Year |
Citation |
Score |
2021 |
Wang K, Zhang L, Nguyen GD, Sang X, Liu C, Yu Y, Ko W, Unocic RR, Puretzky AA, Rouleau CM, Geohegan DB, Fu L, Duscher G, Li AP, Yoon M, et al. Selective Antisite Defect Formation in WS Monolayers via Reactive Growth on Dilute W-Au Alloy Substrates. Advanced Materials (Deerfield Beach, Fla.). e2106674. PMID 34738669 DOI: 10.1002/adma.202106674 |
0.3 |
|
2020 |
Gu Y, Cai H, Dong J, Yu Y, Hoffman AN, Liu C, Oyedele AD, Lin YC, Ge Z, Puretzky AA, Duscher G, Chisholm MF, Rack PD, Rouleau CM, Gai Z, et al. Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition. Advanced Materials (Deerfield Beach, Fla.). e1906238. PMID 32173918 DOI: 10.1002/Adma.201906238 |
0.373 |
|
2020 |
Lin YC, Liu C, Yu Y, Zarkadoula E, Yoon M, Puretzky AA, Liang L, Kong X, Gu Y, Strasser A, Meyer HM, Lorenz M, Chisholm MF, Ivanov IN, Rouleau CM, ... Duscher G, et al. Low Energy Implantation into Transition Metal Dichalcogenide Monolayers to Form Janus Structures. Acs Nano. PMID 32150384 DOI: 10.1021/Acsnano.9B10196 |
0.401 |
|
2020 |
Lin Y, Liu C, Yu Y, Zarkadoula E, Yoon M, Puretzky AA, Liang L, Kong X, Gu Y, Strasser A, Meyer HM, Lorenz M, Chisholm MF, Ivanov IN, Rouleau CM, ... Duscher G, et al. LowEnergy Implantation into Transition-Metal DichalcogenideMonolayers to Form Janus Structures Acs Nano. DOI: 10.1021/Acsnano.9B10196.S004 |
0.402 |
|
2019 |
Liu P, Tian H, Windl W, Gu G, Duscher G, Wu Y, Zhao M, Guo J, Xu B, Liu L. Direct imaging of the nitrogen-rich edge in monolayer hexagonal boron nitride and its band structure tuning. Nanoscale. PMID 31642456 DOI: 10.1039/C9Nr07147D |
0.379 |
|
2019 |
Lee U, Zheleva T, Lelis A, Duscher G, Liu F, Das M, Scofield J. Analytical and Structural Investigations of the Metal-Enhanced Oxidation of Sic-MOS Structures Ecs Transactions. 13: 99-109. DOI: 10.1149/1.2913085 |
0.575 |
|
2019 |
Liu C, Wu Y, Hu Z, Busche JA, Beutler EK, Montoni NP, Moore TM, Magel GA, Camden JP, Masiello DJ, Duscher G, Rack PD. Continuous Wave Resonant Photon Stimulated Electron Energy-Gain and Electron Energy-Loss Spectroscopy of Individual Plasmonic Nanoparticles Acs Photonics. 6: 2499-2508. DOI: 10.1021/Acsphotonics.9B00830 |
0.32 |
|
2018 |
Tian M, Dyck O, Ge J, Duscher G. Measuring the areal density of nanomaterials by electron energy-loss spectroscopy. Ultramicroscopy. 196: 154-160. PMID 30391804 DOI: 10.1016/J.Ultramic.2018.10.009 |
0.336 |
|
2018 |
Somnath S, Smith CR, Kalinin SV, Chi M, Borisevich A, Cross N, Duscher G, Jesse S. Feature extraction via similarity search: application to atom finding and denoising in electron and scanning probe microscopy imaging. Advanced Structural and Chemical Imaging. 4: 3. PMID 29568723 DOI: 10.1186/S40679-018-0052-Y |
0.331 |
|
2018 |
Agarwal S, Duscher G, Zhao Y, Crespillo M, Katoh Y, Weber W. Multiscale characterization of irradiation behaviour of ion-irradiated SiC/SiC composites Acta Materialia. 161: 207-220. DOI: 10.1016/J.Actamat.2018.09.012 |
0.362 |
|
2017 |
Mohammadi F, Schmitzer H, Kunert G, Hommel D, Ge J, Duscher G, Langbein W, Wagner HP. Emission dynamics of hybrid plasmonic gold/organic GaN nanorods. Nanotechnology. PMID 29064371 DOI: 10.1088/1361-6528/Aa95A3 |
0.343 |
|
2017 |
Mahjouri-Samani M, Tian M, Puretzky AA, Chi M, Wang K, Duscher G, Rouleau CM, Eres G, Yoon M, Lasseter JC, Xiao K, Geohegan DB. Non-Equilibrium Synthesis of TiO2 Nanoparticle "Building Blocks" for Crystal Growth by Sequential Attachment in Pulsed Laser Deposition. Nano Letters. PMID 28692299 DOI: 10.1021/Acs.Nanolett.7B01047 |
0.308 |
|
2017 |
Tian M, Mahjouri-Samani M, Wang K, Puretzky AA, Geohegan DB, Tennyson WD, Cross N, Rouleau CM, Zawodzinski TA, Duscher G, Eres G. Black anatase formation by annealing of amorphous nanoparticles and the role of the Ti2O3 shell in self-organized crystallization by particle attachment. Acs Applied Materials & Interfaces. PMID 28586205 DOI: 10.1021/Acsami.7B02764 |
0.327 |
|
2017 |
Wang K, Cross N, Boulesbaa A, Pudasaini PR, Tian M, Mahjouri-Samani M, Oxley MP, Rouleau CM, Puretzky AA, Rack PD, Xiao K, Yoon M, Eres G, Duscher G, Geohegan DB. Correlating the optical properties of WS2 monolayers grown by CVD with isoelectronic Mo doping level (Conference Presentation) Proceedings of Spie. 10093: 1009305. DOI: 10.1117/12.2256543 |
0.392 |
|
2017 |
Mahjouri-Samani M, Rouleau CM, Puretzky AA, Eres G, Xiao K, Duscher G, Yoon M, Geohegan DB. New approaches for synthesis and processing of 2D materials (Conference Presentation) Proceedings of Spie. 10093: 1009303. DOI: 10.1117/12.2253430 |
