| Year |
Citation |
Score |
| 2023 |
Lee H, Kim H, Kim K, Jeong K, Leem M, Park S, Kang J, Yeom G, Kim H. Three-Dimensional Surface Treatment of MoS Using BCl Plasma-Derived Radicals. Acs Applied Materials & Interfaces. PMID 37729007 DOI: 10.1021/acsami.3c09311 |
0.333 |
|
| 2023 |
Kim EH, Lee DH, Gu TJ, Yoo H, Jang Y, Jeong J, Kim HW, Kang SG, Kim H, Lee H, Jo KJ, Kim BJ, Kim JW, Im SH, Oh CS, ... ... Kim H, et al. Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors. Nano Letters. PMID 36930591 DOI: 10.1021/acs.nanolett.3c00546 |
0.371 |
|
| 2021 |
Lee H, Choe DH, Jo S, Kim JH, Lee HH, Shin HJ, Park Y, Kang S, Cho Y, Park S, Moon T, Eom D, Leem M, Kim Y, Heo J, ... ... Kim H, et al. Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films. Acs Applied Materials & Interfaces. PMID 34310129 DOI: 10.1021/acsami.1c08718 |
0.31 |
|
| 2021 |
Kim H, Park T, Leem M, Lee H, Ahn W, Lee E, Kim H. Sulfidation characteristics of amorphous nonstoichiometric Mo-oxides for MoS2 synthesis Applied Surface Science. 535: 147684. DOI: 10.1016/J.Apsusc.2020.147684 |
0.438 |
|
| 2020 |
Song J, Yoo J, Cho Y, Kim J, Oh J, Kim I, Kim H, Choi B. Effects of Plasma Damage Removal on Direct Contact Resistance and Hot-Electron-Induced Punch Through (HEIP) of PMOSFETs. Journal of Nanoscience and Nanotechnology. 20: 6622-6626. PMID 32604485 DOI: 10.1166/Jnn.2020.18762 |
0.372 |
|
| 2020 |
Baek J, Jo H, Yun D, Lee I, Lee C, Shin C, Kim H, Ko D, Kim T, Kim D. Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique Solid-State Electronics. 164: 107681. DOI: 10.1016/J.Sse.2019.107681 |
0.357 |
|
| 2020 |
Hwang B, Qaiser N, Lee C, Matteini P, Yoo SJ, Kim H. Effect of Al2O3/Alucone nanolayered composite overcoating on reliability of Ag nanowire electrodes under bending fatigue Journal of Alloys and Compounds. 846: 156420. DOI: 10.1016/J.Jallcom.2020.156420 |
0.381 |
|
| 2020 |
Mahata C, Lee C, An Y, Kim M, Bang S, Kim CS, Ryu J, Kim S, Kim H, Park B. Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems Journal of Alloys and Compounds. 826: 154434. DOI: 10.1016/J.Jallcom.2020.154434 |
0.34 |
|
| 2020 |
Leem M, Lee H, Park T, Ahn W, Kim H, Lee E, Kim H. Intriguing morphological evolution during chemical vapor deposition of HfS2 using HfCl4 and S on sapphire substrate Applied Surface Science. 509: 144701. DOI: 10.1016/J.Apsusc.2019.144701 |
0.404 |
|
| 2020 |
Ahn W, Lee H, Cho Y, Byun K, Kim H, Leem M, Lee H, Park T, Lee E, Shin H, Kim H. Introduction of an Al Seed Layer for Facile Adsorption of MoCl 5 during Atomic Layer Deposition of MoS 2 Physica Status Solidi (a). 217: 1901042. DOI: 10.1002/Pssa.201901042 |
0.403 |
|
| 2019 |
An BS, Kwon Y, Oh JS, Lee C, Choi S, Kim H, Lee M, Pae S, Yang CW. Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect. Acs Applied Materials & Interfaces. PMID 31845581 DOI: 10.1021/Acsami.9B15562 |
0.411 |
|
| 2019 |
Kim DK, Hong SB, Jeong K, Lee C, Kim H, Cho MH. P-N Junction Diode using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices. Acs Nano. PMID 30753059 DOI: 10.1021/Acsnano.8B07730 |
0.342 |
|
| 2019 |
Kim J, Park T, Lee S, Lee S, Kim C, Hyun S, Kim Y, Hwang K, Kim H. Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells Ieee Transactions On Electron Devices. 66: 389-394. DOI: 10.1109/Ted.2018.2878871 |
0.404 |
|
| 2019 |
Lee C, Choi S, An Y, An B, Lee W, Oh W, Eom D, Lee J, Yang C, Kim H. Electrical properties of the HfO2/Al2O3 dielectrics stacked using single- and dual-temperature atomic-layer deposition processes on In0.53Ga0.47As Semiconductor Science and Technology. 34: 105018. DOI: 10.1088/1361-6641/Ab3Bec |
0.418 |
|
| 2019 |
Kim H, Park T, Park S, Leem M, Ahn W, Lee H, Lee C, Lee E, Jeong S, Park S, Kim Y, Kim H. Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application Thin Solid Films. 673: 112-118. DOI: 10.1016/J.Tsf.2019.01.039 |
0.516 |
|
| 2019 |
Kim J, Lee H, Kim J, Shin I, Yoo J, Kim S, Choi S, Kim J, Park T, Kim Y, Hwang K, Lee E, Kim H. Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001) Microelectronic Engineering. 205: 14-19. DOI: 10.1016/J.Mee.2018.11.009 |
0.45 |
|
| 2019 |
Kim J, Shin I, Park T, Kim J, Choi S, Lee S, Hong S, Lee H, Won JY, Kim T, Kim Y, Hwang K, Lee H, Kim H. Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation Journal of Alloys and Compounds. 788: 1013-1020. DOI: 10.1016/J.Jallcom.2019.02.307 |
0.341 |
|
| 2019 |
Lee C, Kim H, Hwang B. Fracture behavior of metal oxide/silver nanowire composite electrodes under cyclic bending Journal of Alloys and Compounds. 773: 361-366. DOI: 10.1016/J.Jallcom.2018.09.212 |
0.419 |
|
| 2019 |
Kim J, Jung Y, Lee S, Hong S, Choi S, Kim J, Park T, Lee E, Won JY, Lee H, Lee YJ, Kim B, Kim JJ, Kim Y, Hwang K, ... ... Kim H, et al. Lamellar-structured Ni-silicide film formed by eutectic solidification Journal of Alloys and Compounds. 771: 124-130. DOI: 10.1016/J.Jallcom.2018.08.257 |
0.435 |
|
| 2019 |
Choi YH, Kwon GH, Jeong JH, Jeong KS, Kwon H, An Y, Kim M, Kim H, Yi Y, Im S, Cho MH. Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy Applied Surface Science. 494: 37-45. DOI: 10.1016/J.Apsusc.2019.07.116 |
0.433 |
|
| 2019 |
Baik M, Kang HK, Kang YS, Jeong KS, Lee C, Kim H, Song JD, Cho MH. Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor Applied Surface Science. 467: 1161-1169. DOI: 10.1016/J.Apsusc.2018.10.212 |
0.488 |
|
| 2018 |
Cho Y, Ji H, Kim H, Yoon J, Choi B. New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam Irradiation. Journal of Nanoscience and Nanotechnology. 18: 5996-6000. PMID 29677731 DOI: 10.1166/Jnn.2018.15594 |
0.334 |
|
| 2018 |
Choi S, Song J, An Y, Lee C, Kim H. Electrical properties of HfO 2 /Al 2 O 3 dielectrics fabricated on In 0.53 Ga 0.47 As by using atomic layer deposition at low temperatures (100 - 200 ◦C) Journal of the Korean Physical Society. 72: 283-288. DOI: 10.3938/Jkps.72.283 |
