski ZR, Aers G, Laframboise SR, Lindskog M, Razavipour SG, Wacker A, Ban D, Liu HC. A phonon scattering assisted injection and extraction based terahertz quantum cascade laser Applied Physics Reviews. 111: 73111. DOI: 10.1063/1.3702571 |
0.42 |
|
| 2012 |
Molas M, Gołasa K, Kuldová K, Borysiuk J, Babiński A, Lapointe J, Wasilewski ZR. The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots Journal of Applied Physics. 111: 33510. DOI: 10.1063/1.3681329 |
0.475 |
|
| 2012 |
Granger G, Taubert D, Young CE, Gaudreau L, Kam A, Studenikin SA, Zawadzki P, Harbusch D, Schuh D, Wegscheider W, Wasilewski ZR, Clerk AA, Ludwig S, Sachrajda AS. Quantum interference and phonon-mediated back-action in lateral quantum-dot circuits Nature Physics. 8: 522-527. DOI: 10.1038/Nphys2326 |
0.481 |
|
| 2012 |
Gaudreau L, Granger G, Kam A, Aers GC, Studenikin SA, Zawadzki P, Pioro-Ladrière M, Wasilewski ZR, Sachrajda AS. Coherent control of three-spin states in a triple quantum dot Nature Physics. 8: 54-58. DOI: 10.1038/Nphys2149 |
0.471 |
|
| 2011 |
Hinds S, Buchanan M, Dudek R, Haffouz S, Laframboise S, Wasilewski Z, Liu HC. Near-room-temperature mid-infrared quantum well photodetector. Advanced Materials (Deerfield Beach, Fla.). 23: 5536-9. PMID 22052780 DOI: 10.1002/Adma.201103372 |
0.42 |
|
| 2011 |
Skierbiszewski C, Siekacz M, Turski H, Sawicka M, Feduniewicz-Żmuda A, Perlin P, Suski T, Wasilewski Z, Grzegory I, Porowski S. InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy. Lithuanian Journal of Physics. 51: 276-282. DOI: 10.3952/Lithjphys.51402 |
0.368 |
|
| 2011 |
Teppe F, Consejo C, Torres J, Chenaud B, Solignac P, Fathololoumi S, Wasilewski ZR, Zholudev M, Dyakonova N, Coquillat D, Fatimy AE, Buzatu P, Chaubet C, Knap W. Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors Acta Physica Polonica A. 120: 930-932. DOI: 10.12693/Aphyspola.120.930 |
0.417 |
|
| 2011 |
Molas M, Kuldová K, Borysiuk J, Wasilewski Z, Babiński A. Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique Acta Physica Polonica A. 119: 624-626. DOI: 10.12693/Aphyspola.119.624 |
0.458 |
|
| 2011 |
Turski H, Siekacz M, Sawicka M, Cywinski G, Krysko M, Grzanka S, Smalc-Koziorowska J, Grzegory I, Porowski S, Wasilewski ZR, Skierbiszewski C. Growth mechanism of InGaN by plasma assisted molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29. DOI: 10.1116/1.3590932 |
0.32 |
|
| 2011 |
Zhang R, Guo XG, Song CY, Buchanan M, Wasilewski ZR, Cao JC, Liu HC. Metal-Grating-Coupled Terahertz Quantum-Well Photodetectors Ieee Electron Device Letters. 32: 659-661. DOI: 10.1109/Led.2011.2112632 |
0.379 |
|
| 2011 |
Kazimierczuk T, Golnik A, Kossacki P, Gaj JA, Wasilewski ZR, Babinski A. Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer Physical Review B. 84: 115325. DOI: 10.1103/Physrevb.84.115325 |
0.449 |
|
| 2011 |
Smith MJ, Williams CDH, Shytov AV, Usher A, Sachrajda AS, Kam A, Wasilewski ZR. Quantum Hall induced currents and the magnetoresistance of a quantum point contact New Journal of Physics. 13: 123020. DOI: 10.1088/1367-2630/13/12/123020 |
0.45 |
|
| 2011 |
Fathololoumi S, Dupont E, Razavipour SG, Laframboise SR, Parent G, Wasilewski Z, Liu HC, Ban D. On metal contacts of terahertz quantum cascade lasers with a metal-metal waveguide Semiconductor Science and Technology. 26: 105021. DOI: 10.1088/0268-1242/26/10/105021 |
0.344 |
|
| 2011 |
Siekacz M, Sawicka M, Turski H, Cywiński G, Khachapuridze A, Perlin P, Suski T, Boćkowski M, Smalc-Koziorowska J, Kryśko M, Kudrawiec R, Syperek M, Misiewicz J, Wasilewski Z, Porowski S, et al. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 110: 63110. DOI: 10.1063/1.3639292 |
0.413 |
|
| 2011 |
Yang Y, Liu HC, Shen WZ, Gupta JA, Luo H, Buchanan M, Wasilewski ZR. GaAs-based near-infrared up-conversion device fabricated by wafer fusion Electronics Letters. 47: 393-395. DOI: 10.1049/El.2010.3543 |
0.387 |
|
| 2011 |
Perera AGU, Matsik SG, Pitigala DP, Lao YF, Khanna SP, Li LH, Linfield EH, Wasilewski ZR, Buchanan M, Wu XH, Liu HC. Effects of graded barriers on the operation of split-off band infrared detectors Infrared Physics & Technology. 54: 296-301. DOI: 10.1016/J.Infrared.2010.12.033 |
0.347 |
|
| 2010 |
Fathololoumi S, Dupont E, Razavipour SG, Laframboise SR, Delage A, Wasilewski ZR, Bezinger A, Rafi GZ, Safavi-Naeini S, Ban D, Liu HC. Electrically switching transverse modes in high power THz quantum cascade lasers. Optics Express. 18: 10036-48. PMID 20588857 DOI: 10.1364/Oe.18.010036 |
0.37 |
|
| 2010 |
Lao YF, Jayaweera PVV, Matsik SG, Perera AGU, Liu HC, Buchanan M, Wasilewski ZR. Analysis of Dark Current Mechanisms for Split-Off Band Infrared Detectors at High Temperatures Ieee Transactions On Electron Devices. 57: 1230-1236. DOI: 10.1109/Ted.2010.2046065 |
0.359 |
|
| 2010 |
Apalkov V, Ariyawansa G, Perera AGU, Buchanan M, Wasilewski ZR, Liu HC. Polarization Sensitivity of Quantum Well Infrared Photodetector Coupled to a Metallic Diffraction Grid Ieee Journal of Quantum Electronics. 46: 877-883. DOI: 10.1109/Jqe.2010.2040461 |
0.316 |
|
| 2010 |
Fathololoumi S, Dupont E, Ban D, Graf M, Laframboise SR, Wasilewski ZR, Liu HC. Time-Resolved Thermal Quenching of THz Quantum Cascade Lasers Ieee Journal of Quantum Electronics. 46: 396-404. DOI: 10.1109/Jqe.2009.2031250 |
0.438 |
|
| 2010 |
Granger G, Gaudreau L, Kam A, Pioro-Ladrière M, Studenikin SA, Wasilewski ZR, Zawadzki P, Sachrajda AS. Three-dimensional transport diagram of a triple quantum dot Physical Review B. 82: 75304. DOI: 10.1103/Physrevb.82.075304 |
0.463 |
|
| 2010 |
Fedorych OM, Potemski M, Studenikin SA, Gupta JA, Wasilewski ZR, Dmitriev IA. Quantum oscillations in the microwave magnetoabsorption of a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.201302 |
0.447 |
|
| 2010 |
Yuyang H, Liu HC, Wasilewski ZR, Buchanan M, Laframboise SR, Chen Y, Guoxin C, Lifeng B, Hui Y, Yaohui Z. High contrast ratio, high uniformity multiple quantum well spatial light modulators Journal of Semiconductors. 31: 34007. DOI: 10.1088/1674-4926/31/3/034007 |
0.426 |
|
| 2010 |
Ariyawansa G, Aytac Y, Perera AGU, Matsik SG, Buchanan M, Wasilewski ZR, Liu HC. Five-band bias-selectable integrated quantum well detector in an n-p-n architecture Applied Physics Letters. 97: 231102. DOI: 10.1063/1.3524236 |
0.359 |
|
| 2010 |
Lao YF, Pitigala PKDDP, Perera AGU, Liu HC, Buchanan M, Wasilewski ZR, Choi KK, Wijewarnasuriya P. Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection Applied Physics Letters. 97: 91104. DOI: 10.1063/1.3486169 |
0.358 |
|
| 2010 |
Wasilewski ZR, Dupont E, Weyher JL, Laframboise S, Buchanan M, Liu HC. On the existence of submicron diameter current shunts in morphologically perfect device layers Journal of Crystal Growth. 312: 926-932. DOI: 10.1016/J.Jcrysgro.2010.01.007 |
0.41 |
|
| 2009 |
Wang CY, Kuznetsova L, Gkortsas VM, Diehl L, Kärtner FX, Belkin MA, Belyanin A, Li X, Ham D, Schneider H, Grant P, Song CY, Haffouz S, Wasilewski ZR, Liu HC, et al. Mode-locked pulses from mid-infrared quantum cascade lasers. Optics Express. 17: 12929-43. PMID 19654698 DOI: 10.1364/Oe.17.012929 |
0.369 |
|
| 2009 |
Ariyawansa G, Jayaweera PV, Perera AG, Matsik SG, Buchanan M, Wasilewski ZR, Liu HC. Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device. Optics Letters. 34: 2036-8. PMID 19571991 DOI: 10.1364/Ol.34.002036 |
