Udayan Ganguly, Ph.D.
Affiliations: | 2006 | Cornell University, Ithaca, NY, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Udayan Ganguly"Parents
Sign in to add mentor| Edwin C. Kan | grad student | 2006 | Cornell | |
| (Integration of carbon and silicon based nanoelectronics.) | ||||
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Publications
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| Saraswat V, Prasad S, Khanna A, et al. (2020) Reaction-Drift Model for Switching Transients in Pr₀.₇Ca₀.₃MnO₃-Based Resistive RAM Ieee Transactions On Electron Devices. 67: 3610-3617 |
| Lashkare S, Subramoney S, Ganguly U. (2020) Nanoscale Side-Contact Enabled Three Terminal Pr 0.7 Ca 0.3 MnO 3 Resistive Random Access Memory for In-Memory Computing Ieee Electron Device Letters. 41: 1344-1347 |
| Vardhan PH, Amita, Ganguly S, et al. (2019) Threshold Voltage Variability in Nanosheet GAA Transistors Ieee Transactions On Electron Devices. 66: 4433-4438 |
| Panwar N, Ganguly U. (2019) Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr 0.7 Ca 0.3 MnO 3 -Based RRAM Ieee Transactions On Electron Devices. 66: 829-832 |
| Khilwani D, Moghe V, Lashkare S, et al. (2019) PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem Apl Materials. 7: 91112 |
| Dutta S, Chavan T, Mohapatra NR, et al. (2019) Electrical Tunability of Partially Depleted Silicon on Insulator (PD-SOI) Neuron Solid-State Electronics. 160: 107623 |
| Vardhan PH, Ganguly S, Ganguly U. (2019) An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs Solid-State Electronics. 152: 65-71 |
| Das B, Schulze J, Ganguly U. (2018) Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode Ieee Transactions On Electron Devices. 65: 3414-3420 |
| Kumbhare P, Ganguly U. (2018) Ionic Transport Barrier Tuning by Composition in Pr 1– x Ca x MnO 3 -Based Selector-Less RRAM and Its Effect on Memory Performance Ieee Transactions On Electron Devices. 65: 2479-2484 |
| Lashkare S, Kumbhare P, Saraswat V, et al. (2018) Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing Ieee Electron Device Letters. 39: 1437-1440 |