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Jingyu Lin - Publications

Affiliations: 
1992-2008 Department of Physics Kansas State University, Manhattan, KS, United States 
 2008- Texas Tech University, Lubbock, TX 
Area:
Condensed Matter Physics
Website:
http://www.depts.ttu.edu/ece/faculty/faculty.php?name=Jingyu Lin
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42 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Yan Y, Sun Z, Zhao W, Li J, Lin J, Jiang H. Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides Applied Physics Express. 12: 75505-75505. DOI: 10.7567/1882-0786/Ab2730  0.627
2019 Maity A, Grenadier SJ, Li J, Lin J, Jiang H. Effects of surface recombination on the charge collection in h-BN neutron detectors Journal of Applied Physics. 125: 104501. DOI: 10.1063/1.5089138  0.566
2018 Wang Q, Uddin R, Du X, Li J, Lin J, Jiang H. Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells Applied Physics Express. 12: 011002. DOI: 10.7567/1882-0786/Aaee8D  0.645
2017 Yang J, Ren F, Khanna R, Bevlin K, Geerpuram D, Tung L, Lin J, Jiang H, Lee J, Flitsiyan E, Chernyak L, Pearton SJ, Kuramata A. Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201. DOI: 10.1116/1.4986300  0.609
2017 Liu S, He R, Ye Z, Du X, Lin J, Jiang H, Liu B, Edgar JH. Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux Crystal Growth & Design. 17: 4932-4935. DOI: 10.1021/Acs.Cgd.7B00871  0.582
2017 Butler S, Jiang H, Lin J, Neogi A. Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity Advanced Optical Materials. 5: 1600804. DOI: 10.1002/Adom.201600804  0.593
2016 Sun ZY, Li J, Zhao WP, Lin JY, Jiang HX. Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers Applied Physics Letters. 109. DOI: 10.1063/1.4960360  0.313
2015 Al Tahtamouni TM, Du X, Lin J, Jiang H. Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 648-654. DOI: 10.1364/OME.5.000648  0.606
2015 Jeon DW, Sun Z, Li J, Lin J, Jiang H. Erbium doped GaN synthesized by hydride vapor-phase epitaxy Optical Materials Express. 5: 596-602. DOI: 10.1364/Ome.5.000596  0.661
2015 Al Tahtamouni TM, Du X, Li J, Lin J, Jiang H. Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 274-280. DOI: 10.1364/Ome.5.000274  0.644
2015 Jiang H, Lin J. (Invited) InGaN/GaN Multiple Quantum Well Solar Cells for Energy and Hydrogen Generation Ecs Transactions. 66: 129-134. DOI: 10.1149/06601.0129ECST  0.527
2015 Seo J, Li J, Lee J, Gong S, Lin J, Jiang H, Ma Z. A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate Ieee Photonics Journal. 7: 1-7. DOI: 10.1109/Jphot.2015.2412459  0.601
2015 Connie AT, Zhao S, Sadaf SM, Shih I, Mi Z, Du X, Lin J, Jiang H. Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4921626  0.625
2014 Tang L, Ji R, Li X, Bai G, Liu CP, Hao J, Lin J, Jiang H, Teng KS, Yang Z, Lau SP. Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots. Acs Nano. 8: 6312-20. PMID 24848545 DOI: 10.1021/Nn501796R  0.647
2013 Feng IW, Zhao W, Li J, Lin J, Jiang H, Zavada J. Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides. Applied Optics. 52: 5426-9. PMID 23913061 DOI: 10.1364/Ao.52.005426  0.662
2013 Feng IW, Li J, Lin J, Jiang H, Zavada J. Optical excitation cross section of erbium in GaN. Applied Optics. 52: 1132-5. PMID 23434981 DOI: 10.1364/Ao.52.001132  0.612
2013 Grenadier S, Li J, Lin J, Jiang H. Dry etching techniques for active devices based on hexagonal boron nitride epilayers Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061517. DOI: 10.1116/1.4826363  0.608
2013 Feng I, Jin S, Li J, Lin J, Jiang H. SiO2/TiO2distributed Bragg reflector near 1.5μm fabricated by e-beam evaporation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061514. DOI: 10.1116/1.4823705  0.628
2012 Tang L, Ji R, Cao X, Lin J, Jiang H, Li X, Teng KS, Luk CM, Zeng S, Hao J, Lau SP. Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. Acs Nano. 6: 5102-10. PMID 22559247 DOI: 10.1021/Nn300760G  0.626
