Ragesh Puthenkovilakam, Ph.D.
Affiliations: | 2004 | University of California, Los Angeles, Los Angeles, CA |
Area:
Chemical EngineeringGoogle:
"Ragesh Puthenkovilakam"Parents
Sign in to add mentor| Jane P. Chang | grad student | 2004 | UCLA | |
| (Experimental and theoretical studies of high -k dielectrics on silicon.) | ||||
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Publications
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| Choi J, Puthenkovilakam R, Chang JP. (2006) Effect of nitrogen on the electronic properties of hafnium oxynitrides Journal of Applied Physics. 99 |
| Puthenkovilakam R, Sawkar M, Chang JP. (2005) Electrical characteristics of postdeposition annealed Hf O2 on silicon Applied Physics Letters. 86: 1-3 |
| Choi J, Puthenkovilakam R, Chang JP. (2005) Band structure and alignment of the AlNSiC heterostructure Applied Physics Letters. 86: 1-3 |
| Puthenkovilakam R, Lin YS, Choi J, et al. (2005) Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon Journal of Applied Physics. 97 |
| Choi J, Puthenkovilakam R, Tanner CM, et al. (2005) Determination of band offsets at the AlN/SiC interface Ecs Transactions. 1: 220-227 |
| Puthenkovilakam R, Carter EA, Chang JP. (2004) First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces Physical Review B - Condensed Matter and Materials Physics. 69 |
| Puthenkovilakam R, Chang JP. (2004) An accurate determination of barrier heights at the HfO 2/Si interfaces Journal of Applied Physics. 96: 2701-2707 |
| Puthenkovilakam R, Chang JP. (2004) Valence band structure and band alignment at the ZrO 2/Si interface Applied Physics Letters. 84: 1353-1355 |
| Sha L, Puthenkovilakam R, Lin Y, et al. (2003) Ion-enhanced chemical etching of HfO2 for integration in metal–oxide–semiconductor field effect transistors Journal of Vacuum Science & Technology B. 21: 2420-2427 |
| Lin YS, Puthenkovilakam R, Chang JP, et al. (2003) Interfacial properties of ZrO2 on silicon Journal of Applied Physics. 93: 5945-5952 |