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Wantae Lim, Ph.D. - Publications

Affiliations: 
2009 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Chemical Engineering
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72 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Baik KH, Lim W, Pearton S, Wang Y, Ren F, Yang J, Jang S. a-Plane GaN for Hydrogen Sensing Applications Ecs Transactions. 28: 89-93. DOI: 10.1149/1.3377104  0.553
2019 Lim W, Wang Y, Lee J, Norton DP, Ren F, Pearton SJ. High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature Ecs Transactions. 16: 303-308. DOI: 10.1149/1.2980567  0.423
2019 Lim W, Stafford L, Gila B, Norton D, Pearton S, Ren F, Song J, Park J, Heo Y, Lee J, Kim J. High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) Ecs Transactions. 6: 239-247. DOI: 10.1149/1.2731191  0.32
2016 Leem YC, Seo O, Jo YR, Kim JH, Chun J, Kim BJ, Noh DY, Lim W, Kim YI, Park SJ. Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes. Nanoscale. PMID 27121775 DOI: 10.1039/C6Nr00503A  0.32
2016 Leem YC, Park JS, Kim JH, Myoung N, Yim SY, Jeong S, Lim W, Kim ST, Park SJ. Light-Emitting Diodes: Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect (Small 2/2016). Small (Weinheim An Der Bergstrasse, Germany). 12: 138. PMID 26748797 DOI: 10.1002/Smll.201670006  0.31
2016 Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027  0.491
2014 Leem YC, Kim NY, Lim W, Kim ST, Park SJ. Enhanced optical output power of InGaN/GaN vertical light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN. Nanoscale. 6: 10187-92. PMID 25046799 DOI: 10.1039/C4Nr01503G  0.346
2013 Cho C, Kim N, Kang J, Leem Y, Hong S, Lim W, Kim S, Park S. Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO2-Coated ZnO Nanorod Arrays Applied Physics Express. 6: 42102. DOI: 10.7567/Apex.6.042102  0.339
2013 Song J, Leem Y, Park Y, Lee H, Lim W, Kim S, Jung G, Park S. Light extraction efficiency of GaN-based LEDs with non-periodic and periodic sub-wavelength structures Journal of the Korean Physical Society. 62: 770-774. DOI: 10.3938/Jkps.62.770  0.335
2013 Lim W, Sung Y, Kim S, Shin Y, Jang T, Park T, Kim G, Song S, Lee W, Kim Y, Kim S, Pearton SJ. Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 010602. DOI: 10.1116/1.4773006  0.477
2013 Cho C, Choe M, Lee S, Hong S, Lee T, Lim W, Kim S, Park S. Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene Journal of Applied Physics. 113: 113102. DOI: 10.1063/1.4795502  0.391
2012 Pearton SJ, Lim WT, Douglas E, Cho H, Ren F. Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors Key Engineering Materials. 521: 141-151. DOI: 10.4028/Www.Scientific.Net/Kem.521.141  0.716
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Yu S, Karpov, Shcherbachev KD, Lim W. Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.019203Jss  0.444
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Liu L, Johnson JW, Lim W, Kolin NG, Veryovkin SS, Ermakov VS. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4766727  0.475
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Karpov SY, Shcherbachev KD, Kolin NG, Lim W. Metastable centers in AlGaN/AlN/GaN heterostructures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 41209. DOI: 10.1116/1.4731256  0.475
2012 Kim H, Lim W, Lee J, Pearton S, Ren F, Jang S. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks Sensors and Actuators B: Chemical. 164: 64-68. DOI: 10.1016/J.Snb.2012.01.067  0.483
2011 Lim W, Jeong J, Lee H, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Hur W, Kim ST, Pearton SJ. Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications Electrochemical and Solid State Letters. 14. DOI: 10.1149/1.3555069  0.396
2010 Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467  0.499
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Improvement in bias stability of amorphous- InGaZn O4 thin film transistors with Si Ox passivation layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 28: 116-119. DOI: 10.1116/1.3276774  0.693
2010 Wright JS, Lim W, Norton DP, Pearton SJ, Ren F, Johnson JL, Ural A. Nitride and oxide semiconductor nanostructured hydrogen gas sensors Semiconductor Science and Technology. 25: 024002. DOI: 10.1088/0268-1242/25/2/024002  0.496
2010 Baik KH, Seo YG, Kim J, Hwang S, Lim W, Chang CY, Pearton SJ, Ren F, Jang S. Ohmic contact properties of non-polara-plane GaN films onr-plane sapphire substrates Journal of Physics D: Applied Physics. 43: 295102. DOI: 10.1088/0022-3727/43/29/295102  0.64
