Year |
Citation |
Score |
2018 |
Makarova OA, Shalaginov MY, Bogdanov S, Kildishev AV, Boltasseva A, Shalaev VM. Patterned multilayer metamaterial for fast and efficient photon collection from dipolar emitters. Optics Letters. 42: 3968-3971. PMID 28957174 DOI: 10.1364/Ol.42.003968 |
0.363 |
|
2018 |
Andersen SKH, Bogdanov S, Makarova O, Xuan Y, Shalaginov MY, Boltasseva A, Bozhevolnyi SI, Shalaev VM. Hybrid Plasmonic Bullseye Antennas for Efficient Photon Collection Acs Photonics. 5: 692-698. DOI: 10.1021/Acsphotonics.7B01194 |
0.302 |
|
2017 |
Makarova OA, Shalaginov MY, Bogdanov S, Guler U, Boltasseva A, Kildishev AV, Shalaev VM. Patterning metamaterials for fast and efficient single-photon sources Proceedings of Spie. 10112: 1011208. DOI: 10.1117/12.2253133 |
0.388 |
|
2016 |
Bogdanov S, Shalaginov MY, Boltasseva A, Shalaev VM. Material platforms for integrated quantum photonics Optical Materials Express. 7: 111. DOI: 10.1364/Ome.7.000111 |
0.426 |
|
2016 |
Shalaev VM, Shalaginov MY, Bogdanov S, Vorobyov VV, Liu J, Akimov AV, Lagutchev AS, Irudayaraj JK, Kildishev AV, Boltasseva A. Towards sensors and quantum registers using color center in diamond and nanophotonic structures(Conference Presentation) Proceedings of Spie. 9918: 991826. DOI: 10.1117/12.2240294 |
0.389 |
|
2016 |
Shalaev VM, Kinsey N, Shaltout AM, Guler U, Kim J, Bogdanov S, Shalaginov MY, Boltasseva A. New material platforms and metasurface designs for nano- and quantum photonics (Conference Presentation) Proceedings of Spie. 9920. DOI: 10.1117/12.2235482 |
0.401 |
|
2015 |
Shalaev VM, Shalaginov MY, Vorobyov VV, Bogdanov S, Akimov AV, Lagutchev A, Kildishev AV, Boltasseva A. Nitrogen-vacancy single-photon emission enhanced with nanophotonic structures (Presentation Recording) Proceedings of Spie. 9544. DOI: 10.1117/12.2190251 |
0.339 |
|
2015 |
Shalaginov M, Bogdanov S, Liu J, Lagutchev A, Kildishev AV, Peroulis D, Irudayaraj JM, Boltasseva A, Shalaev VM. Effect of photonic density of states on spin-flip induced fluorescence contrast in diamond nitrogen-vacancy center ensembles (Presentation Recording) Proceedings of Spie. 9544. DOI: 10.1117/12.2187485 |
0.34 |
|
2014 |
Razeghi M, Haddadi A, Hoang AM, Chen G, Bogdanov S, Darvish SR, Callewaert F, Bijjam PR, McClintock R. Antimonide-based type II superlattices: A superior candidate for the third generation of infrared imaging systems Journal of Electronic Materials. 43: 2802-2807. DOI: 10.1007/S11664-014-3080-Y |
0.77 |
|
2013 |
Chen G, Hoang AM, Bogdanov S, Haddadi A, Darvish SR, Razeghi M. Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array Applied Physics Letters. 103. DOI: 10.1063/1.4833026 |
0.748 |
|
2013 |
Chen G, Hoang AM, Bogdanov S, Haddadi A, Bijjam PR, Nguyen BM, Razeghi M. Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement Applied Physics Letters. 103. DOI: 10.1063/1.4813479 |
0.683 |
|
2013 |
Razeghi M, Haddadi A, Hoang AM, Huang EK, Chen G, Bogdanov S, Darvish SR, Callewaert F, McClintock R. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices Infrared Physics and Technology. 59: 41-52. DOI: 10.1016/J.Infrared.2012.12.008 |
0.792 |
|
2012 |
Chen G, Huang EK, Hoang AM, Bogdanov S, Darvish SR, Razeghi M. Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4767905 |
0.8 |
|
2011 |
Nguyen BM, Chen G, Hoang AM, Abdollahi Pour S, Bogdanov S, Razeghi M. Effect of contact doping in superlattice-based minority carrier unipolar detectors Applied Physics Letters. 99. DOI: 10.1063/1.3613927 |
0.742 |
|
2011 |
Bogdanov S, Nguyen BM, Hoang AM, Razeghi M. Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes Applied Physics Letters. 98. DOI: 10.1063/1.3584853 |
0.653 |
|
2010 |
Nguyen BM, Abdollahi Pour S, Bogdanov S, Razeghi M. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.855635 |
0.757 |
|
2010 |
Razeghi M, Nguyen BM, Delaunay PY, Abdollahi Pour S, Huang EKW, Manukar P, Bogdanov S, Chen G. High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.840422 |
0.733 |
|
2009 |
Razeghi M, Nguyen BM, Delaunay PY, Huang EKW, Abdollahi Pour S, Manukar P, Bogdanov S. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.828421 |
0.745 |
|
2009 |
Nguyen BM, Bogdanov S, Pour SA, Razeghi M. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection Applied Physics Letters. 95. DOI: 10.1063/1.3258489 |
0.634 |
|
2009 |
Pour SA, Nguyen BM, Bogdanov S, Huang EK, Razeghi M. Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate Applied Physics Letters. 95. DOI: 10.1063/1.3254719 |
0.794 |
|
2009 |
Nguyen BM, Hoffman D, Huang EKW, Bogdanov S, Delaunay PY, Razeghi M, Tidrow MZ. Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate Applied Physics Letters. 94. DOI: 10.1063/1.3148326 |
0.792 |
|
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