0.49 |
|
| 2018 |
Lee J, Choi P, Kim S, Oh J, Shin S, Noh J, Kim H, Choi B. New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production Ieee Transactions On Electron Devices. 65: 4839-4845. DOI: 10.1109/Ted.2018.2870141 |
0.345 |
|
| 2018 |
Lee C, An Y, Choi S, Kim H. Shallow doping effect of ZnO treatment using atomic layer deposition process on p-type In0.53Ga0.47As Journal of Physics D. 51: 245106. DOI: 10.1088/1361-6463/Aac374 |
0.423 |
|
| 2018 |
Liu X, Qu D, Choi MS, Lee C, Kim H, Yoo WJ. Homogeneous molybdenum disulfide tunnel diode formed via chemical doping Applied Physics Letters. 112: 183103. DOI: 10.1063/1.5023695 |
0.311 |
|
| 2018 |
Kim H, Lee G, Becker S, Kim J, Kim H, Hwang B. Novel patterning of flexible and transparent Ag nanowire electrodes using oxygen plasma treatment Journal of Materials Chemistry C. 6: 9394-9398. DOI: 10.1039/C8Tc02377H |
0.359 |
|
| 2018 |
Kwak H, Yang J, Kang J, Eom T, Kim H, Lee H, Kang C. Employment of rapid thermal annealing for solution-processed InGaZnO thin film transistors Journal of Materials Science: Materials in Electronics. 29: 8660-8665. DOI: 10.1007/S10854-018-8880-Z |
0.427 |
|
| 2017 |
Baik M, Kang HK, Kang YS, Jeong KS, An Y, Choi S, Kim H, Song JD, Cho MH. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition. Scientific Reports. 7: 11337. PMID 28900097 DOI: 10.1038/S41598-017-09623-1 |
0.496 |
|
| 2017 |
Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics. Scientific Reports. 7: 9769. PMID 28852035 DOI: 10.1038/S41598-017-09888-6 |
0.317 |
|
| 2017 |
Qu D, Liu X, Huang M, Lee C, Ahmed F, Kim H, Ruoff RS, Hone J, Yoo WJ. Carrier-Type Modulation and Mobility Improvement of Thin MoTe2. Advanced Materials (Deerfield Beach, Fla.). PMID 28845903 DOI: 10.1002/Adma.201606433 |
0.335 |
|
| 2017 |
Kang HK, Kang YS, Kim DK, Baik M, Song JD, An Y, Kim H, Cho MH. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates. Acs Applied Materials & Interfaces. PMID 28387121 DOI: 10.1021/Acsami.7B00099 |
0.505 |
|
| 2017 |
Park S, Kim H, Seol D, Park T, Leem M, Ha H, An H, You Kim H, Jeong SJ, Park S, Kim H, Kim Y. Evenly transferred single-layered graphene membrane assisted by strong substrate adhesion. Nanotechnology. 28: 145706. PMID 28287075 DOI: 10.1088/1361-6528/Aa6053 |
0.343 |
|
| 2017 |
Hwang B, An Y, Lee H, Lee E, Becker S, Kim YH, Kim H. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities. Scientific Reports. 7: 41336. PMID 28128218 DOI: 10.1038/Srep41336 |
0.412 |
|
| 2017 |
Lee J, Park D, Yew S, Shin S, Noh J, Kim H, Choi B. Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2–Based High-k Dielectrics Ieee Electron Device Letters. 38: 1524-1527. DOI: 10.1109/Led.2017.2755050 |
0.326 |
|
| 2017 |
An Y, Lee C, Choi S, Song J, Byun Y, Park D, Kim J, Cho M, Kim H. Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors Journal of Physics D: Applied Physics. 50: 415103. DOI: 10.1088/1361-6463/Aa874A |
0.398 |
|
| 2017 |
Park T, Kim H, Leem M, Ahn W, Choi S, Kim J, Uh J, Kwon K, Jeong S, Park S, Kim Y, Kim H. Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy Rsc Advances. 7: 884-889. DOI: 10.1039/C6Ra24733D |
0.372 |
|
| 2017 |
Park T, Leem M, Lee H, Ahn W, Kim H, Kim J, Lee E, Kim Y, Kim H. Synthesis of Vertical MoO2/MoS2 Core–Shell Structures on an Amorphous Substrate via Chemical Vapor Deposition The Journal of Physical Chemistry C. 121: 27693-27699. DOI: 10.1021/Acs.Jpcc.7B08171 |
0.419 |
|
| 2017 |
Kim J, Choi S, Kim J, Lee H, An B, Lee H, Lee C, Yang C, Kim H. Doping and strain effects on the microstructure of erbium silicide on Si:P Journal of Alloys and Compounds. 727: 728-734. DOI: 10.1016/J.Jallcom.2017.08.126 |
0.405 |
|
| 2017 |
Hwang B, Kim M, Cho SM, Becker S, Kim Y, Kim H. Embedded silver‐nanowire electrode in an acrylic polymer–silicate nanoparticle composite for highly robust flexible devices Journal of Applied Polymer Science. 134: 45203. DOI: 10.1002/App.45203 |
0.323 |
|
| 2016 |
Kim J, Choi S, Park T, Kim J, Kim C, Cha T, Lee H, Lee E, Won JY, Lee HI, Hyun S, Kim S, Shin D, Kim Y, Kwon K, ... Kim H, et al. Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition. Acs Applied Materials & Interfaces. PMID 27977917 DOI: 10.1021/Acsami.6B12968 |
0.452 |
|
| 2016 |
Lee Y, Yang J, Lee D, Kim YH, Park JH, Kim H, Cho JH. Trap-induced photoresponse of solution-synthesized MoS2. Nanoscale. PMID 27075554 DOI: 10.1039/C6Nr00654J |
0.322 |
|
| 2016 |
Yang J, Kwak H, Lee Y, Kang YS, Cho MH, Cho JH, Kim YH, Jeong SJ, Park S, Lee HJ, Kim H. MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity. Acs Applied Materials & Interfaces. PMID 26989951 DOI: 10.1021/Acsami.5B11709 |
0.465 |
|
| 2016 |
Kang YS, Kang HK, Kim DK, Jeong KS, Baik M, An Y, Kim H, Song JD, Cho MH. Structural and electrical properties of sub-1-nm EOT HfO2 grown on InAs by atomic layer deposition and its thermal stability. Acs Applied Materials & Interfaces. PMID 26928131 DOI: 10.1021/Acsami.5B10975 |
0.518 |
|
| 2016 |
Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors. Scientific Reports. 6: 20907. PMID 26861833 DOI: 10.1038/Srep20907 |
0.484 |
|
| 2016 |
Kim Y, Song JG, Park YJ, Ryu GH, Lee SJ, Kim JS, Jeon PJ, Lee CW, Woo WJ, Choi T, Jung H, Lee HB, Myoung JM, Im S, Lee Z, ... ... Kim H, et al. Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides. Scientific Reports. 6: 18754. PMID 26725854 DOI: 10.1038/Srep18754 |
0.336 |
|
| 2016 |
Lucero AT, Byun Y, Qin X, Cheng L, Kim H, Wallace RM, Kim J. Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization Japanese Journal of Applied Physics. 55: 08PC02. DOI: 10.7567/Jjap.55.08Pc02 |
0.423 |
|
| 2016 |