0.338 |
|
| 2009 |
Yang Y, Liu HC, Shen WZ, Li N, Lu W, Wasilewski ZR, Buchanan M. Optimal doping density for quantum-well infrared photodetector performance Ieee Journal of Quantum Electronics. 45: 623-628. DOI: 10.1109/Jqe.2009.2013119 |
0.406 |
|
| 2009 |
Vachon M, Raymond S, Babinski A, Lapointe J, Wasilewski Z, Potemski M. Energy shell structure of a single InAs/GaAs quantum dot with a spin-orbit interaction Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.165427 |
0.355 |
|
| 2009 |
Li H, Cao JC, Luo H, Laframboise SR, Wasilewski ZR, Liu HC. The effect of phonon extraction level separation on the performance of three-well resonant-phonon terahertz quantum-cascade lasers Semiconductor Science and Technology. 24: 65012. DOI: 10.1088/0268-1242/24/6/065012 |
0.395 |
|
| 2009 |
Tan ZY, Guo XG, Cao JC, Li H, Wang X, Feng SL, Wasilewski ZR, Liu HC. Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors Semiconductor Science and Technology. 24: 115014. DOI: 10.1088/0268-1242/24/11/115014 |
0.387 |
|
| 2009 |
Skierbiszewski C, Wasilewski ZR, Grzegory I, Porowski S. Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission Journal of Crystal Growth. 311: 1632-1639. DOI: 10.1016/J.Jcrysgro.2008.12.040 |
0.338 |
|
| 2009 |
Haffouz S, Raymond S, Lu ZG, Barrios PJ, Roy-Guay D, Wu X, Liu JR, Poitras D, Wasilewski ZR. Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth Journal of Crystal Growth. 311: 1803-1806. DOI: 10.1016/J.Jcrysgro.2008.10.107 |
0.456 |
|
| 2009 |
Perera A, Jayaweera P, Matsik S, Liu H, Buchanan M, Wasilewski Z. Operating temperature and the responsivity of split-off band detectors Infrared Physics & Technology. 52: 241-246. DOI: 10.1016/J.Infrared.2009.05.024 |
0.377 |
|
| 2009 |
Liu HC, Song CY, Wasilewski ZR, Gupta JA, Buchanan M. Phonon mediated photodetector Infrared Physics and Technology. 52: 285-288. DOI: 10.1016/J.Infrared.2009.05.012 |
0.501 |
|
| 2009 |
Babinski A, Golnik A, Borysiuk J, Kret S, Kossacki P, Gaj JA, Raymond S, Potemski M, Wasilewski ZR. Three-dimensional localization of excitons in the InAs/GaAs wetting layer – magnetospectroscopic study Physica Status Solidi B-Basic Solid State Physics. 246: 850-853. DOI: 10.1002/Pssb.200880601 |
0.437 |
|
| 2008 |
Liu HC, Aslan B, Gupta JA, Wasilewski ZR, Aers GC, Springthorpe AJ, Buchanan M. Quantum dots for terahertz generation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384211. PMID 21693819 DOI: 10.1088/0953-8984/20/38/384211 |
0.505 |
|
| 2008 |
Babiński A, Czyż M, Golnik A, Borysiuk J, Kret S, Raymond S, Lapointe J, Wasilewski ZR. Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer Acta Physica Polonica A. 114: 1055-1060. DOI: 10.12693/Aphyspola.114.1055 |
0.462 |
|
| 2008 |
Lu ZG, Liu JR, Zhang XP, Raymond S, Poole PJ, Barrios PJ, Poitras D, Haffouz S, Wasilewski Z, Pakulski G. Multiwavelength quantum-dot semiconductor fiber ring laser Proceedings of Spie. 7135: 713521. DOI: 10.1117/12.803181 |
0.435 |
|
| 2008 |
Liu HC, Luo H, Song C, Wasilewski ZR, SpringThorpe AJ, Cao JC. Terahertz Quantum Well Photodetectors Ieee Journal of Selected Topics in Quantum Electronics. 14: 374-377. DOI: 10.1109/Jstqe.2007.910710 |
0.492 |
|
| 2008 |
Babi?ski A, Borysiuk J, Kret S, Czyz M, Golnik A, Raymond S, Wasilewski ZR. Natural quantum dots in the InAsGaAs wetting layer Applied Physics Letters. 92. DOI: 10.1063/1.2918836 |
0.487 |
|
| 2008 |
Boucherif A, Ban D, Luo H, Dupont E, Wasilewski ZR, Liu HC, Paltiel Y, Raizman A, Sher A. InAsSb based mid-infrared optical upconversion devices operable at thermoelectric temperatures Electronics Letters. 44: 312-313. DOI: 10.1049/El:20082782 |
0.327 |
|
| 2008 |
Luo H, Laframboise SR, Wasilewski ZR, Liu HC, Cao JC. Effects of extraction barrier width on performance of terahertz quantum-cascade lasers Electronics Letters. 44: 630-631. DOI: 10.1049/El:20080726 |
0.392 |
|
| 2008 |
Studenikin SA, Fedorych ON, Maude DK, Potemski M, Sachrajda AS, Wasilewski ZR, Gupta JA, Magarill LI. A quasi-classical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples Physica E: Low-Dimensional Systems and Nanostructures. 40: 1424-1426. DOI: 10.1016/J.Physe.2007.09.134 |
0.42 |
|
| 2008 |
Babinski A, Potemski M, Raymond S, Wasilewski ZR. Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer Physica E-Low-Dimensional Systems & Nanostructures. 40: 2078-2080. DOI: 10.1016/J.Physe.2007.09.110 |
0.469 |
|
| 2008 |
Piot BA, Maude DK, Henini M, Wasilewski ZR, Gupta JA, Gennser U, Cavanna A, Mailly D, Airey R, Hill G. Determination of the Landau level shape via the transition to the spin polarized state in the integer quantum Hall effect Physica E: Low-Dimensional Systems and Nanostructures. 40: 1200-1201. DOI: 10.1016/J.Physe.2007.08.104 |
0.375 |
|
| 2008 |
Siekacz M, Feduniewicz-Żmuda A, Cywiński G, Kryśko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C. Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy. Journal of Crystal Growth. 310: 3983-3986. DOI: 10.1016/J.Jcrysgro.2008.06.011 |
0.465 |
|
| 2007 |
Korkusinski M, Hawrylak P, Babinski A, Potemski M, Raymond S, Wasilewski Z. Optical readout of charge and spin in a self-assembled quantum dot in a strong magnetic field Europhysics Letters (Epl). 79: 47005. DOI: 10.1209/0295-5075/79/47005 |
0.415 |
|
| 2007 |
Studenikin SA, Sachrajda AS, Gupta JA, Wasilewski ZR, Fedorych OM, Byszewski M, Maude DK, Potemski M, Hilke M, West KW, Pfeiffer LN. Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.165321 |
0.304 |
|
| 2007 |
Piot BA, Maude DK, Henini M, Wasilewski ZR, Gupta JA, Friedland KJ, Hey R, Ploog KH, Gennser U, Cavanna A, Mailly D, Airey R, Hill G. Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.155332 |
0.374 |
|
| 2007 |
Kershaw TJ, Usher A, Sachrajda AS, Gupta J, Wasilewski ZR, Elliott M, Ritchie DA, Simmons MY. Decay of long-lived quantum Hall induced currents in 2D electron systems New Journal of Physics. 9: 71-71. DOI: 10.1088/1367-2630/9/3/071 |
0.39 |
|
| 2007 |
Liu HC, Song CY, Wasilewski ZR, Gupta JA, Buchanan M. Fano resonance mediated by intersubband-phonon coupling Applied Physics Letters. 91. DOI: 10.1063/1.2790845 |
0.416 |
|
| 2007 |
Luo H, Laframboise SR, Wasilewski ZR, Aers GC, Liu HC, Cao JC. Terahertz quantum-cascade lasers based on a three-well active module Applied Physics Letters. 90: 41112. DOI: 10.1063/1.2437071 |
0.441 |
|
| 2007 |
Aslan B, Lockwood DJ, Wasilewski ZR, Liu HC. Electronic Raman scattering from holes in InAs/GaAs self-assembled quantum dots Electronics Letters. 43: 1162-1164. DOI: 10.1049/El:20072025 |
0.438 |
|
| 2007 |
Luo H, Laframboise SR, Wasilewski ZR, Liu HC. Effects of injector barrier on performance of terahertz quantum-cascade lasers Electronics Letters. 43: 633-635. DOI: 10.1049/El:20070578 |
0.425 |
|
| 2007 |
Skierbiszewski C, Siekacz M, Perlin P, Feduniewicz-Żmuda A, Cywiński G, Grzegory I, Leszczyński M, Wasilewski ZR, Porowski S. Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE Journal of Crystal Growth. 305: 346-354. DOI: 10.1016/J.Jcrysgro.2007.04.002 |
0.345 |
|
| 2007 |
Liu HC, Luo H, Song CY, Wasilewski ZR, Thorpe AJS, Cao JC. Design of terahertz quantum well photodetectors Infrared Physics & Technology. 50: 191-193. DOI: 10.1016/J.Infrared.2006.10.026 |
0.464 |
|
| 2006 |
