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Mark S. Lundstrom - Publications

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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232 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Lundstrom MS, Alam MA. Moore's law: The journey ahead. Science (New York, N.Y.). 378: 722-723. PMID 36395227 DOI: 10.1126/science.ade2191  0.558
2020 Hu Y, Feng T, Gu X, Fan Z, Wang X, Lundstrom M, Shrestha SS, Bao H. Unification of nonequilibrium molecular dynamics and the mode-resolved phonon Boltzmann equation for thermal transport simulations Physical Review B. 101. DOI: 10.1103/Physrevb.101.155308  0.352
2019 Wang X, Lundstrom M. Limitations of zT as a figure of merit for nanostructured thermoelectric materials Journal of Applied Physics. 126: 195703. DOI: 10.1063/1.5127175  0.317
2019 Witkoske E, Guzman D, Feng Y, Strachan A, Lundstrom M, Lu N. The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2 Journal of Applied Physics. 125: 82531. DOI: 10.1063/1.5058275  0.326
2019 Witkoske E, Wang X, Maassen J, Lundstrom M. Universal behavior of the thermoelectric figure of merit, zT, vs. quality factor Materials Today Physics. 8: 43-48. DOI: 10.1016/J.Mtphys.2018.12.005  0.368
2018 Wang X, Askarpour V, Maassen J, Lundstrom M. On the calculation of Lorenz numbers for complex thermoelectric materials Journal of Applied Physics. 123: 55104. DOI: 10.1063/1.5009939  0.347
2017 Witkoske E, Wang X, Lundstrom M, Askarpour V, Maassen J. Thermoelectric band engineering: The role of carrier scattering Journal of Applied Physics. 122: 175102. DOI: 10.1063/1.4994696  0.352
2017 Kaiser J, Feng T, Maassen J, Wang X, Ruan X, Lundstrom M. Thermal transport at the nanoscale: A Fourier's law vs. phonon Boltzmann equation study Journal of Applied Physics. 121: 044302. DOI: 10.1063/1.4974872  0.346
2016 Bhosale JS, Moore JE, Wang X, Bermel P, Lundstrom MS. Steady-state photoluminescent excitation characterization of semiconductor carrier recombination. The Review of Scientific Instruments. 87: 013104. PMID 26827306 DOI: 10.1063/1.4939047  0.345
2016 Dunn J, Antillon E, Maassen J, Lundstrom M, Strachan A. Role of energy distribution in contacts on thermal transport in Si: A molecular dynamics study Journal of Applied Physics. 120: 225112. DOI: 10.1063/1.4971254  0.349
2016 Kayyalha M, Maassen J, Lundstrom M, Shi L, Chen YP. Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2 Journal of Applied Physics. 120. DOI: 10.1063/1.4963364  0.35
2016 Moore JE, Hages CJ, Agrawal R, Lundstrom MS, Gray JL. The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells Applied Physics Letters. 109. DOI: 10.1063/1.4955402  0.616
2016 Maassen J, Lundstrom M. Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations Journal of Applied Physics. 119: 95102. DOI: 10.1063/1.4942836  0.385
2015 Luo Z, Maassen J, Deng Y, Du Y, Garrelts RP, Lundstrom MS, Ye PD, Xu X. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nature Communications. 6: 8572. PMID 26472191 DOI: 10.1038/Ncomms9572  0.311
2015 Lundstrom M, Datta S, Sun X. Emission-Diffusion Theory of the MOSFET Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2481886  0.329
2015 Rakheja S, Lundstrom MS, Antoniadis DA. An improved virtual-source-based transport model for quasi-ballistic transistors - Part II: Experimental verification Ieee Transactions On Electron Devices. 62: 2794-2801. DOI: 10.1109/Ted.2015.2457872  0.485
2015 Rakheja S, Lundstrom MS, Antoniadis DA. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2457781  0.43
2015 Rahman A, Lundstrom MS. Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET [Mar 02 481-489] Ieee Transactions On Electron Devices. 62: 2367-2367. DOI: 10.1109/Ted.2015.2437276  0.571
2015 Chavali RVK, Moore JE, Wang X, Alam MA, Lundstrom MS, Gray JL. The Frozen Potential Approach to Separate the Photocurrent and Diode Injection Current in Solar Cells Ieee Journal of Photovoltaics. 5: 865-873. DOI: 10.1109/Jphotov.2015.2405757  0.724
2015 Maassen J, Lundstrom M. A simple Boltzmann transport equation for ballistic to diffusive transient heat transport Journal of Applied Physics. 117: 135102. DOI: 10.1063/1.4916245  0.375
2015 Maassen J, Lundstrom MS. Steady-state heat transport: Ballistic-to-diffusive with Fourier's law Journal of Applied Physics. 117: 35104. DOI: 10.1063/1.4905590  0.386
2015 Zheng M, Wang HP, Sutter-Fella CM, Battaglia C, Aloni S, Wang X, Moore J, Beeman JW, Hettick M, Amani M, Hsu WT, Ager JW, Bermel P, Lundstrom M, He JH, et al. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201501337  0.389
2014 Wang X, Khan MR, Lundstrom M, Bermel P. Performance-limiting factors for GaAs-based single nanowire photovoltaics. Optics Express. 22: A344-58. PMID 24922244 DOI: 10.1364/Oe.22.00A344  0.379
2014 Lundstrom MS, Antoniadis DA. Compact models and the physics of nanoscale FETs Ieee Transactions On Electron Devices. 61: 225-233. DOI: 10.1109/Ted.2013.2283253  0.385
2014 Moore JE, Dongaonkar S, Chavali RVK, Alam MA, Lundstrom MS. Correlation of built-in potential and I-V crossover in thin-film solar cells Ieee Journal of Photovoltaics. 4: 1138-1148. DOI: 10.1109/Jphotov.2014.2316364  0.677
2013 Pettes MT, Maassen J, Jo I, Lundstrom MS, Shi L. Effects of surface band bending and scattering on thermoelectric transport in suspended bismuth telluride nanoplates. Nano Letters. 13: 5316-22. PMID 24164564 DOI: 10.1021/Nl402828S  0.362
2013 Mehrotra SR, Kim S, Kubis T, Povolotskyi M, Lundstrom MS, Klimeck G. Engineering nanowire n-MOSFETs at Lg<8 nm Ieee Transactions On Electron Devices. 60: 2171-2177. DOI: 10.1109/Ted.2013.2263806  0.45
