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Saptarshi Das, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Nanoscience, Materials Science Engineering, Electronics and Electrical Engineering
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Sebastian A, Pendurthi R, Choudhury TH, Redwing JM, Das S. Benchmarking monolayer MoS and WS field-effect transistors. Nature Communications. 12: 693. PMID 33514710 DOI: 10.1038/s41467-020-20732-w  0.342
2021 Wali A, Kundu S, Arnold AJ, Zhao G, Basu K, Das S. Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices. Acs Nano. PMID 33507060 DOI: 10.1021/acsnano.0c10651  0.319
2020 Arnold AJ, Schulman DS, Das S. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors. Acs Nano. PMID 33026795 DOI: 10.1021/acsnano.0c05572  0.323
2020 Singh VK, Pendurthi R, Nasr JR, Mamgain H, Tiwari RSS, Das S, Srivastava A. Study on the Growth Parameters, Electrical, and Optical Behaviors of 2D Tungsten Disulfide. Acs Applied Materials & Interfaces. PMID 32180391 DOI: 10.1021/Acsami.9B19820  0.408
2020 Sengupta P, Das S. Photon-assisted heat engines in the THz regime Journal of Applied Physics. 127: 24305. DOI: 10.1063/1.5132423  0.328
2020 Ghosh A, Noble J, Sebastian A, Das S, Liu Z. Digital holography for non-invasive quantitative imaging of two-dimensional materials Journal of Applied Physics. 127: 84901. DOI: 10.1063/1.5128135  0.348
2019 Das S, Dodda A, Das S. A biomimetic 2D transistor for audiomorphic computing. Nature Communications. 10: 3450. PMID 31371722 DOI: 10.1038/S41467-019-11381-9  0.352
2019 Zhang F, Lu Y, Schulman DS, Zhang T, Fujisawa K, Lin Z, Lei Y, Elias AL, Das S, Sinnott SB, Terrones M. Carbon doping of WS monolayers: Bandgap reduction and p-type doping transport. Science Advances. 5: eaav5003. PMID 31139746 DOI: 10.1126/Sciadv.Aav5003  0.313
2019 Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Defect-Controlled Nucleation and Orientation of WSe on hBN - A Route to Single Crystal Epitaxial Monolayers. Acs Nano. PMID 30758945 DOI: 10.1021/Acsnano.8B09230  0.317
2019 Arnold AJ, Shi T, Jovanovic I, Das S. Extraordinary Radiation Hardness of Atomically Thin MoS2. Acs Applied Materials & Interfaces. PMID 30715831 DOI: 10.1021/Acsami.8B18659  0.367
2018 Sebastian A, Zhang F, Dodda A, May-Rawding D, Liu H, Zhang T, Terrones M, Das S. Electrochemical Polishing of Two-Dimensional Materials. Acs Nano. PMID 30485063 DOI: 10.1021/Acsnano.8B08216  0.39
2018 Nasr JR, Schulman DS, Sebastian A, Horn MW, Das S. Mobility Deception in Nanoscale Transistors: An Untold Contact Story. Advanced Materials (Deerfield Beach, Fla.). e1806020. PMID 30430660 DOI: 10.1002/Adma.201806020  0.439
2018 Kumar A, Sebastian A, Das S, Ringe E. In-Situ Optical Tracking of Electroablation in 2D Transition Metal Dichalcogenides. Acs Applied Materials & Interfaces. PMID 30387342 DOI: 10.1021/Acsami.8B14585  0.356
2018 Patra TK, Zhang F, Schulman DS, Chan H, Cherukara MJ, Terrones M, Das S, Narayanan B, Sankaranarayanan SKRS. Defect Dynamics In 2-D MoS Probed By Using Machine Learning, Atomistic Simulations and High-Resolution Microscopy. Acs Nano. PMID 30074765 DOI: 10.1021/Acsnano.8B02844  0.312
2018 Sengupta P, Das S, Shi J. The electrothermal conductance and heat capacity of black phosphorus. The Journal of Chemical Physics. 148: 104701. PMID 29544322 DOI: 10.1063/1.5017682  0.311
2018 Schulman DS, Arnold AJ, Das S. Contact engineering for 2D materials and devices. Chemical Society Reviews. PMID 29498729 DOI: 10.1039/C7Cs00828G  0.388