Ban D, Wächter M, Liu HC, Wasilewski ZR, Buchanan M, Aers GC. Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect Journal of Vacuum Science and Technology. 24: 778-782. DOI: 10.1116/1.2174020 |
0.436 |
|
| 2006 |
Aslan B, Liu HC, Gupta JA, Wasilewski ZR, Aers GC, Raymond S, Buchanan M. Observation of resonant tunneling through a self-assembled InAs quantum dot layer Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 704-707. DOI: 10.1116/1.2167085 |
0.46 |
|
| 2006 |
Dupont E, Wasilewski ZR, Liu HC. Terahertz Emission in Asymmetric Quantum Wells by Frequency Mixing of Midinfrared Waves Ieee Journal of Quantum Electronics. 42: 1157-1174. DOI: 10.1109/Jqe.2006.882877 |
0.431 |
|
| 2006 |
Desrat W, Maude DK, Wasilewski ZR, Airey R, Hill G. Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well Physical Review B. 74: 193317. DOI: 10.1103/Physrevb.74.193317 |
0.345 |
|
| 2006 |
Babinski A, Potemski M, Raymond S, Lapointe J, Wasilewski ZR. Emission from a highly excited single InAs-GaAs quantum dot in magnetic fields : An excitonic Fock-Darwin diagram Physical Review B. 74: 155301. DOI: 10.1103/Physrevb.74.155301 |
0.403 |
|
| 2006 |
Pioro-Ladrière M, Usher A, Sachrajda A, Lapointe J, Gupta J, Wasilewski Z, Studenikin S, Elliott M. Influence of the long-lived quantum Hall potential on the characteristics of quantum devices Physical Review B. 73: 75309. DOI: 10.1103/Physrevb.73.075309 |
0.454 |
|
| 2006 |
Aslan B, Liu HC, Gupta JA, Wasilewski ZR, Aers GC, Raymond S, Buchanan M. Observation of resonant tunneling through a self-assembled InAs quantum dot layer Applied Physics Letters. 88: 43103. DOI: 10.1063/1.2164926 |
0.461 |
|
| 2006 |
Luo H, Ban D, Liu HC, Wasilewski ZR, Buchanan M. Optical upconverter with integrated heterojunction phototransistor and light-emitting diode Applied Physics Letters. 88. DOI: 10.1063/1.2162685 |
0.31 |
|
| 2006 |
Long A, Pioro-Ladrière M, Davies J, Sachrajda A, Gaudreau L, Zawadzki P, Lapointe J, Gupta J, Wasilewski Z, Studenikin S. The origin of switching noise in GaAs/AlGaAs lateral gated devices Physica E: Low-Dimensional Systems and Nanostructures. 34: 553-556. DOI: 10.1016/J.Physe.2006.03.118 |
0.417 |
|
| 2006 |
Babinski A, Potemski M, Raymond S, Korkusinski M, Sheng W, Hawrylak P, Wasilewski Z. Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields Physica E: Low-Dimensional Systems and Nanostructures. 34: 288-291. DOI: 10.1016/J.Physe.2006.03.076 |
0.464 |
|
| 2006 |
Pioro-Ladrière M, Usher A, Sachrajda AS, Elliott M, Lapointe J, Gupta J, Wasilewski ZR, Studenikin S. Hysteretic effects in lateral nanostructures caused by long-lived quantum-Hall eddy currents Physica E-Low-Dimensional Systems & Nanostructures. 34: 476-479. DOI: 10.1016/J.Physe.2006.03.020 |
0.456 |
|
| 2006 |
Gupta JA, Sproule GI, Wu X, Wasilewski ZR. Molecular beam epitaxy growth of 1.55 μ m GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence Journal of Crystal Growth. 291: 86-93. DOI: 10.1016/J.Jcrysgro.2006.02.027 |
0.412 |
|
| 2006 |
Babinski A, Potemski M, Raymond S, Lapointe J, Wasilewski ZR. Fock-Darwin spectrum of a single InAs/GaAs quantum dot Physica Status Solidi (C). 3: 3748-3751. DOI: 10.1002/Pssc.200671548 |
0.433 |
|
| 2005 |
Liu HC, Luo H, Song CY, Wasilewski ZR, SpringThorpe AJ. Terahertz quantum well photodetectors Proceedings of Spie. 6010: 601005. DOI: 10.1117/12.629953 |
0.451 |
|
| 2005 |
Ortner G, Oulton R, Kurtze H, Schwab M, Yakovlev DR, Bayer M, Fafard S, Wasilewski Z, Hawrylak P. Energy relaxation of electrons in InAs/GaAs quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.165353 |
0.455 |
|
| 2005 |
Bardot C, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P. Exciton lifetime inInAs∕GaAsquantum dot molecules Physical Review B. 72. DOI: 10.1103/Physrevb.72.035314 |
0.466 |
|
| 2005 |
Ulrich SM, Benyoucef M, Michler P, Baer N, Gartner P, Jahnke F, Schwab M, Kurtze H, Bayer M, Fafard S, Wasilewski Z, Forchel A. Correlated photon-pair emission from a charged single quantum dot Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235328 |
0.434 |
|
| 2005 |
Fletcher R, Tsaousidou M, Smith T, Coleridge PT, Wasilewski ZR, Feng Y. Two-band electron transport in a double quantum well Physical Review B. 71. DOI: 10.1103/Physrevb.71.155310 |
0.416 |
|
| 2005 |
Ortner G, Yugova I, Baldassarri Höger Von Högersthal G, Larionov A, Kurtze H, Yakovlev DR, Bayer M, Fafard S, Wasilewski Z, Hawrylak P, Lyanda-Geller YB, Reinecke TL, Babinski A, Potemski M, Timofeev VB, et al. Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.125335 |
0.47 |
|
| 2005 |
Skierbiszewski C, Perlin P, Grzegory I, Wasilewski ZR, Siekacz M, Feduniewicz A, Wisniewski P, Borysiuk J, Prystawko P, Kamler G, Suski T, Porowski S. High power blue?violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 20: 809-813. DOI: 10.1088/0268-1242/20/8/030 |
0.406 |
|
| 2005 |
Sun HD, Calvez S, Dawson MD, Gupta JA, Sproule GI, Wu X, Wasilewski ZR. Role of Sb in the growth and optical properties of 1.55 μm GaInN (Sb) AsGaNAs quantum-well structures by molecular-beam epitaxy Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2123383 |
0.451 |
|
| 2005 |
Liu HC, Wächter M, Ban D, Wasilewski ZR, Buchanan M, Aers GC, Cao JC, Feng SL, Williams BS, Hu Q. Effect of doping concentration on the performance of terahertz quantum-cascade lasers Applied Physics Letters. 87: 141102. DOI: 10.1063/1.2067699 |
0.442 |
|
| 2005 |
Luo H, Liu HC, Song CY, Wasilewski ZR. Background-limited terahertz quantum-well photodetector Applied Physics Letters. 86: 231103. DOI: 10.1063/1.1947377 |
0.477 |
|
| 2005 |
Ban D, Luo H, Liu HC, Wasilewski ZR, Paltiel Y, Raizman A, Sher A. Midinfrared optical upconverter Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1921330 |
0.316 |
|
| 2005 |
Skierbiszewski C, Dybko K, Knap W, Siekacz M, Krupczyński W, Nowak G, Boćkowski M, Łusakowski J, Wasilewski ZR, Maude D, Suski T, Porowski S. High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy Applied Physics Letters. 86: 102106. DOI: 10.1063/1.1873056 |
0.351 |
|
| 2005 |
Rinzan MBM, Perera AGU, Matsik SG, Liu HC, Wasilewski ZR, Buchanan M. AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold Applied Physics Letters. 86: 71112. DOI: 10.1063/1.1867561 |
0.404 |
|
| 2005 |
Skierbiszewski C, Wasilewski ZR, Siekacz M, Feduniewicz A, Perlin P, Wisniewski P, Borysiuk J, Grzegory I, Leszczynski M, Suski T, Porowski S. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 86: 11114. DOI: 10.1063/1.1846143 |
0.351 |
|
| 2005 |
Ortner G, Yugova I, Larionov A, Baldassarri H.v.h. G, Bayer M, Hawrylak P, Fafard S, Wasilewski Z. Experimental demonstration of coherent coupling of two quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 26: 281-285. DOI: 10.1016/J.Physe.2004.08.064 |
0.488 |
|
| 2005 |
Babinski A, Awirothananon S, Lapointe J, Wasilewski Z, Raymond S, Potemski M. Single-dot spectroscopy in high magnetic fields Physica E-Low-Dimensional Systems & Nanostructures. 26: 190-193. DOI: 10.1016/J.Physe.2004.08.050 |
0.445 |
|
| 2005 |
Langbein W, Borri P, Woggon U, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P, Stavarache V, Reuter D, Wieck A. Coherent dynamics in InGaAs quantum dots and quantum dot molecules Physica E: Low-Dimensional Systems and Nanostructures. 26: 400-407. DOI: 10.1016/J.Physe.2004.08.004 |
0.495 |
|
| 2005 |
Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakieła R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Boćkowski M, Porowski S. Control of Mg doping of GaN in RF-plasma molecular beam epitaxy Journal of Crystal Growth. 278: 443-448. DOI: 10.1016/J.Jcrysgro.2005.01.004 |
0.328 |
|
| 2004 |
Raymond S, Studenikin S, Sachrajda A, Wasilewski Z, Cheng SJ, Sheng W, Hawrylak P, Babinski A, Potemski M, Ortner G, Bayer M. Excitonic energy shell structure of self-assembled InGaAs/GaAs quantum dots. Physical Review Letters. 92: 187402. PMID 15169530 DOI: 10.1103/Physrevlett.92.187402 |
0.46 |
|
| 2004 |
Babinski A, Raymond S, Wasilewski Z, Lapointe J, Potemski A. Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots Acta Physica Polonica A. 105: 547-552. DOI: 10.12693/Aphyspola.105.547 |
0.445 |
|
| 2004 |
Piot BA, Maude DK, Wasilewski ZR, Friedland KJ, Hey R, Ploog KH, Eaves L, Henini M, Airey R, Hill G. Further Evidence For A Collapse Of The Exchange-Enhanced Spin Splitting In Two Dimensional Systems International Journal of Modern Physics B. 18: 3597-3602. DOI: 10.1142/S0217979204027098 |
0.341 |
|
| 2004 |
Dubowski JJ, Zhang XR, Xu X, Lefebvre J, Wasilewski ZR. Laser-induced bandgap engineering for multicolor detection with a GaAs/AlGaAs quantum well infrared photodetector Proceedings of Spie. 5339: 93-99. DOI: 10.1117/12.538369 |
0.44 |
|
| 2004 |
Luo H, Ban D, Liu HC, SpringThorpe AJ, Wasilewski ZR, Buchanan M, Glew R. 1.5 μm to 0.87 μm optical upconversion using wafer fusion technology Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 788. DOI: 10.1116/1.1689300 |
0.428 |
|
| 2004 |
Dubowski JJ, Song CY, Lefebvre J, Wasilewski Z, Aers G, Liu HC. Laser-induced selective area tuning of GaAs/AlGaAs quantum well microstructures for two-color IR detector operation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 887. DOI: 10.1116/1.1676377 |
0.434 |
|
| 2004 |
Ciorga M, Pioro-Ladrière M, Zawadzki P, Lapointe J, Wasilewski Z, Sachrajda AS. Coulomb and spin blockade of two few-electron quantum dots in series in the cotunneling regime Physical Review B. 70. DOI: 10.1103/Physrevb.70.235306 |
0.452 |
|
| 2004 |
Ortner G, Yakovlev DR, Bayer M, Rudin S, Reinecke TL, Fafard S, Wasilewski Z, Forchel A. Temperature dependence of the zero-phonon linewidth in InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 70: 201301-1-201301-4. DOI: 10.1103/Physrevb.70.201301 |
0.492 |
|
| 2004 |
Fletcher R, Smith T, Tsaousidou M, Coleridge PT, Wasilewski ZR, Feng Y. Thermopower of a double quantum well in a parallel magnetic field Physical Review B. 70: 155333. DOI: 10.1103/Physrevb.70.155333 |
0.398 |
|
| 2004 |
Huels J, Weis J, Smet J, Klitzing Kv, Wasilewski ZR. Long time relaxation phenomena of a two-dimensional electron system within integer quantum Hall plateau regimes after magnetic field sweeps Physical Review B. 69: 85319. DOI: 10.1103/Physrevb.69.085319 |
0.363 |
|
| 2004 |
Rafael C, Fletcher R, Coleridge PT, Feng Y, Wasilewski ZR. Thermopower and weak localization Semiconductor Science and Technology. 19: 1291-1299. DOI: 10.1088/0268-1242/19/11/014 |
0.312 |
|
| 2004 |
Ban D, Luo H, Liu HC, Wasilewski ZR, SpringThorpe AJ, Glew R, Buchanan M. Optimized GaAs∕AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices Journal of Applied Physics. 96: 5243-5248. DOI: 10.1063/1.1785867 |
0.439 |
|
| 2004 |
Babinski A, Awirothananon S, Raymond S, Studenikin S, Hawrylak P, Cheng S, Sheng W, Wasilewski Z, Potemski M, Sachrajda A. Photoluminescence excitation spectroscopy of InAs/GaAs quantum dots in high magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 603-606. DOI: 10.1016/J.Physe.2003.12.080 |
0.412 |
|
| 2004 |
Skierbiszewski C, Wasilewski Z, Siekacz M, Feduniewicz A, Pastuszka B, Grzegory I, Leszczynski M, Porowski S. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy Physica Status Solidi (a). 201: 320-323. DOI: 10.1002/Pssa.200303961 |
0.359 |
|
| 2003 |
Ortner G, Bayer M, Larionov A, Timofeev VB, Forchel A, Lyanda-Geller YB, Reinecke TL, Hawrylak P, Fafard S, Wasilewski Z. Fine structure of excitons in InAs/GaAs coupled auantum dots: a sensitive test of electronic coupling. Physical Review Letters. 90: 086404. PMID 12633447 DOI: 10.1103/Physrevlett.90.086404 |
0.468 |
|
| 2003 |
Liu H, Song C, Wasilewski Z, SpringThorpe A, Cao J, Dharma-wardana C, Aers G, Lockwood D, Gupta J. Coupled electron-phonon modes in optically pumped resonant intersubband lasers Physical Review Letters. 90: 77402-77402. PMID 12633270 DOI: 10.1103/Physrevlett.90.077402 |
0.359 |
|
| 2003 |
Liu HC, Dudek R, Oogarah T, Grant PD, Wasilewski ZR, Schneider H, Steinkogler S, Walther M, Koidl P. Swept away [quantum-well infrared photodetectors] Ieee Circuits & Devices. 19: 9-16. DOI: 10.1109/Mcd.2003.1263454 |
0.424 |
|
| 2003 |
Smith T, Tsaousidou M, Fletcher R, Coleridge PT, Wasilewski ZR, Feng Y. Thermopower of a double quantum well based on GaAs Physical Review B. 67: 155328. DOI: 10.1103/Physrevb.67.155328 |
0.398 |
|
| 2003 |
Matsik SG, Rinzan MBM, Perera AGU, Liu HC, Wasilewski ZR, Buchanan M. Cutoff tailorability of heterojunction terahertz detectors Applied Physics Letters. 82: 139-141. DOI: 10.1063/1.1534409 |
0.374 |
|
| 2003 |
Duboz J-, Liu HC, Wasilewski ZR, Byloss M, Dudek R. Tunnel current in quantum dot infrared photodetectors Journal of Applied Physics. 93: 1320-1322. DOI: 10.1063/1.1528293 |
0.512 |
|
| 2003 |
Liu HC, Duboz J-, Dudek R, Wasilewski ZR, Fafard S, Finnie P. Quantum dot infrared photodetectors Physica E-Low-Dimensional Systems & Nanostructures. 17: 631-633. DOI: 10.1016/S1386-9477(02)00913-X |
0.484 |
|
| 2003 |
Bayer M, Ortner G, Larionov A, Kress A, Forchel A, Hawrylak P, Hinzer K, Korkusinski M, Fafard S, Wasilewski Z, Reinecke TL, Lyanda-Geller Y. Entangled exciton states in quantum dot molecules Proceedings of Spie - the International Society For Optical Engineering. 5023: 522-525. DOI: 10.1016/S1386-9477(01)00462-3 |
0.461 |
|
| 2002 |
Liu HC, Dupont E, Byloos M, Buchanan M, Song C-, Wasilewski ZR. Qwip-Led Pixelless Thermal Imaging Device International Journal of High Speed Electronics and Systems. 12: 891-905. DOI: 10.1142/S0129156402001733 |
0.329 |
|
| 2002 |
Liu HC, Dudek R, Shen A, Dupont E, Song C-, Wasilewski ZR, Buchanan M. QWIPs DESIGNED FOR HIGH ABSORPTION AND HIGH OPERATING TEMPERATURE International Journal of High Speed Electronics and Systems. 12: 803-819. DOI: 10.1142/S0129156402001708 |
0.402 |
|
| 2002 |
Finnie P, Riel BJ, Wasilewski ZR. Reflection high-energy electron diffraction observation of the dynamics of semiconductor quantum dot formation and decay Journal of Vacuum Science & Technology B. 20: 2210-2213. DOI: 10.1116/1.1515912 |
0.504 |
|
| 2002 |
Dupont E, Byloos M, Gao M, Buchanan M, Song C-, Wasilewski ZR, Liu HC. Pixelless thermal imaging with integrated quantum-well infrared photodetector and light-emitting diode Ieee Photonics Technology Letters. 14: 182-184. DOI: 10.1109/68.980504 |
0.408 |
|
| 2002 |
Oogarah T, Liu HC, Dupont E, Wasilewski ZR, Byloos M, Buchanan M. High absorption GaAs/AlGaAs quantum well infrared photodetectors Semiconductor Science and Technology. 17. DOI: 10.1088/0268-1242/17/9/101 |
0.445 |
|
| 2002 |
Duboz JY, Gupta JA, Byloss M, Aers GC, Liu HC, Wasilewski ZR. Intersubband transitions in InGaNAs/GaAs quantum wells Applied Physics Letters. 81: 1836-1838. DOI: 10.1063/1.1500434 |