Raja J, Nguyen CPT, Lee C, Balaji N, Chatterjee S, Jang K, Kim H, Yi J. Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method Ieee Electron Device Letters. 37: 1272-1275. DOI: 10.1109/Led.2016.2599559 |
0.452 |
|
| 2016 |
Shim J, Yoo G, Kang DH, Jung WS, Byun YC, Kim H, Kang WT, Yu WJ, Yu HY, Park Y, Park JH. Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions Ieee Electron Device Letters. 37: 4-7. DOI: 10.1109/Led.2015.2497714 |
0.355 |
|
| 2016 |
Cho SW, Jeong M, Kim JH, Kwon YH, Kim H, Lee JY, Cho HK. A combinatorial approach to solution-processed InGaO3(ZnO)m superlattice films: growth mechanisms and their thermoelectric properties Crystengcomm. 18: 807-815. DOI: 10.1039/C5Ce01764E |
0.36 |
|
| 2016 |
Choi S, Kim J, Choi J, Cho S, Lee M, Ko E, Rho IC, Kim CH, Kim Y, Ko DH, Kim H. Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer Microelectronic Engineering. 165: 1-5. DOI: 10.1016/J.Mee.2016.08.003 |
0.45 |
|
| 2016 |
Yun MG, Ahn CH, Kim YK, Cho SW, Cho HK, Kim H. Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors Journal of Alloys and Compounds. 672: 449-456. DOI: 10.1016/J.Jallcom.2016.02.166 |
0.503 |
|
| 2016 |
Mahata C, An Y, Choi S, Byun YC, Kim DK, Lee T, Kim J, Cho MH, Kim H. Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP Current Applied Physics. 16: 294-299. DOI: 10.1016/J.Cap.2015.11.022 |
0.495 |
|
| 2016 |
Choi J, Kim J, Oh SJ, Kim D, Kim Y, Chae H, Kim H. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3 Metals and Materials International. 22: 723-729. DOI: 10.1007/S12540-016-5692-7 |
0.49 |
|
| 2015 |
Kim HJ, Kim YJ. Thermal Characteristics of Amorphous Indium-Gallium-Zinc-Oxide and Graphite in Display Panel Based Thin Film Transistors. Journal of Nanoscience and Nanotechnology. 15: 8971-6. PMID 26726627 |
0.34 |
|
| 2015 |
Kim HS, Kim BO, Seo JH. A Study on the Adhesion Properties of Reactive Sputtered Molybdenum Thin Films with Nitrogen Gas on Polyimide Substrate as a Cu Barrier Layer. Journal of Nanoscience and Nanotechnology. 15: 8743-8. PMID 26726588 |
0.313 |
|
| 2015 |
Kim HM, Litao Y, Kim B. Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer. Journal of Nanoscience and Nanotechnology. 15: 8521-6. PMID 26726545 |
0.31 |
|
| 2015 |
Baek E, Yun YS, Kim HK, Lee SH, Lee SG, Im IH, Lee YH. Effect of Post-Annealing on (Ca07Sr0.3)(Zr0.8Ti0.2)O3 Films on Pt and Cu Substrates Fabricated by Aerosol Deposition. Journal of Nanoscience and Nanotechnology. 15: 8478-83. PMID 26726538 |
0.307 |
|
| 2015 |
Kwon YH, Do HW, Kim H, Cho HK. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process. Journal of Nanoscience and Nanotechnology. 15: 7836-40. PMID 26726424 DOI: 10.1166/Jnn.2015.11201 |
0.371 |
|
| 2015 |
Lee HM, Kim HK. Rapidly Thermal Annealed Si-Doped In2O3 Films for Organic Photovoltaics. Journal of Nanoscience and Nanotechnology. 15: 7748-53. PMID 26726406 |
0.366 |
|
| 2015 |
Lim BW, Lee YJ, Kim JH, Jeong HT, Ha TW, Kim EM, Heo GS, Kim YB, Kim HJ, Lee HS. Effect of Oxygen on the Structural/Electrical Properties of NIZO Films on Transparent Flexible Substrates. Journal of Nanoscience and Nanotechnology. 15: 7522-5. PMID 26726363 DOI: 10.1166/jnn.2015.11149 |
0.396 |
|
| 2015 |
Kim SK, Choi PH, Kim SS, Kim HW, Lee NY, Choi BD. Electrical Properties of Solution Processed In-Ga-ZnO Thin Film Transistors with Multi-Stacked Active Layer. Journal of Nanoscience and Nanotechnology. 15: 7508-12. PMID 26726360 |
0.377 |
|
| 2015 |
Jeong MK, Kim HS, Lee SE, Lee HC. Preparation of GZO/Pt/GZO Multi-Layered Transparent Electrodes and Their Application to Touch Sensor Devices. Journal of Nanoscience and Nanotechnology. 15: 7436-43. PMID 26726347 DOI: 10.1166/Jnn.2015.11161 |
0.317 |
|
| 2015 |
Yang J, Gu Y, Lee E, Lee H, Park SH, Cho MH, Kim YH, Kim YH, Kim H. Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system. Nanoscale. 7: 9311-9. PMID 25946575 DOI: 10.1039/C5Nr01486G |
0.472 |
|
| 2015 |
Byun YC, Choi S, An Y, McIntyre PC, Kim H. Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 7: 7445. PMID 25823007 DOI: 10.1021/Acsami.5B02372 |
0.457 |
|
| 2015 |
An Y, Mahata C, Lee C, Choi S, Byun YC, Kang YS, Lee T, Kim J, Cho MH, Kim H. Electrical and band structural analyses of Ti1-xAlxOyfilms grown by atomic layer deposition on p-type GaAs Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/41/415302 |
0.439 |
|
| 2015 |
Ahn CH, Cho HK, Kim H. Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors Journal of Materials Chemistry C. 4: 727-735. DOI: 10.1039/C5Tc03766B |
0.426 |
|
| 2015 |
Kim DK, Kang YS, Jeong KS, Kang HK, Cho SW, Chung KB, Kim H, Cho MH. Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation Journal of Materials Chemistry C. 3: 5078-5088. DOI: 10.1039/C5Tc00076A |
0.441 |
|
| 2015 |
Kang Y, Kim D, Kang H, Cho S, Choi S, Kim H, Seo J, Lee J, Cho M. Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition The Journal of Physical Chemistry C. 119: 6001-6008. DOI: 10.1021/Jp511666M |
0.407 |
|
| 2015 |
Na S, Kang JG, Choi J, Lee NS, Park CG, Kim H, Lee SH, Lee HJ. Silicidation of mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties Acta Materialia. 92: 1-7. DOI: 10.1016/J.Actamat.2015.03.041 |
0.384 |
|
| 2015 |
Lucero AT, Byun YC, Qin X, Cheng L, Kim H, Wallace RM, Kim J. In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As Electronic Materials Letters. 11: 769-774. DOI: 10.1007/S13391-015-5150-6 |
0.346 |
|
| 2015 |
Choi S, Choi J, Kim H. Formation of Er-germanosilicide films on strained Si1−xGexwith different Ge contents Physica Status Solidi (a). 212: 775-779. DOI: 10.1002/Pssa.201431753 |
0.457 |
|
| 2014 |
Choi J, Choi S, Kang YS, Na S, Lee HJ, Cho MH, Kim H. Defect-free erbium silicide formation using an ultrathin Ni interlayer. Acs Applied Materials & Interfaces. 6: 14712-7. PMID 25093916 DOI: 10.1021/Am503626G |