2018 Cherukara MJ, Schulman DS, Sasikumar K, Arnold AJ, Chan H, Sadasivam S, Maser J, Cha W, Das S, Sankaranarayanan SKRS, Harder RJ. Three-dimensional Integrated X-ray diffraction imaging of native strain in multi-layered WSe2. Nano Letters. PMID 29451799 DOI: 10.1021/Acs.Nanolett.7B05441  0.359
2018 Yoon Y, Das S, Esseni D, Vittorio DD, Bhat N, Muneta I, Liang G, Schwierz F, Moshkalev SA. Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices Ieee Transactions On Electron Devices. 65: 4034-4039. DOI: 10.1109/Ted.2018.2867909  0.347
2018 Lin Z, Lei Y, Subramanian S, Briggs N, Wang Y, Lo C, Yalon E, Lloyd D, Wu S, Koski K, Clark R, Das S, Wallace RM, Kuech T, Bunch JS, et al. Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation Apl Materials. 6: 080701. DOI: 10.1063/1.5042598  0.308
2018 Simonson NA, Nasr JR, Subramanian S, Jariwala B, Zhao R, Das S, Robinson JA. Low-temperature metalorganic chemical vapor deposition of molybdenum disulfide on multicomponent glass substrates Flatchem. 11: 32-37. DOI: 10.1016/J.Flatc.2018.11.004  0.31
2017 Schulman DS, May-Rawding D, Zhang F, Buzzell D, Alem N, Das S. Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides. Acs Applied Materials & Interfaces. PMID 29278319 DOI: 10.1021/Acsami.7B17660  0.345
2017 Schulman DS, Sebastian A, Buzzell D, Huang YT, Arnold AJ, Das S. Facile Electrochemical Synthesis of 2D Monolayers for High Performance Thin Film Transistors. Acs Applied Materials & Interfaces. PMID 29210272 DOI: 10.1021/Acsami.7B14711  0.405
2017 Huang YT, Dodda A, Schulman DS, Sebastian A, Zhang F, Buzzell D, Terrones M, Feng SP, Das S. Anomalous Corrosion of Bulk Transition Metal Diselenides Leading to Stable Monolayers. Acs Applied Materials & Interfaces. PMID 29028313 DOI: 10.1021/Acsami.7B13107  0.318
2017 Schulman DS, Arnold AJ, Razavieh A, Nasr J, Das S. The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs Ieee Nanotechnology Magazine. 11: 6-17. DOI: 10.1109/Mnano.2017.2679240  0.364
2016 Das S. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current. Scientific Reports. 6: 34811. PMID 27721489 DOI: 10.1038/Srep34811  0.438
2016 Das S, Bera MK, Tong S, Narayanan B, Kamath G, Mane A, Paulikas AP, Antonio MR, Sankaranarayanan SK, Roelofs AK. A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials. Scientific Reports. 6: 28195. PMID 27323877 DOI: 10.1038/Srep28195  0.368
2016 Das S, Dubey M, Roelofs A. Erratum: “High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors” [Appl. Phys. Lett. 105, 083511 (2014)] Applied Physics Letters. 108: 069902. DOI: 10.1063/1.4941819  0.323
2015 Bhimanapati GR, Lin Z, Meunier V, Jung Y, Cha JJ, Das S, Xiao D, Son Y, Strano MS, Cooper VR, Liang L, Louie SG, Ringe E, Zhou W, Sumpter BG, et al. Recent Advances in Two-Dimensional Materials Beyond Graphene. Acs Nano. PMID 26544756 DOI: 10.1021/Acsnano.5B05556  0.392
2015 Das S, Robinson JA, Dubey M, Terrones H, Terrones M. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids Annual Review of Materials Research. 45: 1-27. DOI: 10.1146/Annurev-Matsci-070214-021034  0.392
2015 Das S, Zhang W, Thoutam LR, Xiao Z, Hoffmann A, Demarteau M, Roelofs A. A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor Ieee Electron Device Letters. 36: 621-623. DOI: 10.1109/Led.2015.2421948  0.336
2015 Das S, Demarteau M, Roelofs A. Nb-doped single crystalline MoS2 field effect transistor Applied Physics Letters. 106. DOI: 10.1063/1.4919565  0.414
2015 Das SR, Kwon J, Prakash A, Delker CJ, Das S, Janes DB. Low-frequency noise in MoSe2 field effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4913714  0.383
