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Kelly P. Ip, Ph.D. - Publications

Affiliations: 
2005 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering
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45 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T. Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340] Progress in Materials Science. 100669. DOI: 10.1016/J.Pmatsci.2020.100669  0.355
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, ... Ip K, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090  0.715
2006 Norton DP, Ivill M, Li Y, Kwon YW, Erie JM, Kim HS, Ip K, Pearton SJ, Heo YW, Kim S, Kang BS, Ren F, Hebard AF, Kelly J. Charge carrier and spin doping in ZnO thin films Thin Solid Films. 496: 160-168. DOI: 10.1016/J.Tsf.2005.08.246  0.48
2006 Ip K, Thaler G, Yang H, Youn Han S, Li Y, Norton D, Pearton S, Jang S, Ren F. Contacts to ZnO Journal of Crystal Growth. 287: 149-156. DOI: 10.1016/J.Jcrysgro.2005.10.059  0.565
2006 Heo Y, Ip K, Pearton S, Norton D, Budai J. Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source Applied Surface Science. 252: 7442-7448. DOI: 10.1016/J.Apsusc.2005.08.094  0.506
2006 Li YJ, Heo YW, Erie JM, Kim H, Ip K, Pearton SJ, Norton DP. Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Journal of Electronic Materials. 35: 530-537. DOI: 10.1007/S11664-006-0095-Z  0.538
2005 Ip K, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko I, Kao CJ, Chi GC. Improved thermal stability CrB2 contacts on ZnO Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7291-7295. DOI: 10.1143/Jjap.44.7291  0.469
2005 Li YJ, Heo YW, Erie JM, Kim HS, Ip K, Pearton SJ, Norton DP. Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Proceedings of Spie. 5941: 366. DOI: 10.1117/12.615015  0.535
2005 Ip K, Li Y, Norton DP, Pearton SJ, Ren F. Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO Applied Physics Letters. 87: 071906. DOI: 10.1063/1.2012518  0.541
2005 Li YJ, Heo YW, Kwon Y, Ip K, Pearton SJ, Norton DP. Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition Applied Physics Letters. 87: 072101. DOI: 10.1063/1.2010600  0.522
2005 Yang HS, Li Y, Norton DP, Ip K, Pearton SJ, Jang S, Ren F. Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition Applied Physics Letters. 86: 192103. DOI: 10.1063/1.1925309  0.556
2005 Lopatiuk O, Burdett W, Chernyak L, Ip KP, Heo YW, Norton DP, Pearton SJ, Hertog B, Chow PP, Osinsky A. Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus Applied Physics Letters. 86: 012105. DOI: 10.1063/1.1844037  0.444
2005 Ip K, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko I, Kao CJ, Chi GC. Thermal stability of W2B and W2B5 contacts on ZnO Applied Surface Science. 252: 1846-1853. DOI: 10.1016/J.Apsusc.2005.03.133  0.444
2005 Khanna R, Ip K, Allums KK, Baik K, Abernathy CR, Pearton SJ, Heo YW, Norton DP, Ren F, Shojah-Ardalan S, Wilkins R. Proton irradiation of ZnO schottky diodes Journal of Electronic Materials. 34: 395-398. DOI: 10.1007/S11664-005-0117-2  0.467
2005 Kang B, Kim S, Ren F, Ip K, Heo Y, Gila B, Abernathy C, Norton D, Pearton S. Detection of CO using bulk ZnO Schottky rectifiers Applied Physics A. 80: 259-261. DOI: 10.1007/S00339-004-2666-2  0.464
2004 Ip K, Gila B, Onstine A, Lambers E, Heo Y, Norton D, Pearton S, LaRoche J, Ren F. Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO. Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B10.1  0.592
2004 Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ. Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors Journal of the Electrochemical Society. 151: G468. DOI: 10.1149/1.1758817  0.523
2004 Kim S, Kang BS, Ren F, Heo YW, Ip K, Norton DP, Pearton SJ. Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates Electrochemical and Solid-State Letters. 7: G145. DOI: 10.1149/1.1738554  0.56
2004 Khanna R, Ip K, Heo YW, Norton DP, Pearton SJ, Ren F. Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces Applied Physics Letters. 85: 3468-3470. DOI: 10.1063/1.1801674  0.566
2004 Ip K, Heo YW, Norton DP, Pearton SJ, LaRoche JR, Ren F. Zn0.9Mg0.1O∕ZnOp–n junctions grown by pulsed-laser deposition Applied Physics Letters. 85: 1169-1171. DOI: 10.1063/1.1783015  0.533
2004 Ip K, Gila BP, Onstine AH, Lambers ES, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning Applied Physics Letters. 84: 5133-5135. DOI: 10.1063/1.1764940  0.702
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO Applied Physics Letters. 84: 2835-2837. DOI: 10.1063/1.1705726  0.702
2004 Heo YW, Ivill MP, Ip K, Norton DP, Pearton SJ, Kelly JG, Rairigh R, Hebard AF, Steiner T. Effects of high-dose Mn implantation into ZnO grown on sapphire Applied Physics Letters. 84: 2292-2294. DOI: 10.1063/1.1690111  0.551