0.488 |
|
| 2014 |
Byun YC, Choi S, An Y, McIntyre PC, Kim H. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 6: 10482-8. PMID 24911531 DOI: 10.1021/Am502048D |
0.484 |
|
| 2014 |
Kang YS, Kim DK, Kang HK, Jeong KS, Cho MH, Ko DH, Kim H, Seo JH, Kim DC. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics. Acs Applied Materials & Interfaces. 6: 3896-906. PMID 24467437 DOI: 10.1021/Am4049496 |
0.55 |
|
| 2014 |
Kim J, Choi J, Chae H, Kim H. Effect of indium doping on low-voltage ZnO nanocrystal field-effect transistors with ion-gel gate dielectric Japanese Journal of Applied Physics. 53: 071101. DOI: 10.7567/Jjap.53.071101 |
0.391 |
|
| 2014 |
Mok I, Kim J, Lee K, Kim Y, Sohn H, Kim H. Effect of crystallinity on the resistive switching behavior of HfAlO x films Journal of the Korean Physical Society. 64: 419-423. DOI: 10.3938/Jkps.64.419 |
0.373 |
|
| 2014 |
Lee SM, Hwang SM, Hwang SY, Kim TW, Lee SH, Park GC, Choi JY, Yoon JJ, Kim TJ, Kim YD, Kim H, Lim JH, Joo J. Influences of rapid thermal process on solution-deposited Ti-silicate/Si films: Phase segregation, composition and interface changes, and dielectric properties Materials Chemistry and Physics. 145: 168-175. DOI: 10.1016/J.Matchemphys.2014.01.055 |
0.452 |
|
| 2014 |
Jeong KS, Song J, Lim D, Lee MS, Kim H, Cho M. Structural evolution and defect control of yttrium-doped ZrO 2 films grown by a sol–gel method Applied Surface Science. 320: 128-137. DOI: 10.1016/J.Apsusc.2014.08.183 |
0.454 |
|
| 2013 |
Choi J, Choi S, Kim J, Na S, Lee HJ, Lee SH, Kim H. Silicide formation process of Er films with Ta and TaN capping layers. Acs Applied Materials & Interfaces. 5: 12744-50. PMID 24245709 DOI: 10.1021/Am4041338 |
0.478 |
|
| 2013 |
Lee JW, Kim HK, Bae JH, Park MH, Kim H, Ryu J, Yang CW. Enhanced morphological and thermal stabilities of nickel germanide with an ultrathin tantalum layer studied by ex situ and in situ transmission electron microscopy. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 19: 114-8. PMID 23920187 DOI: 10.1017/S1431927613012452 |
0.433 |
|
| 2013 |
Yang J, Kim S, Choi W, Park SH, Jung Y, Cho MH, Kim H. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Acs Applied Materials & Interfaces. 5: 4739-44. PMID 23683268 DOI: 10.1021/Am303261C |
0.498 |
|
| 2013 |
Mahata C, Byun YC, An CH, Choi S, An Y, Kim H. Comparative study of atomic-layer-deposited stacked (HfO2/Al2O3) and nanolaminated (HfAlOx) dielectrics on In0.53Ga0.47As. Acs Applied Materials & Interfaces. 5: 4195-201. PMID 23611632 DOI: 10.1021/Am400368X |
0.487 |
|
| 2013 |
Kang YS, Kim DK, Jeong KS, Cho MH, Kim CY, Chung KB, Kim H, Kim DC. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs. Acs Applied Materials & Interfaces. 5: 1982-9. PMID 23438318 DOI: 10.1021/Am302803F |
0.5 |
|
| 2013 |
Kim S, Na S, Jeon H, Kim S, Lee B, Yang J, Kim H, Lee HJ. Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires. Nanotechnology. 24: 065703. PMID 23340217 DOI: 10.1088/0957-4484/24/6/065703 |
0.388 |
|
| 2013 |
Lee J, Kim J, Kim H, Bae YM, Lee K, Cho HJ. Effect of thermal treatment on the chemical resistance of polydimethylsiloxane for microfluidic devices Journal of Micromechanics and Microengineering. 23: 035007. DOI: 10.1088/0960-1317/23/3/035007 |
0.301 |
|
| 2013 |
Jang K, Raja J, Kim J, Park C, Lee Y, Yang J, Kim H, Yi J. Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors Semiconductor Science and Technology. 28: 085015. DOI: 10.1088/0268-1242/28/8/085015 |
0.513 |
|
| 2013 |
An C, Mahata C, Byun Y, Kim H. Atomic-layer-deposited (HfO2)1−x(Al2O3)x nanolaminate films on InP with different Al2O3 contents Journal of Physics D: Applied Physics. 46: 275301. DOI: 10.1088/0022-3727/46/27/275301 |
0.53 |
|
| 2013 |
Moon MR, Jeon H, Na S, Kim S, Jung D, Kim H, Lee H. Microstructure and electrical properties of XInZnO (X=Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga Journal of Alloys and Compounds. 563: 124-129. DOI: 10.1016/J.Jallcom.2012.12.105 |
0.417 |
|
| 2013 |
Lee SM, Hwang SM, Hwang SY, Kim TW, Choi JY, Park JK, Kim TJ, Kim YD, Kim H, Lim JH, Joo J. Application of rapid thermal process to solution-processed Ti-silicate films for enhancing permittivity without losing amorphous nature Current Applied Physics. 13: S41-S44. DOI: 10.1016/J.Cap.2013.01.003 |
0.471 |
|
| 2013 |
Park SH, Kang YS, Chae J, Kim HJ, Cho MH, Ko DH, Byun YC, Kim H, Cho SW, Kim CY, Seo JH. Control of the interfacial reaction in HfO2 on Si-passivated GaAs Applied Surface Science. 283: 375-381. DOI: 10.1016/J.Apsusc.2013.06.118 |
0.45 |
|
| 2013 |
An C, Mahata C, Byun Y, Lee MS, Kang YS, Cho M, Kim H. Electrical characteristics of HfO2films on InP with different atomic-layer-deposition temperatures Physica Status Solidi (a). 210: 1381-1385. DOI: 10.1002/Pssa.201228759 |
0.494 |
|
| 2013 |
Kang YS, Kim DK, Cho MH, Seo JH, Shon HK, Lee TG, Cho YD, Kim SW, Ko DH, Kim H. Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment Physica Status Solidi (a) Applications and Materials Science. 210: 1612-1617. DOI: 10.1002/Pssa.201228628 |
0.506 |
|
| 2012 |
Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/Ncomms2018 |
0.492 |
|
| 2012 |
Hwang SM, Lee SM, Choi JH, Park K, Joo J, Lim JH, Kim H. Microstructure and dielectric characteristics of high-k tetragonal ZrO2 films with various thicknesses processed by sol-gel method. Journal of Nanoscience and Nanotechnology. 12: 3350-4. PMID 22849122 DOI: 10.1166/Jnn.2012.5630 |
0.478 |
|
| 2012 |
Park K, Oh S, Jung D, Chae H, Kim H, Boo JH. Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells. Nanoscale Research Letters. 7: 74. PMID 22230259 DOI: 10.1186/1556-276X-7-74 |
0.422 |
|
| 2012 |