0.365 |
|
2017 |
Oxley MP, Cross NG, Duscher G, Allen LJ, Chisholm MF. Quantification of Low Voltage Images of 2-dimensional Materials in Aberration Corrected Scanning Transmission Electron Microscopy. Microscopy and Microanalysis. 23: 464-465. DOI: 10.1017/S1431927617003002 |
0.316 |
|
2017 |
Liu P, Deng B, Liang Z, Duscher G, Guo J. High efficiency core-loss EELS analyzing from the viewpoint of chemometrics Materials Characterization. 129: 313-318. DOI: 10.1016/J.Matchar.2017.05.020 |
0.394 |
|
2017 |
Mohsin A, Cross NG, Liu L, Liu P, Duscher G, Gu G. Experimentally determined edge orientation of triangular crystals of hexagonal boron nitride Physica Status Solidi (B). 254: 1700069. DOI: 10.1002/Pssb.201700069 |
0.31 |
|
2017 |
Stanford MG, Pudasaini PR, Gallmeier ET, Cross N, Liang L, Oyedele A, Duscher G, Mahjouri‐Samani M, Wang K, Xiao K, Geohegan DB, Belianinov A, Sumpter BG, Rack PD. High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits Advanced Functional Materials. 27: 1702829. DOI: 10.1002/Adfm.201702829 |
0.394 |
|
2016 |
Yang B, Dyck O, Ming W, Du MH, Das S, Rouleau CM, Duscher G, Geohegan DB, Xiao K. Observation of Nanoscale Morphological and Structural Degradation in Perovskite Solar Cells by in Situ TEM. Acs Applied Materials & Interfaces. 8: 32333-32340. PMID 27933837 DOI: 10.1021/Acsami.6B11341 |
0.327 |
|
2016 |
Kaveh M, Gao Q, Jagadish C, Ge J, Duscher G, Wagner HP. Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer. Nanotechnology. 27: 485204. PMID 27811405 DOI: 10.1088/0957-4484/27/48/485204 |
0.339 |
|
2016 |
Mahjouri-Samani M, Liang L, Oyedele AD, Kim YS, Tian M, Cross N, Wang K, Lin MW, Boulesbaa A, Rouleau CM, Puretzky AA, Xiao K, Yoon M, Eres G, Duscher G, et al. Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type in Monolayer MoSe2-x Crystals. Nano Letters. PMID 27416103 DOI: 10.1021/Acs.Nanolett.6B02263 |
0.36 |
|
2016 |
Wang K, Huang B, Tian M, Ceballos F, Lin MW, Mahjouri-Samani M, Boulesbaa A, Puretzky AA, Rouleau CM, Yoon M, Zhao H, Xiao K, Duscher G, Geohegan DB. Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy. Acs Nano. PMID 27309275 DOI: 10.1021/Acsnano.6B01486 |
0.348 |
|
2016 |
Stanford MG, Pudasaini PR, Belianinov A, Cross N, Noh JH, Koehler MR, Mandrus DG, Duscher G, Rondinone AJ, Ivanov IN, Ward TZ, Rack PD. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions. Scientific Reports. 6: 27276. PMID 27263472 DOI: 10.1038/Srep27276 |
0.345 |
|
2016 |
Chen C, Zhang Y, Wang Y, Crespillo M, Fontana C, Graham J, Duscher G, Shannon S, Weber W. Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C Journal of Nuclear Materials. 472: 153-160. DOI: 10.1016/J.Jnucmat.2016.01.029 |
0.323 |
|
2016 |
Li X, Puretzky AA, Sang X, KC S, Tian M, Ceballos F, Mahjouri-Samani M, Wang K, Unocic RR, Zhao H, Duscher G, Cooper VR, Rouleau CM, Geohegan DB, Xiao K. Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2 Advanced Functional Materials. 27: 1603850. DOI: 10.1002/Adfm.201603850 |
0.375 |
|
2015 |
Malasi A, Taz H, Farah A, Patel M, Lawrie B, Pooser R, Baddorf A, Duscher G, Kalyanaraman R. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility. Scientific Reports. 5: 18157. PMID 26670421 DOI: 10.1038/Srep18157 |
0.342 |
|
2015 |
Yang B, Dyck O, Poplawsky J, Keum J, Das S, Puretzky A, Aytug T, Joshi PC, Rouleau CM, Duscher G, Geohegan DB, Xiao K. Controllable Growth of Perovskite Films by Room-Temperature Air Exposure for Efficient Planar Heterojunction Photovoltaic Cells. Angewandte Chemie (International Ed. in English). PMID 26486584 DOI: 10.1002/Anie.201505882 |
0.331 |
|
2015 |
Tian M, Mahjouri-Samani M, Eres G, Sachan R, Yoon M, Chisholm MF, Wang K, Puretzky AA, Rouleau CM, Geohegan DB, Duscher G. Structure and Formation Mechanism of Black TiO2 Nanoparticles. Acs Nano. PMID 26393371 DOI: 10.1021/Acsnano.5B04712 |
0.364 |
|
2015 |
Das S, Keum JK, Browning JF, Gu G, Yang B, Dyck O, Do C, Chen W, Chen J, Ivanov IN, Hong K, Rondinone AJ, Joshi PC, Geohegan DB, Duscher G, et al. Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures. Nanoscale. PMID 26220775 DOI: 10.1039/C5Nr03332B |
0.33 |
|
2015 |
Yang B, Dyck O, Poplawsky J, Keum J, Puretzky A, Das S, Ivanov I, Rouleau C, Duscher G, Geohegan D, Xiao K. Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions. Journal of the American Chemical Society. 137: 9210-3. PMID 26156790 DOI: 10.1021/Jacs.5B03144 |
0.33 |
|
2015 |