2014 Das S, Demarteau M, Roelofs A. Ambipolar phosphorene field effect transistor. Acs Nano. 8: 11730-8. PMID 25329532 DOI: 10.1021/Nn505868H  0.452
2014 Das S, Zhang W, Demarteau M, Hoffmann A, Dubey M, Roelofs A. Tunable transport gap in phosphorene. Nano Letters. 14: 5733-9. PMID 25111042 DOI: 10.1021/Nl5025535  0.4
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.594
2014 Das S, Gulotty R, Sumant AV, Roelofs A. All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Letters. 14: 2861-6. PMID 24754722 DOI: 10.1021/Nl5009037  0.47
2014 Das S, Prakash A, Salazar R, Appenzeller J. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. Acs Nano. 8: 1681-9. PMID 24392853 DOI: 10.1021/Nn406603H  0.591
2014 Prakash A, Das S, Mehta R, Chen Z, Appenzeller J. Ionic gated WSe2 FETs: Towards transparent Schottky barriers Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2014.6872331  0.592
2014 Das S, Dubey M, Roelofs A. High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4894426  0.418
2014 Gulotty R, Das S, Liu Y, Sumant AV. Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area Carbon. 77: 341-350. DOI: 10.1016/J.Carbon.2014.05.037  0.318
2013 Das S, Appenzeller J. Where does the current flow in two-dimensional layered systems? Nano Letters. 13: 3396-402. PMID 23802773 DOI: 10.1021/Nl401831U  0.591
2013 Das S, Chen HY, Penumatcha AV, Appenzeller J. High performance multilayer MoS2 transistors with scandium contacts. Nano Letters. 13: 100-5. PMID 23240655 DOI: 10.1021/Nl303583V  0.679
2013 Das S, Appenzeller J. Evaluating the scalability of multilayer MoS2 transistors Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2013.6633839  0.501
2013 Das S, Appenzeller J. WSe2 field effect transistors with enhanced ambipolar characteristics Applied Physics Letters. 103. DOI: 10.1063/1.4820408  0.606
2013 Das S, Appenzeller J. Cover Picture: Screening and interlayer coupling in multilayer MoS2(Phys. Status Solidi RRL 4/2013) Physica Status Solidi (Rrl) - Rapid Research Letters. 7: n/a-n/a. DOI: 10.1002/Pssr.201390010  0.497
2013 Das S, Appenzeller J. Screening and interlayer coupling in multilayer MoS2 Physica Status Solidi - Rapid Research Letters. 7: 268-273. DOI: 10.1002/Pssr.201307015  0.607
2012 Das S, Appenzeller J. On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application Organic Electronics: Physics, Materials, Applications. 13: 3326-3332. DOI: 10.1016/J.Orgel.2012.09.036  0.567
2011 Das S, Appenzeller J. FeTRAM. An organic ferroelectric material based novel random access memory cell. Nano Letters. 11: 4003-7. PMID 21859101 DOI: 10.1021/Nl2023993  0.551
2011 Das S, Appenzeller J. On the importance of bandgap formation in graphene for analog device applications Ieee Transactions On Nanotechnology. 10: 1093-1098. DOI: 10.1109/Tnano.2011.2109007  0.58
2011 Smith JT, Sandow C, Das S, Minamisawa RA, Mantl S, Appenzeller J. Silicon nanowire tunneling field-effect transistor arrays: Improving subthreshold performance using excimer laser annealing Ieee Transactions On Electron Devices. 58: 1822-1829. DOI: 10.1109/Ted.2011.2135355  0.58
2011 Das S, Appenzeller J. An all-graphene radio frequency low noise amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940628  0.471
2011 Smith JT, Das S, Appenzeller J. Broken-gap tunnel MOSFET: A constant-slope Sub-60-mV/decade transistor Ieee Electron Device Letters. 32: 1367-1369. DOI: 10.1109/Led.2011.2162220  0.609
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