2013 Ganapathi K, Yoon Y, Lundstrom M, Salahuddin S. Ballistic I-v characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications Ieee Transactions On Electron Devices. 60: 958-964. DOI: 10.1109/Ted.2013.2238236  0.392
2013 Wang X, Lundstrom MS. On the use of rau's reciprocity to deduce external radiative efficiency in solar cells Ieee Journal of Photovoltaics. 3: 1348-1353. DOI: 10.1109/Jphotov.2013.2278658  0.303
2013 Wang X, Khan MR, Gray JL, Alam MA, Lundstrom MS. Design of gaas solar cells operating close to the shockley-queisser limit Ieee Journal of Photovoltaics. 3: 737-744. DOI: 10.1109/Jphotov.2013.2241594  0.743
2013 Burmistrova PV, Maassen J, Favaloro T, Saha B, Salamat S, Rui Koh Y, Lundstrom MS, Shakouri A, Sands TD. Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4801886  0.688
2013 Maassen J, Jeong C, Baraskar A, Rodwell M, Lundstrom M. Full band calculations of the intrinsic lower limit of contact resistivity Applied Physics Letters. 102. DOI: 10.1063/1.4798238  0.613
2012 Franklin AD, Luisier M, Han SJ, Tulevski G, Breslin CM, Gignac L, Lundstrom MS, Haensch W. Sub-10 nm carbon nanotube transistor. Nano Letters. 12: 758-62. PMID 22260387 DOI: 10.1021/Nl203701G  0.395
2012 Park SH, Liu Y, Kharche N, Salmani Jelodar M, Klimeck G, Lundstrom MS, Luisier M. Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) Ieee Transactions On Electron Devices. 59: 2107-2114. DOI: 10.1109/Ted.2012.2198481  0.433
2012 Liu Y, Luisier M, Majumdar A, Antoniadis DA, Lundstrom MS. On the interpretation of ballistic injection velocity in deeply scaled MOSFETs Ieee Transactions On Electron Devices. 59: 994-1001. DOI: 10.1109/Ted.2012.2183599  0.406
2012 Jeong C, Kim R, Lundstrom MS. On the best bandstructure for thermoelectric performance: A Landauer perspective Journal of Applied Physics. 111. DOI: 10.1063/1.4727855  0.628
2012 Jeong C, Lundstrom M. Analysis of thermal conductance of ballistic point contacts Applied Physics Letters. 100. DOI: 10.1063/1.4726111  0.596
2012 Jeong C, Datta S, Lundstrom M. Thermal conductivity of bulk and thin-film silicon: A Landauer approach Journal of Applied Physics. 111. DOI: 10.1063/1.4710993  0.598
2012 Kim R, Lundstrom MS. Computational study of energy filtering effects in one-dimensional composite nano-structures Journal of Applied Physics. 111. DOI: 10.1063/1.3678001  0.384
2012 Ray B, Lundstrom MS, Alam MA. Can morphology tailoring improve the open circuit voltage of organic solar cells? Applied Physics Letters. 100. DOI: 10.1063/1.3672221  0.773
2012 Paul A, Salamat S, Jeong C, Klimeck G, Lundstrom M. An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach Journal of Computational Electronics. 11: 56-66. DOI: 10.1007/S10825-011-0379-2  0.753
2011 Grassi R, Low T, Lundstrom M. Scaling of the Energy Gap in Pattern-Hydrogenated Graphene Nano Letters. 11: 4574-4578. PMID 21999430 DOI: 10.1021/Nl2017338  0.314
2011 Jeong C, Nair P, Khan M, Lundstrom M, Alam MA. Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes. Nano Letters. 11: 5020-5. PMID 21985666 DOI: 10.1021/Nl203041N  0.716
2011 Sui Y, Low T, Lundstrom M, Appenzeller J. Signatures of disorder in the minimum conductivity of graphene. Nano Letters. 11: 1319-22. PMID 21329334 DOI: 10.1021/Nl104399Z  0.318
2011 Williams JR, Low T, Lundstrom MS, Marcus CM. Gate-controlled guiding of electrons in graphene. Nature Nanotechnology. 6: 222-5. PMID 21317890 DOI: 10.1038/Nnano.2011.3  0.349
2011 Jeong C, Klimeck G, Lundstrom M. Computational study of the electronic performance of cross-plane superlattice Peltier devices Materials Research Society Symposium Proceedings. 1314: 13-18. DOI: 10.1557/Opl.2011.509  0.634
2011 Berdebes D, Low T, Sui Y, Appenzeller J, Lundstrom MS. Substrate gating of contact resistance in graphene transistors Ieee Transactions On Electron Devices. 58: 3925-3932. DOI: 10.1109/Ted.2011.2163800  0.326
2011 Liu Y, Luisier M, Lundstrom MS. Temperature dependence of the transconductance in ballistic III-V QWFETs Ieee Transactions On Electron Devices. 58: 1804-1808. DOI: 10.1109/Ted.2011.2129520  0.399
2011 Kim R, Lundstrom MS. Computational study of the Seebeck coefficient of one-dimensional composite nano-structures Journal of Applied Physics. 110: 034511. DOI: 10.1063/1.3619855  0.375
2011 Jeong C, Datta S, Lundstrom M. Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach Journal of Applied Physics. 109: 073718. DOI: 10.1063/1.3567111  0.607
2011 Gao Y, Lundstrom MS, Nikonov DE. Simulating realistic implementations of spin field effect transistor Journal of Applied Physics. 109. DOI: 10.1063/1.3536460  0.389
2011 Jeong C, Lundstrom M. On electronic structure engineering and thermoelectric performance Journal of Electronic Materials. 40: 738-743. DOI: 10.1007/S11664-011-1533-0  0.584
2010 Salamat S, Wang Y, Lundstrom MS. Development of instructional modules and simulation tools for thermoelectric systems Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508923  0.664
2010 Pal HS, Nikonov DE, Kim R, Lundstrom MS. Electron-phonon scattering in planar MOSFETs with NEGF 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562595  0.777
2010 Strachan A, Klimeck G, Lundstrom M. Cyber-Enabled Simulations in Nanoscale Science and Engineering Computing in Science & Engineering. 12: 12-17. DOI: 10.1109/Mcse.2010.38  0.327
2010 Dongaonkar S, Servaites JD, Ford GM, Loser S, Moore J, Gelfand RM, Mohseni H, Hillhouse HW, Agrawal R, Ratner MA, Marks TJ, Lundstrom MS, Alam MA. Universality of non-Ohmic shunt leakage in thin-film solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3518509  0.653