Moon MR, An C, Na S, Jeon H, Jung D, Kim H, Lee H. Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors Applied Microscopy. 42: 212-217. DOI: 10.9729/Am.2012.42.4.212 |
0.428 |
|
| 2012 |
Lee SM, Hwang SM, Choi JH, Park K, Kim H, Lim JH, Joo J. Effects of heating time and intermediate heating on sol-gel-processed ZrO 2 thin films Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.09Mf13 |
0.366 |
|
| 2012 |
Byun Y, Mahata C, An C, Kim H. Starting layer dependence of the atomic-layer-deposited HfAlOxfilms on GaAs Semiconductor Science and Technology. 27: 105026. DOI: 10.1088/0268-1242/27/10/105026 |
0.504 |
|
| 2012 |
Nam E, Oh S, Jung D, Kim H, Chae H, Yi J. Organic photovoltaic devices with the bilayer cathode interfacial structure of pyromellitic dianhydride and lithium fluoride Semiconductor Science and Technology. 27: 105004. DOI: 10.1088/0268-1242/27/10/105004 |
0.392 |
|
| 2012 |
Byun Y, Mahata C, An C, Oh J, Choi R, Kim H. Interfacial and electrical properties of HfO2gate dielectrics grown on GaAs by atomic layer deposition using different oxidants Journal of Physics D: Applied Physics. 45: 435305. DOI: 10.1088/0022-3727/45/43/435305 |
0.454 |
|
| 2012 |
Soo Lee M, Choi S, An C, Kim H. Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films Applied Physics Letters. 100: 143504. DOI: 10.1063/1.3700728 |
0.38 |
|
| 2012 |
Lee J, Bae J, Hwang J, Kim H, Park M, Kim H, Yang C. Dynamic study on microstructural evolution of nickel germanide utilizing zirconium interlayer Microelectronic Engineering. 89: 23-26. DOI: 10.1016/J.Mee.2011.03.010 |
0.376 |
|
| 2012 |
Kim TW, Jang TY, Kim D, Kim JW, Jeong JK, Choi R, Lee MS, Kim H. Effect of la incorporation on reliability characteristics of metal-oxide-semiconductor capacitors with hafnium based high-k dielectrics Microelectronic Engineering. 89: 31-33. DOI: 10.1016/J.Mee.2011.01.036 |
0.346 |
|
| 2012 |
Kim H, Ha MH, Jung D, Chae H, Kim H. Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films Materials Research Bulletin. 47: 3008-3010. DOI: 10.1016/J.Materresbull.2012.04.097 |
0.408 |
|
| 2012 |
Lee MS, Park SH, Cho M, Kim H. Solution-deposited GdCeOx thin films: Microstructure, band structure, and dielectric property Materials Research Bulletin. 47: 1423-1427. DOI: 10.1016/J.Materresbull.2012.02.048 |
0.421 |
|
| 2012 |
Na S, Choi H, Lee B, Choi J, Seo Y, Kim H, Lee S, Lee H. A study on the formation mechanism of ytterbium silicide for Schottky contact applications Surface and Interface Analysis. 44: 1497-1502. DOI: 10.1002/Sia.4985 |
0.47 |
|
| 2012 |
Moon MR, Na S, Jeon H, Lee TH, Jung D, Kim H, Yang J, Lee H. The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors Surface and Interface Analysis. 44: 1431-1435. DOI: 10.1002/Sia.4968 |
0.442 |
|
| 2012 |
Lee JJ, Shin Y, Choi J, Kim H, Hyun S, Choi S, Cho BJ, Lee S. Reduction of charge trapping in HfO2film on a Ge substrate by trimethylaluminum pretreatment Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 439-441. DOI: 10.1002/Pssr.201206315 |
0.474 |
|
| 2012 |
An C, Byun Y, Cho M, Kim H. Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 247-249. DOI: 10.1002/Pssr.201206178 |
0.464 |
|
| 2012 |
An C, Byun Y, Lee MS, Kim H. Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 211-213. DOI: 10.1002/Pssr.201206109 |
0.447 |
|
| 2012 |
Yang J, Park JK, Kim S, Choi W, Lee S, Kim H. Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics Physica Status Solidi (a). 209: 2087-2090. DOI: 10.1002/Pssa.201228303 |
0.544 |
|
| 2011 |
Kim J, Kim NH, Kim H, Jung D, Chae H. Simultaneous plasma and thermal treatments of ITO surfaces for organic solar cells. Journal of Nanoscience and Nanotechnology. 11: 6490-3. PMID 22121742 DOI: 10.1166/Jnn.2011.4507 |
0.327 |
|
| 2011 |
Lee HA, Byun YC, Singh U, Cho HJ, Kim H. Surface modification of carbon post arrays by atomic layer deposition of ZnO film. Journal of Nanoscience and Nanotechnology. 11: 7322-6. PMID 22103187 DOI: 10.1166/Jnn.2011.4827 |
0.445 |
|
| 2011 |
Yang J, Lee MS, Park K, Moon MR, Jung D, Kim H, Lee H. Effects of the microstructure of ZnO seed layer on the ZnO nanowire density Journal of Materials Research. 26: 1292-1297. DOI: 10.1557/Jmr.2011.81 |
0.449 |
|
| 2011 |
An C, Byun Y, Lee MS, Kim H. Thermal Stabilities of ALD-HfO2 Films on HF- and (NH4)2S-Cleaned InP Journal of the Electrochemical Society. 158: G242. DOI: 10.1149/2.010112Jes |
0.365 |
|
| 2011 |
Jeon H, Na S, Moon MR, Jung D, Kim H, Lee H. The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films Journal of the Electrochemical Society. 158: H949. DOI: 10.1149/1.3615534 |
0.383 |
|
| 2011 |
Byun Y, An C, Choi JY, Kim CY, Cho M, Kim H. Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time Journal of the Electrochemical Society. 158: G141. DOI: 10.1149/1.3569751 |
0.456 |
|
| 2011 |
Lee MS, An C, Park K, Choi J, Kim H. Effect of Y, Gd, Dy, and Ce Doping on the Microstructural and Electrical Properties of Sol-Gel-Deposited ZrO2 Film Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3562971 |
0.454 |
|
| 2011 |
Ahn CH, Kong BH, Kim H, Cho HK. Improved Electrical Stability in the Al Doped ZnO Thin-Film-Transistors Grown by Atomic Layer Deposition Journal of the Electrochemical Society. 158: H170. DOI: 10.1149/1.3525278 |
0.514 |
|
| 2011 |
Park K, Choi J, Lee H, Kwon J, Kim H. Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes Japanese Journal of Applied Physics. 50: 096504. DOI: 10.1143/Jjap.50.096504 |
0.446 |
|
| 2011 |
An C, Yang J, Lee YE, Kim C, Nam E, Jung D, Cho M, Kim H. A Triple-Layered Microcavity Structure for Electrophoretic Image Display Ieee Transactions On Electron Devices. 58: 1116-1120. DOI: 10.1109/Ted.2011.2107556 |
0.407 |
|
| 2011 |
Yang J, Lee MS, Lee H, Kim H. Hybrid ZnO nanowire networked field-effect transistor with solution-processed InGaZnO film Applied Physics Letters. 98: 253106. DOI: 10.1063/1.3601466 |