2010 Lim W, Jeong J, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Yang J, Pearton SJ. Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes Applied Physics Letters. 97: 242103. DOI: 10.1063/1.3525931  0.488
2010 Sung SY, Choi JH, Han UB, Lee KC, Lee JH, Kim JJ, Lim W, Pearton SJ, Norton DP, Heo YW. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors Applied Physics Letters. 96. DOI: 10.1063/1.3357431  0.528
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753  0.735
2010 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J, Norton DP. Recent advances in wide bandgap semiconductor biological and gas sensors Progress in Materials Science. 55: 1-59. DOI: 10.1016/J.Pmatsci.2009.08.003  0.448
2010 Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034  0.624
2009 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J. Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-01  0.448
2009 Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787  0.726
2009 Wright JS, Lim W, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Pd-catalyzed hydrogen sensing with InN nanobelts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L8. DOI: 10.1116/1.3125267  0.432
2009 Lim W, Jang JH, Kim S-, Norton DP, Craciun V, Pearton SJ, Ren F, Chen H. Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 27: 126-129. DOI: 10.1116/1.3058717  0.461
2009 Lin Y, Flitsyian E, Chernyak L, Malinauskas T, Aleksiejunas R, Jarasiunas K, Lim W, Pearton SJ, Gartsman K. Optical and electron beam studies of carrier transport in quasibulk GaN Applied Physics Letters. 95: 092101. DOI: 10.1063/1.3220062  0.338
2009 Jang JH, Son SY, Lim W, Phen MS, Siebein K, Pearton SJ, Craciun V. Fabrication of compositional graded Si1−xGex layers by using thermal oxidation Applied Physics Letters. 94: 202104. DOI: 10.1063/1.3139070  0.444
2009 Lim W, Douglas EA, Kim S-, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. High mobility InGaZnO4 thin-film transistors on paper Applied Physics Letters. 94: 72103. DOI: 10.1063/1.3086394  0.705
2009 Wright J, Lim W, Gila B, Pearton S, Johnson JL, Ural A, Ren F. Hydrogen sensing with Pt-functionalized GaN nanowires Sensors and Actuators B: Chemical. 140: 196-199. DOI: 10.1016/J.Snb.2009.04.009  0.479
2008 Pearton SJ, Lim WT, Wang YL, Shoo K, Norton D, Lee JW, Ren F, Zavada JM. Transparent Thin Film Transistors Based on InZnO for Flexible Electronics Key Engineering Materials. 380: 99-109. DOI: 10.4028/Www.Scientific.Net/Kem.380.99  0.436
2008 Pearton S, Voss L, Khanna R, Lim W, Stafford L, Ren F, Dabiran A, Osinsky A. High Temperature Stable Contacts for GaN HEMTs and LEDs Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A01-04  0.704
2008 Wang YL, Lim W, Covert LN, Anderson TJ, Lin J, Pearton SJ, Norton DP, Ren F. Room temperature deposited enhancement mode and depletion mode indium znic oxide thin film transistors Ecs Transactions. 13: 159-164. DOI: 10.1149/1.2913090  0.371
2008 Lim W, Kim S, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering Journal of the Electrochemical Society. 155: H383. DOI: 10.1149/1.2903294  0.576
2008 Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474  0.537
2008 Lim W, Kim S-, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. Stable room temperature deposited amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 26: 959-962. DOI: 10.1116/1.2917075  0.497
2008 Lim W, Douglas EA, Kim S, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape Applied Physics Letters. 93: 252103. DOI: 10.1063/1.3054167  0.736
2008 Lim W, Wright JS, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts Applied Physics Letters. 93: 202109. DOI: 10.1063/1.3033548  0.473
2008 Lim W, Jang JH, Kim S, Norton DP, Craciun V, Pearton SJ, Ren F, Shen H. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Applied Physics Letters. 93: 082102. DOI: 10.1063/1.2975959  0.571
2008 Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173  0.481
2008 Buyanova I, Wang X, Pozina G, Chen W, Lim W, Norton DP, Pearton SJ, Osinsky A, Dong JW, Hertog B. Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy Applied Physics Letters. 92: 261912. DOI: 10.1063/1.2953178  0.41
2008 Lim W, Norton DP, Jang JH, Craciun V, Pearton SJ, Ren F. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films Applied Physics Letters. 92: 122102. DOI: 10.1063/1.2902322  0.515
2008 Lim W, Norton DP, Pearton SJ, Wang XJ, Chen WM, Buyanova IA, Osinsky A, Dong JW, Hertog B, Thompson AV, Schoenfeld WV, Wang YL, Ren F. Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2836946  0.448