2010 Gao Y, Low T, Lundstrom MS, Nikonov DE. Simulation of spin field effect transistors: Effects of tunneling and spin relaxation on performance Journal of Applied Physics. 108. DOI: 10.1063/1.3496666  0.346
2010 Kim R, Jeong C, Lundstrom MS. On momentum conservation and thermionic emission cooling Journal of Applied Physics. 107. DOI: 10.1063/1.3295899  0.615
2010 Jeong C, Kim R, Luisier M, Datta S, Lundstrom M. On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients Journal of Applied Physics. 107: 023707. DOI: 10.1063/1.3291120  0.628
2010 Liu Y, Pal HS, Lundstrom MS, Kim DH, Alamo JAD, Antoniadis DA. Device physics and performance potential of III-V field-effect transistors Fundamentals of Iii-V Semiconductor Mosfets. 31-49. DOI: 10.1007/978-1-4419-1547-4_3  0.774
2009 Jeong C, Antoniadis DA, Lundstrom MS. On backscattering and mobility in nanoscale silicon MOSFETs Ieee Transactions On Electron Devices. 56: 2762-2769. DOI: 10.1109/Ted.2009.2030844  0.632
2009 Neophytou N, Rakshit T, Lundstrom MS. Performance analysis of 60-nm gate-length III-V InGaAs HEMTs: Simulations versus experiments Ieee Transactions On Electron Devices. 56: 1377-1387. DOI: 10.1109/Ted.2009.2021437  0.465
2009 Low T, Hong S, Appenzeller J, Datta S, Lundstrom MS. Conductance asymmetry of graphene p-n junction Ieee Transactions On Electron Devices. 56: 1292-1299. DOI: 10.1109/Ted.2009.2017646  0.345
2009 Koswatta SO, Lundstrom MS, Nikonov DE. Performance comparison between p-i-n tunneling transistors and conventional MOSFETs Ieee Transactions On Electron Devices. 56: 456-465. DOI: 10.1109/Ted.2008.2011934  0.774
2009 Kim R, Lundstrom MS. Physics of carrier backscattering in one- and two-dimensional nanotransistors Ieee Transactions On Electron Devices. 56: 132-139. DOI: 10.1109/Ted.2008.2008368  0.353
2009 Kim R, Datta S, Lundstrom MS. Influence of dimensionality on thermoelectric device performance Journal of Applied Physics. 105. DOI: 10.1063/1.3074347  0.43
2008 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Contact effects in graphene nanoribbon transistors. Nano Letters. 8: 1819-24. PMID 18558785 DOI: 10.1021/Nl080255R  0.318
2008 Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Computational study of exciton generation in suspended carbon nanotube transistors. Nano Letters. 8: 1596-601. PMID 18457455 DOI: 10.1021/Nl0801226  0.771
2008 Kim R, Neophytou N, Paul A, Klimeck G, Lundstrom MS. Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1628-1631. DOI: 10.1116/1.2908442  0.402
2008 Kim R, Lundstrom MS. Characteristic features of 1-D ballistic transport in nanowire MOSFETs Ieee Transactions On Nanotechnology. 7: 787-794. DOI: 10.1109/Tnano.2008.920196  0.453
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Guest editorial special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Nanotechnology. 7: 643-650. DOI: 10.1109/Tnano.2008.2010023  0.343
2008 Neophytou N, Paul A, Lundstrom MS, Klimeck G. Bandstructure effects in silicon nanowire electron transport Ieee Transactions On Electron Devices. 55: 1286-1297. DOI: 10.1109/Ted.2008.920233  0.413
2008 Liu Y, Neophytou N, Klimeck G, Lundstrom MS. Band-structure effects on the performance of III-V ultrathin-body SOI MOSFETs Ieee Transactions On Electron Devices. 55: 1116-1122. DOI: 10.1109/Ted.2008.919290  0.37
2008 Kumar MJ, Reed MA, Amaratunga GAJ, Cohen GM, Janes DB, Lieber CM, Meyyappan M, Wernersson LE, Wang KL, Chau RS, Kamins TI, Lundstrom M, Yu B, Zhou C. Special issue on nanowire transistors: Modeling, device design, and technology Ieee Transactions On Electron Devices. 55: 2813-2819. DOI: 10.1109/Ted.2008.2006781  0.377
2008 Liu Y, Neophytou N, Low T, Klimeck G, Lundstrom MS. A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Ieee Transactions On Electron Devices. 55: 866-871. DOI: 10.1109/Ted.2007.915056  0.362
2008 Pal HS, Cantley KD, Ahmed SS, Lundstrom MS. Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs Ieee Transactions On Electron Devices. 55: 904-908. DOI: 10.1109/Ted.2007.914830  0.749
2008 Anantram MP, Lundstrom MS, Nikonov DE. Modeling of nanoscale devices Proceedings of the Ieee. 96: 1511-1550. DOI: 10.1109/JPROC.2008.927355  0.349
2008 Pal HS, Low T, Lundstrom MS. NEGF analysis of InGaAs schottky barrier double gate MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796843  0.779
2008 Low T, Lundstrom MS, Nikonov DE. Modeling of spin metal-oxide-semiconductor field-effect transistor: A nonequilibrium Green's function approach with spin relaxation Journal of Applied Physics. 104. DOI: 10.1063/1.3013438  0.307
2008 Yang T, Liu Y, Ye PD, Xuan Y, Pal H, Lundstrom MS. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92. DOI: 10.1063/1.2953080  0.781
2008 Koswatta SO, Lundstrom MS, Nikonov DE. Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839375  0.782
2008 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Computational study of double-gate graphene nano-ribbon transistors Journal of Computational Electronics. 7: 394-397. DOI: 10.1007/S10825-008-0243-1  0.43
2008 Neophytou N, Paul A, Lundstrom MS, Klimeck G. Simulations of nanowire transistors: Atomistic vs. effective mass models Journal of Computational Electronics. 7: 363-366. DOI: 10.1007/S10825-008-0188-4  0.394
2007 Koswatta SO, Lundstrom MS, Nikonov DE. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling. Nano Letters. 7: 1160-4. PMID 17388638 DOI: 10.1021/Nl062843F  0.779
2007 Liang G, Xiang J, Kharche N, Klimeck G, Lieber CM, Lundstrom M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters. 7: 642-6. PMID 17326690 DOI: 10.1021/Nl062596F  0.432
