Ashish Baraskar, Ph.D.
Affiliations: | 2011 | Electrical amp; Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Ashish Baraskar"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2011 | UC Santa Barbara | |
| (Development of Ultra-Low Resistance Ohmic Contacts for indium gallium arsenide/indium phosphide HBTs.) | ||||
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Publications
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| Wistey MA, Baraskar AK, Singisetti U, et al. (2015) Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33 |
| Zhang Z, Koswatta SO, Bedell SW, et al. (2013) Ultra low contact resistivities for CMOS beyond 10-nm node Ieee Electron Device Letters. 34: 723-725 |
| Baraskar A, Gossard AC, Rodwell MJW. (2013) Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114 |
| Maassen J, Jeong C, Baraskar A, et al. (2013) Full band calculations of the intrinsic lower limit of contact resistivity Applied Physics Letters. 102 |
| Lobisser E, Rode JC, Jain V, et al. (2013) InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 769-772 |
| Hashemi P, Kobayashi M, Majumdar A, et al. (2013) High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions Ieee Symposium On Vlsi Circuits, Digest of Technical Papers. T18-T19 |
| Jain V, Lobisser E, Baraskar A, et al. (2011) InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26 |
| Jain V, Rode JC, Chiang HW, et al. (2011) 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Device Research Conference - Conference Digest, Drc. 271-272 |
| Jain V, Lobisser E, Baraskar A, et al. (2011) InGaAs/InP DHBTs demonstrating simultaneous f τ/f max ∼ 460/850 GHz in a refractory emitter process Conference Proceedings - International Conference On Indium Phosphide and Related Materials |
| Baraskar A, Wistey MA, Jain V, et al. (2010) Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9 |