0.411 |
|
| 2002 |
Aslan B, Liu HC, Buchanan M, Wasilewski ZR. Erratum: “Short wavelength (1–4 μm) infrared detectors using intersubband transitions in GaAs-based quantum wells” [J. Appl. Phys. 83, 6178 (1998)] Journal of Applied Physics. 91: 10230-10230. DOI: 10.1063/1.1476404 |
0.462 |
|
| 2002 |
Liu HC, Oogarah T, Dupont E, Wasilewski ZR, Byloos M, Buchanan M, Szmulowicz E, Ehret J, Brown GJ. p-type quantum well infrared photodetectors covering wide spectrum Electronics Letters. 38: 909-911. DOI: 10.1049/El:20020644 |
0.444 |
|
| 2002 |
Korkusinski M, Hawrylak P, Bayer M, Ortner G, Forchel A, Fafard S, Wasilewski Z. Entangled states of electron-hole complex in a single InAs/GaAs coupled quantum dot molecule Physica E: Low-Dimensional Systems and Nanostructures. 13: 610-615. DOI: 10.1016/S1386-9477(02)00198-4 |
0.492 |
|
| 2002 |
Desrat W, Maude DK, Potemski M, Portal JC, Wasilewski ZR, Hill G. Resistively detected NMR in the quantum Hall regime Physica E-Low-Dimensional Systems & Nanostructures. 12: 149-151. DOI: 10.1016/S1386-9477(01)00289-2 |
0.384 |
|
| 2002 |
Riel BJ, Hinzer K, Moisa S, Fraser J, Finnie P, Piercy P, Fafard S, Wasilewski ZR. Inas/Gaas(100) Self-Assembled Quantum Dots, Arsenic Pressure And Capping Effects Journal of Crystal Growth. 236: 145-154. DOI: 10.1016/S0022-0248(01)02391-0 |
0.38 |
|
| 2001 |
Bayer M, Hawrylak P, Hinzer K, Fafard S, Korkusinski M, Wasilewski ZR, Stern O, Forchel A. Coupling and entangling of quantum states in quantum dot molecules. Science (New York, N.Y.). 291: 451-3. PMID 11161192 DOI: 10.1126/Science.291.5503.451 |
0.477 |
|
| 2001 |
Maude DK, Rigal LB, Desrat W, Potemski M, Portal JC, Eaves L, Wasilewski ZR, Toropov AI, Hill G. Breakdown of the Quantum Hall Effect Acta Physica Polonica A. 100: 213-226. DOI: 10.12693/Aphyspola.100.213 |
0.471 |
|
| 2001 |
Liu HC, Dudek R, Shen A, Dupont E, Song C, Wasilewski ZR, Buchanan M. QWIPs beyond FPAs: high-speed room-temperature detectors Proceedings of Spie. 4369: 489-497. DOI: 10.1117/12.445339 |
0.482 |
|
| 2001 |
Dupont E, Gao M, Buchanan M, Wasilewski ZR, Liu HC. Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/5/101 |
0.381 |
|
| 2001 |
Liu HC, Dudek R, Shen A, Dupont E, Song CY, Wasilewski ZR, Buchanan M. High absorption (>90%) quantum-well infrared photodetectors Applied Physics Letters. 79: 4237-4239. DOI: 10.1063/1.1425066 |
0.481 |
|
| 2001 |
Allen CN, Finnie P, Raymond S, Wasilewski ZR, Fafard S. Inhomogeneous broadening in quantum dots with ternary aluminum alloys Applied Physics Letters. 79: 2701-2703. DOI: 10.1063/1.1410333 |
0.485 |
|
| 2001 |
Letov V, Ershov M, Matsik SG, Perera AGU, Liu HC, Wasilewski ZR, Buchanan M. Transient photocurrent overshoot in quantum-well infrared photodetectors Applied Physics Letters. 79: 2094-2096. DOI: 10.1063/1.1400772 |
0.41 |
|
| 2001 |
Liu HC, Cheung IW, SpringThorpe AJ, Dharma-Wardana C, Wasilewski ZR, Lockwood DJ, Aers GC. Intersubband Raman laser Applied Physics Letters. 78: 3580-3582. DOI: 10.1063/1.1377857 |
0.366 |
|
| 2001 |
Perera AGU, Matsik SG, Yaldiz B, Liu HC, Shen A, Gao M, Wasilewski ZR, Buchanan M. Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm Applied Physics Letters. 78: 2241-2243. DOI: 10.1063/1.1361283 |
0.371 |
|
| 2001 |
Dupont E, Gao M, Wasilewski Z, Liu HC. Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation Applied Physics Letters. 78: 2067-2069. DOI: 10.1063/1.1359482 |
0.463 |
|
| 2001 |
Ciorga M, Sachrajda A, Hawrylak P, Gould C, Zawadzki P, Feng Y, Wasilewski Z. Readout of a single electron spin based quantum bit by current detection Physica E: Low-Dimensional Systems and Nanostructures. 11: 35-40. DOI: 10.1016/S1386-9477(01)00153-9 |
0.398 |
|
| 2001 |
Ershov M, Yaldiz B, Perera AGU, Matsik SG, Liu HC, Buchanan M, Wasilewski ZR, Williams MD. Space charge spectroscopy of integrated quantum well infrared photodetector–light emitting diode Infrared Physics & Technology. 42: 259-265. DOI: 10.1016/S1350-4495(01)00084-6 |
0.413 |
|
| 2001 |
Letov V, Perera AGU, Ershov M, Liu HC, Buchanan M, Wasilewski ZR. Experimental observation of transient photocurrent overshoot in quantum well infrared photodetectors Infrared Physics & Technology. 42: 243-247. DOI: 10.1016/S1350-4495(01)00082-2 |
0.389 |
|
| 2001 |
Liu HC, Song CY, Shen A, Gao M, Dupont E, Poole PJ, Wasilewski ZR, Buchanan M, Wilson PH, Robinson BJ, Thompson DA, Ohno Y, Ohno H. Dual-band photodetectors based on interband and intersubband transitions Infrared Physics & Technology. 42: 163-170. DOI: 10.1016/S1350-4495(01)00072-X |
0.479 |
|
| 2001 |
Hinzer K, Bayer M, McCaffrey JP, Hawrylak P, Korkusinski M, Stern O, Wasilewski ZR, Fafard S, Forchel A. Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dots Physica Status Solidi (B) Basic Research. 224: 385-392. DOI: 10.1002/1521-3951(200103)224:2<385::Aid-Pssb385>3.0.Co;2-B |
0.446 |
|
| 2000 |
Hinzer K, Allen CN, Lapointe J, Picard D, Wasilewski ZR, Fafard S, SpringThorpe AJ. Widely tunable self-assembled quantum dot lasers Journal of Vacuum Science and Technology. 18: 578-581. DOI: 10.1116/1.582229 |
0.48 |
|
| 2000 |
Ciorga M, Sachrajda AS, Hawrylak P, Gould C, Zawadzki P, Jullian S, Feng Y, Wasilewski Z. Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy Physical Review B. 61. DOI: 10.1103/Physrevb.61.R16315 |
0.364 |
|
| 2000 |
Dupont E, Gao M, Liu HC, Wasilewski ZR, Shen A, Załużny M, Schmidt SR, Seilmeier A. Grazing-angle intersubband absorption in n-doped GaAs multiple quantum wells Physical Review B. 61: 13050-13054. DOI: 10.1103/Physrevb.61.13050 |
0.452 |
|
| 2000 |
Kolev P, Deen MJ, Liu HC, Li JM, Buchanan M, Wasilewski ZR. Asymmetry in the dark current low frequency noise characteristics of B–B and B–C quantum well infrared photodetectors from 10 to 80 K Journal of Applied Physics. 87: 2400-2407. DOI: 10.1063/1.372192 |
0.401 |
|
| 2000 |
Bouchard J, Têtu M, Janz S, Xu D-, Wasilewski ZR, Piva P, Akano UG, Mitchell IV. Quasi-phase matched second-harmonic generation in an AlxGa1−xAs asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing Applied Physics Letters. 77: 4247-4249. DOI: 10.1063/1.1335545 |
0.455 |
|
| 2000 |
Liu HC, Song CY, Shen A, Gao M, Wasilewski ZR, Buchanan M. GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection Applied Physics Letters. 77: 2437-2439. DOI: 10.1063/1.1318232 |
0.477 |
|
| 2000 |
McCaffrey JP, Robertson MD, Fafard S, Wasilewski ZR, Griswold EM, Madsen LD. Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy Journal of Applied Physics. 88: 2272-2277. DOI: 10.1063/1.1287226 |
0.435 |
|
| 2000 |
Piva PG, Goldberg RD, Mitchell IV, Labrie D, Leon R, Charbonneau S, Wasilewski ZR, Fafard S. Enhanced degradation resistance of quantum dot lasers to radiation damage Applied Physics Letters. 77: 624-626. DOI: 10.1063/1.127065 |
0.467 |
|
| 2000 |
Fafard S, Spanner M, McCaffrey JP, Wasilewski ZR. Coupled InAs/GaAs quantum dots with well-defined electronic shells Applied Physics Letters. 76: 2268-2270. DOI: 10.1063/1.126317 |
0.459 |
|
| 2000 |
Perera AGU, Matsik SG, Ershov M, Yi YW, Liu HC, Buchanan M, Wasilewski ZR. Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors Physica E-Low-Dimensional Systems & Nanostructures. 7: 130-134. DOI: 10.1016/S1386-9477(99)00302-1 |
0.405 |
|
| 2000 |