2007 Lundstrom MS, Cantley KD, Pal HS. Nanoscale transistors: Physics and materials Materials Research Society Symposium Proceedings. 958: 185-195. DOI: 10.1557/Proc-0958-L06-06  0.785
2007 Koswatta SO, Hasan S, Lundstrom MS, Anantram MP, Nikonov DE. Nonequilibrium Green's function treatment of phonon scattering in carbon-nanotube transistors Ieee Transactions On Electron Devices. 54: 2339-2351. DOI: 10.1109/Ted.2007.902900  0.814
2007 Liang G, Neophytou N, Nikonov DE, Lundstrom MS. Performance projections for ballistic graphene nanoribbon field-effect transistors Ieee Transactions On Electron Devices. 54: 677-682. DOI: 10.1109/Ted.2007.891872  0.414
2007 Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Exciton generation in suspended carbon nanotube FETs: A computational study Technical Digest - International Electron Devices Meeting, Iedm. 745-748. DOI: 10.1109/IEDM.2007.4419054  0.757
2007 Cantley KD, Liu Y, Pal HS, Low T, Ahmed SS, Lundstrom MS. Performance analysis of III-V materials in a double-gate nano-MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 113-116. DOI: 10.1109/IEDM.2007.4418877  0.788
2007 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation Journal of Applied Physics. 102. DOI: 10.1063/1.2775917  0.452
2006 Guo J, Koswatta SO, Neophytou N, Lundstrom M. Carbon nanotube field-effect transistors International Journal of High Speed Electronics and Systems. 16: 897-912. DOI: 10.1142/S0129156406004077  0.764
2006 Koswatta SO, Neophytou N, Kienle D, Fiori G, Lundstrom MS. Dependence of DC characteristics of CNT MOSFETs on bandstructure models Ieee Transactions On Nanotechnology. 5: 368-372. DOI: 10.1109/Tnano.2006.876916  0.773
2006 Neophytou N, Guo J, Lundstrom MS. Three-dimensional electrostatic effects of carbon nanotube transistors Ieee Transactions On Nanotechnology. 5: 385-392. DOI: 10.1109/Tnano.2006.876912  0.421
2006 Hasan S, Alam MA, Lundstrom M. Simulation of carbon nanotube FETs including hot-phonon and self-heating effects Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/Ted.2007.903291  0.792
2006 Koswatta SO, Hasan S, Lundstrom MS, Anantram MP, Nikonov DE. Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias Applied Physics Letters. 89. DOI: 10.1063/1.2218322  0.809
2005 Rahman A, Klimeck G, Lundstrom M, Boykin TB, Vagidov N. Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si Japanese Journal of Applied Physics. 44: 2187-2190. DOI: 10.1143/Jjap.44.2187  0.567
2005 Guo J, Hasan S, Javey A, Bosman G, Lundstrom M. Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors Ieee Transactions On Nanotechnology. 4: 715-721. DOI: 10.1109/Tnano.2005.858601  0.671
2005 Salahuddin S, Lundstrom M, Datta S. Transport effects on signal propagation in quantum wires Ieee Transactions On Electron Devices. 52: 1734-1742. DOI: 10.1109/Ted.2005.852170  0.339
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors Ieee Transactions On Electron Devices. 52: 1589-1595. DOI: 10.1109/Ted.2005.850945  0.684
2005 Koswatta SO, Lundstrom MS, Anantram MP, Nikonov DE. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146065  0.774
2005 Wang J, Polizzi E, Ghosh A, Datta S, Lundstrom M. Theoretical investigation of surface roughness scattering in silicon nanowire transistors Applied Physics Letters. 87. DOI: 10.1063/1.2001158  0.656
2005 Guo J, Lundstrom MS. Role of phonon scattering in carbon nanotube field-effect transistors Applied Physics Letters. 86: 193103. DOI: 10.1063/1.1923183  0.389
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations Applied Physics Letters. 86: 093113. DOI: 10.1063/1.1873055  0.698
2005 Rahman A, Lundstrom MS, Ghosh AW. Generalized effective-mass approach for n -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers Journal of Applied Physics. 97. DOI: 10.1063/1.1845586  0.725
2005 Koswatta SO, Nikonov DE, Lundstrom MS. Computational study of carbon nanotube p-i-n tunnel FETs Technical Digest - International Electron Devices Meeting, Iedm. 2005: 518-521.  0.747
2004 Javey A, Guo J, Paulsson M, Wang Q, Mann D, Lundstrom M, Dai H. High-field quasiballistic transport in short carbon nanotubes. Physical Review Letters. 92: 106804. PMID 15089227 DOI: 10.1103/Physrevlett.92.106804  0.386
2004 Rahman A, Klimeck G, Vagidov N, Boykin TB, Lundstrom M. Nanoscale Device Simulation at the Scaling Limit and Beyond The Japan Society of Applied Physics. 2004: 726-727. DOI: 10.7567/Ssdm.2004.A-9-1  0.536
2004 Wang J, Solomon PM, Lundstrom M. A general approach for the performance assessment of nanoscale silicon FETs Ieee Transactions On Electron Devices. 51: 1366-1370. DOI: 10.1109/Ted.2004.833962  0.38
2004 Guo J, Datta S, Lundstrom M. A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors Ieee Transactions On Electron Devices. 51: 172-177. DOI: 10.1109/Ted.2003.821883  0.382
2004 Wang J, Polizzi E, Lundstrom M. A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation Journal of Applied Physics. 96: 2192-2203. DOI: 10.1063/1.1769089  0.401
2004 Venugopal R, Goasguen S, Datta S, Lundstrom MS. Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors Journal of Applied Physics. 95: 292-305. DOI: 10.1063/1.1631754  0.664
2004 Javey A, Guo J, Farmer DB, Wang Q, Yenilmez E, Gordon RG, Lundstrom M, Dai H. Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays Nano Letters. 4: 1319-1322. DOI: 10.1021/Nl049222B  0.401
2004 Javey A, Guo J, Farmer DB, Wang Q, Wang D, Gordon RG, Lundstrom M, Dai H. Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics Nano Letters. 4: 447-450. DOI: 10.1021/Nl035185X  0.412