Dyck O, Hu S, Das S, Keum J, Xiao K, Khomami B, Duscher G. Quantitative phase fraction detection in organic photovoltaic materials through EELS imaging Polymers. 7: 2446-2460. DOI: 10.3390/Polym7111523 |
0.315 |
|
2015 |
Li G, Cherqui C, Bigelow NW, Duscher G, Straney PJ, Millstone JE, Masiello DJ, Camden JP. Nanoscopic imaging of energy transfer from single plasmonic particles to semiconductor substrates via STEM/EELS Microscopy and Microanalysis. 21: 1909-1910. DOI: 10.1017/S1431927615010326 |
0.311 |
|
2015 |
Cross N, Liu L, Mohsin A, Gu G, Duscher G. Peculiar Plasmon Peak Position in Electron Energy Loss Spectrum of Hexagonal Boron Nitride/Graphene Double Layer Microscopy and Microanalysis. 21: 985-986. DOI: 10.1017/S1431927615005723 |
0.301 |
|
2015 |
Li G, Abbott JKC, Brasfield JD, Liu P, Dale A, Duscher G, Rack PD, Feigerle CS. Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide Applied Surface Science. 327: 7-12. DOI: 10.1016/J.Apsusc.2014.11.037 |
0.348 |
|
2015 |
Malasi A, Ge J, Carr C, Garcia H, Duscher G, Kalyanaraman R. Two-Dimensionally Ordered Plasmonic and Magnetic Nanostructures on Transferable Electron-Transparent Substrates Particle & Particle Systems Characterization. 32: 970-978. DOI: 10.1002/Ppsc.201500048 |
0.312 |
|
2014 |
Liu L, Siegel DA, Chen W, Liu P, Guo J, Duscher G, Zhao C, Wang H, Wang W, Bai X, McCarty KF, Zhang Z, Gu G. Unusual role of epilayer-substrate interactions in determining orientational relations in van der Waals epitaxy. Proceedings of the National Academy of Sciences of the United States of America. 111: 16670-5. PMID 25385622 DOI: 10.1073/Pnas.1405613111 |
0.305 |
|
2014 |
Mahjouri-Samani M, Tian M, Wang K, Boulesbaa A, Rouleau CM, Puretzky AA, McGuire MA, Srijanto BR, Xiao K, Eres G, Duscher G, Geohegan DB. Digital transfer growth of patterned 2D metal chalcogenides by confined nanoparticle evaporation. Acs Nano. 8: 11567-75. PMID 25343499 DOI: 10.1021/Nn5048124 |
0.324 |
|
2014 |
Wang C, Duscher G, Paddison SJ. Electron energy loss spectroscopy of polytetrafluoroethylene: experiment and first principles calculations. Microscopy (Oxford, England). 63: 73-83. PMID 24296695 DOI: 10.1093/Jmicro/Dft046 |
0.314 |
|
2014 |
Rouleau CM, Tian M, Puretzky AA, Mahjouri-Samani M, Duscher G, Geohegan DB. Catalytic nanoparticles for carbon nanotube growth synthesized by through thin film femtosecond laser ablation Proceedings of Spie - the International Society For Optical Engineering. 8969. DOI: 10.1117/12.2045951 |
0.311 |
|
2014 |
Liu P, Li G, Duscher G, Sharma YK, Ahyi AC, Isaacs-Smith T, Williams JR, Dhar S. Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4897377 |
0.444 |
|
2014 |
Gonzalez CM, Timilsina R, Li G, Duscher G, Rack PD, Slingenbergh W, Van Dorp WF, De Hosson JTM, Klein KL, Wu HM, Stern LA. Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868027 |
0.355 |
|
2014 |
Hu S, Dyck O, Chen H, Hsiao YC, Hu B, Duscher G, Dadmun M, Khomami B. The impact of selective solvents on the evolution of structure and function in solvent annealed organic photovoltaics Rsc Advances. 4: 27931-27938. DOI: 10.1039/C4Ra02257B |
0.353 |
|
2014 |
Gu Y, Wang C, Liu F, Chen J, Dyck OE, Duscher G, Russell TP. Guided crystallization of P3HT in ternary blend solar cell based on P3HT:PCPDTBT:PCBM Energy and Environmental Science. 7: 3782-3790. DOI: 10.1039/C4Ee02004A |
0.329 |
|
2014 |
Liu P, Guo J, Liu L, Windl W, Gu G, Duscher G. Direct Observation of Defects in Hexagonal Boron Nitride Monolayers Microscopy and Microanalysis. 20: 1738-1739. DOI: 10.1017/S1431927614010423 |
0.335 |
|
2014 |
Dyck O, Hu S, Khomami B, Duscher G. Electron energy-loss spectroscopic imaging for phase detection in organic photovoltaics Microscopy and Microanalysis. 20: 538-539. DOI: 10.1017/S1431927614004413 |
0.329 |
|
2014 |
Liu F, Yang G, Duscher G. Chemical composition study of high-k
La-silicate gate stacks at sub-nanometer scale Physica Status Solidi (a). 211: 2537-2540. DOI: 10.1002/Pssa.201431143 |
0.693 |
|
2014 |
Sachan R, Malasi A, Yadavali S, Griffey B, Dunlap J, Duscher G, Kalyanaraman R. Laser-Induced Self-Assembled Nanostructures on Electron-Transparent Substrates Particle & Particle Systems Characterization. 32: 476-482. DOI: 10.1002/Ppsc.201400183 |
0.351 |
|
2014 |
Mahjouri-Samani M, Gresback R, Tian M, Wang K, Puretzky AA, Rouleau CM, Eres G, Ivanov IN, Xiao K, McGuire MA, Duscher G, Geohegan DB. Pulsed laser deposition of photoresponsive two-dimensional gase nanosheet networks Advanced Functional Materials. 24: 6365-6371. DOI: 10.1002/Adfm.201401440 |
