| Year |
Citation |
Score |
| 2023 |
Huang F, Saini B, Yu Z, Yoo C, Thampy V, He X, Baniecki JD, Tsai W, Meng AC, McIntyre PC, Wong S. Enhanced Switching Reliability of HfZrO Ferroelectric Films Induced by Interface Engineering. Acs Applied Materials & Interfaces. PMID 37856882 DOI: 10.1021/acsami.3c08895 |
0.314 |
|
| 2022 |
Yu Z, Saini B, Liu Y, Huang F, Mehta A, Baniecki JD, Wong HP, Tsai W, McIntyre PC. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys. Acs Applied Materials & Interfaces. PMID 36384298 DOI: 10.1021/acsami.2c15047 |
0.34 |
|
| 2021 |
Meng AC, Wang Y, Braun MR, Lentz JZ, Peng S, Cheng H, Marshall AF, Cai W, McIntyre PC. Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires. Nanoscale. PMID 34652350 DOI: 10.1039/d1nr04220c |
0.595 |
|
| 2021 |
Babadi AS, Tang-Kong R, McIntyre PC. Link between Gas Phase Reaction Chemistry and the Electronic Conductivity of Atomic Layer Deposited Titanium Oxide Thin Films. The Journal of Physical Chemistry Letters. 12: 3625-3632. PMID 33825465 DOI: 10.1021/acs.jpclett.1c00115 |
0.345 |
|
| 2020 |
Braun MR, Guniat L, Fontcuberta I Morral A, McIntyre PC. In-Situ Reflectometry to Monitor Locally-Catalyzed Initiation and Growth of Nanowire Assemblies. Nanotechnology. PMID 32344388 DOI: 10.1088/1361-6528/Ab8Def |
0.37 |
|
| 2020 |
Fukumizu H, Sekine M, Hori M, McIntyre PC. Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS Japanese Journal of Applied Physics. 59: 016504. DOI: 10.7567/1347-4065/Ab6273 |
0.471 |
|
| 2020 |
McIntyre PC, Morral AFi. Semiconductor nanowires: to grow or not to grow? Materials Today Nano. 9: 100058. DOI: 10.1016/J.Mtnano.2019.100058 |
0.401 |
|
| 2020 |
Meng AC, Braun MR, Wang Y, Peng S, Tan W, Lentz JZ, Xue M, Pakzad A, Marshall AF, Harris JS, Cai W, McIntyre PC. Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission Materials Today. 40: 101-113. DOI: 10.1016/J.Mattod.2020.05.019 |
0.646 |
|
| 2020 |
Tan W, Bowring AR, Babadi AS, Meng AC, Tang‐Kong R, McGehee MD, McIntyre PC. Interfacing Low‐Temperature Atomic Layer Deposited TiO
2
Electron Transport Layers with Metal Electrodes Advanced Materials Interfaces. 7: 1902054. DOI: 10.1002/Admi.201902054 |
0.354 |
|
| 2019 |
Kavrik MS, Bostwick A, Rotenberg E, Tang K, Thomson E, Aoki T, Fruhberger B, Taur Y, McIntyre PC, Kummel AC. Understanding the Mechanism of Electronic Defects Suppression Enabled by Non-Idealities in Atomic Layer Deposition. Journal of the American Chemical Society. PMID 31779305 DOI: 10.1021/Jacs.9B06640 |
0.395 |
|
| 2019 |
Wang Y, Meng AC, McIntyre PC, Cai W. Phase-field investigation of the stages in radial growth of core-shell Ge/GeSn nanowires. Nanoscale. PMID 31709446 DOI: 10.1039/C9Nr07587A |
0.598 |
|
| 2019 |
Kavrik MS, Ercius P, Cheung J, Tang K, Wang Q, Fruhberger B, Kim MJ, Taur Y, McIntyre PC, Kummel AC. Engineering high-k/SiGe interface with ALD oxide for selective GeOx reduction. Acs Applied Materials & Interfaces. PMID 30938163 DOI: 10.1021/Acsami.8B22362 |
0.4 |
|
| 2019 |
Peng S, Meng AC, Braun MR, Marshall AF, McIntyre PC. Plasmons and inter-band transitions of hexagonal close packed gold nanoparticles Applied Physics Letters. 115: 51107. DOI: 10.1063/1.5100991 |
0.313 |
|
| 2019 |
Villena MA, Magyari-Köpe B, Nishi Y, McIntyre PC, Lanza M. Effect of IrO2 Spatial Distribution on the Stability and Charge Distribution of Ti1–xIrxO2 Alloys Chemistry of Materials. 31: 8742-8751. DOI: 10.1021/Acs.Chemmater.9B02507 |
0.309 |
|
| 2019 |
Marshall AF, Meng A, Braun M, Pakzad A, Cheng H, McIntyre PC. Strain and Sn distribution in Ge/Ge1−xSnx Core-Shell Nanowires Microscopy and Microanalysis. 25: 2146-2147. DOI: 10.1017/S1431927619011462 |
0.318 |
|
| 2019 |
Meng A, Braun M, Wang Y, Fenrich C, Xue M, Diercks D, Gorman B, Richard M, Marshall A, Cai W, Harris J, McIntyre P. Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters Materials Today Nano. 5: 100026. DOI: 10.1016/J.Mtnano.2019.01.001 |
0.609 |
|
| 2019 |
Breeden M, Wolf S, Ueda S, Fang Z, Chang C, Tang K, McIntyre P, Kummel AC. Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation Applied Surface Science. 478: 1065-1073. DOI: 10.1016/J.Apsusc.2019.01.216 |
0.434 |
|
| 2018 |
Tang-Kong R, Winter R, Brock R, Tracy J, Eizenberg M, Dauskardt RH, McIntyre PC. The Role of Catalyst Adhesion in ALD-TiO Protection of Water Splitting Silicon Anodes. Acs Applied Materials & Interfaces. PMID 30346686 DOI: 10.1021/Acsami.8B13576 |
0.336 |
|
| 2018 |
Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim MJ, Fruhberger B, Taur Y, McIntyre PC, Kummel AC. Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging. Acs Applied Materials & Interfaces. PMID 30073827 DOI: 10.1021/Acsami.8B06547 |
0.398 |
|
| 2018 |
Zhang L, Janotti A, Meng AC, Tang K, Van de Walle CG, McIntyre PC. Interfacial Cation Defect Charge Dipoles in Stacked TiO2-Al2O3 Gate Dielectrics. Acs Applied Materials & Interfaces. PMID 29369616 DOI: 10.1021/Acsami.7B19619 |
0.399 |
|
| 2018 |
Tang-Kong R, O'Rourke C, Mills A, McIntyre PC. Silicon Photoanodes for Solar-Driven Oxidation of Brine: A Nanoscale, Photo-Active Analog of the Dimensionally-Stable Anode Journal of the Electrochemical Society. 165: H1072-H1079. DOI: 10.1149/2.0791816Jes |
0.317 |
|
| 2018 |
Tang K, Droopad R, McIntyre PC. Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects Journal of Applied Physics. 123: 025708. DOI: 10.1063/1.4994393 |
0.372 |
|
| 2018 |
Hendricks OL, Tang-Kong R, Babadi AS, McIntyre PC, Chidsey CED. Atomic Layer Deposited TiO2–IrOx Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage Chemistry of Materials. 31: 90-100. DOI: 10.1021/Acs.Chemmater.8B03092 |
0.371 |
|
| 2018 |
Mikulik D, Meng AC, Berrazouane R, Stückelberger J, Romero-Gomez P, Tang K, Haug F, Fontcuberta i Morral A, McIntyre PC. Surface Defect Passivation of Silicon Micropillars Advanced Materials Interfaces. 5: 1800865. DOI: 10.1002/Admi.201800865 |
0.312 |
|
| 2018 |
Tan W, Hendricks OL, Meng AC, Braun MR, McGehee MD, Chidsey CED, McIntyre PC. Atomic Layer Deposited TiO2
-IrO
x
Alloy as a Hole Transport Material for Perovskite Solar Cells Advanced Materials Interfaces. 5: 1800191. DOI: 10.1002/Admi.201800191 |
0.346 |
|
| 2017 |
Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS. Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8. Acs Applied Materials & Interfaces. PMID 29124928 DOI: 10.1021/Acsami.7B12886 |
0.374 |
|
| 2017 |
Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal HJ, Palumbo FRM, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, et al. Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride. Acs Applied Materials & Interfaces. PMID 29039199 DOI: 10.1021/Acsami.7B10948 |
0.37 |
|
| 2017 |
Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics. Scientific Reports. 7: 9769. PMID 28852035 DOI: 10.1038/S41598-017-09888-6 |