2004 Hasan S, Wang J, Lundstrom M. Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study Solid-State Electronics. 48: 867-875. DOI: 10.1016/J.Sse.2003.12.022  0.703
2004 Wang J, Polizzi E, Ghosh A, Datta S, Lundstrom M. A quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors Journal of Computational Electronics. 3: 453-457. DOI: 10.1007/S10825-004-7095-0  0.635
2004 Rahman A, Lundstrom M, Ghosh AW. Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers Journal of Computational Electronics. 3: 281-285. DOI: 10.1007/s10825-004-7062-9  0.507
2004 Neophytou N, Lundstrom M, Guo J. 3D electrostatics of carbon nanotube field-effect transistors Journal of Computational Electronics. 3: 277-280. DOI: 10.1007/S10825-004-7061-X  0.373
2003 Javey A, Guo J, Wang Q, Lundstrom M, Dai H. Ballistic carbon nanotube field-effect transistors. Nature. 424: 654-7. PMID 12904787 DOI: 10.1038/Nature01797  0.413
2003 Ren Z, Venugopal R, Goasguen S, Datta S, Lundstrom MS. nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Ieee Transactions On Electron Devices. 50: 1914-1925. DOI: 10.1109/Ted.2003.816524  0.736
2003 Rahman A, Guo J, Datta S, Lundstrom MS. Theory of ballistic nanotransistors Ieee Transactions On Electron Devices. 50: 1853-1864. DOI: 10.1109/Ted.2003.815366  0.539
2003 Wang J, Lundstrom M. Ballistic transport in high electron mobility transistors Ieee Transactions On Electron Devices. 50: 1604-1609. DOI: 10.1109/Ted.2003.814980  0.453
2003 Goasguen S, Venugopal R, Lundstrom MS. Modeling transport in nanoscale silicon and molecular devices on parallel machines Proceedings of the Ieee Conference On Nanotechnology. 1: 398-401. DOI: 10.1109/NANO.2003.1231802  0.618
2003 Venugopal R, Paulsson M, Goasguen S, Datta S, Lundstrom MS. A simple quantum mechanical treatment of scattering in nanoscale transistors Journal of Applied Physics. 93: 5613-5625. DOI: 10.1063/1.1563298  0.637
2002 Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1: 241-6. PMID 12618786 DOI: 10.1038/Nmat769  0.404
2002 Guo J, Lundstrom MS. A computational study of thin-body, double-gate, schottky barrier MOSFETs Ieee Transactions On Electron Devices. 49: 1897-1902. DOI: 10.1109/Ted.2002.804696  0.418
2002 Parikh CD, Lundstrom MS. Electron transport in nanoscale bipolar transistors Proceedings of the Ieee Conference On Nanotechnology. 2002: 103-106. DOI: 10.1109/NANO.2002.1032134  0.318
2002 Rahman A, Lundstrom MS. A compact scattering model for the nanoscale double-gate MOSFET Ieee Transactions On Electron Devices. 49: 481-489. DOI: 10.1109/16.987120  0.563
2002 Lundstrom M, Ren Z. Essential physics of carrier transport in nanoscale MOSFETs Ieee Transactions On Electron Devices. 49: 133-141. DOI: 10.1109/16.974760  0.429
2002 Rhew JH, Lundstrom MS. Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 92: 5196-5202. DOI: 10.1063/1.1509098  0.711
2002 Venugopal R, Ren Z, Datta S, Lundstrom MS, Jovanovic D. Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches Journal of Applied Physics. 92: 3730-3739. DOI: 10.1063/1.1503165  0.737
2002 Guo J, Goasguen S, Lundstrom M, Datta S. Metal-insulator-semiconductor electrostatics of carbon nanotubes Applied Physics Letters. 81: 1486-1488. DOI: 10.1063/1.1502188  0.356
2002 Guo J, Lundstrom MS, Datta S. Performance projections for ballistic carbon nanotube field-effect transistors Applied Physics Letters. 80: 3192-3194. DOI: 10.1063/1.1474604  0.417
2002 Lundstrom M, Rhew J-. A Landauer Approach to Nanoscale MOSFETs Journal of Computational Electronics. 1: 481-489. DOI: 10.1023/A:1022949306215  0.328
2002 Guo J, Ren Z, Lundstrom M. Journal of Computational Electronics. 1: 185-189. DOI: 10.1023/A:1020717322718  0.624
2002 Rhew J, Ren Z, Lundstrom MS. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388. DOI: 10.1023/A:1020712010848  0.753
2002 Rhew JH, Ren Z, Lundstrom MS. A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906. DOI: 10.1016/S0038-1101(02)00130-2  0.764
2001 Lundstrom M. Device Physics of Sub-100 nm Transistors The Japan Society of Applied Physics. 2001: 376-377. DOI: 10.7567/Ssdm.2001.F-4-1  0.353
2001 Banoo K, Rhew J, Lundstrom M, Shu C, Jerome JW. Simulating Quasi-ballistic Transport in Si Nanotransistors Vlsi Design. 13: 5-13. DOI: 10.1155/2001/16023  0.8
2001 Lundstrom MS. On the mobility versus drain current relation for a nanoscale MOSFET Ieee Electron Device Letters. 22: 293-295. DOI: 10.1109/55.924846  0.386
2001 Rahman A, Ren Z, Rhew JH, Lundstrom MS. Towards a compact scattering model for nanoscale MOSFETs 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 554-557.  0.672
2000 Banoo K, Lundstrom MS. Electron transport in a model Si transistor Solid-State Electronics. 44: 1689-1695. DOI: 10.1016/S0038-1101(00)00096-4  0.824
2000 Fossum JG, Ren Z, Kim K, Lundstrom M. Extraordinarily high drive currents in asymmetrical double-gate MOSFETs Superlattices and Microstructures. 28: 525-530. DOI: 10.1006/Spmi.2000.0957  0.614
2000 Ren Z, Lundstrom M. Simulation of nanoscale MOSFETs: A scattering theory interpretation Superlattices and Microstructures. 27: 177-189. DOI: 10.1006/Spmi.1999.0798  0.615
1998 Banoo K, Assad F, Lundstrom MS. Formulation of the Boltzmann equation as a multi-mode drift-diffusion equation Vlsi Design. 8: 539-544. DOI: 10.1155/1998/59373  0.772
1998 Assad F, Banoo K, Lundstrom M. The drift-diffusion equation revisited Solid-State Electronics. 42: 283-295. DOI: 10.1016/S0038-1101(97)00263-3  0.789
1998 Datta S, Assad F, Lundstrom MS. The silicon MOSFET from a transmission viewpoint Superlattices and Microstructures. 23: 771-780. DOI: 10.1006/Spmi.1997.0563  0.76