0.307 |
|
2013 |
Chandrakumar KR, Readle JD, Rouleau C, Puretzky A, Geohegan DB, More K, Krishnan V, Tian M, Duscher G, Sumpter B, Irle S, Morokuma K. High-temperature transformation of Fe-decorated single-wall carbon nanohorns to nanooysters: a combined experimental and theoretical study. Nanoscale. 5: 1849-57. PMID 23223914 DOI: 10.1039/C2Nr31788E |
0.305 |
|
2013 |
Sachan R, Gonzalez C, Dyck O, Wu Y, Garcia H, Pennycook SJ, Rack PD, Duscher G, Kalyanaraman R. Enhanced absorption in ultrathin Si by NiSi2nanoparticles Nanomaterials and Energy. 2: 11-19. DOI: 10.1680/Nme.12.00020 |
0.381 |
|
2013 |
Yang Z, Chisholm MF, Duscher G, Ma X, Pennycook SJ. Direct observation of dislocation dissociation and Suzuki segregation in a Mg–Zn–Y alloy by aberration-corrected scanning transmission electron microscopy Acta Materialia. 61: 350-359. DOI: 10.1016/J.Actamat.2012.09.067 |
0.34 |
|
2012 |
Chisholm MF, Duscher G, Windl W. Oxidation resistance of reactive atoms in graphene. Nano Letters. 12: 4651-5. PMID 22906097 DOI: 10.1021/Nl301952E |
0.341 |
|
2012 |
Guo J, Morris JR, Ihm Y, Contescu CI, Gallego NC, Duscher G, Pennycook SJ, Chisholm MF. Topological defects: origin of nanopores and enhanced adsorption performance in nanoporous carbon. Small (Weinheim An Der Bergstrasse, Germany). 8: 3283-8. PMID 22893594 DOI: 10.1002/Smll.201200894 |
0.343 |
|
2012 |
Sachan R, Gonzalez C, Dyck O, Rack P, Duscher G, Kalyanaraman R, Garcia H. Absorption enhancement by Ni-silicide nanostructures embedded in ultra-thin Si films Microscopy and Microanalysis. 18: 1862-1863. DOI: 10.1017/S1431927612011166 |
0.36 |
|
2012 |
Guo J, Morris J, Contescu C, Gallego N, Pennycook S, Chisholm M, Ihm Y, Duscher G. Atomic-scale imaging of graphene-based nanoporous carbon Microscopy and Microanalysis. 18: 1528-1529. DOI: 10.1017/S143192761200949X |
0.313 |
|
2012 |
Sina Y, McHargue CJ, Duscher G, Zhang Y. The effect of zirconium implantation on the structure of sapphire Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 286: 190-195. DOI: 10.1016/J.Nimb.2011.12.026 |
0.405 |
|
2011 |
Duscher G, Chisholm M, Puretzky A, Rouleau C, Geohegan D. Atomic Structure of Single Walled Carbon Nanohorns Microscopy and Microanalysis. 17: 1510-1511. DOI: 10.1017/S1431927611008427 |
0.33 |
|
2011 |
Chisholm M, Duscher G, Windl W. Aberration-Corrected STEM Imaging and Spectroscopy of Single-Layered Materials Microscopy and Microanalysis. 17: 1260-1261. DOI: 10.1017/S1431927611007173 |
0.322 |
|
2010 |
Shen X, Oxley MP, Puzyrev Y, Tuttle BR, Duscher G, Pantelides ST. Excess carbon in silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3517142 |
0.397 |
|
2009 |
Dang H, Gudipati R, Liu Y, Li Y, Liu Y, Peterson HL, Chisholm MF, Biggerstaff T, Duscher G, Wang S. Carbon Clusters as Possible Defects in the SiC–SiO2 Interface Journal of Computational and Theoretical Nanoscience. 6: 1305-1310. DOI: 10.1166/Jctn.2009.1179 |
0.689 |
|
2009 |
Biggerstaff TL, Reynolds CL, Zheleva T, Lelis A, Habersat D, Haney S, Ryu SH, Agarwal A, Duscher G. Relationship between 4H-SiC/SiO2 transition layer thickness and mobility Applied Physics Letters. 95. DOI: 10.1063/1.3144272 |
0.423 |
|
2008 |
Pei L, Duscher G, Steen C, Pichler P, Ryssel H, Napolitani E, De Salvador D, Piro AM, Terrasi A, Severac F, Cristiano F, Ravichandran K, Gupta N, Windl W. Detailed arsenic concentration profiles at Si/SiO2 interfaces Journal of Applied Physics. 104: 043507. DOI: 10.1063/1.2967713 |
0.775 |
|
2008 |
Steen C, Martinez-Limia A, Pichler P, Ryssel H, Paul S, Lerch W, Pei L, Duscher G, Severac F, Cristiano F, Windl W. Distribution and segregation of arsenic at theSiO2/Si interface Journal of Applied Physics. 104: 023518. DOI: 10.1063/1.2956700 |
0.778 |
|
2008 |
Zheleva T, Lelis A, Duscher G, Liu F, Levin I, Das M. Transition layers at the SiO2∕SiC interface Applied Physics Letters. 93: 022108. DOI: 10.1063/1.2949081 |
0.689 |
|
2008 |
Liu F, Collazo R, Mita S, Duscher G, Pennycook S. Erratum: “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence” [Appl. Phys. Lett. 91, 203115 (2007)] Applied Physics Letters. 92: 029901. DOI: 10.1063/1.2836941 |
0.6 |
|
2008 |
Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/Adma.200702522 |
0.646 |
|
2008 |
Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/Adma.200701288 |
0.631 |
|
2007 |