0.307 |
|
| 2017 |
Meng AC, Tang K, Braun M, Zhang L, McIntyre PC. Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces. Nanotechnology. PMID 28776501 DOI: 10.1088/1361-6528/Aa842B |
0.37 |
|
| 2017 |
Tang K, Meng AC, Hui F, Shi Y, Petach T, Hitzman C, Koh AL, Goldhaber-Gordon D, Lanza M, McIntyre PC. Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts. Nano Letters. PMID 28604007 DOI: 10.1021/Acs.Nanolett.7B01460 |
0.35 |
|
| 2017 |
Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081 |
0.463 |
|
| 2017 |
Tang K, Palumbo FR, Zhang L, Droopad R, McIntyre PC. Interface defect hydrogen depassivation and capacitance-voltage hysteresis of Al2O3/InGaAs gate stacks. Acs Applied Materials & Interfaces. PMID 28152310 DOI: 10.1021/Acsami.6B16232 |
0.362 |
|
| 2017 |
Palumbo F, Winter R, Tang K, McIntyre PC, Eizenberg M. Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors Journal of Applied Physics. 121: 174105. DOI: 10.1063/1.4982912 |
0.352 |
|
| 2017 |
Wang Y, McIntyre PC, Cai W. Phase Field Model for Morphological Transition in Nanowire Vapor–Liquid–Solid Growth Crystal Growth & Design. 17: 2211-2217. DOI: 10.1021/Acs.Cgd.7B00197 |
0.586 |
|
| 2017 |
Marshall AF, Chan G, Meng AC, Braun M, McIntyre PC. Ge Nanowires: Sn Catalysts and Ge/Ge1-xSnx Core-Shell Structures Microscopy and Microanalysis. 23: 1730-1731. DOI: 10.1017/S143192761700931X |
0.339 |
|
| 2016 |
Meng AC, Fenrich CS, Braun MR, McVittie JP, Marshall AF, Harris JS, McIntyre PC. Core/Shell Germanium/Germanium-Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence. Nano Letters. PMID 27802056 DOI: 10.1021/Acs.Nanolett.6B03316 |
0.466 |
|
| 2016 |
Tang K, Meng AC, Droopad R, McIntyre PC. Temperature dependent border trap response produced by a defective interfacial oxide layer in Al2O3/InGaAs gate stacks. Acs Applied Materials & Interfaces. PMID 27758108 DOI: 10.1021/Acsami.6B10402 |
0.414 |
|
| 2016 |
Hendricks OL, Scheuermann AG, Schmidt M, Hurley PK, McIntyre PC, Chidsey CE. Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes. Acs Applied Materials & Interfaces. PMID 27548719 DOI: 10.1021/Acsami.6B08558 |
0.443 |
|
| 2016 |
Negara MA, Kitano M, Long R, McIntyre PC. Fixed Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices. Acs Applied Materials & Interfaces. PMID 27459343 DOI: 10.1021/Acsami.6B03862 |
0.398 |
|
| 2016 |
Scheuermann AG, McIntyre PC. Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells. The Journal of Physical Chemistry Letters. PMID 27359352 DOI: 10.1021/Acs.Jpclett.6B00631 |
0.365 |
|
| 2016 |
Zhang L, Guo Y, Hassan VV, Tang K, Foad MA, Woicik JC, Pianetta PA, Robertson J, McIntyre PC. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. Acs Applied Materials & Interfaces. PMID 27345195 DOI: 10.1021/Acsami.6B03331 |
0.453 |
|
| 2016 |
Winter R, Shekhter P, Tang K, Floreano L, Verdini A, McIntyre PC, Eizenberg M. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface. Acs Applied Materials & Interfaces. PMID 27282201 DOI: 10.1021/Acsami.6B02957 |
0.413 |
|
| 2016 |
Scheuermann AG, Lawrence JP, Meng AC, Tang K, Hendricks OL, Chidsey CE, McIntyre PC. Titanium oxide crystallization and interface defect passivation for high performance insulator-protected Schottky junction MIS photoanodes. Acs Applied Materials & Interfaces. PMID 27196628 DOI: 10.1021/Acsami.6B03688 |
0.447 |
|
| 2016 |
Satterthwaite PF, Scheuermann AG, Hurley PK, Chidsey CE, McIntyre PC. Engineering Interfacial Silicon Dioxide for Improved MIS Silicon Photoanode Water Splitting Performance. Acs Applied Materials & Interfaces. PMID 27096845 DOI: 10.1021/Acsami.6B03029 |
0.459 |
|
| 2016 |
Li Y, Wang Y, Ryu S, Marshall AF, Cai W, McIntyre PC. SPONTANEOUS, DEFECT-FREE KINKING VIA CAPILLARY INSTABILITY DURING VAPOR-LIQUID-SOLID NANOWIRE GROWTH. Nano Letters. PMID 26837774 DOI: 10.1021/Acs.Nanolett.5B04633 |
0.606 |
|
| 2016 |
Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. Nano Letters. 16: 637-43. PMID 26686394 DOI: 10.1021/Acs.Nanolett.5B04367 |
0.36 |
|
| 2016 |
Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460 |
0.414 |
|
| 2016 |
Scheuermann AG, Kemp KW, Tang K, Lu DQ, Satterthwaite PF, Ito T, Chidsey CED, McIntyre PC. Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes Energy and Environmental Science. 9: 504-516. DOI: 10.1039/C5Ee02484F |
0.421 |
|
| 2016 |
Sardashti K, Hu KT, Tang K, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces Applied Surface Science. 366: 455-463. DOI: 10.1016/J.Apsusc.2016.01.123 |
0.393 |
|
| 2015 |
Kent T, Tang K, Chobpattana V, Negara MA, Edmonds M, Mitchell W, Sahu B, Galatage R, Droopad R, McIntyre P, Kummel AC. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces. The Journal of Chemical Physics. 143: 164711. PMID 26520547 DOI: 10.1063/1.4934656 |
0.336 |
|
| 2015 |
Scheuermann AG, Lawrence JP, Kemp KW, Ito T, Walsh A, Chidsey CE, Hurley PK, McIntyre PC. Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes. Nature Materials. PMID 26480231 DOI: 10.1038/Nmat4451 |
0.337 |
|
| 2015 |
Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. Acs Applied Materials & Interfaces. PMID 26334784 DOI: 10.1021/Acsami.5B06087 |
0.446 |
|
| 2015 |
Zhernokletov DM, Negara MA, Long RD, Aloni S, Nordlund D, McIntyre PC. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. Acs Applied Materials & Interfaces. 7: 12774-80. PMID 25988586 DOI: 10.1021/Acsami.5B01600 |
0.409 |
|
| 2015 |
Byun YC, Choi S, An Y, McIntyre PC, Kim H. Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 7: 7445. PMID 25823007 DOI: 10.1021/Acsami.5B02372 |
0.385 |
|
| 2015 |
Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497 |
0.349 |
|
| 2015 |
Tang K, Winter R, Zhang L, Droopad R, Eizenberg M, McIntyre PC. Border trap reduction in Al2O3/InGaAs gate stacks Applied Physics Letters. 107. DOI: 10.1063/1.4936100 |
0.33 |
|
| 2015 |
Winter R, Krylov I, Cytermann C, Tang K, Ahn J, McIntyre PC, Eizenberg M. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing Journal of Applied Physics. 118. DOI: 10.1063/1.4928158 |
0.302 |
|
| 2015 |
Li Y, Clady R, Marshall AF, Park J, Thombare SV, Chan G, Schmidt TW, Brongersma ML, McIntyre PC. Ultrafast Carrier Dynamics of a Photo-Excited Germanium Nanowire-Air Metamaterial Acs Photonics. 2: 1091-1098. DOI: 10.1021/Acsphotonics.5B00147 |
0.325 |
|
| 2015 |
Marshall AF, Thombare SV, McIntyre PC. Crystallization Pathway for Metastable Hexagonal Close-Packed Gold in Germanium Nanowire Catalysts Crystal Growth and Design. 15: 3734-3739. DOI: 10.1021/Acs.Cgd.5B00803 |
0.37 |
|
| 2014 |
Byun YC, Choi S, An Y, McIntyre PC, Kim H. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 6: 10482-8. PMID 24911531 DOI: 10.1021/Am502048D |
0.429 |