0.435 |
|
| 2011 |
Park SH, Kim HJ, Cho M, Yi Y, Cho SW, Yang J, Kim H. The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface Applied Physics Letters. 98: 082111. DOI: 10.1063/1.3555440 |
0.364 |
|
| 2011 |
Hwang SM, Lee SM, Park K, Lee MS, Joo J, Lim JH, Kim H, Yoon JJ, Kim YD. Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films Applied Physics Letters. 98: 022903. DOI: 10.1063/1.3541784 |
0.488 |
|
| 2011 |
Kim DC, Lee JH, Mohanta SK, Cho HK, Kim H, Lee JY. Density and aspect ratio controlled MgZnO nanowire arrays by spontaneous phase separation effect Crystengcomm. 13: 813-818. DOI: 10.1039/C0Ce00114G |
0.423 |
|
| 2011 |
Singh U, Lee HA, Byun Y, Kumar A, Seal S, Kim H, Cho HJ. ZnO Modified High Aspect Ratio Carbon Electrodes for Hydrogen Sensing Applications Procedia Engineering. 25: 1669-1672. DOI: 10.1016/J.Proeng.2011.12.413 |
0.37 |
|
| 2010 |
Joo J, Shim JH, Choi JH, Lee CM, Park K, Kim H, Lee H, Lim JH, Moon MR, Jung D. Fabrication and Comparison of the Properties of SnInZnO and InZnO TFTs Processed by Using the Sol-gel Method Journal of the Korean Physical Society. 57: 1847-1851. DOI: 10.3938/Jkps.57.1847 |
0.474 |
|
| 2010 |
Nam E, Moon MR, Kim J, Jung D, Kim H, Chae H, Yi J. Effects of the pyromellitic dianhydride cathode interfacial layer on characteristics of organic solar cells based on poly(3-hexylthiophene-2,5-diyl) and [6,6]-phenyl C61 butyric acid methyl ester Journal of Materials Research. 25: 866-870. DOI: 10.1557/Jmr.2010.0113 |
0.393 |
|
| 2010 |
Park K, An C, Hwang B, Lee H, Kim H, Son K, Kwon J, Lee S. A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors Journal of Materials Research. 25: 266-271. DOI: 10.1557/Jmr.2010.0032 |
0.44 |
|
| 2010 |
Nam E, Moon MR, Jung D, Lee S, Chae H, Cho JH, Yi J, Park SH, Cho M, Kim H. Performance Improvement of the Organic Light-Emitting Diodes by Using a LiF/Pyromellitic Dianhydride Stacked Cathode Interfacial Layer Journal of the Electrochemical Society. 157: J425. DOI: 10.1149/1.3497351 |
0.395 |
|
| 2010 |
Lee MS, An C, Lim JH, Joo J, Lee H, Kim H. Characteristics of Ce-Doped ZrO[sub 2] Dielectric Films Prepared by a Solution Deposition Process Journal of the Electrochemical Society. 157: G142. DOI: 10.1149/1.3367749 |
0.42 |
|
| 2010 |
Moon MR, Na S, Jeon H, An C, Park K, Jung D, Kim H, Lee Y, Lee H. Effects of Substrate Heating on the Amorphous Structure of InGaZnO Films and the Electrical Properties of Their Thin Film Transistors Applied Physics Express. 3: 111101. DOI: 10.1143/Apex.3.111101 |
0.438 |
|
| 2010 |
Ahn CH, Kim H, Cho HK. Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition Thin Solid Films. 519: 747-750. DOI: 10.1016/J.Tsf.2010.08.151 |
0.46 |
|
| 2009 |
Lee MS, An C, Park K, Kim H. Simultaneous Control of the Work Function and Interfacial Oxide Thickness Using Ni∕Hf Stacked Electrode on HfO[sub 2] Electrochemical and Solid-State Letters. 12: H120. DOI: 10.1149/1.3070633 |
0.42 |
|
| 2009 |
Lee S, Woo J, Nam E, Jung D, Yang J, Chae H, Kim H. Effects of Deposition Plasma Power on Properties of Low Dielectric-Constant Plasma Polymer Films Deposited Using Hexamethyldisiloxane and 3,3-Dimethyl-1-butene Precursors Japanese Journal of Applied Physics. 48: 106001. DOI: 10.1143/Jjap.48.106001 |
0.388 |
|
| 2009 |
An C, Lee MS, Choi J, Kim H. Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration Applied Physics Letters. 94: 262901. DOI: 10.1063/1.3159625 |
0.457 |
|
| 2009 |
Lim JH, Shim JH, Choi JH, Joo J, Park K, Jeon H, Moon MR, Jung D, Kim H, Lee HJ. Solution-processed InGaZnO-based thin film transistors for printed electronics applications Applied Physics Letters. 95. DOI: 10.1063/1.3157265 |
0.448 |
|
| 2008 |
Pang C, Hwang J, Park K, Jung D, Kim H, Chae H. Efficiency enhancement of polymer solar cells by patterning nanoscale indium tin oxide layer. Journal of Nanoscience and Nanotechnology. 8: 5279-83. PMID 19198438 DOI: 10.1166/Jnn.2008.1087 |
0.377 |
|
| 2008 |
Sohn S, Lee J, Park K, Jung D, Kim H, Yi J. Enhanced Performance of an Organic Light-Emitting Device by Using an Oxidant Component during a Surface Reaction Process by Using Atomic Layer Chemical Vapor Deposition Journal of the Korean Physical Society. 53: 3416-3421. DOI: 10.3938/Jkps.53.3416 |
0.414 |
|
| 2008 |
Lee S, Jung D, Yang J, Boo J, Kim H, Lee J, Chae H. Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low- k SiCOH films Journal of Materials Research. 23: 856-861. DOI: 10.1557/Jmr.2008.0106 |
0.369 |
|
| 2008 |
An C, Lee MS, Kim H. Effects of Si[sub 3]N[sub 4] Thickness on the Electrical Properties of Oxide-Nitride-Oxide Tunneling Dielectrics Journal of the Electrochemical Society. 155: G247. DOI: 10.1149/1.2967721 |
0.456 |
|
| 2008 |
Lee J, Bae J, Park M, Kang H, Kim H, Yang C. Microstructural evolution of nickel-germanide in the Ni1−xTax/Ge systems during in situ annealing Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 26: 688-691. DOI: 10.1116/1.2839763 |
0.423 |
|
| 2008 |
Hwang B, Park K, Chun H, An C, Kim H, Lee H. The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors Applied Physics Letters. 93: 222104. DOI: 10.1063/1.3031726 |
0.435 |
|
| 2008 |
Kim H, Sohn S, Jung D, Maeng WJ, Kim H, Kim TS, Hahn J, Lee S, Yi Y, Cho M. Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers Organic Electronics. 9: 1140-1145. DOI: 10.1016/J.Orgel.2008.08.008 |
0.481 |
|
| 2007 |
Jang S, Chae H, Jung D, Kim H, Kim C. Simultaneous Oxygen Plasma and Thermal Treatments of an ITO Surface to Improve the Electrical Characteristics of Organic Light-Emitting Diodes Journal of the Korean Physical Society. 51: 956. DOI: 10.3938/Jkps.51.956 |
0.337 |
|
| 2007 |