Steen C, Pichler P, Ryssel H, Pei L, Duscher G, Werner M, van den Berg JA, Windl W. Characterization of the Segregation of Arsenic at the Interface SiO2/Si Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F08-02 |
0.784 |
|
2007 |
Zhao W, Duscher G, Zikry MA, Rozgonyi G. Reliable local strain characterization on Si/SiGe structures in biaxial tension Materials Research Society Symposium Proceedings. 958: 151-157. DOI: 10.1557/Proc-0958-L04-08 |
0.308 |
|
2007 |
Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748 |
0.638 |
|
2007 |
Liu F, Duscher G. Thermal annealing effect on the interface structure of high-κ LaScO3 on silicon Applied Physics Letters. 91: 152906. DOI: 10.1063/1.2799177 |
0.625 |
|
2007 |
Liu F, Duscher G. Chemical composition changes across the interface of amorphous LaScO3 on Si (001) Applied Physics Letters. 91: 152901. DOI: 10.1063/1.2798246 |
0.695 |
|
2007 |
Zhao W, Duscher G, Rozgonyi G, Zikry MA, Chopra S, Ozturk MC. Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures Applied Physics Letters. 90. DOI: 10.1063/1.2738188 |
0.304 |
|
2006 |
Pantelides ST, Wang S, Franceschetti A, Buczko R, Ventra MD, Rashkeev SN, Tsetseris L, Evans MH, Batyrev IG, Feldman LC, Dhar S, McDonald K, Weller RA, Schrimpf RD, Fleetwood DM, ... ... Duscher G, et al. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances Materials Science Forum. 935-948. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.935 |
0.433 |
|
2006 |
Yarmolenko S, Neralla S, Kumar D, Sankar J, Liu F, Duscher G. Role of Fe and Ni nanoparticles on mechanical properties of alumina thin films deposited by laser ablation Materials Research Society Symposium Proceedings. 890: 189-194. DOI: 10.1557/Proc-0890-Y08-38 |
0.626 |
|
2006 |
Wang C, Shutthanandan V, Zhang Y, Thevuthasan S, Thomas L, Weber W, Duscher G. Atomic level imaging of Au nanocluster dispersed in TiO2 and SrTiO3 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 242: 380-382. DOI: 10.1016/J.Nimb.2005.08.144 |
0.381 |
|
2005 |
Shao R, Chisholm MF, Duscher G, Bonnell DA. Low-temperature resistance anomaly at SrTiO3 grain boundaries: evidence for an interface-induced phase transition. Physical Review Letters. 95: 197601. PMID 16384023 DOI: 10.1103/Physrevlett.95.197601 |
0.344 |
|
2005 |
Yarmolenko S, Neralla S, Kumar D, Sankar J, Liu F, Duscher G. Role of Fe and Ni Nanoparticles on Mechanical Properties of Alumina Thin Films deposited by Laser Ablation Mrs Proceedings. 890. DOI: 10.1557/PROC-0890-Y08-38 |
0.593 |
|
2005 |
Wang C, Pan X, Gu H, Duscher G, Hoffmann MJ, Cannon RM, Ruhle M. Transient Growth Bands in Silicon Nitride Cooled in Rare-Earth-Based Glass Journal of the American Ceramic Society. 80: 1397-1404. DOI: 10.1111/J.1151-2916.1997.Tb02997.X |
0.359 |
|
2005 |
Wang CM, Zhang Y, Shutthanandan V, Baer DR, Weber WJ, Thomas LE, Thevuthasan S, Duscher G. Self-assembling of nanocavities inTiO2dispersed with Au nanoclusters Physical Review B. 72. DOI: 10.1103/Physrevb.72.245421 |
0.351 |
|
2004 |
Duscher G, Chisholm MF, Alber U, Rühle M. Bismuth-induced embrittlement of copper grain boundaries. Nature Materials. 3: 621-6. PMID 15322533 DOI: 10.1038/Nmat1191 |
0.328 |
|
2004 |
Stoddard NG, Duscher G, Windl W, Rozgonyi GA. Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C3.9 |
0.416 |
|
2004 |
Windl W, Liang T, Lopatin S, Duscher G. Investigation of Nanostructured Germanium/Silicon Dioxide Interfaces Journal of Computational and Theoretical Nanoscience. 1: 286-295. DOI: 10.1166/Jctn.2004.030 |
0.698 |
|
2004 |
Browning ND, Buban JP, Moltaji HO, Duscher G. Investigating the Structure-Property Relationships at Grain Boundaries in MgO Using Bond-Valence Pair Potentials and Multiple Scattering Analysis Journal of the American Ceramic Society. 82: 366-372. DOI: 10.1111/J.1551-2916.1999.Tb20071.X |
0.353 |
|
2004 |
Wang CM, Shutthanandan V, Zhang Y, Thevuthasan S, Duscher G. Direct observation of substitutional Au atoms inSrTiO3 Physical Review B. 70. DOI: 10.1103/Physrevb.70.172201 |
0.39 |
|
2004 |
Wang CM, Shutthanandan V, Zhang Y, Thomas LE, Baer DR, Thevuthasan S, Duscher G. Precipitation of Au nanoclusters in SrTiO3 by ion implantation Journal of Applied Physics. 95: 5060-5068. DOI: 10.1063/1.1691187 |
0.366 |
|
2004 |
Kvit A, Karoui A, Duscher G, Rozgonyi GA. "Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers Applied Physics Letters. 84: 1889-1891. DOI: 10.1063/1.1669069 |
0.369 |
|
2004 |
Lopatin S, Duscher G. Electrically Active Dislocations at the Si/GaAs Interface Microscopy and Microanalysis. 10: 336-337. DOI: 10.1017/S1431927604882783 |