Urdanivia J, Iikawa F, Brum J, Maialle M, Hawrylak P, Wasilewski Z. Screening effects on the spin splitting in n-doped GaAs/AlGaAs quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 6: 813-816. DOI: 10.1016/S1386-9477(99)00239-8 |
0.426 |
|
| 2000 |
Zozoulenko I, Sachrajda AS, Gould C, Berggren K, Zawadzki P, Feng Y, Wasilewski Z. Magnetoconductance of a few-electron open quantum dot Physica E-Low-Dimensional Systems & Nanostructures. 6: 409-413. DOI: 10.1016/S1386-9477(99)00205-2 |
0.455 |
|
| 2000 |
Charlebois S, Beerens J, Côté R, Lavallée E, Beauvais J, Wasilewski ZR. Temperature dependence of the resistance resonance in weakly coupled quantum wells Physica E-Low-Dimensional Systems & Nanostructures. 6: 645-649. DOI: 10.1016/S1386-9477(99)00140-X |
0.414 |
|
| 2000 |
Rigal LB, Maude DK, Potemski M, Portal JC, Eaves L, Wasilewski ZR, Hill G, Pate MA, Toropov AI. A phase diagram for the breakdown of the odd integer quantum Hall effect Physica E-Low-Dimensional Systems & Nanostructures. 6: 124-127. DOI: 10.1016/S1386-9477(99)00064-8 |
0.439 |
|
| 1999 |
Sachrajda A, Gould C, Hawrylak P, Feng Y, Zawadzki P, Wasilewski Z. Spin depolarization in quantum dots Brazilian Journal of Physics. 29. DOI: 10.1590/S0103-97331999000400006 |
0.39 |
|
| 1999 |
Szmulowicz F, Shen A, Liu HC, Brown GJ, Wasilewski ZR, Buchanan M. Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment Mrs Proceedings. 607: 187. DOI: 10.1557/Proc-607-187 |
0.423 |
|
| 1999 |
Sachrajda AS, Gould C, Hawrylak P, Feng Y, Wasilewski Z. A Lateral Few Electron Dot Physica Scripta. 79: 16-19. DOI: 10.1238/Physica.Topical.079A00016 |
0.47 |
|
| 1999 |
Zozoulenko IV, Sachrajda AS, Gould C, Berggren K-, Zawadzki P, Feng Y, Wasilewski Z. Few-Electron Open Dots: Single Level Transport Physical Review Letters. 83: 1838-1841. DOI: 10.1103/Physrevlett.83.1838 |
0.369 |
|
| 1999 |
Rigal LB, Maude DK, Potemski M, Portal JC, Eaves L, Wasilewski ZR, Hill G, Pate MA. Phase Diagram For The Breakdown Of The Quantum Hall Effect Physical Review Letters. 82: 1249-1252. DOI: 10.1103/Physrevlett.82.1249 |
0.418 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Picard D, Spanner M, McCaffrey JP, Piva PG. Manipulating the energy levels of semiconductor quantum dots Physical Review B. 59: 15368-15373. DOI: 10.1103/Physrevb.59.15368 |
0.471 |
|
| 1999 |
Liu HC, Szmulowicz F, Wasilewski ZR, Buchanan M, Brown GJ. Intersubband infrared detector with optimized valence band quantum wells for 3–5 μm wavelength region Journal of Applied Physics. 85: 2972-2976. DOI: 10.1063/1.369062 |
0.462 |
|
| 1999 |
Fafard S, Wasilewski ZR, Spanner M. Evolution of the energy levels in quantum dot ensembles with different densities Applied Physics Letters. 75: 1866-1868. DOI: 10.1063/1.124854 |
0.484 |
|
| 1999 |
Dupont E, Liu HC, Buchanan M, Wasilewski ZR, St-Germain D, Chevrette P. Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode Applied Physics Letters. 75: 563-565. DOI: 10.1063/1.124442 |
0.391 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Hinzer K, McCaffrey JP, Feng Y. Lasing in quantum-dot ensembles with sharp adjustable electronic shells Applied Physics Letters. 75: 986-988. DOI: 10.1063/1.124253 |
0.477 |
|
| 1999 |
Rampton VW, Kennedy I, Mellor CJ, Bracher B, Henini M, Wasilewski ZR, Coleridge PT. Surface acoustic wave interactions with composite fermions and the acousto-electric effect Physica B: Condensed Matter. 263: 205-207. DOI: 10.1016/S0921-4526(98)01337-4 |
0.323 |
|
| 1999 |
Wasilewski ZR, Fafard S, McCaffrey JP. Size and shape engineering of vertically stacked self-assembled quantum dots Journal of Crystal Growth. 201202: 1131-1135. DOI: 10.1016/S0022-0248(98)01539-5 |
0.467 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Picard D, Piva PG, McCaffrey JP. Self-Assembled Quantum Dots : Five Years Later Superlattices and Microstructures. 25: 87-96. DOI: 10.1006/Spmi.1998.0619 |
0.483 |
|
| 1998 |
Dudziak E, Bozym J, Pruchnik D, Wasilewski ZR. Large Filling-Factor-Dependent Spin Splitting in Magnetooptic Kerr Effect in GaAs/AlGaAs Multiple Quantum Wells Acta Physica Polonica A. 94: 291-296. DOI: 10.12693/Aphyspola.94.291 |
0.456 |
|
| 1998 |
Liu HC, Li L, Allard LB, Buchanan M, Wasilewski ZR, Brown GJ, Szmulowicz F, Hegde SM. P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices Proceedings of Spie - the International Society For Optical Engineering. 3287: 167-172. DOI: 10.1117/12.304478 |
0.368 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Electrical transport and far-infrared transmission in a quantum wire array Journal of Vacuum Science & Technology B. 16: 2915-2927. DOI: 10.1116/1.590368 |
0.367 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Far-infrared transmission study of Bernstein modes in a two-dimensional electron gas with a tunable lateral modulation Journal of Vacuum Science and Technology. 16: 821-824. DOI: 10.1116/1.581065 |
0.324 |
|
| 1998 |
McKinnon WR, Driad R, McAlister SP, Renaud A, Wasilewski ZR. Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors Journal of Vacuum Science and Technology. 16: 846-849. DOI: 10.1116/1.581020 |
0.327 |
|
| 1998 |
Ershov M, Liu HC, Li L, Buchanan M, Wasilewski ZR, Jonscher AK. Negative capacitance effect in semiconductor devices Ieee Transactions On Electron Devices. 45: 2196-2206. DOI: 10.1109/16.725254 |
0.353 |
|
| 1998 |
Sachrajda AS, Ketzmerick R, Gould C, Feng Y, Kelly PJ, Delage A, Wasilewski Z. Fractal Conductance Fluctuations In A Soft-Wall Stadium And A Sinai Billiard Physical Review Letters. 80: 1948-1951. DOI: 10.1103/Physrevlett.80.1948 |
0.372 |
|
| 1998 |
Zozoulenko IV, Sachrajda AS, Zawadzki P, Berggren K-, Feng Y, Wasilewski Z. Conductance fluctuations in a rectangular dot at constant magnetic fields Physical Review B. 58: 10597-10601. DOI: 10.1103/Physrevb.58.10597 |
0.343 |
|
| 1998 |
Zozoulenko IV, Sachrajda AS, Zawadzki P, Berggren K-, Feng Y, Wasilewski Z. The roles of leads and periodic orbits in the conductance fluctuations of high-mobility quantum dots Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/004 |
0.48 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Bernstein modes in a laterally modulated two-dimensional electron gas Semiconductor Science and Technology. 13: 169-173. DOI: 10.1088/0268-1242/13/2/002 |
0.336 |
|
| 1998 |
Keeler WJ, Keeler GA, Harrison DA, Wasilewski ZR. Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations Journal of Applied Physics. 83: 2266-2271. DOI: 10.1063/1.366967 |
0.358 |
|
| 1998 |
Perera AGU, Silvestrov VG, Matsik SG, Liu HC, Buchanan M, Wasilewski ZR, Ershov M. Nonuniform vertical charge transport and relaxation in quantum well infrared detectors Journal of Applied Physics. 83: 991-997. DOI: 10.1063/1.366787 |
0.362 |
|
| 1998 |
Liu HC, Li L, Buchanan M, Wasilewski ZR, Brown GJ, Szmulowicz F, Hegde SM. A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights Journal of Applied Physics. 83: 585-587. DOI: 10.1063/1.366644 |
0.45 |
|
| 1998 |
Janz S, Buchanan M, Meer vdP, Wasilewski Z, Xu D, Piva P, Mitchell I, Akano U, Fiore AA. Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing Applied Physics Letters. 72: 3097-3099. DOI: 10.1063/1.121558 |
0.371 |
|
| 1998 |
Liu HC, Buchanan M, Wasilewski ZR. How good is the polarization selection rule for intersubband transitions Applied Physics Letters. 72: 1682-1684. DOI: 10.1063/1.121151 |