Lee D, Suh D, Ko D, Park K, Lee MS, Kim H. Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents Journal of the Korean Physical Society. 51: 168. DOI: 10.3938/Jkps.51.168 |
0.445 |
|
| 2007 |
Lee D, Suh D, Pae Y, Kim H, Cho M, Ko DH. The Dielectric Characteristics and Thermal Stability of Hf-Silicate Films with Different Si Contents Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2743101 |
0.495 |
|
| 2007 |
Sohn S, Park K, Jung D, Kim H, Chae H, Kim H, Yi J, Cho M, Boo J. Characteristics of Organic Light Emitting Diodes with Tetrakis(Ethylmethylamino) Hafnium Treated Indium Tin Oxide Japanese Journal of Applied Physics. 46: L461-L464. DOI: 10.1143/Jjap.46.L461 |
0.44 |
|
| 2007 |
Lee S, Yang J, Yeo S, Lee J, Jung D, Boo J, Kim H, Chae H. Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-kSiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition Japanese Journal of Applied Physics. 46: 536-541. DOI: 10.1143/Jjap.46.536 |
0.435 |
|
| 2007 |
Jang SH, Lim JH, Yoon KM, Lee SY, Kim KT, Park EC, Joo J, Jung S, Kim H. The Effects of the Humidity and Thickness on YBCO Film Prepared Using the TFA-MOD Method Ieee Transactions On Applied Superconductivity. 17: 3298-3301. DOI: 10.1109/Tasc.2007.898850 |
0.411 |
|
| 2007 |
Kim H, Ok I, Zhang M, Zhu F, Park S, Yum J, Zhao H, Lee JC. Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer Applied Physics Letters. 91: 42904. DOI: 10.1063/1.2762291 |
0.401 |
|
| 2007 |
Kim Y, Roh Y, Yoo J, Kim H. Characteristics of atomic layer deposition grown HfO2 films after exposure to plasma treatments Thin Solid Films. 515: 2984-2989. DOI: 10.1016/J.Tsf.2006.08.039 |
0.465 |
|
| 2007 |
Lee C, Lee J, Choi D, Lee H, Kim H, Jung S, Moon W. Effects of nodule treatment of rolled copper on the mechanical properties of the flexible copper-clad laminate Microelectronic Engineering. 84: 2653-2657. DOI: 10.1016/J.Mee.2007.05.063 |
0.343 |
|
| 2006 |
Chen R, Porter DW, Kim H, McIntyre PC, Bent SF. Area Selective Atomic Layer Deposition by Soft Lithography Mrs Proceedings. 917. DOI: 10.1557/PROC-0917-E11-05 |
0.338 |
|
| 2006 |
Chen R, Porter DW, Kim H, Mcintyre PC, Bent SF. Area selective atomic layer deposition by soft lithography Materials Research Society Symposium Proceedings. 917: 161-166. DOI: 10.1557/Proc-0917-E11-05 |
0.41 |
|
| 2006 |
Do K, Lee D, Kim J, Kim H, Ko D. A Study on the Formation Processes and Microstructures of Ni Germanosilicide Films on Si[sub 1−x]Ge[sub x](x=0.1 and 0.2) Journal of the Electrochemical Society. 153: J69. DOI: 10.1149/1.2200286 |
0.444 |
|
| 2006 |
Sohn S, Park K, Lee D, Jung D, Kim HM, Manna U, Yi J, Boo J, Chae H, Kim H. Characteristics of Polymer Light Emitting Diodes with the LiF Anode Interfacial Layer Japanese Journal of Applied Physics. 45: 3733-3736. DOI: 10.1143/Jjap.45.3733 |
0.419 |
|
| 2006 |
Chui CO, Kim H, Chi D, Mcintyre PC, Saraswat KC. Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics Ieee Transactions On Electron Devices. 53: 1509-1516. DOI: 10.1109/Ted.2006.875812 |
0.76 |
|
| 2006 |
Akbar MS, Choi C, Rhee SJ, Krishnan SA, Kang CY, Zhang MH, Lee T, Ok I, Zhu F, Kim HS, Lee JC. Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides Ieee Transactions On Electron Devices. 53: 1200-1207. DOI: 10.1109/Ted.2006.872886 |
0.332 |
|
| 2006 |
Lee T, Rhee SJ, Kang CY, Zhu F, Kim HS, Choi C, Ok I, Zhang M, Krishnan S, Thareja G, Lee JC. Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy2O3) Into HfO2 n-MOSFETs Ieee Electron Device Letters. 27: 640-643. DOI: 10.1109/Led.2006.879023 |
0.376 |
|
| 2006 |
Rhee SJ, Zhu F, Kim HS, Choi CH, Kang CY, Zhang M, Lee T, Ok I, Krishnan SA, Lee JC. Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs Ieee Electron Device Letters. 27: 225-227. DOI: 10.1109/Led.2006.871187 |
0.454 |
|
| 2006 |
Ok IJ, Kim HS, Zhang M, Kang CY, Rhee SJ, Choi C, Krishnan SA, Lee T, Zhu F, Thareja G, Lee JC. Metal gate - HfO2 MOS structures on GaAs substrate with and without Si interlayer Ieee Electron Device Letters. 27: 145-147. DOI: 10.1109/Led.2006.870243 |
0.474 |
|
| 2006 |
Lim JH, Jang SH, Joo J, Kim H, Lee H, Hong G, Kim C. Fabrication of YBCO film approached by the ‘211 process’ in the TFA-MOD method Superconductor Science and Technology. 19: 306-312. DOI: 10.1088/0953-2048/19/4/011 |
0.414 |
|
| 2006 |
Seo KI, Lee DI, Pianetta P, Kim H, Saraswat KC, McIntyre PC. Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer Applied Physics Letters. 89. DOI: 10.1063/1.2358834 |
0.631 |
|
| 2006 |
Sreenivasan R, McIntyre PC, Kim H, Saraswat KC. Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition Applied Physics Letters. 89: 112903. DOI: 10.1063/1.2348735 |
0.626 |
|
| 2006 |
Lee S, Koo B, Shin J, Lee E, Park H, Kim H. Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance Applied Physics Letters. 88: 162109. DOI: 10.1063/1.2196475 |
0.363 |
|
| 2006 |
Rhee SJ, Zhu F, Kim HS, Kang CY, Choi CH, Zhang M, Lee T, Ok I, Krishnan SA, Lee JC. Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO 2 transistor Applied Physics Letters. 88. DOI: 10.1063/1.2192646 |
0.475 |
|
| 2006 |
Lim JH, Jang SH, Ha H, Lee JS, Yoon KM, Joo J, Jung S, Kim J, Kim H, Nah W. Fabrication of YBCO coated conductor by TFA-MOD using the “211 process” Physica C-Superconductivity and Its Applications. 445: 594-597. DOI: 10.1016/J.Physc.2006.04.097 |
0.354 |
|
| 2006 |
Jang SH, Lim JH, Kim KT, Lee JS, Yoon KM, Kim H, Joo J, Kim H, Lee H, Hong G. The effects of the firing temperature of YBCO coated conductors fabricated by TFA-MOD process Physica C-Superconductivity and Its Applications. 445: 590-593. DOI: 10.1016/J.Physc.2006.04.053 |
0.386 |
|
| 2006 |
Lim JH, Kim KT, Joo J, Kim H, Jung S, Jeong Y, Kim C. Development of textured Ni substrates prepared by powder metallurgy and casting Physica C: Superconductivity. 436: 103-109. DOI: 10.1016/J.Physc.2006.02.009 |