0.378 |
|
2004 |
Windl W, Liang T, Lopatin S, Duscher G. Modeling and characterization of atomically sharp “perfect” Ge/SiO2 interfaces Materials Science and Engineering B-Advanced Functional Solid-State Materials. 114: 156-161. DOI: 10.1016/J.Mseb.2004.07.041 |
0.701 |
|
2003 |
Pennycook SJ, Lupini AR, Kadavanich A, McBride JR, Rosenthal SJ, Puetter RC, Yahil A, Krivanek OL, Dellby N, Nellist PDL, Duscher G, Wang LG, Pantelides ST. Aberration-corrected scanning transmission electron microscopy: The potential for nano- and interface science Zeitschrift Fuer Metallkunde/Materials Research and Advanced Techniques. 94: 350-357. DOI: 10.3139/146.030350 |
0.422 |
|
2003 |
Stoddard N, Karoui A, Duscher G, Kvit A, Rozgonyi G. In Situ Point Defect Generation and Agglomeration during Electron-Beam Irradiation of Nitrogen-Doped Czochralski Silicon Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1614471 |
0.351 |
|
2003 |
Kvit A, Yankov RA, Duscher G, Rozgonyi G, Glasko JM. Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon Applied Physics Letters. 83: 1367-1369. DOI: 10.1063/1.1601678 |
0.385 |
|
2003 |
Gupta A, Wang H, Kvit A, Duscher G, Narayan J. Effect of microstructure on diffusion of copper in TiN films Journal of Applied Physics. 93: 5210-5214. DOI: 10.1063/1.1566472 |
0.344 |
|
2003 |
Windl W, Liang T, Lopatin S, Duscher G. Atomistic Modeling of the Detailed Structure of Si/SiO2 Interfaces Using AIDATEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy) Microscopy and Microanalysis. 9: 826-827. DOI: 10.1017/S1431927603444139 |
0.425 |
|
2003 |
Lopatin S, Duscher G, Windl W. Atomic Resolution Z-contrast Imaging and EELS: Application for Ge/SiO2 Interface Microscopy and Microanalysis. 9: 818-819. DOI: 10.1017/S1431927603444097 |
0.684 |
|
2003 |
Rozgonyi GA, Karoui A, Kvit A, Duscher G. Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon Microelectronic Engineering. 66: 305-313. DOI: 10.1016/S0167-9317(02)00923-1 |
0.416 |
|
2002 |
Lopatin S, Duscher G, Pennycook SJ, Chisholm MF. Z-contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M1.6 |
0.724 |
|
2002 |
Kvit A, Duscher G, Jin C, Narayan J. The Local Electronic structure at Grain Boundaries and Hetero- Interfaces in ZnO Thin Films Grown by Laser Deposition. Mrs Proceedings. 727. DOI: 10.1557/PROC-727-R8.8 |
0.301 |
|
2002 |
Kumar D, Pennycook SJ, Lupini A, Duscher G, Tiwari A, Narayan J. Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix Applied Physics Letters. 81: 4204-4206. DOI: 10.1063/1.1525052 |
0.375 |
|
2002 |
Lopatin S, Pennycook SJ, Narayan J, Duscher G. Z-contrast imaging of dislocation cores at the GaAs/Si interface Applied Physics Letters. 81: 2728-2730. DOI: 10.1063/1.1511808 |
0.7 |
|
2002 |
Lopatin S, Narayan J, Duscher G. Z-Contrast Imaging of Dislocation Cores at the Si/GaAs Interface Microscopy and Microanalysis. 8: 1604-1605. DOI: 10.1017/S1431927602104600 |
0.683 |
|
2001 |
Kim M, Duscher G, Browning ND, Sohlberg K, Pantelides ST, Pennycook SJ. Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3. Physical Review Letters. 86: 4056-9. PMID 11328094 DOI: 10.1103/Physrevlett.86.4056 |
0.326 |
|
2001 |
Duscher G, Buczko R, Pennycook SJ, Pantelides ST. Core-hole effects on energy-loss near-edge structure Ultramicroscopy. 86: 355-362. PMID 11281155 DOI: 10.1016/S0304-3991(00)00126-1 |
0.362 |
|
2001 |
Agassi D, Pennycook SJ, Christenb DK, Duscher G, Franceschetti A, Pantelides ST. Critical Currents at Grain Boundaries in High Temperature Superconductors Mrs Proceedings. 689. DOI: 10.1557/Proc-689-E8.1 |
0.351 |
|
2001 |
Smith J, French RH, Duscher G, Bonnell D. Consequence of Nanometer-Scale Property Variations to Macroscopic Properties of CrOCN Thin Films Journal of the American Ceramic Society. 84: 2873-2881. DOI: 10.1111/J.1151-2916.2001.Tb01108.X |
0.341 |
|
2001 |
Wagner T, Marien J, Duscher G. Cu, Nb and V on (110) TiO2 (rutile): Epitaxy and chemical reactions Thin Solid Films. 398: 419-426. DOI: 10.1016/S0040-6090(01)01351-7 |
0.351 |
|
2000 |
Pantelides ST, Duscher G, Ventra MD, Buczko R, McDonald K, Huang MB, Weller RA, Baumvol IJR, Stedile FC, Radtke C, Pennycook SJ, Chung GY, Tin CC, Williams JR, Won JH, et al. Atomic-Scale Engineering of the SiC-SiO2 Interface Materials Science Forum. 338: 1133-1136. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1133 |
0.456 |
|
2000 |
Pennycook SJ, Kim M, Duscher G, Browning ND, Sohlberg K, Pantelides ST. The Origin of Electrical Activity at Grain Boundaries in Perovskites and Related Materials Mrs Proceedings. 654. DOI: 10.1557/Proc-654-Aa1.3.1 |