2008 Stafford L, Lim W, Pearton S, Song J, Park J, Heo Y, Lee J, Kim J, Chicoine M, Schiettekatte F. Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas Thin Solid Films. 516: 2869-2873. DOI: 10.1016/J.Tsf.2007.05.071  0.424
2008 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 Applied Surface Science. 254: 5211-5215. DOI: 10.1016/J.Apsusc.2008.02.028  0.384
2008 Lim W, Wang Y, Ren F, Norton D, Kravchenko I, Zavada J, Pearton S. Indium zinc oxide thin films deposited by sputtering at room temperature Applied Surface Science. 254: 2878-2881. DOI: 10.1016/J.Apsusc.2007.10.032  0.52
2008 Lim W, Craciun V, Siebein K, Gila B, Norton D, Pearton S, Ren F. Surface and bulk thermal annealing effects on ZnO crystals Applied Surface Science. 254: 2396-2400. DOI: 10.1016/J.Apsusc.2007.09.066  0.468
2008 Lim W, Sadik P, Norton D, Pearton S, Ren F. Dry etching of CuCrO2 thin films Applied Surface Science. 254: 2359-2363. DOI: 10.1016/J.Apsusc.2007.09.034  0.458
2008 Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z  0.526
2008 Pearton S, Lim W, Wright J, Tien L, Kim H, Norton D, Wang H, Kang B, Ren F, Jun J, Lin J, Osinsky A. ZnO and Related Materials for Sensors and Light-Emitting Diodes Journal of Electronic Materials. 37: 1426-1432. DOI: 10.1007/S11664-008-0416-5  0.396
2007 Lim W, Wang Y, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ. Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity Electrochemical and Solid-State Letters. 10: H267. DOI: 10.1149/1.2750441  0.514
2007 Lim WT, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Reaction-Limited Wet Etching of CuCrO[sub 2] Electrochemical and Solid-State Letters. 10: H178. DOI: 10.1149/1.2719551  0.402
2007 Wang Y, Ren F, Lim W, Norton DP, Pearton SJ, Kravchenko II, Zavada JM. Room temperature deposited indium zinc oxide thin film transistors Applied Physics Letters. 90: 232103. DOI: 10.1063/1.2746084  0.567
2007 Lim WT, Stafford L, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers Applied Physics Letters. 90: 142101. DOI: 10.1063/1.2719150  0.387
2007 Lim W, Stafford L, Wright J, Vossa L, Khanna R, Song J, Park J, Heo YW, Lee J, Kim J, Norton D, Pearton S. Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films Applied Surface Science. 253: 9228-9233. DOI: 10.1016/J.Apsusc.2007.05.061  0.405
2007 Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries Applied Surface Science. 253: 3773-3778. DOI: 10.1016/J.Apsusc.2006.07.094  0.382
2007 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 Journal of Electronic Materials. 37: 161-166. DOI: 10.1007/S11664-007-0334-Y  0.376
2006 Pearton SJ, Tien LC, Kim HS, Norton DP, Chen JJ, Wang HT, Kang BS, Ren F, Lim WT, Wright J, Khanna R, Voss LF, Stafford L, Jun J, Lin J. Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K01-05  0.676
2006 Park J, Song J, Heo Y, Lee J, Kim J, Lim WT, Stafford L, Norton DP, Pearton SJ. Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2737. DOI: 10.1116/1.2393246  0.41
2006 Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries Applied Surface Science. 253: 2752-2757. DOI: 10.1016/J.Apsusc.2006.05.052  0.429
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081  0.657
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037  0.679
2004 Lim WT, Baek IK, Lee JW, Jeon MH, Park WW, Cho GS, Pearton SJ. Planar Inductively Coupled BCl[sub 3] Plasma Etching of III-V Semiconductors Journal of the Electrochemical Society. 151: G343. DOI: 10.1149/1.1690292  0.324
2004 Lim WT, Baek IG, Jung PG, Lee JW, Cho GS, Lee JI, Cho KS, Pearton SJ. Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl[sub 3] Plasma Journal of the Electrochemical Society. 151: G163. DOI: 10.1149/1.1643741  0.304
2004 Lim W, Baek I, Lee J, Lee E, Jeon M, Cho G, Pearton S. BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor Applied Surface Science. 222: 74-81. DOI: 10.1016/J.APSUSC.2003.08.009  0.305
2004 Lee JW, Lim WT, Baek IK, Yoo SR, Jeon MH, Cho GS, Pearton SJ. Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma Journal of Electronic Materials. 33: 358-363. DOI: 10.1007/S11664-004-0143-5  0.306
2003 Lim W, Baek I, Jung P, Lee J, Cho G, Lee J, Cho K, Pearton S. Dry Etching of GaAs in a Planar Inductively Coupled BCl3Plasma Korean Journal of Materials Research. 13: 266-270. DOI: 10.3740/Mrsk.2003.13.4.266  0.302
2003 Lim WT, Baek IK, Lee JW, Lee ES, Jeon MH, Cho GS, Heo YW, Norton DP, Pearton SJ. Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO Applied Physics Letters. 83: 3105-3107. DOI: 10.1063/1.1618373  0.374
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