0.331 |
|
| 2005 |
Jagannathan H, Kim H, Deal M, McIntyre PC, Nishi Y. Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates The Japan Society of Applied Physics. 2005: 1012-1013. DOI: 10.7567/Ssdm.2005.G-9-2 |
0.315 |
|
| 2005 |
Kim H, Saraswat KC, McIntyre PC. Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition Journal of Materials Research. 20: 3125-3132. DOI: 10.1557/Jmr.2005.0394 |
0.647 |
|
| 2005 |
Hong Y, Kim Y, Do K, Lee D, Ko D, Ku J, Kim H. Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 23: 1413-1418. DOI: 10.1116/1.2011401 |
0.486 |
|
| 2005 |
Zhu F, Rhee SJ, Kang CY, Choi CH, Akbar MS, Krishnan SA, Zhang M, Kim HS, Lee T, Ok I, Lee JC. Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric Ieee Electron Device Letters. 26: 876-878. DOI: 10.1109/Led.2005.859637 |
0.412 |
|
| 2005 |
Choi C, Kang CY, Rhee SJ, Akbar MS, Krishnan SA, Zhang M, Kim HS, Lee T, Ok I, Zhu F, Lee JC. Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT < 0.7 nm) with tan gate electrode using engineered interface layer Ieee Electron Device Letters. 26: 454-457. DOI: 10.1109/Led.2005.851240 |
0.495 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Porter DW, Bent SF. Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922076 |
0.431 |
|
| 2005 |
Seo K, McIntyre PC, Kim H, Saraswat KC. Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing Applied Physics Letters. 86: 082904. DOI: 10.1063/1.1866644 |
0.681 |
|
| 2005 |
Sayan S, Nguyen NV, Ehrstein J, Emge T, Garfunkel E, Croft M, Zhao X, Vanderbilt D, Levin I, Gusev EP, Kim H, McIntyre PJ. Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1864235 |
0.472 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Bent SF. Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition Chemistry of Materials. 17: 536-544. DOI: 10.1021/Cm0486666 |
0.397 |
|
| 2004 |
Saraswat KC, Chui CO, Krishnamohan T, Okyay AK, Kim H, McIntyre P. Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects The Japan Society of Applied Physics. 2004: 718-719. DOI: 10.7567/Ssdm.2004.A-8-1 |
0.73 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Controlling area-selective atomic layer deposition of HfO 2 dielectric by self-assembled monolayers Materials Research Society Symposium Proceedings. 811: 57-62. DOI: 10.1557/Proc-811-D3.3 |
0.363 |
|
| 2004 |
Kim H, McIntyre PC, Saraswat KC. Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition Journal of Materials Research. 19: 643-650. DOI: 10.1557/Jmr.2004.19.2.643 |
0.636 |
|
| 2004 |
Chui CO, Kim H, McIntyre PC, Saraswat KC. Atomic layer deposition of high-κ dielectric for germanium MOS applications - substrate surface preparation Ieee Electron Device Letters. 25: 274-276. DOI: 10.1109/Led.2004.827285 |
0.75 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Cho MH. Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition Applied Physics Letters. 85: 2902-2904. DOI: 10.1063/1.1797564 |
0.755 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Stemmer S. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer Journal of Applied Physics. 96: 3467-3472. DOI: 10.1063/1.1776636 |
0.724 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Self-assembled monolayer resist for atomic layer deposition of HfO 2 and ZrO 2 high-κ gate dielectrics Applied Physics Letters. 84: 4017-4019. DOI: 10.1063/1.1751211 |
0.515 |
|
| 2004 |
Kim H, Marshall A, McIntyre PC, Saraswat KC. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies Applied Physics Letters. 84: 2064-2066. DOI: 10.1063/1.1667621 |
0.598 |
|
| 2003 |
Byun JS, Mak A, Zhang A, Yoon A, Zhang T, Gelatos A, Jackson R, Thakur R, Lee S, Kim H. Effect of NH[sub 3] thermal treatment on an atomic layer deposited on tungsten films and formation of W–B–N Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1466. DOI: 10.1116/1.1585064 |
0.362 |
|
| 2003 |
Chui CO, Kim H, McVittie JP, Triplett BB, McIntyre PC, Saraswat KC. A novel self-aligned gate-last MOSFET process comparing high-κ candidates 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 464-465. DOI: 10.1109/ISDRS.2003.1272191 |
0.661 |
|
| 2003 |
Kim H, Chui CO, Saraswat KC, McIntyre PC. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy Applied Physics Letters. 83: 2647-2649. DOI: 10.1063/1.1613031 |
0.724 |
|
| 2003 |
Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644 |
0.72 |
|
| 2003 |
Lee S, Kim H, McIntyre PC, Saraswat KC, Byun J. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application Applied Physics Letters. 82: 2874-2876. DOI: 10.1063/1.1569985 |
0.639 |
|
| 2003 |
Kim H, McIntyre PC, Saraswat KC. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition Applied Physics Letters. 82: 106-108. DOI: 10.1063/1.1533117 |
0.595 |
|
| 2002 |
Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1: 241-6. PMID 12618786 DOI: 10.1038/Nmat769 |
0.441 |
|
| 1999 |
Kim H, Ko D, Bae D, Fujihara K, Kang H. The formation of Ti-polycide gate structure with high thermal stability using chemical-mechanical polishing (CMP) planarization technology Ieee Electron Device Letters. 20: 86-88. DOI: 10.1109/55.740660 |
0.35 |
|
| 1999 |
Lee N, Lee J, Kim H, Han C. High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N 2 O-plasma oxide Ieee Electron Device Letters. 20: 15-17. DOI: 10.1109/55.737559 |
0.353 |
|
| 1998 |
Lee N, Lee J, Kim H, Han C. High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N20-Plasma Oxide The Japan Society of Applied Physics. 1998: 142-143. DOI: 10.7567/Ssdm.1998.B-3-4 |
0.302 |
|
| 1997 |
Lee N, Lee J, Hur S, Kim H, Han C. Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma Ieee Electron Device Letters. 18: 486-488. DOI: 10.1109/55.624924 |
0.338 |
|
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