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Ashish Baraskar, Ph.D. - Publications

Affiliations: 
2011 Electrical amp; Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497  0.683
2013 Zhang Z, Koswatta SO, Bedell SW, Baraskar A, Guillorn M, Engelmann SU, Zhu Y, Gonsalves J, Pyzyna A, Hopstaken M, Witt C, Yang L, Liu F, Newbury J, Song W, et al. Ultra low contact resistivities for CMOS beyond 10-nm node Ieee Electron Device Letters. 34: 723-725. DOI: 10.1109/Led.2013.2257664  0.523
2013 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114. DOI: 10.1063/1.4826205  0.451
2013 Maassen J, Jeong C, Baraskar A, Rodwell M, Lundstrom M. Full band calculations of the intrinsic lower limit of contact resistivity Applied Physics Letters. 102. DOI: 10.1063/1.4798238  0.616
2013 Lobisser E, Rode JC, Jain V, Chiang HW, Baraskar A, Mitchell WJ, Thibeault BJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu AWK. InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 769-772. DOI: 10.1002/Pssc.201200674  0.721
2013 Hashemi P, Kobayashi M, Majumdar A, Yang LA, Baraskar A, Balakrishnan K, Kim W, Chan K, Engelmann SU, Ott JA, Bedell SW, Murray CE, Liang S, Dennard RH, Sleight JW, et al. High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions Ieee Symposium On Vlsi Circuits, Digest of Technical Papers. T18-T19.  0.337
2011 Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Griffith Z, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26. DOI: 10.1109/Led.2010.2084069  0.751
2011 Jain V, Rode JC, Chiang HW, Baraskar A, Lobisser E, Thibeault BJ, Rodwell M, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Device Research Conference - Conference Digest, Drc. 271-272. DOI: 10.1109/DRC.2011.5994528  0.813
2011 Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell MJW, Urteaga M, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. InGaAs/InP DHBTs demonstrating simultaneous f τ/f max ∼ 460/850 GHz in a refractory emitter process Conference Proceedings - International Conference On Indium Phosphide and Related Materials.  0.814
2010 Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372  0.737
2010 Baraskar A, Jain V, Wistey MA, Singisetti U, Lee YJ, Thibeault B, Gossard A, Rodwell MJW. High doping effects on in-situ Ohmic contacts to n-InAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 481-484. DOI: 10.1109/ICIPRM.2010.5516269  0.682
2010 Rodwell MJW, Singisetti U, Wistey M, Burek GJ, Carter A, Baraskar A, Law J, Thibeault BJ, Kim EJ, Shin B, Lee YJ, Steiger S, Lee S, Ryu H, Tan Y, et al. III-V MOSFETs: Scaling laws, scaling limits, fabrication processes Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 25-30. DOI: 10.1109/ICIPRM.2010.5515914  0.599
2010 Jain V, Lobisser E, Baraskar A, Thibeault BJ, Rodwell M, Griffith Z, Urteaga M, Bartsch ST, Loubychev D, Snyder A, Wu Y, Fastenau JM, Liu WK. High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2010.5551887  0.8
2009 Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737  0.776
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304  0.69
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault B, Gossard AC, Stemmer S, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 120-123. DOI: 10.1109/ICIPRM.2009.5012456  0.701
2009 Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438  0.747
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault BJ, Stemmer S, Gossard AC, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. 37 mS/μm In0.53Ga0.47as MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2009.5354901  0.699
2009 Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/Pssc.200881532  0.69
2008 Rodwell M, Lobisser E, Wistey M, Jain V, Baraskar A, Lind E, Koo J, Griffith Z, Hacker J, Urteaga M, Mensa D, Pierson R, Brar B. THz bipolar transistor circuits: Technical feasibility, technology development, integrated circuit results 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.5  0.766
2005 Gurunathan K, Baraskar A, Marimuthu R, Amalnerkar DP. Co-precipitation synthesis in the presence of surfactant and characterization of nanosized CaRuO3 powders and its application in fired thick film resistors in nanoelectronics Materials Letters. 59: 2555-2562. DOI: 10.1016/J.Matlet.2005.03.045  0.339
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