☰

Bed N. Pantha, Ph.D. - Publications

Affiliations: 
2009 Department of Physics Kansas State University, Manhattan, KS, United States 
Area:
Condensed Matter Physics
Tree Info Similar researchers PubMed Report error

21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Dahal R, Pantha BN, Li J, Lin JY, Jiang HX. Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis Applied Physics Letters. 104. DOI: 10.1063/1.4871105  0.369
2013 Tong T, Fu D, Levander AX, Schaff WJ, Pantha BN, Lu N, Liu B, Ferguson I, Zhang R, Lin JY, Jiang HX, Wu J, Cahill DG. Suppression of thermal conductivity in InxGa1-xN alloys by nanometer-scale disorder Applied Physics Letters. 102. DOI: 10.1063/1.4798838  0.368
2012 Aryal K, Feng IW, Pantha BN, Li J, Lin JY, Jiang HX. Thermoelectric properties of Er-doped InGaN alloys for high temperature applications Materials Research Society Symposium Proceedings. 1325: 41-46. DOI: 10.1557/Opl.2011.849  0.653
2012 Majety S, Cao XK, Dahal R, Pantha BN, Li J, Lin JY, Jiang HX. Semiconducting hexagonal boron nitride for deep ultraviolet photonics Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.914084  0.619
2012 Majety S, Li J, Cao XK, Dahal R, Pantha BN, Lin JY, Jiang HX. Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics Applied Physics Letters. 100. DOI: 10.1063/1.3682523  0.475
2012 Pantha BN, Lin JY, Jiang HX. High-Quality Al-Rich AlGaN alloys Springer Series in Materials Science. 156: 29-81. DOI: 10.1007/978-3-642-23521-4_2  0.585
2011 Pantha BN, Feng IW, Aryal K, Li J, Lin JY, Jiang HX. Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials Applied Physics Express. 4. DOI: 10.1143/Apex.4.051001  0.644
2011 Pantha BN, Wang H, Khan N, Lin JY, Jiang HX. Origin of background electron concentration in InxGa 1-xN alloys Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075327  0.32
2011 Dahal R, Li J, Majety S, Pantha BN, Cao XK, Lin JY, Jiang HX. Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material Applied Physics Letters. 98. DOI: 10.1063/1.3593958  0.624
2010 Pantha BN, Sedhain A, Li J, Lin JY, Jiang HX. Achieving p-InxGa1-xN alloys with high in contents Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842313  0.463
2010 Pantha BN, Lin JY, Jiang HX. III-Nitride nanostructures for energy generation Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.840726  0.384
2010 Pantha BN, Li J, Lin JY, Jiang HX. Evolution of phase separation in In-rich InGaN alloys Applied Physics Letters. 96. DOI: 10.1063/1.3453563  0.606
2010 Pantha BN, Sedhain A, Li J, Lin JY, Jiang HX. Probing the relationship between structural and optical properties of Si-doped AlN Applied Physics Letters. 96. DOI: 10.1063/1.3374444  0.429
2010 Aryal K, Pantha BN, Li J, Lin JY, Jiang HX. Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells Applied Physics Letters. 96. DOI: 10.1063/1.3304786  0.599
2009 Pantha BN, Sedhain A, Li J, Lin JY, Jiang HX. Electrical and optical properties of p-type InGaN Applied Physics Letters. 95. DOI: 10.1063/1.3279149  0.648
2009 Dahal R, Pantha B, Li J, Lin JY, Jiang HX. InGaN/GaN multiple quantum well solar cells with long operating wavelengths Applied Physics Letters. 94. DOI: 10.1063/1.3081123  0.562
2009 Pantha BN, Dahal R, Li J, Lin JY, Jiang HX, Pomrenke G. Thermoelectric properties of In 0.3Ga 0.7N alloys Journal of Electronic Materials. 38: 1132-1135. DOI: 10.1007/s11664-009-0676-8  0.63
2008 Pantha BN, Li J, Lin JY, Jiang HX. Single phase Inx Ga1-x N (0.25x0.63) alloys synthesized by metal organic chemical vapor deposition Applied Physics Letters. 93. DOI: 10.1063/1.3006432  0.463
2008 Pantha BN, Dahal R, Li J, Lin JY, Jiang HX, Pomrenke G. Thermoelectric properties of Inx Ga1-x N alloys Applied Physics Letters. 92. DOI: 10.1063/1.2839309  0.502
2007 Pantha BN, Nepal N, Al Tahtamouni TM, Nakarmi ML, Li J, Lin JY, Jiang HX. Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91. DOI: 10.1063/1.2789182  0.303
2007 Pantha BN, Dahal R, Nakarmi ML, Nepal N, Li J, Lin JY, Jiang HX, Paduano QS, Weyburne D. Correlation between optoelectronic and structural properties and epilayer thickness of AlN Applied Physics Letters. 90. DOI: 10.1063/1.2747662  0.393
Show low-probability matches.