|
| 2014 |
Chen H, Ahn J, McIntyre PC, Taur Y. Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 03D111. DOI: 10.1116/1.4864618 |
0.314 |
|
| 2014 |
Wang Y, Ryu S, McIntyre PC, Cai W. A three-dimensional phase field model for nanowire growth by the vapor-liquid-solid mechanism Modelling and Simulation in Materials Science and Engineering. 22. DOI: 10.1088/0965-0393/22/5/055005 |
0.612 |
|
| 2014 |
Winter R, Krylov I, Ahn J, McIntyre PC, Eizenberg M. The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack Applied Physics Letters. 104. DOI: 10.1063/1.4879246 |
0.391 |
|
| 2013 |
Hu S, Goldthorpe IA, Marshall AF, McIntyre PC. (Invited) Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local Composition and Strain Characterization Ecs Transactions. 50: 635-643. DOI: 10.1149/05009.0635ecst |
0.709 |
|
| 2013 |
Hurley PK, O'Connor E, Djara V, Monaghan S, Povey IM, Long RD, Sheehan B, Lin J, McIntyre PC, Brennan B, Wallace RM, Pemble ME, Cherkaoui K. The characterization and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system Ieee Transactions On Device and Materials Reliability. 13: 429-443. DOI: 10.1109/Tdmr.2013.2282216 |
0.317 |
|
| 2013 |
Zhang L, Gunji M, Thombare S, McIntyre PC. EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection Ieee Electron Device Letters. 34: 732-734. DOI: 10.1109/Led.2013.2259137 |
0.321 |
|
| 2013 |
Ahn J, McIntyre PC. Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3 Applied Physics Letters. 103: 251602. DOI: 10.1063/1.4850520 |
0.411 |
|
| 2013 |
Thombare SV, Marshall AF, McIntyre PC. Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst Apl Materials. 1: 061101. DOI: 10.1063/1.4833935 |
0.343 |
|
| 2013 |
Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102 |
0.381 |
|
| 2013 |
Ahn J, Kent T, Chagarov E, Tang K, Kummel AC, McIntyre PC. Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces Applied Physics Letters. 103. DOI: 10.1063/1.4818330 |
0.408 |
|
| 2013 |
Minaye Hashemi FS, Thombare S, Morral AFI, Brongersma ML, McIntyre PC. Effects of surface oxide formation on germanium nanowire band-edge photoluminescence Applied Physics Letters. 102. DOI: 10.1063/1.4812334 |
0.369 |
|
| 2013 |
Scheuermann AG, Prange JD, Gunji M, Chidsey CED, McIntyre PC. Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal-insulator-silicon anodes Energy and Environmental Science. 6: 2487-2496. DOI: 10.1039/C3Ee41178H |
0.437 |
|
| 2013 |
Marshall A, Thombare S, McIntyre P. In Situ TEM Studies of Metastable Hexagonal Close-packed Au Nanocatalysts at the Tips of Ge Nanowires Microscopy and Microanalysis. 19: 1462-1463. DOI: 10.1017/S1431927613009306 |
0.349 |
|
| 2012 |
Gunji M, Thombare SV, Hu S, McIntyre PC. Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation. Nanotechnology. 23: 385603. PMID 22947505 DOI: 10.1088/0957-4484/23/38/385603 |
0.603 |
|
| 2012 |
Hu S, Kawamura Y, Huang KC, Li Y, Marshall AF, Itoh KM, Brongersma ML, McIntyre PC. Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells. Nano Letters. 12: 1385-91. PMID 22364183 DOI: 10.1021/Nl204053W |
0.608 |
|
| 2012 |
Long RD, McIntyre PC. Surface preparation and deposited gate oxides for gallium nitride based metal oxide semiconductor devices Materials. 5: 1297-1335. DOI: 10.3390/Ma5071297 |
0.389 |
|
| 2012 |
Chen HP, Yuan Y, Yu B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. Interface-State Modeling of Al 2O 3-InGaAs MOS From Depletion to Inversion Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2012.2205255 |
0.309 |
|
| 2012 |
Yuan Y, Yu B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed bulk-oxide trap model for Al 2O 3 InGaAs MOS devices Ieee Transactions On Electron Devices. 59: 2100-2106. DOI: 10.1109/Ted.2012.2197000 |
0.338 |
|
| 2012 |
Kawamura Y, Huang KCY, Thombare SV, Hu S, Gunji M, Ishikawa T, Brongersma ML, Itoh KM, McIntyre PC. Direct-gap photoluminescence from germanium nanowires Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.035306 |
0.556 |
|
| 2012 |
Long RD, Hazeghi A, Gunji M, Nishi Y, McIntyre PC. Temperature-dependent capacitance-voltage analysis of defects in Al 2O3 gate dielectric stacks on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4769827 |
0.363 |
|
| 2012 |
Thombare SV, Marshall AF, McIntyre PC. Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst Journal of Applied Physics. 112: 054325. DOI: 10.1063/1.4749797 |
0.404 |
|
| 2012 |
Paterson GW, Bentley SJ, Holland MC, Thayne IG, Ahn J, Long RD, McIntyre PC, Long AR. Admittance and subthreshold characteristics of atomic-layer-deposition Al 2O 3 on In 0.53Ga 0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.4720940 |
0.357 |
|
| 2012 |
Hu S, McIntyre PC. Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures Journal of Applied Physics. 111: 044908. DOI: 10.1063/1.3682110 |
0.653 |
|
| 2011 |
Chen YW, Prange JD, Dühnen S, Park Y, Gunji M, Chidsey CE, McIntyre PC. Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation. Nature Materials. 10: 539-44. PMID 21685904 DOI: 10.1038/Nmat3047 |
0.374 |
|
| 2011 |
Lin AY, McIntyre PC. Publisher's Note: Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ [Electrochem. Solid-State Lett., 14, B96 (2011)] Electrochemical and Solid-State Letters. 14: S9. DOI: 10.1149/2.010111Esl |
0.38 |
|
| 2011 |
Lin AY, McIntyre PC. Morphological stability of mesoporous Pt thin films deposited via nanosphere lithography on YSZ Electrochemical and Solid-State Letters. 14: B96-B99. DOI: 10.1149/1.3609257 |
0.405 |
|
| 2011 |
Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK. Charged defect quantification in PtAl2O3In 0.53Ga0.47AsInP MOS capacitors Journal of the Electrochemical Society. 158: G103-G107. DOI: 10.1149/1.3545799 |
0.352 |
|
| 2011 |
Bentley SJ, Holland M, Li X, Paterson GW, Zhou H, Ignatova O, Macintyre D, Thoms S, Asenov A, Shin B, Ahn J, McIntyre PC, Thayne IG. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Ieee Electron Device Letters. 32: 494-496. DOI: 10.1109/Led.2011.2107876 |
0.3 |
|
| 2011 |
Yuan Y, Wang L, Yu B, Shin B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed model for border traps in Al2O3 - InGaAs MOS devices Ieee Electron Device Letters. 32: 485-487. DOI: 10.1109/Led.2011.2105241 |
0.302 |
|
| 2011 |
Ahn J, Geppert I, Gunji M, Holland M, Thayne I, Eizenberg M, McIntyre PC. Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices Applied Physics Letters. 99: 232902. DOI: 10.1063/1.3662966 |
0.444 |
|
| 2011 |
Swaminathan S, Sun Y, Pianetta P, McIntyre PC. Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties Journal of Applied Physics. 110. DOI: 10.1063/1.3647761 |
0.468 |
|
| 2011 |
Kim EJ, Shandalov M, Saraswat KC, McIntyre PC. Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics Applied Physics Letters. 98. DOI: 10.1063/1.3527977 |