0.405 |
|
| 1998 |
Gould C, Hawrylak P, Sachrajda AS, Feng Y, Wasilewski Z. Transport spectroscopy of lateral few electron quantum dots in a magnetic field Physica B-Condensed Matter. 256: 141-146. DOI: 10.1016/S0921-4526(98)00672-3 |
0.432 |
|
| 1998 |
Kennedy I, Rampton VW, Mellor CJ, Bracher BH, Henini M, Wasilewski ZR, Coleridge PT. Composite fermion signature in the acoustoelectric effect in 2DES and 2DHS Physica B-Condensed Matter. 249: 36-39. DOI: 10.1016/S0921-4526(98)00062-3 |
0.407 |
|
| 1997 |
Taylor RP, Newbury R, Sachrajda AS, Feng Y, Coleridge PT, Dettmann C, Zhu N, Guo H, Delage A, Kelly PJ, Wasilewski Z. Self-Similar Magnetoresistance Of A Semiconductor Sinai Billiard Physical Review Letters. 78: 1952-1955. DOI: 10.1103/Physrevlett.78.1952 |
0.357 |
|
| 1997 |
Brown SA, Young JF, Wasilewski Z, Coleridge PT. Fermi-edge singularities in photoluminescence from modulation-doped GaAs quantum wells Physical Review B. 56: 3937-3940. DOI: 10.1103/Physrevb.56.3937 |
0.423 |
|
| 1997 |
McCaffrey JP, Wasilewski ZR, Robertson MD, Corbett JM. Measurement of indium segregation in strained InxGa1 - xAs/GaAs quantum wells by transmission electron microscopy Philosophical Magazine. 75: 803-821. DOI: 10.1080/01418619708207203 |
0.451 |
|
| 1997 |
Liu HC, Li L, Buchanan M, Wasilewski ZR. Effect of the shape of the first barrier on quantum well infrared photodetector performance Journal of Applied Physics. 82: 889-892. DOI: 10.1063/1.365857 |
0.465 |
|
| 1997 |
Przadka A, Webb KJ, Janes DB, Liu HC, Wasilewski ZR. Microwave measurement of shot noise in resonant tunneling diodes Applied Physics Letters. 71: 530-532. DOI: 10.1063/1.119599 |
0.353 |
|
| 1997 |
Allard LB, Liu HC, Buchanan M, Wasilewski ZR. Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode Applied Physics Letters. 70: 2784-2786. DOI: 10.1063/1.119058 |
0.416 |
|
| 1997 |
Fiore AA, Beaulieu Y, Janz S, McCaffrey J, Wasilewski Z, Xu D. Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide Applied Physics Letters. 70: 2655-2657. DOI: 10.1063/1.118987 |
0.477 |
|
| 1997 |
Ershov M, Liu HC, Li L, Buchanan M, Wasilewski ZR, Ryzhii V. Unusual capacitance behavior of quantum well infrared photodetectors Applied Physics Letters. 70: 1828-1830. DOI: 10.1063/1.118704 |
0.378 |
|
| 1997 |
Ershov M, Liu HC, Buchanan M, Wasilewski ZR, Ryzhii V. Photoconductivity Nonlinearity At High Excitation Power In Quantum Well Infrared Photodetectors Applied Physics Letters. 70: 414-416. DOI: 10.1063/1.118320 |
0.371 |
|
| 1997 |
Liu HC, Allard LB, Buchanan M, Wasilewski ZR. Pixelless infrared imaging device Electronics Letters. 33: 379-380. DOI: 10.1049/El:19970242 |
0.353 |
|
| 1997 |
Wasilewski ZR, Rolfe SJ, Wilson RA. Contamination in molecular beam epitaxy : the role of arsenic drag effect Journal of Crystal Growth. 1270-1277. DOI: 10.1016/S0022-0248(96)01229-8 |
0.305 |
|
| 1996 |
Dudziak E, Bożym J, Pruchnik D, Wasilewski ZR. Faraday Rotation in Multiple Quantum Wells of GaAs/AlGaAs Acta Physica Polonica A. 90: 1022-1026. DOI: 10.12693/Aphyspola.90.1022 |
0.475 |
|
| 1996 |
Kolev PV, Deen MJ, Liu HC, Li J, Buchanan M, Wasilewski ZR. Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors Canadian Journal of Physics. 74: 9-15. DOI: 10.1139/P96-822 |
0.489 |
|
| 1996 |
Dion M, Wasilewski ZR, Chatenoud F, Gupta VK, Pratt AR, Williams RL, Norman CE, Fahy MR, Marinopoulou A. Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2 Canadian Journal of Physics. 74: 1-4. DOI: 10.1139/P96-820 |
0.432 |
|
| 1996 |
Coleridge PT, Wasilewski Z, Zawadzki P. Growth and characterization of high mobility two‐dimensional electron gases Journal of Vacuum Science & Technology B. 14: 2290-2292. DOI: 10.1116/1.588922 |
0.338 |
|
| 1996 |
Liu HC, Li J, Buchanan M, Wasilewski ZR. High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique Ieee Journal of Quantum Electronics. 32: 1024-1028. DOI: 10.1109/3.502380 |
0.412 |
|
| 1996 |
Lenchyshyn LC, Liu HC, Buchanan M, Wasilewski ZR. Voltage‐tuning in multi‐color quantum well infrared photodetector stacks Journal of Applied Physics. 79: 8091-8097. DOI: 10.1063/1.362365 |
0.434 |
|
| 1996 |
Lenchyshyn LC, Liu HC, Buchanan M, Wasilewski ZR. An asymmetric quantum well infrared photodetector with voltage‐tunable narrow and broad‐band response Journal of Applied Physics. 79: 3307-3311. DOI: 10.1063/1.361230 |
0.49 |
|
| 1996 |
Fafard S, Wasilewski Z, McCaffrey J, Raymond S, Charbonneau S. InAs self-assembled quantum dots on InP by molecular beam epitaxy Applied Physics Letters. 68: 991-993. DOI: 10.1063/1.116122 |
0.461 |
|
| 1996 |
Fallahi M, Peyghambarian N, Kasunic K, Dion M, Wasilewski Z. Circular-grating surface-emitting DBR laser array for free-space applications Electronics Letters. 32: 1583. DOI: 10.1049/El:19961026 |
0.318 |
|
| 1996 |
Brum JA, Brown S, Hawrylak P, Young JF, Wasilewski Z. Mobile excitons and Fermi edge singularities in an interacting 2D electron gas Surface Science. 361: 424-427. DOI: 10.1016/0039-6028(96)00436-0 |
0.304 |
|
| 1996 |
Taylor RP, Newbury R, Sachrajda AS, Feng Y, Coleridge PT, Delage A, Kelly PJ, Wasilewski Z, Zawadzki P, Zhu N, Guo H. Geometry induced quantum interference: a continuous evolution from square to Sinai billiard Superlattices and Microstructures. 20: 297-305. DOI: 10.1006/Spmi.1996.0081 |
0.444 |
|
| 1995 |
Liu HC, Li J, Aers GC, Leavens CR, Buchanan M, Wasilewski ZR. Shot-noise suppression in resonant tunneling. Physical Review B. 51: 5116-5120. PMID 9979388 DOI: 10.1103/Physrevb.51.5116 |
0.348 |
|
| 1995 |
Lenchyshyn LC, Liu HC, Buchanan M, Wasilewski ZR. Mid-wavelength infrared detection with InxGa1-xAs/Al0.45Ga0.55As multiple quantum well structures Semiconductor Science and Technology. 10: 45-48. DOI: 10.1088/0268-1242/10/1/007 |
0.416 |
|
| 1995 |
Fallahi M, Buchanan M, Wasilewski Z, Barber R, Stapledon J, Nournia M, Dion M. Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer Electronics Letters. 31: 1581-1582. DOI: 10.1049/El:19951045 |
0.409 |
|
| 1995 |
Liu HC, Li J, Wasilewski ZR, Buchanan M. Integrated quantum well intersub-band photodetector and light emitting diode Electronics Letters. 31: 832-833. DOI: 10.1049/El:19950522 |
0.428 |
|
| 1994 |
Wasilewski ZR, Liu HC, Buchanan M. Studies of Si segregation in GaAs using current–voltage characteristics of quantum well infrared photodetectors Journal of Vacuum Science & Technology B. 12: 1273-1276. DOI: 10.1116/1.587020 |
0.442 |
|
| 1994 |
Poole PJ, Piva PG, Buchanan M, Aers GC, Roth AP, Dion M, Wasilewski ZR, Koteles ES, Charbonneau S, Beauvais J. Enhancement of quantum well intermixing through repeated ion implantation Semiconductor Science and Technology. 9: 2134-2137. DOI: 10.1088/0268-1242/9/11/017 |
0.327 |
|
| 1994 |
Chen W, Maris HJ, Wasilewski ZR, Tamura SI. Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 to 300 K Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 70: 687-698. DOI: 10.1080/01418639408240242 |
0.336 |
|
| 1994 |
Xing B, Liu HC, Wilson PH, Buchanan M, Wasilewski ZR, Simmons JG. Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors Journal of Applied Physics. 76: 1889-1894. DOI: 10.1063/1.357713 |
0.359 |
|
| 1994 |
Steele AG, Buchanan M, Liu HC, Wasilewski ZR. Postgrowth tuning of quantum‐well infrared detectors by rapid thermal annealing Journal of Applied Physics. 75: 8234-8236. DOI: 10.1063/1.356532 |