0.34 |
|
2000 |
Pantelides ST, Buczko R, Ventra MD, Wang S, Kim S, PennycooK SJ, Duscher G, Feldman LC, Mcdonald K, Chanana RK, Weller RA, Williams JR, Chung GY, Tin CC, Isaacs-Smith T. Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H3.3 |
0.449 |
|
2000 |
Buczko R, Duscher G, Pennycook SJ, Pantelides ST. Excitonic effects in core-excitation spectra of semiconductors Physical Review Letters. 85: 2168-2171. DOI: 10.1103/Physrevlett.85.2168 |
0.316 |
|
2000 |
Chisholm MF, Duscher G, Pang L, Kumar KS. Fe16Al14B2 phase in Fe–Al alloys Philosophical Magazine A. 80: 2737-2745. DOI: 10.1080/01418610008216502 |
0.339 |
|
2000 |
Gao H, Duscher G, Kim M, Pennycook SJ, Kumar D, Cho KG, Singh RK. Cathodoluminescent properties at nanometer resolution through Z-contrast scanning transmission electron microscopy Applied Physics Letters. 77: 594-596. DOI: 10.1063/1.127055 |
0.37 |
|
2000 |
Duscher G, Buban J, Browning N, Chisholm M, Pennycook S. Interface Science. 8: 199-208. DOI: 10.1023/A:1008750706797 |
0.365 |
|
2000 |
Gao H, Duscher G, Kim M, Kumar D, Singh RK, Pennycook SJ. Nanometer-Scale Cathodoluminescent Properties Through Z-Contrast Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 6: 130-131. DOI: 10.1017/S1431927600033146 |
0.31 |
|
2000 |
Marien J, Wagner T, Duscher G, Koch A, Rühle M. Nb on (110) TiO2 (rutile): Growth, structure, and chemical composition of the interface Surface Science. 446: 219-228. DOI: 10.1016/S0039-6028(99)01172-3 |
0.42 |
|
1999 |
Buban JP, Moltaji HO, Duscher G, Browning ND. Correlating Atomic Scale Experimental Observations to Develop Three-Dimensional Structural Models for Grain Boundaries in Oxides. Microscopy and Microanalysis. 5: 48-57. PMID 10227826 DOI: 10.1017/S1431927699000045 |
0.38 |
|
1999 |
Duscher G, Buzcko R, Pennycook SJ, Pantelides ST, Müllejans H, Rühle M. Microscopic and Theoretical Investigations of the Si-SiO2 Interface Mrs Proceedings. 592. DOI: 10.1557/Proc-592-15 |
0.462 |
|
1999 |
Gao H, Duscher G, Fan X, Pennycook S, Kumar D, Cho K, Holloway P, Singh R. Relationship Between Structure and Luminescent Properties of Epitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates Mrs Proceedings. 589. DOI: 10.1557/Proc-589-203 |
0.322 |
|
1999 |
Pennycook SJ, Yan Y, Norman A, Zhang Y, Al-Jassim M, Mascarenhas A, Ahrenkiel SP, Chisholm MF, Duscher G, Pantelides ST. Atomic-Resolution Z-Contrast Imaging and its Application to Compositional Ordering and Segregation Mrs Proceedings. 583. DOI: 10.1557/Proc-583-235 |
0.379 |
|
1999 |
Wagner T, Duscher G, Kirchheim R. Decomposition of the ZrO2 electrolyte in contact with Ni: Structure and chemical composition of the Ni–electrolyte interface Journal of Materials Research. 14: 3340-3345. DOI: 10.1557/Jmr.1999.0452 |
0.336 |
|
1999 |
Lowndes DH, Rouleau CM, Thundat T, Duscher G, Kenik E, Pennycook S. Silicon and zinc telluride nanoparticles synthesized by low energy density pulsed laser ablation into ambient gases Journal of Materials Research. 14: 359-370. DOI: 10.1557/Jmr.1999.0053 |
0.337 |
|
1999 |
Browning ND, Buban JP, Moltaji HO, Pennycook SJ, Duscher G, Johnson KD, Rodrigues RP, Dravid VP. The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3 Applied Physics Letters. 74: 2638-2640. DOI: 10.1063/1.123922 |
0.342 |
|
1999 |
Pennycook SJ, Duscher G, Buczko R, Pantelides ST. The Si/SiO2 Interface: Atomic Structures, Composition, Strain And Energetics Microscopy and Microanalysis. 5: 122-123. DOI: 10.1017/S1431927600013933 |
0.396 |
|
1999 |
Browning N, Buban J, Prouteau C, Duscher G, Pennycook S. Investigating the atomic scale structure and chemistry of grain boundaries in high- T c superconductors Micron. 30: 425-436. DOI: 10.1016/S0968-4328(99)00044-X |
0.386 |
|
1999 |
Pennycook SJ, Chisholm MF, Yan Y, Duscher G, Pantelides ST. A combined experimental and theoretical approach to grain boundary structure and segregation Physica B-Condensed Matter. 273: 453-457. DOI: 10.1016/S0921-4526(99)00521-9 |
0.395 |
|
1998 |
Prouteau C, Duscher G, Browning ND, Pennycook SJ, Verebelyi D, Christen DK, Chisholm MF, Norton DP. Investigation of the local superconducting properties at grain boundaries in high-Tc superconductors Microscopy and Microanalysis. 4: 690-691. DOI: 10.2172/650390 |
0.325 |
|
1998 |