0.391 |
|
| 2011 |
Gunji M, Marshall AF, McIntyre PC. Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation Journal of Applied Physics. 109: 014324. DOI: 10.1063/1.3506420 |
0.433 |
|
| 2011 |
Zednik RJ, Varatharajan A, Oliver M, Valanoor N, McIntyre PC. Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect Advanced Functional Materials. 21: 3104-3110. DOI: 10.1002/Adfm.201100445 |
0.762 |
|
| 2010 |
Marshall AF, Goldthorpe IA, Adhikari H, Koto M, Wang YC, Fu L, Olsson E, McIntyre PC. Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth. Nano Letters. 10: 3302-6. PMID 20687570 DOI: 10.1021/Nl100913D |
0.722 |
|
| 2010 |
Koto M, Marshall AF, Goldthorpe IA, McIntyre PC. Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon. Small (Weinheim An Der Bergstrasse, Germany). 6: 1032-7. PMID 20411571 DOI: 10.1002/Smll.200901764 |
0.743 |
|
| 2010 |
Swaminathan S, McIntyre PC. Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics Electrochemical and Solid-State Letters. 13: G79. DOI: 10.1149/1.3457480 |
0.371 |
|
| 2010 |
Chen YW, Liu M, Kaneko T, McIntyre PC. Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors Electrochemical and Solid-State Letters. 13: G29. DOI: 10.1149/1.3280224 |
0.381 |
|
| 2010 |
Roodenko K, Goldthorpe IA, McIntyre PC, Chabal YJ. Modified phonon confinement model for Raman spectroscopy of nanostructured materials Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.115210 |
0.701 |
|
| 2010 |
McIntyre PC, Adhikari H, Goldthorpe IA, Hu S, Leu PW, Marshall AF, Chidsey CED. Group IV semiconductor nanowire arrays: Epitaxy in different contexts Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024016 |
0.801 |
|
| 2010 |
Ko C, Shandalov M, McIntyre PC, Ramanathan S. High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure Applied Physics Letters. 97: 82102. DOI: 10.1063/1.3482940 |
0.428 |
|
| 2010 |
Marshall AF, McIntyre PC. Interface-controlled layer exchange in metal-induced crystallization of germanium thin films Applied Physics Letters. 97: 082104. DOI: 10.1063/1.3480600 |
0.467 |
|
| 2010 |
Shin B, Clemens JB, Kelly MA, Kummel AC, McIntyre PC. Arsenic decapping and half cycle reactions during atomic layer deposition of Al2 O3 on In0.53 Ga0.47 As (001) Applied Physics Letters. 96. DOI: 10.1063/1.3452336 |
0.367 |
|
| 2010 |
Shin B, Weber JR, Long RD, Hurley PK, Van De Walle CG, McIntyre PC. Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates Applied Physics Letters. 96. DOI: 10.1063/1.3399776 |
0.355 |
|
| 2010 |
Swaminathan S, Shandalov M, Oshima Y, McIntyre PC. Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices Applied Physics Letters. 96: 082904. DOI: 10.1063/1.3313946 |
0.378 |
|
| 2010 |
Kim EJ, Wang L, Asbeck PM, Saraswat KC, McIntyre PC. Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96. DOI: 10.1063/1.3281027 |
0.368 |
|
| 2009 |
Hu S, Leu PW, Marshall AF, McIntyre PC. Single-crystal germanium layers grown on silicon by nanowire seeding. Nature Nanotechnology. 4: 649-53. PMID 19809455 DOI: 10.1038/Nnano.2009.233 |
0.613 |
|
| 2009 |
Goldthorpe IA, Marshall AF, McIntyre PC. Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires. Nano Letters. 9: 3715-9. PMID 19795838 DOI: 10.1021/Nl9018148 |
0.719 |
|
| 2009 |
Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE. Gold removal from germanium nanowires. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 9473-9. PMID 19419180 DOI: 10.1021/La900725B |
0.716 |
|
| 2009 |
Wallace RM, McIntyre PC, Kim J, Nishi Y. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors Mrs Bulletin. 34: 493-503. DOI: 10.1557/Mrs2009.137 |
0.373 |
|
| 2009 |
Shin B, Cagnon J, Long RD, Hurley PK, Stemmer S, McIntyre PC. Unpinned Interface between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In 0.53Ga0.47As (001) Electrochemical and Solid-State Letters. 12: G40-G43. DOI: 10.1149/1.3139603 |
0.408 |
|
| 2009 |
Mcintyre PC, Adhikari H, Goldthorpe IA, Marshall AF, Chidsey CED. Group IV semiconductor nanowire arrays: Different "flavors" of epitaxy Proceedings of Spie - the International Society For Optical Engineering. 7406. DOI: 10.1117/12.827425 |
0.756 |
|
| 2009 |
Panzer MA, Shandalov M, Rowlette JA, Oshima Y, Chen YW, McIntyre PC, Goodson KE. Thermal properties of ultrathin hafnium oxide gate dielectric films Ieee Electron Device Letters. 30: 1269-1271. DOI: 10.1109/Led.2009.2032937 |
0.409 |
|
| 2009 |
Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006 |
0.414 |
|
| 2009 |
Shandalov M, McIntyre PC. Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films Journal of Applied Physics. 106: 084322. DOI: 10.1063/1.3243077 |
0.476 |
|
| 2009 |
Swaminathan S, Oshima Y, Kelly MA, McIntyre PC. Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization Applied Physics Letters. 95: 032907. DOI: 10.1063/1.3177195 |
0.431 |
|
| 2009 |
Oshima Y, Shandalov M, Sun Y, Pianetta P, McIntyre PC. Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density Applied Physics Letters. 94. DOI: 10.1063/1.3116624 |
0.443 |
|
| 2009 |
Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CED. Growth of germanium crystals from electrodeposited gold in local crucibles Applied Physics Letters. 94. DOI: 10.1063/1.3074363 |
0.748 |
|
| 2009 |
Marshall AF, Goldthorpe IA, Koto M, McIntyre PC, Zhu J, Peng H, Barnett DM, Nix WD, Cui Y. Nanowires for energy applications: Fundamental growth studies Microscopy and Microanalysis. 15: 144-145. DOI: 10.1017/S1431927609094641 |
0.68 |
|
| 2009 |
McIntyre PC, Oshima Y, Kim E, Saraswat KC. Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper) Microelectronic Engineering. 86: 1536-1539. DOI: 10.1016/J.Mee.2009.03.081 |
0.448 |
|
| 2009 |
Choi D, Harris JS, Kim E, McIntyre PC, Cagnon J, Stemmer S. High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication Journal of Crystal Growth. 311: 1962-1971. DOI: 10.1016/J.Jcrysgro.2008.09.138 |
0.489 |
|
| 2008 |
Leu PW, Adhikari H, Koto M, Kim KH, Rouffignac Pd, Marshall AF, Gordon RG, Chidsey CE, McIntyre PC. Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties. Nanotechnology. 19: 485705. PMID 21836312 DOI: 10.1088/0957-4484/19/48/485705 |
0.386 |
|
| 2008 |
Goldthorpe IA, Marshall AF, McIntyre PC. Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays. Nano Letters. 8: 4081-6. PMID 18954126 DOI: 10.1021/Nl802408Y |
0.731 |
|
| 2008 |
Oshima Y, Sun Y, Kuzum D, Sugawara T, Saraswat KC, Pianetta P, McIntyre PC. Chemical bonding, interfaces, and defects in hafnium oxidegermanium oxynitride gate stacks on Ge(100) Journal of the Electrochemical Society. 155: G304-G309. DOI: 10.1149/1.2995832 |
0.336 |
|
| 2008 |