2004 Kim S, Kang BS, Ren F, Heo YW, Ip K, Norton DP, Pearton SJ. Contacts to p-type ZnMgO Applied Physics Letters. 84: 1904-1906. DOI: 10.1063/1.1669082  0.584
2004 Kim S, Kang BS, Ren F, Ip K, Heo YW, Norton DP, Pearton SJ. Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen Applied Physics Letters. 84: 1698-1700. DOI: 10.1063/1.1664012  0.523
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F. Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO Applied Physics Letters. 84: 544-546. DOI: 10.1063/1.1644318  0.705
2004 Norton D, Heo Y, Ivill M, Ip K, Pearton S, Chisholm M, Steiner T. ZnO: growth, doping & processing Materials Today. 7: 34-40. DOI: 10.1016/S1369-7021(04)00287-1  0.46
2004 Polyakov A, Govorkov A, Smirnov N, Pashkova N, Pearton S, Ip K, Frazier R, Abernathy C, Norton D, Zavada J, Wilson R. Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe Materials Science in Semiconductor Processing. 7: 77-81. DOI: 10.1016/J.Mssp.2004.03.001  0.438
2004 Ip K, Gila B, Onstine A, Lambers E, Heo Y, Baik K, Norton D, Pearton S, Kim S, LaRoche J, Ren F. Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO Applied Surface Science. 236: 387-393. DOI: 10.1016/J.Apsusc.2004.05.013  0.705
2004 Heo Y, Ip K, Park S, Pearton S, Norton D. Shallow donor formation in phosphorus-doped ZnO thin films Applied Physics A. 78: 53-57. DOI: 10.1007/S00339-003-2243-0  0.55
2004 Khanna R, Ip K, Allums KK, Baik K, Abernathy CR, Pearton SJ, Heo YW, Norton DP, Ren F, Dwivedi R, Fogarty TN, Wilkins R. Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes Physica Status Solidi (a). 201: R79-R82. DOI: 10.1002/Pssa.200409059  0.62
2004 Heo YW, Ip K, Pearton SJ, Norton DP. The near band-edge emission and photoconductivity response of phosphorus-doped ZnO thin films grown by pulsed laser deposition Physica Status Solidi (a). 201: 1500-1509. DOI: 10.1002/Pssa.200306792  0.531
2003 Ip K, Nigam S, Baik KH, Ren F, Chung GY, Gila BP, Pearton SJ. Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing Journal of the Electrochemical Society. 150: G293. DOI: 10.1149/1.1560953  0.676
2003 Polyakov AY, Smirnov NB, Kozhukhova EA, Vdovin VI, Ip K, Norton DP, Pearton SJ. Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 21: 1603-1608. DOI: 10.1116/1.1589530  0.518
2003 Polyakov AY, Smirnov NB, Kozhukhova EA, Vdovin VI, Ip K, Heo YW, Norton DP, Pearton SJ. Electrical characteristics of Au and Ag Schottky contacts on n-ZnO Applied Physics Letters. 83: 1575-1577. DOI: 10.1063/1.1604173  0.563
2003 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Vdovin VI, Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Zavada JM, Dravin VA. Proton implantation effects on electrical and recombination properties of undoped ZnO Journal of Applied Physics. 94: 2895-2900. DOI: 10.1063/1.1597944  0.464
2003 Heo YW, Park SJ, Ip K, Pearton SJ, Norton DP. Transport properties of phosphorus-doped ZnO thin films Applied Physics Letters. 83: 1128-1130. DOI: 10.1063/1.1594835  0.539
2003 Polyakov AY, Smirnov NB, Govorkov AV, Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Luo B, Ren F, Zavada JM. Hydrogen plasma treatment effects on electrical and optical properties ofn-ZnO Journal of Applied Physics. 94: 400-406. DOI: 10.1063/1.1579114  0.44
2003 Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Stutz CE, Luo B, Ren F, Look DC, Zavada JM. Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO Applied Physics Letters. 82: 385-387. DOI: 10.1063/1.1539927  0.459
2003 Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S. ICP dry etching of ZnO and effects of hydrogen Solid-State Electronics. 47: 2289-2294. DOI: 10.1016/S0038-1101(03)00211-9  0.47
2003 Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J. Hydrogen incorporation, diffusivity and evolution in bulk ZnO Solid-State Electronics. 47: 2255-2259. DOI: 10.1016/S0038-1101(03)00207-7  0.478
2003 Pearton S, Norton D, Ip K, Heo Y, Steiner T. Recent progress in processing and properties of ZnO Superlattices and Microstructures. 34: 3-32. DOI: 10.1016/J.Pmatsci.2004.04.001  0.464
2002 Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Kucheyev SO, Jagadish C, Williams JS, Wilson RG, Zavada JM. Thermal stability of ion-implanted hydrogen in ZnO Applied Physics Letters. 81: 3996-3998. DOI: 10.1063/1.1524033  0.479
2002 Ip K, Baik KH, Overberg ME, Lambers ES, Heo YW, Norton DP, Pearton SJ, Ren F, Zavada JM. Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO Applied Physics Letters. 81: 3546-3548. DOI: 10.1063/1.1519095  0.608
2001 Dang G, Cho H, Ip KP, Pearton SJ, Chu SNG, Lopata J, Hobson WS, Chirovsky LMF, Ren F. Comparison of Dry and Wet Etch Processes for Patterning SiO[sub 2]/TiO[sub 2] Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers Journal of the Electrochemical Society. 148: G25. DOI: 10.1149/1.1337606  0.458
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