Children
Sign in to add trainee| Maria Gherasimova | grad student | 2002 | Yale |
| Jie Su | grad student | 2005 | Yale |
| Zai Y. Ren | grad student | 2007 | Yale |
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Publications
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| Kang JH, Li B, Zhao T, et al. (2020) RGB arrays for micro-LED applications using nanoporous GaN embedded with quantum dots. Acs Applied Materials & Interfaces |
| Chen SH, Huang Y, Singh KJ, et al. (2020) Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Photonics Research. 8: 630 |
| ElAfandy RT, Kang J, Li B, et al. (2020) Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector Applied Physics Letters. 117: 11101 |
| Chen SH, Huang Y, Chang Y, et al. (2020) High-bandwidth green semipolar (20-21) InGaN/GaN micro light-emitting diodes for visible light communication Acs Photonics. 7: 2228-2235 |
| Raghothamachar B, Liu Y, Peng H, et al. (2020) X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709 |
| Song J, Choi J, Han J. (2020) Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer Journal of Crystal Growth. 536: 125575 |
| Li B, Wang S, Nami M, et al. (2020) A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl) Journal of Crystal Growth. 534: 125492 |
| Song J, Han J. (2020) High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire Physica Status Solidi B-Basic Solid State Physics. 257: 1900565 |
| Song J, Choi J, Zhang C, et al. (2019) Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire. Acs Applied Materials & Interfaces |
| Li B, Nami M, Wang S, et al. (2019) In situ and selective area etching of GaN by tertiarybutylchloride (TBCl) Applied Physics Letters. 115: 162101 |