Delabie A, Brunco DP, Conard T, Favia P, Bender H, Franquet A, Sioncke S, Vandervorst W, Van Elshocht S, Heyns M, Meuris M, Kim E, McIntyre PC, Saraswat KC, Lebeau JM, et al. Atomic layer deposition of hafnium oxide on ge and gaas substrates: Precursors and surface preparation Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2979144 |
0.448 |
|
| 2008 |
Ozguven N, McIntyre PC. Selective Oxidation of SiGe Alloys: A Route to Ge-on-Insulator Structures with Controlled Biaxial Strain Electrochemical and Solid-State Letters. 11: H138. DOI: 10.1149/1.2896080 |
0.815 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272 |
0.369 |
|
| 2008 |
Schmidt V, McIntyre PC, Gösele U. Morphological instability of misfit-strained core-shell nanowires Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.235302 |
0.307 |
|
| 2008 |
Shin B, Choi D, Harris JS, McIntyre PC. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators Applied Physics Letters. 93: 052911. DOI: 10.1063/1.2966357 |
0.376 |
|
| 2008 |
Chen PT, Triplett BB, Chambers JJ, Colombo L, McIntyre PC, Nishi Y. Analysis of electrically biased paramagnetic defect centers in HfO 2 and HfxSi1-x O2/(100) Si interfaces Journal of Applied Physics. 104. DOI: 10.1063/1.2948922 |
0.426 |
|
| 2008 |
Choi D, Kim E, McIntyre PC, Harris JS. Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication Applied Physics Letters. 92: 203502. DOI: 10.1063/1.2929386 |
0.432 |
|
| 2008 |
Ozguven N, McIntyre PC. Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures Applied Physics Letters. 92: 181907. DOI: 10.1063/1.2917798 |
0.79 |
|
| 2008 |
Chen PT, Sun Y, Kim E, McIntyre PC, Tsai W, Garner M, Pianetta P, Nishi Y, Chui CO. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838471 |
0.459 |
|
| 2007 |
Adhikari H, Marshall AF, Goldthorpe IA, Chidsey CE, McIntyre PC. Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature. Acs Nano. 1: 415-22. PMID 19206662 DOI: 10.1021/Nn7001486 |
0.736 |
|
| 2007 |
Woodruff JH, Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CED. Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal Nano Letters. 7: 1637-1642. PMID 17530912 DOI: 10.1021/Nl070595X |
0.727 |
|
| 2007 |
Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF. ALD resist formed by vapor-deposited self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 1160-5. PMID 17241027 DOI: 10.1021/La0606401 |
0.734 |
|
| 2007 |
Sugawara T, Sreenivasan R, Oshima Y, McIntyre PC. Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2 Mrs Proceedings. 996. DOI: 10.1557/Proc-0996-H04-02 |
0.713 |
|
| 2007 |
Ginestra CN, Sreenivasan R, Karthikeyan A, Ramanathan S, McIntyre PC. Atomic layer deposition of Y2O3/ZrO2 nanolaminates: A route to ultrathin solid-state electrolyte membranes Electrochemical and Solid-State Letters. 10: B161-B165. DOI: 10.1149/1.2759606 |
0.748 |
|
| 2007 |
Chen Y, McIntyre PC. Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability Applied Physics Letters. 91: 232906. DOI: 10.1063/1.2822419 |
0.401 |
|
| 2007 |
Adhikari H, McIntyre PC, Marshall AF, Chidsey CED. Conditions for subeutectic growth of Ge nanowires by the vapor-liquid-solid mechanism Journal of Applied Physics. 102. DOI: 10.1063/1.2803893 |
0.357 |
|
| 2007 |
Chen Y, McIntyre PC. Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties Applied Physics Letters. 91: 072910. DOI: 10.1063/1.2769394 |
0.479 |
|
| 2007 |
Wang R, McIntyre PC, Baniecki JD, Nomura K, Shioga T, Kurihara K, Ishii M. Erratum: “Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520°C” [Appl. Phys. Lett. 87, 192906 (2005)] Applied Physics Letters. 90: 199901. DOI: 10.1063/1.2735541 |
0.572 |
|
| 2007 |
Sreenivasan R, Sugawara T, Saraswat KC, McIntyre PC. High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications Applied Physics Letters. 90: 102101. DOI: 10.1063/1.2643085 |
0.751 |
|
| 2007 |
Zednik RJ, McIntyre PC, Baniecki JD, Ishii M, Shioga T, Kurihara K. Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films Journal of Applied Physics. 101: 066104. DOI: 10.1063/1.2511367 |
0.762 |
|
| 2007 |
Sugawara T, Oshima Y, Sreenivasan R, McIntyre PC. Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers Applied Physics Letters. 90: 112912. DOI: 10.1063/1.2472197 |
0.721 |
|
| 2007 |
Ozguven N, McIntyre PC. Oxidation-enhanced interdiffusion in Si1−xGex∕Si1−yGey superlattices Applied Physics Letters. 90: 082109. DOI: 10.1063/1.2434162 |
0.814 |
|
| 2007 |
Ha J, McIntyre PC, (KJ) Cho K. First principles study of the HfO2∕SiO2 interface: Application to high-k gate structures Journal of Applied Physics. 101: 033706. DOI: 10.1063/1.2433696 |
0.339 |
|
| 2007 |
Marshall A, Adhikari H, Chidsey C, McIntyre P. Analysis of the Sub-Eutectic Growth of Ge Nanowires using In Situ TEM Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607075101 |
0.334 |
|
| 2006 |
Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. Optics Letters. 31: 2565-7. PMID 16902620 DOI: 10.1364/Ol.31.002565 |
0.384 |
|
| 2006 |
Adhikari H, Marshall AF, Chidsey CED, McIntyre PC. Germanium nanowire epitaxy: Shape and orientation control Nano Letters. 6: 318-323. PMID 16464057 DOI: 10.1021/Nl052231F |
0.407 |
|
| 2006 |
Chen R, Porter DW, Kim H, McIntyre PC, Bent SF. Area Selective Atomic Layer Deposition by Soft Lithography Mrs Proceedings. 917. DOI: 10.1557/PROC-0917-E11-05 |
0.329 |
|
| 2006 |
Chen R, Porter DW, Kim H, Mcintyre PC, Bent SF. Area selective atomic layer deposition by soft lithography Materials Research Society Symposium Proceedings. 917: 161-166. DOI: 10.1557/Proc-0917-E11-05 |
0.335 |
|
| 2006 |
Sugawara T, Sreenivasan R, McIntyre PC. Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E01-02 |
0.688 |
|
| 2006 |
Sugawara T, Sreenivasan R, McIntyre PC. Mechanism of germanium plasma nitridation Journal of Vacuum Science & Technology B. 24: 2442-2448. DOI: 10.1116/1.2348887 |
0.72 |
|
| 2006 |
Sugawara T, Sreenivasan R, McIntyre PC. Physical and electrical properties of plasma nitrided germanium oxynitride Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2449. DOI: 10.1116/1.2348886 |
0.669 |
|
| 2006 |
Chui CO, Kim H, Chi D, Mcintyre PC, Saraswat KC. Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics Ieee Transactions On Electron Devices. 53: 1509-1516. DOI: 10.1109/Ted.2006.875812 |
0.46 |
|
| 2006 |
Seo K, Sreenivasan R, McIntyre PC, Saraswat KC. Improvement in High- $k$ $(hboxHfO_2/hboxSiO_2)$ Reliability by Incorporation of Fluorine Ieee Electron Device Letters. 27: 821-823. DOI: 10.1109/Led.2006.882564 |
0.698 |
|
| 2006 |
Seo KI, Lee DI, Pianetta P, Kim H, Saraswat KC, McIntyre PC. Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer Applied Physics Letters. 89. DOI: 10.1063/1.2358834 |
0.386 |
|
| 2006 |
Sreenivasan R, McIntyre PC, Kim H, Saraswat KC. Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition Applied Physics Letters. 89: 112903. DOI: 10.1063/1.2348735 |