Geohegan DB, Puretzky AA, Meldrum A, Duscher G, Pennycook SJ. In Situ Diagnostics of Nanomaterial Synthesis by Laser Ablation: Time-resolved Photoluminescence Spectra and Imaging of Gas-Suspended Nanoparticles Deposited for Thin Films Mrs Proceedings. 536. DOI: 10.1557/Proc-536-359 |
0.34 |
|
1998 |
Geohegan DB, Puretzky AA, Duscher G, Pennycook SJ. Time-Resolved Imaging and Photoluminescence of Gas-Suspended Nanoparticles Synthesized by Laser Ablation: Dynamics, Transport, Collection, and Ex Situ Analysis Mrs Proceedings. 526. DOI: 10.1557/Proc-526-47 |
0.35 |
|
1998 |
Yan Y, Chisholm MF, Duscher G, Maiti A, Pennycook SJ, Pantelides ST. Impurity-Induced Structural Transformation of a MgO Grain Boundary Physical Review Letters. 81: 3675-3678. DOI: 10.1103/Physrevlett.81.3675 |
0.353 |
|
1998 |
Yan Y, Chisholm MF, Duscher G, Pennycook SJ. Atomic structure of a Ca-doped [001] tilt grain boundary in MgO Journal of Electron Microscopy. 47: 115-120. DOI: 10.1093/Oxfordjournals.Jmicro.A023567 |
0.31 |
|
1998 |
Duscher G, Pennycook SJ, Browning ND, Rupangudi R, Takoudis C, Gao H, Singh R. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces Characterization and Metrology For Ulsi Technology. 449: 191-195. DOI: 10.1063/1.56793 |
0.446 |
|
1998 |
Geohegan DB, Puretzky AA, Duscher G, Pennycook SJ. Photoluminescence from gas-suspended SiOx nanoparticles synthesized by laser ablation Applied Physics Letters. 73: 438-440. DOI: 10.1063/1.121892 |
0.343 |
|
1998 |
Geohegan DB, Puretzky AA, Duscher G, Pennycook SJ. Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation Applied Physics Letters. 72: 2987-2989. DOI: 10.1063/1.121516 |
0.324 |
|
1998 |
Stemmer S, Duscher G, James EM, Ceh M, Browning ND. Atomic Scale Structure-Property Relationships of Defects and Interfaces in Ceramics Microscopy and Microanalysis. 4: 556-557. DOI: 10.1017/S143192760002290X |
0.372 |
|
1998 |
French R, Müllejans H, Jones D, Duscher G, Cannon R, Rühle M. Dispersion forces and Hamaker constants for intergranular films in silicon nitride from spatially resolved-valence electron energy loss spectrum imaging Acta Materialia. 46: 2271-2287. DOI: 10.1016/S1359-6454(98)80008-6 |
0.341 |
|
1998 |
Prouteau C, Duscher G, Browning N, Pennycook S. Investigation of the local superconducting properties in Ag-sheathed BSCCO tapes by STEM Physica C: Superconductivity. 298: 1-9. DOI: 10.1016/S0921-4534(98)00012-4 |
0.32 |
|
1998 |
Lowndes DH, Rouleau CM, Thundat T, Duscher G, Kenik EA, Pennycook SJ. Silicon and zinc telluride nanoparticles synthesized by pulsed laser ablation: size distributions and nanoscale structure Applied Surface Science. 127: 355-361. DOI: 10.1016/S0169-4332(97)00655-7 |
0.354 |
|
1998 |
Duscher G, Duscher G, Browning ND, Pennycook SJ. Atomic Column Resolved Electron Energy-Loss Spectroscopy Physica Status Solidi (a). 166: 327-342. DOI: 10.1002/(Sici)1521-396X(199803)166:1<327::Aid-Pssa327>3.0.Co;2-R |
0.429 |
|
1997 |
Yan Y, Chisholm MF, Pennycook SJ, Duscher G, Maiti A, Pantelides ST. First-principles simulations and Z-contrast imaging of impurities at tilt grain boundaries in MgO Mrs Proceedings. 492: 181. DOI: 10.2172/564235 |
0.327 |
|
1997 |
Stemmer S, Duscher G, Scheu C, Heuer AH, Rühle M. The reaction between a TiNi shape memory thin film and silicon Journal of Materials Research. 12: 1734-1740. DOI: 10.1557/Jmr.1997.0239 |
0.332 |
|
1997 |
Schroer E, Hopfe S, Werner P, Gösele U, Duscher G, Rühle M, Tan TY. Oxide precipitation at silicon grain boundaries Applied Physics Letters. 70: 327-329. DOI: 10.1063/1.118405 |
0.323 |
|
1997 |
Browning ND, Buban JP, Prouteau C, Duscher G, Chisholm MF, Pennycook SJ. Determining Atomic Structure-Property Relationships at Grain Boundaries in High-Tc Superconductors Microscopy and Microanalysis. 3: 657-658. DOI: 10.1017/S1431927600010175 |
0.326 |
|
1997 |
Duscher G, Banhart F, Müllejans H, Pennycook SJ, Rühle M. Atomic Structure of Si-SiO2 Interface Microscopy and Microanalysis. 3: 459-460. DOI: 10.1017/S1431927600009181 |
0.413 |
|
1996 |
Duscher G, Müllejans H, Werner J, Rühle M. Amorphous SiO2 Precipitates at Silicon Grain Boundaries Materials Science Forum. 713-716. DOI: 10.4028/Www.Scientific.Net/Msf.207-209.713 |
0.32 |
|
1995 |
French RH, Scheu C, Duscher G, Muellejans H, Hoffmann MJ, Cannon RM. Interfacial electronic structure and full spectral Hamaker constants of Si3N4 intergranular films from VUV and SR-VEEL spectroscopy Materials Research Society Symposium - Proceedings. 357: 243-258. DOI: 10.1557/Proc-357-243 |
0.335 |
|
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