2012 Aryal K, Feng IW, Pantha BN, Li J, Lin JY, Jiang HX. Thermoelectric properties of Er-doped InGaN alloys for high temperature applications Materials Research Society Symposium Proceedings. 1325: 41-46. DOI: 10.1557/Opl.2011.849  0.756
2012 Feng I, Li J, Lin J, Jiang H, Zavada J. Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition Optical Materials Express. 2: 1095. DOI: 10.1364/OME.2.001095  0.562
2012 Majety S, Cao XK, Dahal R, Pantha BN, Li J, Lin JY, Jiang HX. Semiconducting hexagonal boron nitride for deep ultraviolet photonics Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.914084  0.754
2012 Pantha BN, Lin JY, Jiang HX. High-Quality Al-Rich AlGaN alloys Springer Series in Materials Science. 156: 29-81. DOI: 10.1007/978-3-642-23521-4_2  0.734
2012 Nakarmi ML, Cai B, Lin JY, Jiang HX. Three-step growth method for high quality AlN epilayers Physica Status Solidi (a) Applications and Materials Science. 209: 126-129. DOI: 10.1002/Pssa.201127475  0.632
2011 Pantha BN, Feng IW, Aryal K, Li J, Lin JY, Jiang HX. Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials Applied Physics Express. 4. DOI: 10.1143/Apex.4.051001  0.773
2011 Dahal R, Li J, Majety S, Pantha BN, Cao XK, Lin JY, Jiang HX. Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material Applied Physics Letters. 98. DOI: 10.1063/1.3593958  0.751
2010 Pantha BN, Li J, Lin JY, Jiang HX. Evolution of phase separation in In-rich InGaN alloys Applied Physics Letters. 96. DOI: 10.1063/1.3453563  0.727
2010 Aryal K, Pantha BN, Li J, Lin JY, Jiang HX. Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells Applied Physics Letters. 96. DOI: 10.1063/1.3304786  0.719
2009 Pantha BN, Sedhain A, Li J, Lin JY, Jiang HX. Electrical and optical properties of p-type InGaN Applied Physics Letters. 95. DOI: 10.1063/1.3279149  0.752
2009 Sedhain A, Du L, Edgar JH, Lin JY, Jiang HX. The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates Applied Physics Letters. 95. DOI: 10.1063/1.3276567  0.301
2009 Nikishin S, Borisov B, Pandikunta M, Dahal R, Lin JY, Jiang HX, Harris H, Holtz M. High quality AlN for deep UV photodetectors Applied Physics Letters. 95. DOI: 10.1063/1.3200229  0.629
2009 Dahal R, Pantha B, Li J, Lin JY, Jiang HX. InGaN/GaN multiple quantum well solar cells with long operating wavelengths Applied Physics Letters. 94. DOI: 10.1063/1.3081123  0.731
2009 Pantha BN, Dahal R, Li J, Lin JY, Jiang HX, Pomrenke G. Thermoelectric properties of In 0.3Ga 0.7N alloys Journal of Electronic Materials. 38: 1132-1135. DOI: 10.1007/s11664-009-0676-8  0.743
2008 Khan N, Sedhain A, Li J, Lin JY, Jiang HX. High mobility InN epilayers grown on AlN epilayer templates Applied Physics Letters. 92. DOI: 10.1063/1.2917473  0.3
2008 Sedhain A, Lin JY, Jiang HX. Valence band structure of AlN probed by photoluminescence Applied Physics Letters. 92. DOI: 10.1063/1.2840176  0.608
2008 Liu J, Li J, Sedhain A, Lin J, Jiang H. Structure and photoluminescence study of TiO2 nanoneedle texture along vertically aligned carbon nanofiber arrays Journal of Physical Chemistry C. 112: 17127-17132. DOI: 10.1021/Jp8060653  0.601
2006 tahtamouni TMAA, Nepal N, Lin J, Jiang H. Al rich AlN/AlGaN Quantum Wells Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I02-04  0.561
2005 Hui R, Wan Y, Li J, Jin S, Lin J, Jiang H. III-nitride-based planar lightwave circuits for long wavelength optical communications Ieee Journal of Quantum Electronics. 41: 100-110. DOI: 10.1109/Jqe.2004.838169  0.639
2002 Dai L, Zhang B, Wang RP, Lin J, Jiang H. Optical resonant modes in InGaN MQW/GaN micro-cone☆ Current Applied Physics. 2: 383-387. DOI: 10.1016/S1567-1739(02)00145-1  0.617
2001 Jiang HX, Jin SX, Li J, Shakya J, Lin JY. III-nitride blue microdisplays Applied Physics Letters. 78: 1303-1305. DOI: 10.1063/1.1351521  0.75
2001 Jiang H, Lin J. Advances in III-nitride micro-size light emitters Iii-Vs Review. 14: 32-37. DOI: 10.1016/S0961-1290(01)80261-1  0.603
2000 Oder TN, Li J, Lin J, Jiang H. Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G10.7  0.564
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