0.741 |
|
| 2005 |
Jagannathan H, Kim H, Deal M, McIntyre PC, Nishi Y. Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates The Japan Society of Applied Physics. 2005: 1012-1013. DOI: 10.7567/Ssdm.2005.G-9-2 |
0.347 |
|
| 2005 |
Welz SJ, Fu LF, Erni R, Kurasawa M, McIntyre PC, Browning ND. Passive Layer Formation at Ferroelectric PbTiO3/Pt Interfaces Studied by EELS Mrs Proceedings. 875. DOI: 10.1557/PROC-875-O14.3 |
0.301 |
|
| 2005 |
Kim H, Saraswat KC, McIntyre PC. Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition Journal of Materials Research. 20: 3125-3132. DOI: 10.1557/Jmr.2005.0394 |
0.495 |
|
| 2005 |
Marshall AF, Aubertine DB, Nix WD, McIntyre PC. Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures Journal of Materials Research. 20: 447-455. DOI: 10.1557/Jmr.2005.0065 |
0.449 |
|
| 2005 |
Adhikari H, McIntyre PC, Sun S, Pianetta P, Chidsey CED. Photoemission studies of passivation of germanium nanowires Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2158027 |
0.373 |
|
| 2005 |
Fu LF, Welz SJ, Browning ND, Kurasawa M, McIntyre PC. Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric PbTiO3∕Pt interfaces Applied Physics Letters. 87: 262904. DOI: 10.1063/1.2144279 |
0.402 |
|
| 2005 |
Wang R, McIntyre PC, Baniecki JD, Nomura K, Shioga T, Kurihara K, Ishii M. Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 °C Applied Physics Letters. 87: 192906. DOI: 10.1063/1.2125113 |
0.595 |
|
| 2005 |
Seo KI, McIntyre PC, Sun S, Lee DI, Pianetta P, Saraswat KC. Chemical states and electronic structure of a HfO 2/Ge(001) interface Applied Physics Letters. 87. DOI: 10.1063/1.2006211 |
0.377 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Porter DW, Bent SF. Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922076 |
0.402 |
|
| 2005 |
Seo K, McIntyre PC, Kim H, Saraswat KC. Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing Applied Physics Letters. 86: 082904. DOI: 10.1063/1.1866644 |
0.467 |
|
| 2005 |
Aubertine DB, McIntyre PC. Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures Journal of Applied Physics. 97: 013531. DOI: 10.1063/1.1828240 |
0.414 |
|
| 2005 |
Wang R, McIntyre PC. O18 tracer diffusion in Pb(Zr,Ti)O3 thin films: A probe of local oxygen vacancy concentration Journal of Applied Physics. 97: 023508. DOI: 10.1063/1.1814813 |
0.527 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Bent SF. Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition Chemistry of Materials. 17: 536-544. DOI: 10.1021/Cm0486666 |
0.342 |
|
| 2005 |
Welz SJ, Fu LF, Erni R, Kurasawa M, McIntyre PC, Browning ND. Passive Layer Formation at Pt/PbTiO3 Interfaces Identified Using STEM and EFTEM Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605502198 |
0.306 |
|
| 2005 |
Saraswat KC, Chui CO, Krishnamohan T, Nayfeh A, McIntyre P. Ge based high performance nanoscale MOSFETs Microelectronic Engineering. 80: 15-21. DOI: 10.1016/J.Mee.2005.04.038 |
0.369 |
|
| 2004 |
Wang R, McIntyre PC, Baniecki JD, Nomura K, Shioga T, Kurihara K. Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films Mrs Proceedings. 833. DOI: 10.1557/Proc-833-G1.7 |
0.608 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Controlling area-selective atomic layer deposition of HfO 2 dielectric by self-assembled monolayers Materials Research Society Symposium Proceedings. 811: 57-62. DOI: 10.1557/Proc-811-D3.3 |
0.314 |
|
| 2004 |
Kim H, McIntyre PC, Saraswat KC. Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition Journal of Materials Research. 19: 643-650. DOI: 10.1557/Jmr.2004.19.2.643 |
0.45 |
|
| 2004 |
Schloss LF, Kim H, McIntyre PC. Oxygen permeability of ferroelectric thin film top electrodes and its effect on detectable fatigue cycling-induced oxygen isotope motion Journal of Materials Research. 19: 1265-1272. DOI: 10.1557/Jmr.2004.0164 |
0.309 |
|
| 2004 |
McIntyre PC. Equilibrium Point Defect and Electronic Carrier Distributions near Interfaces in Acceptor-Doped Strontium Titanate Journal of the American Ceramic Society. 83: 1129-1136. DOI: 10.1111/J.1151-2916.2000.Tb01343.X |
0.337 |
|
| 2004 |
Chui CO, Kim H, McIntyre PC, Saraswat KC. Atomic layer deposition of high-κ dielectric for germanium MOS applications - substrate surface preparation Ieee Electron Device Letters. 25: 274-276. DOI: 10.1109/Led.2004.827285 |
0.432 |
|
| 2004 |
Ha J, Chi D, McIntyre PC. In situ low-angle x-ray scattering study of phase separation in initially mixed HfO2–SiO2 thin film interfaces Applied Physics Letters. 85: 5884-5886. DOI: 10.1063/1.1831554 |
0.668 |
|
| 2004 |
Chi D, McIntyre PC. Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates Applied Physics Letters. 85: 4699-4701. DOI: 10.1063/1.1814799 |
0.477 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Cho MH. Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition Applied Physics Letters. 85: 2902-2904. DOI: 10.1063/1.1797564 |
0.441 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Stemmer S. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer Journal of Applied Physics. 96: 3467-3472. DOI: 10.1063/1.1776636 |
0.391 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Self-assembled monolayer resist for atomic layer deposition of HfO 2 and ZrO 2 high-κ gate dielectrics Applied Physics Letters. 84: 4017-4019. DOI: 10.1063/1.1751211 |
0.471 |
|
| 2004 |
Kim H, Marshall A, McIntyre PC, Saraswat KC. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies Applied Physics Letters. 84: 2064-2066. DOI: 10.1063/1.1667621 |
0.469 |
|
| 2004 |
Cho M, Chang HS, Moon DW, Kang SK, Min BK, Ko D, Kim HS, McIntyre PC, Lee JH, Ku JH, Lee NI. Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition Applied Physics Letters. 84: 1171-1173. DOI: 10.1063/1.1647703 |
0.476 |
|
| 2004 |
Ramanathan S, McIntyre PC, Guha S, Gusev E. Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation Applied Physics Letters. 84: 389-391. DOI: 10.1063/1.1636532 |
0.337 |
|
| 2003 |
Kelman MB, McIntyre PC, Hendrix BC, Bilodeau SM, Roeder JF, Brennan S. Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films Journal of Materials Research. 18: 173-179. DOI: 10.1557/Jmr.2003.0024 |
0.807 |
|
| 2003 |
Ramanathan S, McIntyre PC, Luning J, Lysaght PS, Yang Y, Chen Z, Stemmer S. Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics Journal of the Electrochemical Society. 150: F173. DOI: 10.1149/1.1604115 |
0.389 |
|
| 2003 |
Ramanathan S, Chi D, McIntyre PC, Wetteland CJ, Tesmer JR. Ultraviolet-Ozone Oxidation of Metal Films Journal of the Electrochemical Society. 150: F110. DOI: 10.1149/1.1566416 |
0.328 |
|
| 2003 |
Kim H, Chui CO, Saraswat KC, McIntyre PC. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy Applied Physics Letters. 83: 2647-2649. DOI: 10.1063/1.1613031 |
0.425 |
|
| 2003 |
Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644 |
0.337 |
|
| 2003 |
Kelman MB, McIntyre PC, Gruverman A, Hendrix BC, Bilodeau SM, Roeder JF. Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O3 thin films Journal of Applied Physics. 94: 5210-5219. DOI: 10.1063/1.1610773 |
0.795 |
|
| 2003 |
Wang R, McIntyre PC. Point defect distributions and their electrical effects on (Ba,Sr)TiO3/Pt thin films Journal of Applied Physics. 94: 1926-1933. DOI: 10.1063/1.1590063 |
0.58 |
|
| 2003 |
Aubertine DB, Ozguven N, McIntyre PC, Brennan S. Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures Journal of Applied Physics. 94: 1557-1564. DOI: 10.1063/1.1589600 |
0.801 |
|
| 2003 |
Lee S, Kim H, McIntyre PC, Saraswat KC, Byun J. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application Applied Physics Letters. 82: 2874-2876. DOI: 10.1063/1.1569985 |
0.45 |
|
| 2003 |
Kelman MB, McIntyre PC, Hendrix BC, Bilodeau SM, Roeder JF. Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films Journal of Applied Physics. 93: 9231-9236. DOI: 10.1063/1.1569431 |
0.801 |
|
| 2003 |
Schloss LF, McIntyre PC. Polarization recovery of fatigued Pb(Zr,Ti)O3 thin films: Switching current studies Journal of Applied Physics. 93: 1743-1747. DOI: 10.1063/1.1536019 |
0.339 |
|
| 2003 |
Kim H, McIntyre PC, Saraswat KC. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition Applied Physics Letters. 82: 106-108. DOI: 10.1063/1.1533117 |
0.449 |
|
| 2002 |
Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1: 241-6. PMID 12618786 DOI: 10.1038/Nmat769 |
0.376 |
|
| 2002 |
Chui CO, Ramanathan S, Triplett BB, McIntyre PC, Saraswat KC. Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric Ieee Electron Device Letters. 23: 473-475. DOI: 10.1109/Led.2002.801319 |
0.381 |
|
| 2002 |
Ramanathan S, McIntyre PC, Luning J, Pianetta P, Muller DA. Structural studies of ultrathin zirconia dielectrics Philosophical Magazine Letters. 82: 519-528. DOI: 10.1080/09500830210157108 |
0.45 |
|
| 2002 |
Schloss LF, McIntyre PC, Hendrix BC, Bilodeau SM, Roeder JF, Gilbert SR. Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O 3 thin films Applied Physics Letters. 81: 3218-3220. DOI: 10.1063/1.1516628 |
0.38 |
|
| 2002 |
Kim H, McIntyre PC. Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics Journal of Applied Physics. 92: 5094-5102. DOI: 10.1063/1.1510590 |
0.378 |
|
| 2002 |
Aubertine DB, Mander MA, Ozguven N, Marshall AF, McIntyre PC, Chu JO, Mooney PM. Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers Journal of Applied Physics. 92: 5027-5035. DOI: 10.1063/1.1508424 |
0.788 |
|
| 2002 |
Perkins CM, Triplett BB, McIntyre PC, Saraswat KC, Shero E. Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics Applied Physics Letters. 81: 1417-1419. DOI: 10.1063/1.1499513 |
0.469 |
|
| 2002 |
Ramanathan S, McIntyre PC. Ultrathin zirconia/SiO2 dielectric stacks grown by ultraviolet-ozone oxidation Applied Physics Letters. 80: 3793-3795. DOI: 10.1063/1.1481241 |
0.441 |
|
| 2002 |
Ramanathan S, Park C, McIntyre PC. Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation Journal of Applied Physics. 91: 4521-4527. DOI: 10.1063/1.1459103 |
0.46 |
|
| 2002 |
Kelman MB, Schloss LF, McIntyre PC, Hendrix BC, Bilodeau SM, Roeder JF. Thickness-dependent phase evolution of polycrystalline Pb(Zr 0.35Ti 0.65)O 3 thin films Applied Physics Letters. 80: 1258-1260. DOI: 10.1063/1.1449532 |
0.803 |
|
| 2002 |
Wang RV, Becker RJ, McIntyre PC. Effects of long-time DC bias on D2O- and D2/N2-annealed BST thin films Journal of Electroceramics. 9: 25-30. DOI: 10.1023/A:1021685901142 |
0.405 |
|
| 2001 |
Ramanathan S, Clemens BM, McIntyre PC, Dahmen U. Microstructural study of epitaxial platinum and Permalloy/platinum films grown on (0001) sapphire Philosophical Magazine A. 81: 2073-2094. DOI: 10.1080/01418610108216653 |
0.34 |
|
| 2001 |
Ramanathan S, Clemens BM, McIntyre PC, Dahmen U. Microstructural study of epitaxial platinum and permalloy/platinum films grown on (0001) sapphire Philosophical Magazine. 81: 2073-2094. DOI: 10.1080/01418610010028981 |
0.412 |
|
| 2001 |
Ramanathan S, Muller DA, Wilk GD, Park CM, McIntyre PC. Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics Applied Physics Letters. 79: 3311-3313. DOI: 10.1063/1.1418266 |
0.334 |
|
| 2001 |
Ramanathan S, Wilk GD, Muller DA, Park C, McIntyre PC. Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation Applied Physics Letters. 79: 2621-2623. DOI: 10.1063/1.1410871 |
0.46 |
|
| 2001 |
McIntyre PC. Point defect equilibrium in strontium titanate thin films Journal of Applied Physics. 89: 8074-8084. DOI: 10.1063/1.1369402 |
0.413 |
|
| 2001 |
McIntyre PC, Ahn JH, Becker RJ, Wang RV, Gilbert SR, Mirkarimi LW, Schulberg MT. Deuterium in (Ba,Sr)TiO3 thin films: Kinetics and mechanisms of incorporation and removal during annealing Journal of Applied Physics. 89: 6378-6388. DOI: 10.1063/1.1367316 |
0.429 |
|
| 2001 |
Perkins CM, Triplett BB, McIntyre PC, Saraswat KC, Haukka S, Tuominen M. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition Applied Physics Letters. 78: 2357-2359. DOI: 10.1063/1.1362331 |
0.508 |
|
| 2001 |
Werner MC, Banerjee I, Zhang R, McIntyre PC, Tani N, Tanimura M. Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr)TiO3 thin films Journal of Applied Physics. 89: 2309-2313. DOI: 10.1063/1.1325378 |
0.397 |
|
| 2000 |
Shaw TM, Trolier-McKinstry S, McIntyre PC. The Properties of Ferroelectric Films at Small Dimensions Annual Review of Materials Science. 30: 263-298. DOI: 10.1146/Annurev.Matsci.30.1.263 |
0.424 |
|
| 2000 |
Ahn J, McIntyre PC, Mirkarimi LW, Gilbert SR, Amano J, Schulberg M. Deuterium-induced degradation of (Ba, Sr)TiO3 films Applied Physics Letters. 77: 1378-1380. DOI: 10.1063/1.1290139 |
0.406 |
|
| 2000 |
Werner MC, Banerjee I, McIntyre PC, Tani N, Tanimura M. Microstructure of (Ba, Sr)TiO3 thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric properties Applied Physics Letters. 77: 1209-1211. DOI: 10.1063/1.1288155 |
0.486 |
|
| 1998 |
McIntyre PC, Maggiore CJ, Nastasi M. Interpretation of ion channeling results from epitaxial Pt thin films and multilayers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 214-219. DOI: 10.1016/S0168-583X(97)00682-4 |
0.351 |
|
| 1997 |
Hadad D, Chen T, Balu V, Jiang B, Kuah SH, McIntyre P, Summerfelt S, Mark Anthony J, Lee JC. The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors Integrated Ferroelectrics. 17: 461-469. DOI: 10.1080/10584589708013020 |
0.372 |
|
| 1997 |
McIntyre PC, Summerfelt SR. Kinetics and mechanisms of TiN oxidation beneath Pt thin films Journal of Applied Physics. 82: 4577-4585. DOI: 10.1063/1.366194 |
0.408 |
|
| 1997 |
McIntyre PC, Wu DT, Nastasi M. Interdiffusion in epitaxial Co/Pt multilayers Journal of Applied Physics. 81: 637-645. DOI: 10.1063/1.364221 |