1997 Lundstrom M. Elementary scattering theory of the Si MOSFET Ieee Electron Device Letters. 18: 361-363. DOI: 10.1109/55.596937  0.396
1997 Chen EH, Chin TP, Woodall JM, Lundstrom MS. Electrical characteristics of nearly relaxed InAs/GaP heterojunctions Applied Physics Letters. 70: 1551-1553. DOI: 10.1063/1.118614  0.357
1997 Holden T, Pollak FH, Freeouf JL, McInturff D, Gray JL, Lundstrom MS, Woodall JM. Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) Applied Physics Letters. 70: 1107-1109. DOI: 10.1063/1.118499  0.54
1997 D'Souza SL, Melloch MR, Lundstrom MS, Harmon ES. Technique for measurement of the minority carrier mobility with a bipolar junction transistor Applied Physics Letters. 70: 475-477. DOI: 10.1063/1.118185  0.391
1996 Dodd PE, Lovejoy ML, Lundstrom MS, Melloch MR, Woodall JM, Pettit D. Demonstration of npn InAs bipolar transistors with inverted base doping Ieee Electron Device Letters. 17: 166-168. DOI: 10.1109/55.485162  0.325
1995 Tanaka S, Lundstrom MS. A Flux-Based Study of Carrier Transport in Thin-Base Diodes and Transistors Ieee Transactions On Electron Devices. 42: 1806-1815. DOI: 10.1109/16.464415  0.431
1995 Patkar MP, Lundstrom MS, Melloch MR. Characterization of photon recycling in thin crystalline GaAs light emitting diodes Journal of Applied Physics. 78: 2817-2822. DOI: 10.1063/1.360081  0.403
1995 Lovejoy ML, Melloch MR, Lundstrom MS. Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs Applied Physics Letters. 67: 1101. DOI: 10.1063/1.114974  0.352
1995 Alam MA, Lundstrom MS. Transition matrix approach for Monte Carlo simulation of coupled electron/phonon/photon dynamics Applied Physics Letters. 67: 512-514. DOI: 10.1063/1.114553  0.647
1995 Lundstrom MS, Tanaka S. On the Carrier Mobility in Forward-Biased Semiconductor Barriers. Applied Physics Letters. 66: 962-964. DOI: 10.1063/1.113611  0.39
1995 Alam MA, Tanaka SI, Lundstrom MS. A small-signal, one-flux analysis of short-base transport Solid State Electronics. 38: 177-182. DOI: 10.1016/0038-1101(94)E0043-E  0.671
1994 Stettler MA, Lundstrom MS. A Microscopic Study of Transport in Thin Base Silicon Bipolar Transistors Ieee Transactions On Electron Devices. 41: 1027-1033. DOI: 10.1109/16.293317  0.417
1994 Stettler MA, Lundstrom MS. A Detailed Investigation of Heterojunction Transport Using a Rigorous Solution to the Boltzmann Equation Ieee Transactions On Electron Devices. 41: 592-600. DOI: 10.1109/16.278515  0.395
1994 Alam MA, Lundstrom MS. Simulation of compound semiconductor devices using a scattering matrix approach Semiconductor Science and Technology. 9: 862-864. DOI: 10.1088/0268-1242/9/5S/125  0.678
1994 Harmon ES, Melloch MR, Lundstrom MS, Cardone F. Thermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors Applied Physics Letters. 64: 205-207. DOI: 10.1063/1.111505  0.43
1994 Harmon ES, Melloch MR, Lundstrom MS. Effective band-gap shrinkage in GaAs Applied Physics Letters. 64: 502-504. DOI: 10.1063/1.111110  0.389
1994 Alam MA, Lundstrom MS. Scattering matrix formulation of electron transport in compound semiconductor devices Solid State Electronics. 37: 1509-1520. DOI: 10.1016/0038-1101(94)90159-7  0.687
1994 Tanaka Si, Lundstrom MS. A compact HBT device model based on a one-flux treatment of carrier transport Solid State Electronics. 37: 401-410. DOI: 10.1016/0038-1101(94)90004-3  0.442
1994 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BR, Ahrenkiel RK. Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique Journal of Electronic Materials. 23: 669-673. DOI: 10.1007/Bf02653354  0.359
1993 Stettler MA, Alani MA, Lundstrom MS. A Critical Examination of the Assumptions Underlying Macroscopic Transport Equations for Silicon Devices Ieee Transactions On Electron Devices. 40: 733-740. DOI: 10.1109/16.202785  0.418
1993 Lush GB, Melloch MR, Lundstrom MS, MacMillan HF, Asher S. Concentration-dependent optical-absorption coefficient in n-type GaAs Journal of Applied Physics. 74: 4694-4702. DOI: 10.1063/1.354336  0.334
1993 Alam MA, Stettler MA, Lundstrom MS. A spectral flux method for solving the Boltzmann equation Journal of Applied Physics. 73: 4998-5003. DOI: 10.1063/1.353819  0.645
1993 Harmon ES, Lovejoy ML, Melloch MR, Lundstrom MS, De Lyon TJ, Woodall JM. Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs Applied Physics Letters. 63: 536-538. DOI: 10.1063/1.109997  0.325
1993 Harmon ES, Lovejoy ML, Melloch MR, Lundstrom MS, Ritter D, Hamm RA. Minority-carrier mobility enhancement in p+ InGaAs lattice matched to InP Applied Physics Letters. 63: 636-638. DOI: 10.1063/1.109974  0.335
1993 Lundstrom MS. Chapter 4 Minority-Carrier Transport in III-V Semiconductors Semiconductors and Semimetals. 39: 193-258. DOI: 10.1016/S0080-8784(08)62596-X  0.463
1993 Alam MA, Stettler MA, Lundstrom MS. Formulation of the Boltzmann equation in terms of scattering matrices Solid State Electronics. 36: 263-271. DOI: 10.1016/0038-1101(93)90149-K  0.621
1993 Coutts TJ, Lundstrom MS. Research opportunities in crystalline III-V photovoltaics Journal of Electronic Materials. 22: 57-64. DOI: 10.1007/Bf02665724  0.3
1992 Ahrenkiel RK, Keyes BM, MacMillan HF, Lush GB, Melloch MR, Lundstrom MS. Minority-carrier lifetime and photon recycling in n-GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 990-995. DOI: 10.1116/1.577892  0.315
1992 Das A, Lundstrom MS. Scattering Matrix Simulation of Electron Transport in Model Bipolar Devices Ieee Transactions On Electron Devices. 39: 1157-1163. DOI: 10.1109/16.129097  0.464