0.332 |
|
| 1994 |
Li J, Liu HC, Buchanan M, Wasilewski ZR, Simmons JG. Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple-double-well Journal of Applied Physics. 75: 1748-1753. DOI: 10.1063/1.356365 |
0.313 |
|
| 1994 |
Dupont E, Corkum P, Liu HC, Wilson PH, Buchanan M, Wasilewski ZR. Two‐photon intersubband transitions in quantum well infrared photoconductors Applied Physics Letters. 65: 1560-1562. DOI: 10.1063/1.113004 |
0.424 |
|
| 1994 |
Liu HC, Wilson PH, Lamm M, Steele AG, Wasilewski ZR, Li J, Buchanan M, Simmons JG. Low dark current dual band infrared photodetector using thin AlAs barriers and Γ-X mixed intersubband transition in GaAs quantum wells Applied Physics Letters. 64: 475-477. DOI: 10.1063/1.111134 |
0.459 |
|
| 1994 |
Piva PG, Poole PJ, Charbonneau S, Koteles ES, Buchanan M, Aers G, Roth AP, Wasilewski ZR, Beauvais J, Goldberg RD. Bandgap tuning of semiconductor quantum well structures using ion implantation Superlattices and Microstructures. 15: 385-389. DOI: 10.1006/Spmi.1994.1075 |
0.325 |
|
| 1993 |
Liu HC, Li J, Buchanan M, Wasilewski ZR, Simmons JG. Regular periodic intersubband photocurrent peaks in a multiple double-well structure. Physical Review. B, Condensed Matter. 48: 1951-1954. PMID 10008570 DOI: 10.1103/Physrevb.48.1951 |
0.36 |
|
| 1993 |
Liu H, Li J, Thompson J, Wasilewski Z, Buchanan M, Simmons J. Multicolor voltage-tunable quantum-well infrared photodetector Ieee Electron Device Letters. 14: 566-568. DOI: 10.1109/55.260791 |
0.399 |
|
| 1993 |
Wilson PH, Lamm M, Lit J, Buchanan M, Wasilewski ZR, Simmons JG, Schaff WJ. Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems Semiconductor Science and Technology. 8: 2010-2014. DOI: 10.1088/0268-1242/8/11/012 |
0.429 |
|
| 1993 |
Liu HC, Steele AG, Buchanan M, Wasilewski ZR. Dark current in quantum well infrared photodetectors Journal of Applied Physics. 73: 2029-2031. DOI: 10.1063/1.353146 |
0.424 |
|
| 1993 |
Liu HC, Wasilewski ZR, Buchanan M, Chu H. Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors Applied Physics Letters. 63: 761-763. DOI: 10.1063/1.109900 |
0.439 |
|
| 1992 |
Aers GC, Wasilewski ZR. Improved growth uniformity in molecular‐beam epitaxy: Alternative strategies Journal of Vacuum Science & Technology B. 10: 815-818. DOI: 10.1116/1.586123 |
0.322 |
|
| 1992 |
Steele AG, Liu HC, Buchanan M, Wasilewski ZR. Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors Journal of Applied Physics. 72: 1062-1064. DOI: 10.1063/1.351833 |
0.452 |
|
| 1992 |
Landheer D, Aers GC, Wasilewski ZR. Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes Superlattices and Microstructures. 11: 55-59. DOI: 10.1016/0749-6036(92)90361-8 |
0.346 |
|
| 1992 |
Liu HC, Steele AG, Buchanan M, Wasilewski ZR. Infrared transmission and photocurrent spectroscopic study of a coupled asymmetrical quantum well structure Surface Science. 267: 514-517. DOI: 10.1016/0039-6028(92)91189-I |
0.48 |
|
| 1992 |
Roth AP, Morris D, Sun Q, Lacelle C, Wasilewski Z, Maigné P, Bensaoula A. Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE Journal of Crystal Growth. 120: 212-217. DOI: 10.1016/0022-0248(92)90393-W |
0.337 |
|
| 1991 |
Dubowski JJ, Thompson JR, Benzaquen R, Roth AP, Wasilewski Z. Epitaxy of Cd0.90Mn0.10Te for optoelectronic devices Canadian Journal of Physics. 69: 270-273. DOI: 10.1139/P91-045 |
0.335 |
|
| 1991 |
Wasilewski ZR, Aers GC, SpringThorpe AJ, Miner CJ. Studies and modeling of growth uniformity in molecular beam epitaxy Journal of Vacuum Science & Technology B. 9: 120-131. DOI: 10.1116/1.585273 |
0.323 |
|
| 1991 |
SpringThorpe AJ, Majeed A, Miner CJ, Wasilewski ZR, Aers GC. Improved thickness uniformity in molecular beam epitaxial growth of GaAs using a tilted conical insert crucible Journal of Vacuum Science and Technology. 9: 3175-3177. DOI: 10.1116/1.577141 |
0.318 |
|
| 1991 |
Liu HC, Buchanan M, Aers GC, Wasilewski ZR. Single quantum well intersubband infrared detector using GaAs-AlGaAs asymmetrical double-barrier structures Semiconductor Science and Technology. 6. DOI: 10.1088/0268-1242/6/12C/025 |
0.494 |
|
| 1991 |
Liu HC, Steele AG, Buchanan M, Wasilewski ZR. Infrared transmission and photocurrent study of intersubband transitions in a coupled asymmetrical quantum well structure Journal of Applied Physics. 70: 7560-7563. DOI: 10.1063/1.349710 |
0.457 |
|
| 1991 |
Liu HC, Aers GC, Buchanan M, Wasilewski ZR, Landheer D. Intersubband photocurrent from the quantum well of an asymmetrical double‐barrier structure Journal of Applied Physics. 70: 935-940. DOI: 10.1063/1.349602 |
0.501 |
|
| 1991 |
Steele AG, Liu HC, Buchanan M, Wasilewski ZR. Importance of the upper state position in the performance of quantum well intersubband infrared detectors Applied Physics Letters. 59: 3625-3627. DOI: 10.1063/1.106379 |
0.402 |
|
| 1991 |
Dubowski JJ, Roth AP, Wasilewski ZR, Rolfe SJ. CdTe-Cd1-xMnxTe multiple quantum well structures grown by pulsed laser evaporation and epitaxy Applied Physics Letters. 59: 1591-1593. DOI: 10.1063/1.106265 |
0.4 |
|
| 1991 |
Williams RL, Coleridge P, Wasilewski ZR, Dion M, Sachrajda A, Rolfe S. Silicon atomic plane doping in MBE grown InAs/GaAs Solid State Communications. 78: 493-497. DOI: 10.1016/0038-1098(91)90363-Z |
0.38 |
|
| 1991 |
Buckthought A, Boulet R, Sachrajda A, Wasilewski Z, Zawadzki P, Guillon F. Activation measurements of the fractional quantum hall effect in a tilted magnetic field as a function of electron density Solid State Communications. 78: 191-194. DOI: 10.1016/0038-1098(91)90281-Y |
0.334 |
|
| 1991 |
Wasilewski ZR, Aers GC, SpringThorpe AJ, Miner CJ. Growth uniformity studies in molecular beam epitaxy Journal of Crystal Growth. 111: 70-74. DOI: 10.1016/0022-0248(91)90949-6 |
0.325 |
|
| 1991 |
Roth AP, Wasilewski Z, Sun Q, Lacelle C, Bryskiewicz T, Coulas D, Noad JP. Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates Journal of Crystal Growth. 113: 379-384. DOI: 10.1016/0022-0248(91)90070-L |
0.317 |
|
| 1990 |
Liu HC, Buchanan M, Wasilewski ZR. Experimental study of intersubband infrared transitions in coupled quantum wells under an electric field Journal of Applied Physics. 68: 3780-3782. DOI: 10.1063/1.346304 |
0.442 |
|
| 1990 |
Buchanan M, Liu HC, Powell TG, Wasilewski ZR. Magneto‐resonant tunneling from a lightly doped contact region interacting with quasi‐two‐dimensional states in an accumulation layer Journal of Applied Physics. 68: 4313-4315. DOI: 10.1063/1.346227 |
0.344 |
|
| 1990 |
Janega PL, Chatenoud F, Wasilewski Z. Very low resistivity ohmic contact to p-type GaAs using InxGa1-xAs interlayer Electronics Letters. 26: 1395-1397. DOI: 10.1049/El:19900897 |
0.324 |
|
| 1990 |
Sachrajda A, Boulet R, Wasilewski Z, Coleridge P, Guillon F. Activation measurements of the fractional quantum hall effect as a function of magnetic field Solid State Communications. 74: 1021-1025. DOI: 10.1016/0038-1098(90)90478-T |
0.411 |
|
| 1989 |
Holmes S, Phillips CC, Stradling RA, Wasilewski Z, Droopad R, Parker SD, Yuen WT, Balk P, Brauers A, Heinecke H, Plass C, Weyers M, Foxon CT, Joyce BA, Smith GW, et al. Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopy Semiconductor Science and Technology. 4: 782-790. DOI: 10.1088/0268-1242/4/9/012 |
0.318 |
|
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