0.36 |
|
| 1997 |
McIntyre PC, Summerfelt SR, Maggiore CJ. Oxidation kinetics of TiN layers: Exposed and beneath Pt thin films Applied Physics Letters. 70: 711-713. DOI: 10.1063/1.118247 |
0.42 |
|
| 1997 |
McIntyre P, Maggiore C, Nastasi M. Epitaxy of Pt thin films on (001) MgO—II: Orientation evolution from nucleation through coalescence Acta Materialia. 45: 879-887. DOI: 10.1016/S1359-6454(96)00183-8 |
0.45 |
|
| 1997 |
McIntyre PC, Maggiore CJ, Nastasi M. Epitaxy of Pt thin films on (001) MgO—I. Interface energetics and misfit accommodation Acta Materialia. 45: 869-878. DOI: 10.1016/S1359-6454(96)00182-6 |
0.454 |
|
| 1996 |
Basceri C, Streiffer S, Kingon A, Bilodeau S, Carl R, Buskirk PV, Summerfelt S, Mcintyre P, Waser R. Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films Mrs Proceedings. 433. DOI: 10.1557/Proc-433-285 |
0.403 |
|
| 1996 |
McIntyre PC, Ressler KG, Sonnenberg N, Cima MJ. Transmission electron microscopy investigation of biaxial alignment development in YSZ films fabricated using ion beam assisted deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 14: 210-215. DOI: 10.1116/1.579921 |
0.432 |
|
| 1995 |
Yu N, Mcintyre PC, Nastasi M, Sickafus KE. High-quality epitaxial growth of gamma -alumina films on alpha -alumina sapphire induced by ion-beam bombardment. Physical Review B. 52: 17518-17522. PMID 9981183 DOI: 10.1103/Physrevb.52.17518 |
0.362 |
|
| 1995 |
Liebenberg DH, Soulen RJ, Francavilla TL, Fuller-Mora WW, McIntyre PC, Cima MJ. Current-Voltage Measurements Of Thin Yba2Cu3O6.9 Films Compared With A Modified Ambegaokar-Halperin Theory Physical Review B. 51: 11838-11847. PMID 9977926 DOI: 10.1103/Physrevb.51.11838 |
0.352 |
|
| 1995 |
Nashimoto K, Cima MJ, McIntyre PC, Rhine WE. Microstructure development of sol-gel derived epitaxial LiNbO3 thin films Journal of Materials Research. 10: 2564-2572. DOI: 10.1557/Jmr.1995.2564 |
0.473 |
|
| 1995 |
Yu N, Wen Q, Clarke DR, McIntyre PC, Kung H, Nastasi M, Simpson TW, Mitchell IV, Li D. Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates Journal of Applied Physics. 78: 5412-5421. DOI: 10.1063/1.359722 |
0.447 |
|
| 1995 |
McIntyre PC, Cima MJ, Roshko A. Epitaxial nucleation and growth of chemically derived Ba 2YCu3O7-x thin films on (001) SrTiO3 Journal of Applied Physics. 77: 5263-5272. DOI: 10.1063/1.359278 |
0.48 |
|
| 1995 |
McIntyre PC, Maggiore CJ, Nastasi M. Orientation selection in thin platinum films on (001) MgO Journal of Applied Physics. 77: 6201-6204. DOI: 10.1063/1.359147 |
0.446 |
|
| 1995 |
Yu N, Simpson TW, McIntyre PC, Nastasi M, Mitchell IV. Doping effects on the kinetics of solid‐phase epitaxial growth of amorphous alumina thin films on sapphire Applied Physics Letters. 67: 924-926. DOI: 10.1063/1.114696 |
0.446 |
|
| 1995 |
McIntyre PC, Cima MJ, Roshko A. The effects of substrate surface steps on the microstructure of epitaxial Ba2YCu3O7-x thin films on (001) LaAlO3 Journal of Crystal Growth. 149: 64-73. DOI: 10.1016/0022-0248(95)00003-8 |
0.442 |
|
| 1995 |
McIntyre PC, Chang BP, Sonnenberg N, Cima MJ. Defect formation in epitaxial oxide dielectric layers due to substrate surface relief Journal of Electronic Materials. 24: 735-745. DOI: 10.1007/Bf02659733 |
0.448 |
|
| 1994 |
McIntyre PC, Maggiore CJ, Nastasi M. Orientation Selection and Microstructural Evolution of Epitaxial Pt Films on (001) MgO Mrs Proceedings. 355. DOI: 10.1557/Proc-355-335 |
0.455 |
|
| 1994 |
Sonnenberg N, Ressler KG, Mcintyre PC, Cima MJ. The Influence of Processing Parameters on the Development of Biaxially Aligned Zirconia Thin Films Deposited by Ion Beam Assisted Deposition Mrs Proceedings. 341. DOI: 10.1557/Proc-341-163 |
0.44 |
|
| 1994 |
Chang BP, Mcintyre PC, Sonnenberg N, Cima MJ. Epitaxial Dielectric Planarization for Multilayer HTSC Structures Mrs Proceedings. 341. DOI: 10.1557/Proc-341-151 |
0.444 |
|
| 1994 |
McIntyre P, Cima M. Microstructural inhomogeneities in chemically derived Ba2YCu3O7−x thin films: Implications for flux pinning Journal of Materials Research. 9: 2778-2788. DOI: 10.1557/Jmr.1994.2778 |
0.393 |
|
| 1994 |
McIntyre PC, Cima MJ. Heteroepitaxial growth of chemically derived ex situ Ba2YCu3O7−x thin films Journal of Materials Research. 9: 2219-2230. DOI: 10.1557/Jmr.1994.2219 |
0.472 |
|
| 1994 |
Liebenberg DH, Cima MJ, McIntyre PC, Francavilla TL. Angular dependence of transport current near critical at fields to 4 T in metalorganic thin films Journal of Superconductivity. 7: 303-308. DOI: 10.1007/Bf00724558 |
0.356 |
|
| 1993 |
Chang BP, Sonnenberg N, McIntyre PC, Cima MJ, Sun JZ, Yu-Jahnes LS. Epitaxial Planarization Using Ion Beam Assisted Deposition Mrs Proceedings. 316. DOI: 10.1557/Proc-316-887 |
0.353 |
|
| 1993 |
Sonnenberg N, Longo AS, Cima MJ, Chang BP, Ressler KG, McIntyre PC, Liu YP. Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion‐beam assisted deposition Journal of Applied Physics. 74: 1027-1034. DOI: 10.1063/1.354949 |
0.424 |
|
| 1993 |
Westerheim AC, Mcintyre PC, Basu SN, Bhatt D, Yu-Jahnes LS, Anderson AC, Cima MJ. Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa2Cu3O7−x thin films Journal of Electronic Materials. 22: 1113-1120. DOI: 10.1007/Bf02817534 |
0.445 |
|
| 1992 |
McIntyre PC, Cima MJ, Smith JA, Hallock RB, Siegal MP, Phillips JM. Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7- x on (001) LaAlO3 Journal of Applied Physics. 71: 1868-1877. DOI: 10.1063/1.351172 |
0.463 |
|
| 1992 |
Liebenberg D, McIntyre P, Clima M, Francavilla T. Angular dependence of critical currents of high temperature superconducting films in high magnetic fields prepared by metalorganic deposition Cryogenics. 32: 1066-1070. DOI: 10.1016/0011-2275(92)90029-A |
0.367 |
|
| 1991 |
McIntyre PC, Cima MJ, Liebenberg DH, Francavilla TL. Mixed‐state behavior in large magnetic fields of high‐temperature superconducting films prepared by metalorganic deposition Applied Physics Letters. 58: 2033-2035. DOI: 10.1063/1.105004 |
0.327 |
|
| 1990 |
McIntyre PC, Cima MJ, Fai Ng M, Chiu RC, Rhine WE. Texture development in Ba2YCu3O7−x films from trifluoroacetate precursors Journal of Materials Research. 5: 2771-2779. DOI: 10.1557/Jmr.1990.2771 |
0.369 |
|
| 1990 |
McIntyre PC, Cima MJ, Ng MF. Metalorganic deposition of high‐JcBa2YCu3O7−xthin films from trifluoroacetate precursors onto (100) SrTiO3 Journal of Applied Physics. 68: 4183-4187. DOI: 10.1063/1.346233 |
0.448 |
|
| 1989 |
Mcintyre PC, Chiu RC, Cima MJ, Rhine WE. Metal‐Organic Decomposition and Microstructure Development in Ba2ycu3o7‐X Films from Metal Trifluoroacetate Precursors Mrs Proceedings. 169. DOI: 10.1557/Proc-169-743 |
0.405 |
|
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