1992 Lush GB, MacMillan HF, Keyes BM, Levi DH, Melloch MR, Ahrenkiel RK, Lundstrom MS. A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition Journal of Applied Physics. 72: 1436-1442. DOI: 10.1063/1.351704  0.328
1992 Lush GB, Melloch MR, Lundstrom MS, Levi DH, Ahrenkiel RK, MacMillan HF. Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films Applied Physics Letters. 61: 2440-2442. DOI: 10.1063/1.108190  0.308
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Ahrenkiel RK. Minority hole mobility in n+GaAs Applied Physics Letters. 61: 2683-2684. DOI: 10.1063/1.108108  0.354
1992 Dodd P, Lundstrom MS. Minority electron transport in InP/InGaAs heterojunction bipolar transistors Applied Physics Letters. 61: 465-467. DOI: 10.1063/1.107886  0.42
1992 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, De Lyon TJ, Woodall JM. Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon Applied Physics Letters. 61: 822-824. DOI: 10.1063/1.107756  0.362
1992 Stettler MA, Lundstrom MS. Self-consistent scattering matrix calculation of the distribution function in semiconductor devices Applied Physics Letters. 60: 2908-2910. DOI: 10.1063/1.106816  0.413
1992 Lovejoy ML, Melloch MR, Ahrenkiel RK, Lundstrom MS. Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III-V semiconductors Solid State Electronics. 35: 251-259. DOI: 10.1016/0038-1101(92)90229-6  0.334
1991 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK, Klausmeier-Brown ME. Zero-field time-of-flight measurements of electron diffusion in p+-gaas Japanese Journal of Applied Physics. 30: L135-L137. DOI: 10.1143/Jjap.30.L135  0.368
1991 Das A, Lundstrom M. Does velocity overshoot reduce collector delay time in AlGaAs/GaAs HBTs? Ieee Electron Device Letters. 12: 335-337. DOI: 10.1109/55.82079  0.311
1991 Dodd PE, Melloch MR, Lundstrom MS. High-Gain, Low-Leakage Gaas Pseudo-Hbt's for Operation in Reduced Temperature Environments Ieee Electron Device Letters. 12: 629-631. DOI: 10.1109/55.119220  0.378
1991 Dodd PE, Stellwag TB, Melloch MR, Lundstrom MS. Surface and Perimeter Recombination in GaAs Diodes: An Experimental and Theoretical Investigation Ieee Transactions On Electron Devices. 38: 1253-1261. DOI: 10.1109/16.81614  0.387
1991 Patkar MP, Lundstrom MS, Melloch MR. Transistor-based studies of heavy doping effects in n-GaAs Applied Physics Letters. 59: 1853-1854. DOI: 10.1063/1.106416  0.346
1991 Harmon ES, Melloch MR, Lundstrom MS, Lovejoy ML. Experimental determination of the effects of degenerate Fermi statistics on heavily p-doped GaAs Applied Physics Letters. 58: 1647-1649. DOI: 10.1063/1.105152  0.364
1991 Dodd PF, Lovejoy ML, Melloch MR, Lundstrom MS. Cryogenic operation of GaAs bipolar transistors with inverted base doping Electronics Letters. 27: 860-861. DOI: 10.1049/El:19910538  0.341
1991 Lovejoy ML, Melloch MR, Lundstrom MS, Keyes BM, Ahrenkiel RK. Measurement of minority hole zero-field diffusivity in n+-GaAs Institute of Physics Conference Series. 120: 359-363.  0.304
1990 Lovejoy ML, Keyes BM, Klausmeier-Brown ME, Melloch MR, Ahrenkiel RK, Lundstrom MS. Time-of-flight measurements of zero-field electron diffusion in p+-GaAs Conference On Solid State Devices and Materials. 613-616. DOI: 10.7567/Ssdm.1990.D-6-4  0.378
1990 Chuang HL, Carpenter MS, Melloch MR, Lundstrom MS, Yablonovitch E, Gmitter TJ. Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors Applied Physics Letters. 57: 2113-2115. DOI: 10.1063/1.104114  0.306
1990 Stellwag TB, Melloch MR, Lundstrom MS, Carpenter MS, Pierret RF. Orientation-dependent perimeter recombination in GaAs diodes Applied Physics Letters. 56: 1658-1660. DOI: 10.1063/1.103108  0.384
1990 Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Transistor-based measurements of electron injection currents in p-type GaAs doped 1018-1020 cm-3 Applied Physics Letters. 56: 160-162. DOI: 10.1063/1.103037  0.393
1990 Lundstrom MS, Klausmeier-Brown ME, Melloch MR, Ahrenkiel RK, Keyes BM. Device-related material properties of heavily doped gallium arsenide Solid State Electronics. 33: 693-704. DOI: 10.1016/0038-1101(90)90182-E  0.426
1990 Das A, Lundstrom MS. A scattering matrix approach to device simulation Solid State Electronics. 33: 1299-1307. DOI: 10.1016/0038-1101(90)90034-C  0.463
1990 Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Electrical measurements of bandgap shrinkage in heavily doped p-type GaAs Journal of Electronic Materials. 19: 7-11. DOI: 10.1007/Bf02655545  0.365
1990 Das A, Lundstrom MS. Scattering matrix approach to advanced bipolar device simulation Conference On Solid State Devices and Materials. 147-150.  0.308
1989 Klausmeier-Brown ME, Lundstrom MS, Melloch MR. The Effects of Heavy Impurity Doping on Al GaAs/GaAs Bipolar Transistors Ieee Transactions On Electron Devices. 36: 2146-2155. DOI: 10.1109/16.40894  0.423
1989 Demoulin PD, Lundstrom MS. Projections of GaAs Solarcell Performance Limits Based on Two-Dimensional Numerical Simulation Ieee Transactions On Electron Devices. 36: 897-905. DOI: 10.1109/16.299671  0.357
1989 Das A, Lundstrom MS. Consequences of valley filtering on abrupt junction AlGaAs/GaAs heterojunction bipolar transistors Journal of Applied Physics. 66: 2168-2172. DOI: 10.1063/1.344313  0.398
1989 Chuang HL, Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Effective minority-carrier hole confinement of Si-doped, n+-n GaAs homojunction barriers Journal of Applied Physics. 66: 273-277. DOI: 10.1063/1.343868  0.339
1988 DeMoulin PD, Tobin SP, Lundstrom MS, Carpenter MS, Melloch MR. Influence of Perimeter Recombination on High-Efficiency GaAs p/n Heteroface Solar Cells Ieee Electron Device Letters. 9: 368-370. DOI: 10.1109/55.746  0.312
1988 Klausmeier-Brown ME, DeMoulin PD, Lundstrom MS, Melloch MR, Tobin SP. IVA-5 Measurement of Bandgap Narrowing Effects in p-GaAs and Implications for AlGaAs/GaAs HBT Performance Ieee Transactions On Electron Devices. 35: 2445. DOI: 10.1109/16.8870  0.317
1988 Klausmeier-Brown ME, Kyono CS, DeMoulin PD, Tobin SP, Lundstrom MS, Melloch MR. Sequential Etch Analysis of Electron Injection in p+-GaAs Ieee Transactions On Electron Devices. 35: 1159-1161. DOI: 10.1109/16.3384  0.371
1988 Das A, Lundstrom MS. Numerical Study of Emitter-Base Junction Design for AlGaAs/GaAs Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 35: 863-870. DOI: 10.1109/16.3337  0.419
1988 Carpenter MS, Melloch MR, Lundstrom MS, Tobin SP. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes Applied Physics Letters. 52: 2157-2159. DOI: 10.1063/1.99563  0.356
1988 Klausmeier-Brown ME, Lundstrom MS, Melloch MR, Tobin SP. Effects of heavy impurity doping on electron injection in p+-n GaAs diodes Applied Physics Letters. 52: 2255-2257. DOI: 10.1063/1.99529  0.369
1988 Chuang HL, Demoulin PD, Klausmeier-Brown ME, Melloch MR, Lundstrom MS. Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers Journal of Applied Physics. 64: 6361-6364. DOI: 10.1063/1.342102  0.375
1988 Lundstrom MS. Device physics of crystalline solar cells Solar Cells. 24: 91-102. DOI: 10.1016/0379-6787(88)90039-7  0.389
1987 Bandyopadhyay S, Klausmeier-Brown ME, Maziar CM, Datta S, Lundstrom MS. A Rigorous Technique to Couple Monte Carlo and Drift-Diffusion Models for Computationally Efficient Device Simulation Ieee Transactions On Electron Devices. 34: 392-399. DOI: 10.1109/T-Ed.1987.22935  0.39
1987 Cahay M, McLennan M, Datta S, Lundstrom MS. Self-consistent I-V characteristics of ultra-small devices Compel - the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 6: 53-57. DOI: 10.1108/Eb010301  0.402
1987 Cahay M, McLennan M, Datta S, Lundstrom MS. Importance of space-charge effects in resonant tunneling devices Applied Physics Letters. 50: 612-614. DOI: 10.1063/1.98097  0.357
1987 Melloch MR, McMahon CP, Lundstrom MS, Cooper JA, Qian QD, Bandyopadhyay S. Bias-dependent photoresponse of p+in GaAs/AlAs/GaAs diodes Applied Physics Letters. 50: 161-163. DOI: 10.1063/1.97648  0.35
1987 Rancour DP, Melloch MR, Pierret RF, Lundstrom MS, Klausmeier-Brown ME, Kyono CS. Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy Journal of Applied Physics. 62: 1539-1541. DOI: 10.1063/1.339624  0.302
1987 Melloch MR, McMahon CP, Lundstrom MS, Cooper JA, Qian QD. Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodes Solar Cells. 21: 233-240. DOI: 10.1016/0379-6787(87)90123-2  0.336
1987 Demoulin PD, Lundstrom MS, Schwartz RJ. Back-surface field design for n+p GaAs cells Solar Cells. 20: 229-236. DOI: 10.1016/0379-6787(87)90030-5  0.319
1986 Maziar CM, Klausmeier-Brown ME, Bandyopadhyay S, Lundstrom MS, Datta S. Monte Carlo Evaluation of Electron Transport in Heterojunction Bipolar Transistor Base Structures Ieee Transactions On Electron Devices. 33: 881-888. DOI: 10.1109/T-Ed.1986.22590  0.373
1986 Maziar CM, Klausmeier-Brown ME, Lundstrom MS. A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors Ieee Electron Device Letters. 7: 483-485. DOI: 10.1109/Edl.1986.26447  0.327
1986 Tan KL, Lundstrom MS, Melloch MR. Effect of impurity trapping on the capacitance‐voltage characteristics of n‐GaAs/N‐AlGaAs heterojunctions Applied Physics Letters. 48: 428-430. DOI: 10.1063/1.96520  0.315
1986 Datta S, Melloch MR, Bandyopadhyay S, Lundstrom MS. Proposed structure for large quantum interference effects Applied Physics Letters. 48: 487-489. DOI: 10.1063/1.96484  0.344
1986 Bandyopadhyay S, Maziar CM, Datta S, Lundstrom MS. An analytical technique for calculating high-field transport parameters in semiconductors Journal of Applied Physics. 60: 278-284. DOI: 10.1063/1.337641  0.373
1986 Lundstrom MS. An Ebers-Moll model for the heterostructure bipolar transistor Solid State Electronics. 29: 1173-1179. DOI: 10.1016/0038-1101(86)90061-4  0.425
1985 Gray JL, Lundstrom MS. Numerical Solution of Poisson’s Equation with Application to C--V Analysis of III-V Heterojunction Capacitors Ieee Transactions On Electron Devices. 32: 2102-2109. DOI: 10.1109/T-ED.1985.22246  0.55
1985 Gray JL, Lundstrom MS. Numerical Solution of Poisson's Equation with Application to C-V Analysis of III–V Heterojunction Capacitors Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 4: 546-553. DOI: 10.1109/T-Ed.1985.22246  0.542
1985 Schuelke RJ, Maziar CM, Lundstrom MS. Open-circuit voltage enhancement in graded bandgap AlxGa1-xAs solar cells Solar Cells. 15: 73-86. DOI: 10.1016/0379-6787(85)90074-2  0.368
1984 Lundstrom MS. Boundary conditions for pn heterojunctions Solid State Electronics. 27: 491-496. DOI: 10.1016/0038-1101(84)90158-8  0.375
1984 Schuelke RJ, Lundstrom MS. Thermionic emission-diffusion theory of isotype heterojunctions Solid State Electronics. 27: 1111-1116. DOI: 10.1016/0038-1101(84)90051-0  0.347
1983 Lundstrom MS, Schuelke RJ. Numerical Analysis of Heterostructure Semiconductor Devices Ieee Transactions On Electron Devices. 30: 1151-1159. DOI: 10.1109/T-Ed.1983.21271  0.477
1982 Lundstrom MS, Schuelke RJ. Modeling semiconductor heterojunctions in equilibrium Solid State Electronics. 25: 683-691. DOI: 10.1016/0038-1101(82)90195-2  0.439
1981 Lundstrom MS, Schwartz RJ, Gray JL. Transport equations for the analysis of heavily doped semiconductor devices Solid State Electronics. 24: 195-202. DOI: 10.1016/0038-1101(81)90082-4  0.641
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